MOTOROLA MC14060

SEMICONDUCTOR TECHNICAL DATA
L SUFFIX
CERAMIC
CASE 620
The MC14060B is a 14–stage binary ripple counter with an on–chip
oscillator buffer. The oscillator configuration allows design of either RC or
crystal oscillator circuits. Also included on the chip is a reset function which
places all outputs into the zero state and disables the oscillator. A negative
transition on Clock will advance the counter to the next state. Schmitt trigger
action on the input line permits very slow input rise and fall times.
Applications include time delay circuits, counter controls, and frequency
dividing circuits.
P SUFFIX
PLASTIC
CASE 648
•
•
•
•
D SUFFIX
SOIC
CASE 751B
Fully static operation
Diode Protection on All Inputs
Supply Voltage Range = 3.0 V to 18 V
Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range
• Buffered Outputs Available from Stages 4 Through 10 and
12 Through 14
• Common Reset Line
• Pin–for–Pin Replacement for CD4060B
ORDERING INFORMATION
MC14XXXBCP
MC14XXXBCL
MC14XXXBD
TA = – 55° to 125°C for all packages.
TRUTH TABLE
Clock
Reset
Output State
X
L
L
H
No Change
Advance to next state
All Outputs are low
Plastic
Ceramic
SOIC
PIN ASSIGNMENT
Q12
1
16
VDD
Q13
2
15
Q10
Q14
3
14
Q8
Q6
4
13
Q9
Q5
5
12
RESET
Q7
6
11
CLOCK
Q4
7
10
OUT 1
VSS
8
9
OUT 2
X = Don’t Care
LOGIC DIAGRAM
OUT 2
9
Q4
OUT 1
Q5
7
10
Q12
1
5
Q13
2
Q14
3
CLOCK
11
C
C
R
Q
C
Q
C
R
Q
C
Q
C
R
Q
C
Q
C
R
Q
C
Q
C
R
Q
C
Q
C
Q
R
Q
RESET
12
Q6 = PIN 4
Q7 = PIN 6
Q8 = PIN 14
Q9 = PIN 13
Q10 = PIN 15
VDD = PIN 16
VSS = PIN 8
REV 3
1/94
MOTOROLA
Motorola, Inc. 1995
CMOS LOGIC DATA
MC14060B
1
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MAXIMUM RATINGS* (Voltages Referenced to VSS)
Symbol
VDD
Parameter
DC Supply Voltage
Value
Unit
– 0.5 to + 18.0
V
Vin, Vout
Input or Output Voltage (DC or Transient)
– 0.5 to VDD + 0.5
V
Iin, Iout
Input or Output Current (DC or Transient),
per Pin
± 10
mA
PD
Power Dissipation, per Package†
500
mW
Tstg
Storage Temperature
– 65 to + 150
_C
260
_C
TL
Lead Temperature (8–Second Soldering)
This device contains protection circuitry to
guard against damage due to high static
voltages or electric fields. However, precautions must be taken to avoid applications of
any voltage higher than maximum rated voltages to this high–impedance circuit. For proper
operation, Vin and Vout should be constrained
to the range VSS
(Vin or Vout)
VDD.
Unused inputs must always be tied to an
appropriate logic voltage level (e.g., either VSS
or VDD). Unused outputs must be left open.
* Maximum Ratings are those values beyond which damage to the device may occur.
†Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C
Ceramic “L” Packages – 12 mW/_C From 100_C To 125_C
ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS)
Characteristic
Symbol
VDD
Vdc
– 55_C
Min
Max
Min
25_C
Typ #
Max
125_C
Min
Max
Unit
Output Voltage
Vin = VDD or 0
“0” Level
VOL
5.0
10
15
—
—
—
0.05
0.05
0.05
—
—
—
0
0
0
0.05
0.05
0.05
—
—
—
0.05
0.05
0.05
V
Vin = 0 or VDD
“1” Level
VOH
5.0
10
15
4.95
9.95
14.95
—
—
—
4.95
9.95
14.95
5.0
10
15
—
—
—
4.95
9.95
14.95
—
—
—
V
Input Voltage
