ON MJ11021 Darlington power transistors complementary silicon Datasheet

 Order this document
by MJ11017/D
SEMICONDUCTOR TECHNICAL DATA
" ! . . . designed for use as general purpose amplifiers, low frequency switching and
motor control applications.
• High dc Current Gain @ 10 Adc — hFE = 400 Min (All Types)
• Collector–Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) – MJ11018, 17
VCEO(sus) = 250 Vdc (Min) – MJ11022, 21
• Low Collector–Emitter Saturation
VCE(sat) = 1.0 V (Typ) @ IC = 5.0 A
VCE(sat) = 1.8 V (Typ) @ IC = 10 A
• Monolithic Construction
• 100% SOA Tested @ VCE = 44 V, IC = 4.0 A, t = 250 ms.
*Motorola Preferred Device
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MAXIMUM RATINGS
Symbol
MJ11018
MJ11017
MJ11022
MJ11021
Unit
VCEO
150
250
Vdc
Collector–Base Voltage
VCB
150
250
Vdc
Emitter–Base Voltage
VEB
50
Vdc
IC
15
30
Adc
Rating
Collector–Emitter Voltage
Collector Current —
Continuous Peak
Base Current
IB
0.5
Adc
Total Device Dissipation @ TC = 25_C
Derate Above 25_C
PD
175
1.16
Watts
W/_C
TJ, Tstg
– 65 to + 175
– 65 to + 200
_C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
RθJC
0.86
_C/W
Thermal Resistance, Junction to Case
PD, POWER DISSIPATION (WATTS)
(1) Pulse Test: Pulse Width 5.0 ms, Duty Cycle
30 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 – 120 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
10%.
200
150
100
50
0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
175
200
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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v
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
150
250
—
—
—
—
1.0
1.0
—
—
0.5
5.0
—
2.0
400
100
15,000
—
—
—
2.0
3.4
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 0. 1 Adc, IB = 0)
VCEO(sus)
Vdc
MJ11017, MJ11018
MJ11021, MJ11022
Collector Cutoff Current
(VCE = 75, IB = 0)
(VCE = 125, IB = 0)
Collector Cutoff Current
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C)
ICEO
mAdc
MJ11017, MJ11018
MJ11021, MJ11022
ICEV
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
mAdc
IEBO
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 10 Adc, VCE = 5.0 Vdc)
(IC = 15 Adc, VCE = 5.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 100 mA)
(IC = 15 Adc, IB = 150 mA)
hFE
—
VCE(sat)
Vdc
Base–Emitter On Voltage
IC = 10 A, VCE = 5.0 Vdc)
VBE(on)
—
2.8
Vdc
Base–Emitter Saturation Voltage
(IC = 15 Adc, IB = 150 mA)
VBE(sat)
—
3.8
Vdc
[hfe]
3.0
—
Mhz
—
—
400
600
75
—
—
PNP
Unit
DYNAMIC CHARACTERISTICS
Current–Gain Bandwidth Product
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
pF
MJ11018, MJ11022
MJ11017, MJ11021
Small–Signal Current Gain
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
hfe
SWITCHING CHARACTERISTICS
Typical
Characteristic
Symbol
NPN
td
tr
150
75
ns
1.2
0.5
µs
ts
tf
4.4
2.7
µs
10.0
2.5
µs
Delay Time
Rise Time
Storage Time
(VCC = 100 V, IC = 10 A, IB = 100 mA
VBE(off) = 50 V) (See Figure 2.)
Fall Time
(1) Pulsed Test: Pulse Width = 300 µs, Duty Cycle
2%.
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
V2
APPROX
+12 V
VCC
100 V
RC
SCOPE
TUT
RB
51
D1
0
V1
APPROX
– 8.0 V
≈ 10 K
≈ 8.0
+ 4.0 V
25 µs
for td and tr, D1 is disconnected
and V2 = 0
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
For NPN test circuit reverse diode and voltage polarities.
