NPN DIGITAL T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC144T █ APPLICATIONS Switching Circuit，Interface Circuit． █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg ——Storage Temperature………………………… -55~150℃ TO-92S T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………300mW VCBO ——Collector-Base Voltage………………………………50V 1―Emitter，E 2―Collector,C 3―Base，B VCEO ——Collector-Emitter Voltage……………………………50V VE B O ——Emitter -Base Voltage……………………………… 10V IC——Collector Current………………………………………100mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit BVCBO Collector-Base Breakdown Voltage ５０ Ｖ BVCEO Collector-Emitter Breakdown Voltage ５０ Ｖ BVEBO Emitter-Base Breakdown Voltage ５ Ｖ Test Conditions IC=10μA, IE=0 IC=0.1mA, IB=0 ICBO Collector Cut-off Current ０．１ μA IE=50μA，IC=0 VCB=40V, IE=0 IEBO Emitter Cut-off Current ０．１ μA VEB=5V, IC=0 HFE DC Current Gain VCE(sat) １００ ２５０ ６００ ０．１ ０．３ Ｖ IC=5mA, IB=0.5mA ０．４ ０．５５ ０．８ Ｖ VCE=5V, IC=0.1mA ０．８ ２．０ ４．０ Ｖ VCE=0.2V, IC=5mA ３３ ４７ ６１ Ｋｏｈｍ Collector- Emitter Saturation Voltage ＶＩ（ｏｆｆ） Input Off Voltage ＶＩ（ｏｎ） Input On Voltage VCE=5V, IC=1mA R1 Input Resistor fT Current Gain-Bandwidth Product ２５０ ＭＨｚ Output Capacitance ５．５ ｐＦ Cob VCE=10V,IC=5mA VCB=10V,f=1ＭＨｚ