Fairchild FPN430 Pnp low saturation transistor Datasheet

FPN430 / FPN430A
FPN430
FPN430A
C
TO-226
B
E
PNP Low Saturation Transistor
These devices are designed for high current gain and low
saturation voltage with collector currents up to 2.0 A continuous.
Sourced from Process PB.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
30
V
VCBO
Collector-Base Voltage
35
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current
TJ, Tstg
Operating and Storage Junction Temperature Range
- Continuous
2.0
A
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
TA = 25°C unless otherwise noted
Characteristic
Max
Units
FPN430 / FPN430A
1.0
W
Thermal Resistance, Junction to Case
50
°C/W
Thermal Resistance, Junction to Ambient
125
°C/W
PD
Total Device Dissipation
RθJC
RθJA
 1999 Fairchild Semiconductor Corporation
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
BVCEO
IC = 10 mA, IB = 0
BVCBO
Collector-Emitter Breakdown
Voltage
Collector-Base Breakdown Voltage
30
V
BVEBO
Emitter-Base Breakdown Voltage
IC = 100 µA, IE = 0
35
V
IE = 100 µA, IC = 0
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 100°C
VEB = 4.0 V, IC = 0
5.0
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
V
100
10
100
nA
µA
nA
mV
mV
mV
V
V
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 100 mA, VCE = 2.0 V
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 1.0 A, VCE = 2.0 V
IC = 2.0 A, VCE = 2.0 V
IC = 1.0 A, IB = 100 mA
VBE(sat)
Base-Emitter Saturation Voltage
IC = 2.0 A, IB = 200 mA
IC = 1.0 A, IB = 100 mA
500
450
800
1.25
VBE(on)
Base-Emitter Saturation Voltage
IC = 1.0 A, VCE = 2.0 V
1.0
430
430A
100
250
60
40
430
430A
SMALL SIGNAL CHARACTERISTICS
Cobo
Output Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
FT
Transition Frequency
IC = 100 mA, VCE = 5.0 V,
f = 100 MHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
25
100
pF
MHz
FPN430 / FPN430A
PNP Low Saturation Transistor
(continued)
1.6
β = 10
1.4
1.2
1
- 40 °C
0.8
0.6
25 °C
125 °C
0.4
0.2
0.001
0.01
0.1
1
I C - COLLECTOR CURRENT (A)
10
V BEON- BASE-EMITTER ON VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter On Voltage vs
Collector Current
1.6
Vce = 2.0V
1.4
1.2
1
- 40 °C
0.8
0.6
25 °C
0.4
125 °C
0.2
0.0001
Collector-Emitter Saturation
Voltage vs Collector Current
10
120
1.2
β = 10
f V=ce1.0MHz
= 2.0V
- 40°C
100
1
125°C
0.8
0.6
25°C
0.4
C ibo
80
60
Cobo
40
20
0.2
0
0.01
0.1
1
I C - COLLECTOR CURRENT (A)
0
0.1
10
PD - POWE R DIS SIPATION (W)
Vce = 2.0V
500
400
125°C
300
25°C
200
100
0
0.0001
- 40°C
50
100
1
TO-226
0.75
0.5
0.25
0
0.001
0.01
0.1
1
I C - COLLECTOR CURRENT (A)
0.5 1
10 20
V CE - COLLECTOR VOLTAGE (V)
Power Dissipation vs
Ambient Temperature
Current Gain vs Collector Current
600
H FE - CURRENT GAIN
0.001
0.01
0.1
1
I C - COLLECTOR CURRENT (A)
Input/Output Capacitance vs
Reverse Bias Voltage
CAPACITANCE (pf)
VCESAT - COLLECTOR-EMITTER VOLTAGE (V)
VBESAT -BASE-EMITTER SATURATION VOLTAGE(V)
Typical Characteristics
10
0
25
50
75
100
TEMPE RATURE (°C)
125
150
FPN430 / FPN430A
PNP Low Saturation Transistor
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Definition of Terms
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Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
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The datasheet is printed for reference information only.
Rev. G
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