(VO = 4.5 or 0.5 V)
(VO = 9.0 or 1.0 V)
(VO = 13.5 or 1.5 V)
“0” Level
VIL
5.0
10
15
—
—
—
1.5
3.0
4.0
—
—
—
2.25
4.50
6.75
1.5
3.0
4.0
—
—
—
1.5
3.0
4.0
(VO = 0.5 or 4.5 V)
(VO = 1.0 or 9.0 V)
(VO = 1.5 or 13.5 V)
“1” Level
VIH
5.0
10
15
3.5
7.0
11.0
—
—
—
3.5
7.0
11.0
2.75
5.50
8.25
—
—
—
3.5
7.0
11.0
—
—
—
Input Voltage
“0” Level
(VO = 4.5 Vdc)
(For Input 11
(VO = 9.0 Vdc) and Output 10)
(VO = 13.5 Vdc)
VIL
5.0
10
15
—
—
—
1.0
2.0
2.5
—
—
—
2.25
4.50
6.75
1.0
2.0
2.5
—
—
—
1.0
2.0
2.5
5.0
10
15
4.0
8.0
12.5
—
—
—
4.0
8.0
12.5
2.75
5.50
8.25
—
—
—
4.0
8.0
12.5
—
—
—
5.0
5.0
10
15
– 3.0
– 0.64
– 1.6
– 4.2
—
—
—
—
– 2.4
– 0.51
– 1.3
– 3.4
– 4.2
– 0.88
– 2.25
– 8.8
—
—
—
—
– 1.7
– 0.36
– 0.9
– 2.4
—
—
—
—
IOL
5.0
10
15
0.64
1.6
4.2
—
—
—
0.51
1.3
3.4
0.88
2.25
8.8
—
—
—
0.36
0.9
2.4
—
—
—
mA
Input Current
Iin
15
—
± 0.1
—
± 0.00001
± 0.1
—
± 1.0
µA
Input Capacitance (Vin = 0)
Cin
—
—
—
—
5.0
7.5
—
—
pF
Quiescent Current
(Per Package)
IDD
5.0
10
15
—
—
—
5.0
10
20
—
—
—
0.005
0.010
0.015
5.0
10
20
—
—
—
150
300
600
µA
IT
5.0
10
15
(VO = 0.5 Vdc)
(VO = 1.0 Vdc)
(VO = 1.5 Vdc)
“1” Level
VIH
Output Drive Current
(VOH = 2.5 V)
(Except Source
(VOH = 4.6 V)
Pins 9 and 10)
(VOH = 9.5 V)
(VOH = 13.5 V)
IOH
(VOL = 0.4 V)
(VOL = 0.5 V)
(VOL = 1.5 V)
Total Supply Current**†
(Dynamic plus Quiescent,
Per Package)
(CL = 50 pF on all outputs,
all buffers switching)
Sink
V
V
Vdc
Vdc
mA
IT = (0.25 µA/kHz) f + IDD
IT = (0.54 µA/kHz) f + IDD
IT = (0.85 µA/kHz) f + IDD
µA
# Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
** The formulas given are for the typical characteristics only at 25_C.
MC14060B
2
MOTOROLA CMOS LOGIC DATA
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SWITCHING CHARACTERISTICS (CL = 50 pF, TA = 25_C)
Characteristic
Symbol
VDD
Vdc
Min
Typ #
Max
Unit
Output Rise Time (Counter Outputs)
tTLH
5.0
10
15
—
—
—
40
25
20
200
100
80
ns
Output Fall Time (Counter Outputs)
tTHL
5.0
10
15
—
—
—
50
30
20
200
100
80
ns
Propagation Delay Time
Clock to Q4
tPLH
tPHL
5.0
10
15
—
—
—
415
175
125
740
300
200
ns
5.0
10
15
—
—
—
1.5
0.7
0.4
2.7
1.3
1.0
µs
twH
5.0
10
15
100
40
30
65
30
20
—
—
—
ns
fφ
5.0
10
15
—
—
—
5
14
17
3.5
8
12
MHz
tTLH
tTHL
5.0
10
15
tw
5.0
10
15
120
60
40
40
15
10
—
—
5.0
10
15
—
—
—
170
80
60
350
160
100
Clock to Q14
Clock Pulse Width
Clock Pulse Frequency
Clock Rise and Fall Time
Reset Pulse Width
Propagation Delay Time
Reset to On
tPHL
ns
No Limit
ns
—
ns
#Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
VDD
VDD
500 µF
PULSE
GENERATOR
CLOCK
NC
NC
CLOCK
NC
NC
Q4
OUT1 Q5
OUT2 Qn
R
VSS
20 ns
CLOCK
PULSE
GENERATOR
0.01 µF
ID
90%
50%
10%
CL
VSS
CL
CL
CL
20 ns
CL
CL
20 ns
90%
50%
10%
CLOCK
20 ns
tPLH
VDD
VSS
50% DUTY CYCLE
Figure 1. Power Dissipation Test Circuit
and Waveform
MOTOROLA CMOS LOGIC DATA
Q4
OUT1 Q5
OUT2
Qn
R
Q
tTLH
tWH
tPHL
90%
50%
10%
tTHL
Figure 2. Switching Time Test Circuit
and Waveforms
MC14060B
3
CLOCK 11
f
10 OUT 1
RESET
if 1 kHz ≤ f ≤ 100 kHz
and 2Rtc < RS < 10Rtc
(f in Hz, R in ohms, C in farads)
9 OUT 2
Rtc
RS
[ 2.3 R1tcCtc
The formula may vary for other frequencies. Recommended
maximum value for the resistors in 1 MΩ.
