ON MPSA12 Darlington transistors npn silicon Datasheet

MPSA12
Darlington Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
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COLLECTOR 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCES
20
Vdc
Emitter Base Voltage
VEBO
10
Vdc
PD
625
5.0
mW
mW/°C
TJ, Tstg
−55 to +150
°C
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
BASE
2
EMITTER 1
MARKING
DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
2
RS
3
MPSA12 = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
in
en
TO−92
CASE 29−11
STYLE 1
1
MPS
A12
AYWW G
G
IDEAL
TRANSISTOR
ORDERING INFORMATION
Device
MPSA12
MPSA12G
Figure 1. Transistor Noise Model
MPSA12RLRA
MPSA12RLRAG
MPSA12RLRP
MPSA12RLRPG
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 1
1
Package
Shipping †
TO−92
5,000 Units/Box
TO−92
(Pb−Free)
5,000 Units/Box
TO−92
2,000/Tape & Reel
TO−92
(Pb−Free)
2,000/Tape & Reel
TO−92
2,000/Tape & Reel
TO−92
(Pb−Free)
2,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MPSA12/D
MPSA12
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)CES
20
−
Vdc
Collector Cutoff Current
(VCB= 15 Vdc, IE = 0)
ICBO
−
100
nAdc
Emitter Cutoff Current
(VEB= 12 Vdc, IC = 0)
IEBO
−
100
nAdc
20,000
−
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 100 mAdc, IB = 0)
ON CHARACTERISTICS
hFE
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.01 mAdc)
VCE(sat)
−
1.0
Vdc
Base −Emitter On Voltage
(IC = 10 mAdc, VCE = 5.0 Vdc)
VBE(on)
−
1.4
Vdc
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
1.0
0.7
0.5
0.3
D = 0.5
0.2
0.2
0.1
0.05
SINGLE PULSE
0.1
0.07
0.05
SINGLE PULSE
0.03
ZqJC(t) = r(t) • RqJCTJ(pk) − TC = P(pk) ZqJC(t)
ZqJA(t) = r(t) • RqJATJ(pk) − TA = P(pk) ZqJA(t)
0.02
0.01
0.1
−
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
Figure 2. Thermal Response
http://onsemi.com
2
200
500
1.0k
2.0k
5.0k 10k
MPSA12
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−− 0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
N
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MPSA12/D
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