2N5306 2N5306 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * TA=25°C unless otherwise noted Symbol VCEO Parameter Collector-Emitter Voltage Value 25 Units V VCBO VEBO Collector-Base Voltage 25 V Emitter-Base Voltage 12 IC Collector Current V 1.2 A TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 °C - Continuous * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25°C unless otherwise noted Symbol Off Characteristics Parameter Test Condition Min. Typ. Max. Units V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 25 V V(BR)CBO Collector-Base Breakdown Voltage IC = 0.1µA, IE = 0 25 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 0.1µA, IC = 0 12 ICBO Collector Cutoff Current VCB = 25V, IE = 0 VCB = 25V, IE = 0, Ta = 100°C 0.1 20 µA µA IEBO Emitter Cutoff Current VEB = 12V, IC = 0 0.1 µA V On Characteristics * hFE DC Current Gain VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 100mA 7,000 20,000 70,000 VCE(sat) Collector-Emitter Saturation Voltage IC = 200mA, IB = 0.2mA 1.4 VBE(sat) Base-Emitter Saturatin Voltage IC = 200mA, IB = 0.2mA 1.6 V V VBE(on) Base-Emitter On Voltage IC = 200mA, VCE = 5.0V 1.5 V 10 pF Small Signal Characteristics Ccb Collector-Base Capacitance VCB = 10V, f = 1.0MHz hfe Small-Signal Current Gain IC = 2.0mA, VCE = 5.0V, f = 1.0KHz IC = 2.0mA, VCE = 5.0V, f = 10MHz 7000 6.0 * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% ©2002 Fairchild Semiconductor Corporation Rev. B1, July 2002 Symbol PD Total Device Dissipation Derate above 25°C Parameter Max. 625 5.0 Units mW mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 °C/W ©2002 Fairchild Semiconductor Corporation Rev. B1, July 2002 2N5306 Thermal Characteristics TA=25°C unless otherwise noted 2N5306 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, July 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless CoolFET CROSSVOLT DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series FASTâ FASTr FRFET GlobalOptoisolator GTO HiSeC I2C Across the board. Around the world. The Power Franchise ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrenchâ MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERâ OPTOLOGICâ SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFETâ VCX DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I