Ctc
Figure 3. Oscillator Circuit Using RC Configuration
TYPICAL RC OSCILLATOR CHARACTERISTICS
100
VDD = 15 V
4.0
f, OSCILLATOR FREQUENCY (kHz)
FREQUENCY DEVIATION (%)
8.0
0
1.0 V
– 4.0
– 8.0
5.0 V
– 12
RTC = 56 kΩ
C = 1000 pF
– 16
– 55
– 25
100
CLOCK
11
5
2
1
0.5
f AS A FUNCTION
OF C
(RTC = 56 kΩ)
(RS = 120 k)
125
0.1
1.0 k
10 k
100 k
RTC, RESISTANCE (OHMS)
0.001
0.01
C, CAPACITANCE (µF)
10 OUT 1
9 OUT 2
18M
RO
CT
Figure 6. Typical Crystal Oscillator Circuit
1.0 M
0.1
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Figure 5. RC Oscillator Frequency as a
Function of RTC and C
500 kHz
Circuit
32 kHz
Circuit
Unit
Crystal Characteristics
Resonant Frequency
Equivalent Resistance, RS
500
1.0
32
6.2
kHz
kΩ
External Resistor/Capacitor Values
RO
CT
CS
47
82
20
750
82
20
kΩ
pF
pF
+ 6.0
+ 2.0
+ 2.0
+ 2.0
ppm
ppm
+ 100
+ 120
ppm
– 160
– 560
ppm
Characteristic
RESET
CS
10
0.0001
Figure 4. RC Oscillator Stability
f AS A FUNCTION
OF RTC
(C = 1000 pF)
(RS ≈ 2RTC)
20
0.2
RS = 0, f = 10.15 kHz @ VDD = 10, TA = 25°C
RS = 120 kΩ, f = 7.8 kHz @ VDD = 10 V, TA = 25°C
0
25
50
75
TA, AMBIENT TEMPERATURE (°C)
VDD = 10 V
50
Frequency Stability
Frequency Changes as a Function
of VDD (TA = 25_C)
VDD Change from 5.0 V to 10V
VDD Change from 10 V to 15 V
Frequency Change as a Function
of Temperature (VDD = 10 V)
TA Change from – 55_C to
+ 25_C Complete Oscillator*
TA Change from + 25_C to
+ 125_C Complete Oscillator*
* Complete oscillator includes crystal, capacitors, and resistors.
Figure 7. Typical Data for Crystal Oscillatgor Circuit
MC14060B
4
MOTOROLA CMOS LOGIC DATA
OUTLINE DIMENSIONS
L SUFFIX
CERAMIC DIP PACKAGE
CASE 620–10
ISSUE V
–A–
16
9
1
8
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4. DIMENSION F MAY NARROW TO 0.76 (0.030)
WHERE THE LEAD ENTERS THE CERAMIC
BODY.
–B–
C
L
DIM
A
B
C
D
E
F
G
H
K
L
M
N
–T–
K
N
SEATING
PLANE
M
E
F
J
G
D
16 PL
0.25 (0.010)
16 PL
0.25 (0.010)
M
T A
T B
M
S
INCHES
MIN
MAX
0.750
0.785
0.240
0.295
–––
0.200
0.015
0.020
0.050 BSC
0.055
0.065
0.100 BSC
0.008
0.015
0.125
0.170
0.300 BSC
0_
15 _
0.020
0.040
MILLIMETERS
MIN
MAX
19.05
19.93
6.10
7.49
–––
5.08
0.39
0.50
1.27 BSC
1.40
1.65
2.54 BSC
0.21
0.38
3.18
4.31
7.62 BSC
0_
15 _
0.51
1.01
S
P SUFFIX
PLASTIC DIP PACKAGE
CASE 648–08
ISSUE R
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
–A–
16
9
1
8
B
F
C
L
S
–T–
SEATING
PLANE
K
H
G
D
J
16 PL
0.25 (0.010)
MOTOROLA CMOS LOGIC DATA
M
T A
M
M
DIM
A
B
C
D
F
G
H
J
K
L
M
S
INCHES
MIN
MAX
0.740
0.770
0.250
0.270
0.145
0.175
0.015
0.021
0.040
0.70
0.100 BSC
0.050 BSC
0.008
0.015
0.110
0.130
0.295
0.305
0_
10 _
0.020
0.040
MILLIMETERS
MIN
MAX
18.80
19.55
6.35
6.85
3.69
4.44
0.39
0.53
1.02
1.77
2.54 BSC
1.27 BSC
0.21
0.38
2.80
3.30
7.50
7.74
0_
10 _
0.51
1.01
MC14060B
5
OUTLINE DIMENSIONS
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751B–05
ISSUE J
–A–
16
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
9
–B–
1
P
8 PL
0.25 (0.010)
8
M
B
S
G
R
K
F
X 45 _
C
–T–
SEATING
PLANE
M
D
16 PL
0.25 (0.010)
M
T B
S
A
S
J
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80
10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386
0.393
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0_
7_
0.229
0.244
0.010
0.019
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MC14060B
6
◊
*MC14060B/D*
MOTOROLA CMOS LOGIC
DATA
MC14060B/D