STMicroelectronics BDX54C Complementary power darlington transistor Datasheet

BDX53B - BDX53C
BDX54B - BDX54C
Complementary power Darlington transistors
Features
■
Good hFE linearity
■
High fT frequency
■
Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
Application
3
1
■
Audio amplifiers
■
Linear and switching industrial equipment
2
TO-220
Description
The devices are manufactured in planar base
island technology with monolithic Darlington
configuration.
Table 1.
Figure 1.
Internal schematic diagram
R1 typ.= 10 kΩ
R2 typ.= 150 Ω
Package
Packaging
TO-220
Tube
Device summary
Order code
Marking
BDX53B
BDX53B
BDX53C
BDX53C
BDX54B
BDX54B
BDX54C
BDX54C
October 2007
Rev 4
1/7
www.st.com
7
Electrical ratings
1
BDX53B - BDX53C - BDX54B - BDX54C
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
BDX53B
BDX53C
PNP
BDX54B
BDX54C
Unit
Collector-base voltage (IE = 0)
80
100
V
VCEO
Collector-emitter voltage (IB = 0)
80
100
V
VEBO
Emitter-base voltage (IC = 0)
5
V
Collector current
8
A
Collector peak current (repetitive)
12
A
Base current
0.2
mA
PTOT
Total dissipation at Tc = 25°C
60
W
Tstg
Storage temperature
-65 to 150
°C
150
°C
ICM
IB
TJ
2/7
NPN
VCBO
IC
Note:
Parameter
Max. operating junction temperature
For PNP types voltage and current values are negative.
BDX53B - BDX53C - BDX54B - BDX54C
2
Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
Electrical characteristics
Symbol
Parameter
VCEO(sus)(1)
Collector-emitter
sustaining voltage (IB = 0)
Test conditions
IC = 100 mA
for BDX53B - BDX54B
for BDX53C - BDX54C
Min.
Typ.
80
100
ICBO
for BDX53B - BDX54B
VCB = 100 V
for BDX53C - BDX54C
VCE = 40 V
ICEO
Collector cut-off current
(IB = 0)
for BDX53B - BDX54B
VCE = 50 V
for BDX53C - BDX54C
IEBO
Emitter cut-off current
(IC = 0)
Unit
V
V
VCB = 80 V
Collector cut-off current
(IE = 0)
Max.
VEB = 5 V
0.2
mA
0.2
mA
0.5
mA
0.5
mA
2
mA
VCE(sat)(1)
Collector-emitter saturation
IC = 3 A;
voltage
IB = 12 mA
2
V
VBE(sat)(1)
Base-emitter saturation
voltage
IC = 3 A;
IB = 12 mA
2.5
V
hFE(1)
DC current gain
IC = 3 A;
VCE = 3 V
VF(1)
Diode forward voltage
2.5
V
V
IF = 3 A;
IF = 8 A;
750
1.8
2.5
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Note:
For PNP types voltage and current values are negative.
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Package mechanical data
3
BDX53B - BDX53C - BDX54B - BDX54C
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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BDX53B - BDX53C - BDX54B - BDX54C
Package mechanical data
TO-220 mechanical data
mm
inch
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Typ
4.40
0.61
1.14
0.49
15.25
Max
Min
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
Max
0.181
0.034
0.066
0.027
0.62
0.050
16.40
28.90
3.75
2.65
Typ
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.645
1.137
3.85
2.95
0.147
0.104
0.151
0.116
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Revision history
4
BDX53B - BDX53C - BDX54B - BDX54C
Revision history
Table 4.
6/7
Document revision history
Date
Revision
09-Sep-2004
3
23-Oct-2007
4
Changes
Technology change from epibase to planar (PCN APMPWR/07/2417 and APM-PWR/07/2615)
BDX53B - BDX53C - BDX54B - BDX54C
Revision history
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