Figure 2. Switching Times Test Circuit
2
Motorola Bipolar Power Transistor Device Data
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
RθJC(t) = r(t) RθJC
RθJC(t) = 0.86°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
0.05
0.02
0.01
0.03
SINGLE PULSE
0.02
0.01
0.01
0.02
0.03 0.05
0.2
1.0
0.3 0.5
1.0
2.0
3.0 5.0
t, TIME (ms)
10
20
30
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200 300
500
1000
Figure 3. Thermal Response
IC, COLLECTOR CURRENT (AMPS)
FORWARD BIAS
5.0 ms
1.0 ms
0.5 ms
30
20
0.1 ms
10
dc
5.0
3.0
2.0
TJ = 175°C
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITATION @ TC = 25°C
SINGLE PULSE
MJ11017, 18
MJ11021, 22
1.0
0.5
0.3
0.2
0
3.0
5.0 7.0
10
20
30 50
70
There are two limitations on the power handling ability of a
transistor average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 4 is based on T J(pk) = 175_C, TC is
variable dependIng on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
175_C. T J(pk) may be calculated from the data in Figure 3.
At high case temperatures thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
v
100 150 200
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 4. Maximum Rated Forward Bias Safe
Operating Area (FBSOA)
REVERSE BIAS
IC, COLLECTOR CURRENT (AMPS)
30
20
L = 200 µH
IC/IB1 ≥ 50
TC = 25°C
VBE(off) 0 – 5.0 V
RBE = 47 Ω
DUTY CYLE = 10%
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be hold to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current conditions during reverse biased turn–off. This rating is verified under clamped
conditions so that the device is never subjected to an avalanche mode. Figure 5 gives ROSOA characteristics.
10
MJ11017, 18
MJ11021, 22
0
0 20
60
100
140
180
220
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
260
Figure 5. Maximum RBSOA, Reverse Bias Safe
Operating Area
Motorola Bipolar Power Transistor Device Data
3
PNP
NPN
30,000
20,000
VCE = 5.0 Vdc
TJ = 150°C
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
10,000
7000
5000
3000
2000
TJ = 25°C
1000
700
500
TJ = – 55°C
300
10,000
7000
5000
TJ = 25°C
3000
2000
TJ = – 55°C
1000
700
500
200
100
0.2
VCE = 5.0 Vdc
TJ = 150°C
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
IC, COLLECTOR CURRENT (A)
300
0.2 0.3
15 20
10
0.5 0.7 1.0
2.0 3.0
5.0 7.0
IC, COLLECTOR CURRENT (A)
10
15 20
Figure 6. DC Current Gain
NPN
IC = 15 A
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
PNP
4.0
TJ = 25°C
3.5
IC = 10 A
3.0
IC = 5.0 A
2.5
2.0
1.5
1.0
0.5
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
IB, BASE CURRENT (mA)
4.0
IC = 15 A
3.5
TJ = 25°C
IC = 10 A
3.0
IC = 5.0 A
2.5
2.0
1.5
1.0
0.5
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
IB, BASE CURRENT (mA)
Figure 7. Collector Saturation Region
PNP
NPN
4.0
3.5
4.0
3.5
TJ = 25°C
VOLTAGE (VOLTS)
VOLTAGE (VOLTS)
TJ = 25°C
3.0
2.5
2.0
1.5
1.0
0.5
0.1
VBE(sat) @ IC/IB = 100
VBE @ VCE = 5.0 V
2.0 3.0 5.0 7.0 10
2.5
2.0
1.5
VBE(sat) @ IC/IB = 100
1.0
VCE(sat) @ IC/IB = 100
0.2 0.3 0.5 0.7 1.0
3.0
20 30
50
70
VBE @ VCE = 5.0 V
0.5
0.1
0.2 0.3 0.5 0.7 1.0
COLLECTOR CURRENT (AMPS)
VCE(sat) @ IC/IB = 100
2.0 3.0 5.0 7.0 10
20 30
50
COLLECTOR CURRENT (AMPS)
Figure 8. “On” Voltages
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
C
–T–
E
D
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
M
–Y–
L
V
SEATING
PLANE
2
H
G
B
M
T Y
1
–Q–
0.13 (0.005)
M
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.550 REF
–––
1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
–––
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
–––
26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
–––
21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
Motorola Bipolar Power Transistor Device Data
5
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6
◊
Motorola Bipolar Power Transistor Device Data
*MJ11017/D*
MJ11017/D
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