SAVANTIC BDX77 Silicon npn power transistor Datasheet

SavantIC Semiconductor
Product Specification
BDX77
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·Low saturation voltage
·Complement to type BDX78
·Wide area of safe operation
APPLICATIONS
·For medium power switching and
amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
80
V
VEBO
Emitter -base voltage
Open collector
5
V
IC
Collector current (DC)
8
A
ICM
Collector current-Peak
12
A
IB
Base current
3
A
PT
Total power dissipation
60
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
MAX
UNIT
2.08
/W
SavantIC Semiconductor
Product Specification
BDX77
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=0.2A ;IB=0
80
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ; IE=0
100
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
5
V
VCEsat-1
Collector-emitter saturation voltage
IC=3A; IB=0.3A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=6A; IB=0.6A
1.5
V
Base-emitter saturation voltage
IC=6A; IB=0.6A
2.0
V
ICEO
Collector cut-off current
VCE=30V ;IB=0;
0.2
mA
ICBO
Collector cut-off current
VCB=40V ;IE=0;Tj=150
1.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.5
mA
hFE
DC current gain
IC=1A ; VCE=2V
30
Transition frequency
IC=0.3A ; VCE=3V
7.0
Base-emitter on voltage
IC=3A;VCE=2V
VBEsat
fT
VBE
CONDITIONS
MIN
TYP.
MAX
UNIT
MHz
1.5
V
1.0
µs
4.0
µs
Switching times
ton
Turn-on time
toff
Turn-off time
IC=2A
IB1=-IB2=0.2A;
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
BDX77
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