IPU80R900P7 MOSFET 800VCoolMOSªP7PowerTransistor IPAK Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V superjunctiontechnologiesandcombinesbest-in-classperformancewith stateoftheartease-of-use,resultingfromInfineon’sover18years pioneeringsuperjunctiontechnologyinnovation. tab Features •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classDPAKRDS(on) •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Fullyqualifiedacc.JEDECforIndustrialApplications •Fullyoptimizedportfolio 1 2 3 Drain Pin 2, Tab Benefits Gate Pin 1 •Best-in-classperformance •Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts •Easytodriveandtoparallel •BetterproductionyieldbyreducingESDrelatedfailures •Lessproductionissuesandreducedfieldreturns •Easytoselectrightpartsforfinetuningofdesigns Source Pin 3 Potentialapplications RecommendedforhardandsoftswitchingflybacktopologiesforLED Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand Industrialpower.AlsosuitableforPFCstageinConsumerapplications andSolar. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C 800 V RDS(on),max 0.90 Ω Qg,typ 15 nC ID 6 A Eoss @ 500V 1.4 µJ VGS(th),typ 3 V ESD class (HBM) 2 - Type/OrderingCode Package IPU80R900P7 PG-TO 251-3 Final Data Sheet Marking 80R900P7 1 RelatedLinks see Appendix A Rev.2.1,2018-02-09 800VCoolMOSªP7PowerTransistor IPU80R900P7 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.1,2018-02-09 800VCoolMOSªP7PowerTransistor IPU80R900P7 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 6 3.9 A TC=25°C TC=100°C - 14 A TC=25°C - - 13 mJ ID=0.9A; VDD=50V EAR - - 0.11 mJ ID=0.9A; VDD=50V Avalanche current, repetitive IAR - - 0.9 A - MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0to400V Gate source voltage VGS -20 -30 - 20 30 V static; AC (f>1 Hz) Power dissipation Ptot - - 45 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C - Continuous diode forward current IS - - 4.4 A TC=25°C IS,pulse - - 14 A TC=25°C dv/dt - - 1 V/ns VDS=0to400V,ISD<=1.1A,Tj=25°C dif/dt - - 50 A/µs VDS=0to400V,ISD<=1.1A,Tj=25°C Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive 2) Diode pulse current 3) Reverse diode dv/dt 3) Maximum diode commutation speed 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 2.8 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Thermal resistance, junction - ambient RthJA for SMD version - - - °C/W n.a. Soldering temperature, wavesoldering only allowed at leads - - 260 °C Tsold 1.6 mm (0.063 in.) from case for 10s 1) Limited by Tj max. Maximum duty cycle D=0.5 Pulse width tp limited by Tj,max 3) VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG;tcond<2µs 2) Final Data Sheet 3 Rev.2.1,2018-02-09 800VCoolMOSªP7PowerTransistor IPU80R900P7 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 3.5 V VDS=VGS,ID=0.11mA - 10 1 - µA VDS=800V,VGS=0V,Tj=25°C VDS=800V,VGS=0V,Tj=150°C - - 1 µA VGS=20V,VDS=0V Min. Typ. Max. V(BR)DSS 800 - Gate threshold voltage VGS(th) 2.5 Zero gate voltage drain current IDSS Gate-source leakage curent incl. zener IGSS diode Drain-source on-state resistance RDS(on) - 0.77 1.99 0.90 - Ω VGS=10V,ID=2.2A,Tj=25°C VGS=10V,ID=2.2A,Tj=150°C Gate resistance RG - 1.4 - Ω f=250kHz,opendrain Unit Note/TestCondition Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 350 - pF VGS=0V,VDS=500V,f=250kHz Output capacitance Coss - 6 - pF VGS=0V,VDS=500V,f=250kHz Effective output capacitance, energy related1) Co(er) - 11 - pF VGS=0V,VDS=0to500V Effective output capacitance, time related2) Co(tr) - 135 - pF ID=constant,VGS=0V,VDS=0to500V Turn-on delay time td(on) - 12 - ns VDD=400V,VGS=13V,ID=2.2A, RG=15Ω Rise time tr - 8 - ns VDD=400V,VGS=13V,ID=2.2A, RG=15Ω Turn-off delay time td(off) - 40 - ns VDD=400V,VGS=13V,ID=2.2A, RG=15Ω Fall time tf - 20 - ns VDD=400V,VGS=13V,ID=2.2A, RG=15Ω Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 2 - nC VDD=640V,ID=2.2A,VGS=0to10V Gate to drain charge Qgd - 6 - nC