MBR735 THRU MBR7100 7.5 AMPS. Schottky Barrier Rectifiers Voltage Range 35 to 100 Volts Current 7.5 Amperes TO-220A Features .185(4.70) .175(4.44) Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guardring for overvoltage protection High temperature soldering guaranteed: 260oC/10 seconds,0.25”(6.35mm)from case .412(10.5) MAX .113(2.87) .103(2.62) .27(6.86) .23(5.84) .594(15.1) .587(14.9) PIN1 2 .16(4.06) .14(3.56) .11(2.79) .10(2.54) .56(14.22) .53(13.46) Mechanical Data .055(1.40) .045(1.14) DIA .154(3.91) .148(3.74) .037(0.94) .027(0.68) Cases: JEDEC TO-220A molded plastic body Terminals: Lead solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 5 in. - lbs. max Weight: 0.08 ounce, 2.24 grams .025(0.64) .014(0.35) .205(5.20) .195(4.95) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol MBR MBR Type Number 735 745 Maximum Recurrent Peak Reverse Voltage VRRM 35 45 Maximum RMS Voltage 24 31 VRMS Maximum DC Blocking Voltage 35 45 VDC Maximum Average Forward Rectified Current I(AV) See Fig. 1 Peak Repetitive Forward Current (Square Wave, 20KHz) at Tc=105oC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Peak Repetitive Reverse Surge Current (Note 1) Maximum Instantaneous Forward Voltage at (Note 2) IF=7.5A,Tc=25℃ IF=7.5A,Tc=125℃ IF=15A,Tc=25℃ IF=15A,Tc=125℃ Maximum Instantaneous Reverse Current @ Tc =25℃ at Rated DC Blocking Voltage (Note 1) @ Tc=125℃ IFRM IFSM MBR 760 MBR 790 MBR 7100 Units 50 60 90 100 V 35 42 63 70 V 50 60 90 100 A 15.0 A 150 A 1.0 VF – 0.57 0.84 0.72 0.75 0.65 – – 0.92 0.82 – – IR 0.1 15.0 0.5 50 0.1 Dv/dt Typical Junction Capactance Operating Junction Temperature Range Cj RθJC RθJA TJ Storage Temperature Range TSTG 0.5 A – 10,000 360 Notes: 1. 2.0us Pulse Width, f=1.0 KHz 2. Pulse Test: 300us Pulse Width, 1% Duty Cycle 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plated. - 108 - V 7.5 IRRM Voltage Rate of Change (Rated VR) Maximum Thermal Resistance, (Note 3) MBR 750 280 5.0 15.0 V mA mA V/uS 200 pF ℃/W -65 to +150 ℃ -65 to +175 ℃ RATINGS AND CHARACTERISTIC CURVES (MBR735 THRU MBR7100) FIG.1- FORWARD CURRENT DERATING CURVE FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 10 175 PEAK FORWARD SURGE CURRENT. (A) AVERAGE FORWARD CURRENT. (A) RESISTIVE OR INDUCTIVE LOAD 8 6 4 2 MBR735-MBR745 MBR750-MBR7100 0 Tj=Tj max. 8.3ms Single Half Sine Wave JEDEC Method 150 125 100 75 50 25 0 50 100 150 1 10 o CASE TEMPERATURE. ( C) 100 NUMBER OF CYCLES AT 60Hz FIG.4- TYPICAL REVERSE CHARACTERISTICS FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 50 40 Tj=125 0C 10 10 INSTANTANEOUS REVERSE CURRENT. (mA) INSTANTANEOUS FORWARD CURRENT. (A) MBR735-MBR745 MBR750-MBR7100 Pulse Width=300 s 1% Duty Cycle 1 Tj=25 0C 0.1 MBR735-MBR745 MBR750-MBR760 MBR790-MBR7100 Tj=125 0C 1 0.1 Tj=75 0C 0.01 Tj=25 0C 0.001 0.01 0 0.1 0.2 0.3 0.4 0.5 0 0.6 0.7 0.8 0.9 1.0 1.1 1.2 FIG.5- TYPICAL JUNCTION CAPACITANCE 40 60 80 100 120 140 FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS 4,000 100 TRANSIENT THERMAL IMPEDANCE. ( OC/W) JUNCTION CAPACITANCE.(pF) 20 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FORWARD VOLTAGE. (V) Tj=25 0C f=1.0MHz Vsig=50mVp-p 1,000 100 MBR735-MBR745 MBR750 & MBR760 MBR790-MBR7100 40 0.1 1.0 10 100 REVERSE VOLTAGE. (V) 10 1 0.1 0.01 0.1 1 T, PULSE DURATION. (sec) - 109 - 10 100