LRC LBC856AWT1G General purpose transistors pnp silicon Datasheet

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
LBC856AWT1G, BWT1G
LBC857AWT1G, BWT1G
LBC858AWT1G, BWT1G
CWT1G
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT–323/
SC–70 which is designed for low power surface mount
applications.
Features
We declare that the material of product compliance with
RoHS requirements.
3
MAXIMUM RATINGS
Rating
Symbol
BC856
BC857
BC858
Unit
Collector–Emitter Voltage
V CEO
–65
–45
–30
V
Collector–Base Voltage
V CBO
–80
–50
–30
V
Emitter–Base Voltage
V
–5.0
–5.0
–5.0
V
–100
–100
–100
mAdc
Collector Current — Continuous
EBO
IC
1
2
SOT– 323 / SC-70
3
COLLECTOR
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
PD
150
mW
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R θJA
T J , T stg
833
–55 to +150
1
BASE
2
EMITTER
°C/W
°C
DEVICE MARKING
LBC856AWT1G= 3A; LBC856BWT1G= 3B; LBC857AWT1G= 3E; LBC857BWT1G = 3F;
LBC858AWT1G= 3J; LBC858BWT1G= 3K; LBC858CWT1G= 3L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
– 65
– 45
– 30
– 80
– 50
– 30
– 80
– 50
– 30
– 5.0
– 5.0
– 5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
– 15
– 4.0
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA)
LBC856 Series
Collector–Emitter Breakdown Voltage
(IC = –10 µA, VEB = 0)
LBC856 Series
LBC857 Series
LBC858 Series
Collector–Base Breakdown Voltage
(IC = – 10 µA)
LBC856 Series
Emitter–Base Breakdown Voltage
(IE = – 1.0 µA)
LBC856 Series
LBC857 Series
LBC858 Series
LBC857 Series
LBC858 Series
LBC857 Series
LBC858 Series
Collector Cutoff Current (VCB = – 30 V)
(VCB = – 30 V, TA = 150°C)
V
(BR)CEO
V (BR)CES
V
(BR)CBO
V
(BR)EBO
I CBO
v
v
v
v
nA
µA
1.FR–5=1.0 x 0.75 x 0.062in
1/6
LESHAN RADIO COMPANY, LTD.
LBC856AWT1G, BWT1G
LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G, CWT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
h FE
—
—
—
125
220
420
—
—
—
—
– 0.6
—
90
150
270
180
290
520
—
—
– 0.7
– 0.9
—
—
—
—
—
250
475
800
– 0.3
– 0.65
—
—
– 0.75
– 0.82
—
fT
100
—
—
MHz
Cob
—
—
4.5
pF
NF
––
––
10
dB
ON CHARACTERISTICS
DC Current Gain
(I C = –10 µA, V CE = –5.0 V)
LBC856A, LBC857A, LBC858A
(I C = –2.0 mA, V CE = –5.0 V)
LBC856A, LBC857A, LBC858A
LBC856B,LBC857B, LBC858B
LBC858C,
LBC856B,LBC857B, LBC858B
LBC858C,
Collector–Emitter Saturation Voltage (I C = –10 mA, I B = – 0.5 mA)
Collector–Emitter Saturation Voltage (I C = –100 mA, I B = – 5.0 mA)
Base–Emitter Saturation Voltage (I C = –10 mA, I B = –0.5 mA)
Base–Emitter Saturation Voltage (I C = –100 mA, I B = –5.0 mA)
Base–Emitter Voltage (I C = –2.0 mA, V CE = –5.0 V)
Base–Emitter Voltage (I C = –10 mA, V CE = –5.0 V)
V
CE(sat)
V
BE(sat)
V
BE(on)
V
V
V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = – 10 mA, V CE = – 5.0 Vdc, f = 100 MHz)
Output Capacitance (V CB = – 10 V, f = 1.0 MHz)
Noise Figure
(I C= – 0.2 mA,V CE= – 5.0 Vdc, R S= 2.0 kΩ, f =1.0 kHz, BW= 200 Hz)
ORDERING INFORMATION ( Pb– Free )
Device
Package
Shipping
LBC856AWT1G_S
SOT-23
3000/Tape & Reel
LBC856AWT3G_S
SOT-23
10000/Tape & Reel
2/6
LESHAN RADIO COMPANY, LTD.