VDD=640V,ID=2.2A,VGS=0to10V Gate charge total Qg - 15 - nC VDD=640V,ID=2.2A,VGS=0to10V Gate plateau voltage Vplateau - 4.5 - V VDD=640V,ID=2.2A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to500V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to500V 2) Final Data Sheet 4 Rev.2.1,2018-02-09 800VCoolMOSªP7PowerTransistor IPU80R900P7 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=2.2A,Tf=25°C 610 - ns VR=400V,IF=1.1A,diF/dt=50A/µs - 5 - µC VR=400V,IF=1.1A,diF/dt=50A/µs - 11 - A VR=400V,IF=1.1A,diF/dt=50A/µs Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 5 Rev.2.1,2018-02-09 800VCoolMOSªP7PowerTransistor IPU80R900P7 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 50 45 10 µs 100 µs 101 40 1 µs 1 ms 10 ms 35 DC 100 ID[A] Ptot[W] 30 25 10-1 20 15 10-2 10 5 0 0 25 50 75 100 125 10-3 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 100 µs 1 ms 101 10 µs 1 µs 10 ms DC 0.5 ID[A] ZthJC[K/W] 100 10-1 100 0.2 0.1 0.05 0.02 0.01 single pulse 10-2 10-3 100 101 102 103 10-1 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 6 Rev.2.1,2018-02-09 800VCoolMOSªP7PowerTransistor IPU80R900P7 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 18 12 20 V 10 V 20 V 10 V 8V 7V 16 8V 7V 10 14 6V 6V 12 8 10 ID[A] ID[A] 5.5 V 5.5 V 8 6 6 5V 4 4.5 V 2 5V 4.5 V 4 2 0 0 5 10 15 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 2.4 5V 4.0 5.5 V 2.2 2.0 3.5 1.8 6V 6.5 V 1.6 7V RDS(on)[Ω] RDS(on)[Ω] 3.0 10 V 2.5 98% 1.4 1.2 typ 1.0 2.0 0.8 0.6 1.5 0.4 1.0 0 5 10 15 0.2 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=2.2A;VGS=10V 7 Rev.2.1,2018-02-09 800VCoolMOSªP7PowerTransistor IPU80R900P7 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 16 10 25 °C 9 14 8 12 7 8 150 °C 640 V 120 V 6 VGS[V] ID[A] 10 5 4 6 3 4 2 2 0 1 0 2 4 6 8 10 0 12 0 5 VGS[V] 10 15 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=2.2Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 14 25 °C 125 °C 12 10 IF[A] EAS[mJ] 101 8 6 100 4 2 10-1 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 VSD[V] 100 125 150 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=0.9A;VDD=50V 8 Rev.2.1,2018-02-09 800VCoolMOSªP7PowerTransistor IPU80R900P7 Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 950 104 900 103 Ciss 102 C[pF] VBR(DSS)[V] 850 800 101 750 100 Coss Crss 700 -75 -50 -25 0 25 50 75 100 125 150 175 10-1 0 100 200 Tj[°C] 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz Diagram15:Typ.Cossstoredenergy 3.0 2.5 Eoss[µJ] 2.0 1.5 1.0 0.5 0.0 0 100 200 300 400 500 600 700 800 VDS[V] Eoss=f(VDS) Final Data Sheet 9 Rev.2.1,2018-02-09 800VCoolMOSªP7PowerTransistor IPU80R900P7 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform Rg1 VDS Rg 2 IF Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 10 ID VDS Rev.2.1,2018-02-09 800VCoolMOSªP7PowerTransistor IPU80R900P7 6PackageOutlines c j m m DOCUMENT NO. Z8B0003330 DIM A A1 b b2 b4 c c2 D D1 E E1 e e1 N L L1 L2 MILLIMETERS MIN 2.16 0.90 0.64 0.65 4.95 0.46 0.46 5.97 5.04 6.35 4.70 INCHES MAX 2.41 1.14 0.89 1.15 5.50 0.60 0.89 6.22 5.77 6.73 5.21 MIN 0.085 0.035 0.025 0.026 0.195 0.018 0.018 0.235 0.198 0.250 0.185 2.29 4.57 3 8.89 1.90 0.89 MAX 0.095 0.045 0.035 0.045 0.217 0.024 0.035 0.245 0.227 0.265 0.205 0.090 0.180 3 9.65 2.29 1.37 0.350 0.075 0.035 SCALE 0 2.0 0 2.0 4mm EUROPEAN PROJECTION ISSUE DATE 01-04-2016 0.380 0.090 0.054 REVISION 04 Figure1OutlinePG-TO251-3,dimensionsinmm/inches Final Data Sheet 11 Rev.2.1,2018-02-09 800VCoolMOSªP7PowerTransistor IPU80R900P7 7AppendixA Table11RelatedLinks • IFXCoolMOSWebpage:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 12 Rev.2.1,2018-02-09 800VCoolMOSªP7PowerTransistor IPU80R900P7 RevisionHistory IPU80R900P7 Revision:2018-02-09,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2017-03-21 Release of final version 2.1 2018-02-09 Corrected front page text TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.1,2018-02-09