LBC856AWT1G, BWT1G
LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G, CWT1G
LBC857/LBC858
–1.0
VCE= –10 V
T A = 25°C
1.5
T A = 25°C
–0.9
V BE(sat) @ I C /I B=10
–0.8
V, VOLTAGE (VOLTS)
hFE, NORMALIZED DC CURRENT GAIN
2.0
1.0
0.7
0.5
–0.7
V BE(on) @ V CE = –10 V
–0.6
–0.5
–0.4
–0.3
–0.2
0.3
V CE(sat) @ I C /I B = 10
–0.1
0
0.2
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
–200
–0.1
T A = 25°C
–1.6
–1.2
I C= –50 mA
IC=
I C= –200 mA
–10 mA
I C= –100 mA
I C= –20 mA
–0.4
–2.0
–5.0
–10
–20
–50
–100
1.0
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0
–0.02
–0.1
–1.0
–10
–20
–0.2
–10
–100
I B , BASE CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
400
300
ib
T A=25°C
5.0
C ob
3.0
2.0
1.0
–0.6
–1.0
–2.0
–4.0
–6.0
–10
–20 –30 –40
fT, CURRENT– GAIN – BANDWIDTH
PRODUCT (MHz)
C
7.0
–0.4
–1.0
Figure 3. Collector Saturation Region
10.0
C, CAPACITANCE(pF)
–1.0
I C , COLLECTOR CURRENT (mAdc)
–2.0
–0.8
–0.5
Figure 2. “Saturation” and “On” Voltages
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
VCE, COLLECTOR– EMITTER VOLTAGE (V)
I C , COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
–0.2
200
V CE = –10V
T A = 25°C
150
100
80
60
40
30
20
–0.5
–1.0
–2.0
–3.0
–5.0
–10
–20
–30
–50
V R , REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
3/6
LESHAN RADIO COMPANY, LTD.
LBC856AWT1G, BWT1G
LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G, CWT1G
–1.0
T J= 25°C
V CE = –5.0V
–0.8
V, VOLTAGE (VOLTS)
T A = 25°C
2.0
1.0
0.5
VBE(sat) @ I C/I B=10
–0.6
–0.2
0.2
VCE(sat) @ I C /I B= 10
0
–0.1–0.2
–1.0 –2.0 –5.0 –10 –20 –50 –100–200
–0.2
–10 –20
–50 –100 –200
I C , COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
–1.6
–20mA
IC =
–50mA
–100mA –200mA
–10mA
–0.8
–0.4
TJ= 25°C
0
–0.02
–5.0
Figure 7. DC Current Gain
–2.0
–1.2
–0.5 –1.0 –2.0
I C , COLLECTOR CURRENT (mA)
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0
–5.0
–10 –20
I B , BASE CURRENT (mA)
–1.0
–1.4
–1.8
T J= 25°C
20
C ib
–55°C to 125°C
–2.6
–3.0
–0.2
–0.5 –1.0 –2.0
–5.0
–10 –20
–50 –100 –200
I C , COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
fT, CURRENT– GAIN – BANDWIDTH PRODUCT T
40
θ VB for V BE
–2.2
Figure 9. Collector Saturation Region
C, CAPACITANCE (pF)
VBE @VCE= –5.0 V
–0.4
θVB , TEMPERATURE COEFFICIENT (mV/°C)
V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
LBC856
500
VCE= –5.0V
200
10
100
6.0
C ob
4.0
2.0
–0.1 –0.2 –0.5
–1.0 –2.0
–5.0
–10 –20
–50 –100
50
20
–1.0
–10
–100
V R , REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
4/6
LESHAN RADIO COMPANY, LTD.
r( t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
LBC856AWT1G, BWT1G
1.0
0.7
0.5
LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G, CWT1G
D=0.5
0.2
0.3
0.2
0.1
0.05
SINGLE PULSE
0.1
SINGLE PULSE
0.07
0.05
Z θJC (t) = r(t) R θJC
R θJC = 83.3°C/W MAX
Z θJA (t) = r(t) R θJA
R θJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
T J(pk) – T C = P (pk) R θJC (t)
P(pk)
t1
t2
0.03
0.02
DUTY CYCLE, D = t 1 /t 2
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0k 2.0k
5.0k
t, TIME (ms)
Figure 13. Thermal Response
–200
1s
3 ms
I C , COLLECTOR CURRENT (mA)
–100
TJ= 25°C
TA= 25°C
–50
BC558
BC557
–10
BC556
–5.0
BONDING WIRE LIMIT
THERMAL LIMIT
The safe operating area curves indicate I C –V CE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon T J(pk) = 150°C; T C or T A
is variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided T J(pk) < 150°C. T J(pk) may be calculated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by the secondary breakdown.
SECOND BREAKDOWN LIMIT
–2.0
–1.0
–0.5
–10
–30 –45 –65 –100
V CE , COLLECTOR–EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
5/6
10k
LESHAN RADIO COMPANY, LTD.
LBC856AWT1G, BWT1G
LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G, CWT1G
SC-70 / SOT-323
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
DIM
L
A
B
C
D
G
H
J
K
L
N
S
3
B
S
1
2
D
G
C
0.05 (0.002)
J
N
PIN 1. BASE
2. EMITTER
3. COLLECTOR
K
H
INCHES MILLIMETERS
MIN
MA X
MIN
MA X
0.071 0.087
1.80
2.20
0.045 0.053
1.15
1.35
0.032 0.040
0.80
1.00
0.012 0.016
0.30
0.40
0.047 0.055
1.20
1.40
0.000 0.004
0.00
0.10
0.004 0.010
0.10
0.25
0.017 REF
0.425 REF
0.026 BSC
0.650 BSC
0.028 REF
0.700 REF
0.079 0.095
2.00
2.40
0.025
0.65
0.025
0.65
0.075
1.9
0.035
0.9
0.028
0.7
inches
mm
6/6
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