MC10EP58, MC100EP58 3.3V / 5V ECL 2:1 Multiplexer Description The MC10/100EP58 is a 2:1 multiplexer. The device is pin and functionally equivalent to the EL58 and LVEL58 devices. The 100 Series contains temperature compensation. www.onsemi.com Features ♦ 1 1 SOIC−8 NB D SUFFIX CASE 751−07 VCC = 3.0 V to 5.5 V with VEE = 0 V • NECL Mode Operating Range: • • • 8 8 • 310 ps Typical Propagation Delay • Maximum Frequency > 3 GHz Typical • PECL Mode Operating Range: VCC = 0 V with VEE = −3.0 V to −5.5 V Open Input Default State Q Output Will Default LOW with Inputs Open or at VEE These Devices are Pb-Free, Halogen Free and are RoHS Compliant TSSOP−8 DT SUFFIX CASE 948R−02 ♦ MARKING DIAGRAMS* 8 8 1 HEP58 ALYW G 1 8 8 1 H K 5U 3P M HP58 ALYWG G KEP58 ALYW G 1 = MC10 = MC100 = MC10 = MC100 = Date Code A L Y W G KP58 ALYWG G = Assembly Location = Wafer Lot = Year = Work Week = Pb-Free Package (Note: Microdot may be in either location) *For additional marking information, refer to Application Note AND8002/D. ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. © Semiconductor Components Industries, LLC, 2016 August, 2016 − Rev. 8 1 Publication Order Number: MC10EP58/D MC10EP58, MC100EP58 Table 1. PIN DESCRIPTION NC Da 1 2 8 7 1 VCC Q MUX Db 3 6 0 Q PIN FUNCTION Da*, Db* ECL Data Inputs SEL* ECL Select Inputs Q, Q ECL Data Outputs VCC Positive Supply VEE Negative Supply NC No Connect * Pins will default LOW when left open. SEL 4 5 VEE Table 2. TRUTH TABLE Figure 1. 8-Lead Pinout (Top View) and Logic Diagram SEL Data H L a b Table 3. ATTRIBUTES Characteristics Value Internal Input Pulldown Resistor 75 kW Internal Input Pullup Resistor N/A ESD Protection Human Body Model Machine Model Charged Device Model > 4 kV > 200 V > 2 kV Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1) SOIC−8 NB TSSOP−8 Pb-Free Pkg Level 1 Level 3 Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in Transistor Count 41 Devices Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test 1. For additional information, see Application Note AND8003/D. www.onsemi.com 2 MC10EP58, MC100EP58 Table 4. MAXIMUM RATINGS Symbol Rating Unit VCC PECL Mode Power Supply Parameter VEE = 0 V Condition 1 Condition 2 6 V VEE NECL Mode Power Supply VCC = 0 V −6 V VI PECL Mode Input Voltage NECL Mode Input Voltage VEE = 0 V VCC = 0 V 6 −6 V Iout Output Current Continuous Surge 50 100 mA IBB VBB Sink/Source ± 0.5 mA TA Operating Temperature Range −40 to +85 °C Tstg Storage Temperature Range −65 to +150 °C qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm 500 lfpm SOIC−8 NB 190 130 °C/W qJC Thermal Resistance (Junction-to-Case) Standard Board SOIC−8 NB 41 to 44 °C/W qJA Thermal Resistance (Junction-to-Ambient) 0 lfpm 500 lfpm TSSOP−8 185 140 °C/W qJC Thermal Resistance (Junction-to-Case) Standard Board TSSOP−8 41 to 44 °C/W Tsol Wave Solder (Pb-Free) <2 to 3 sec @ 260°C 265 °C VI ≤ VCC VI ≥ VEE Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. JEDEC standard multilayer board − 2S2P (2 signal, 2 power) Table 5. 10EP DC CHARACTERISTICS, PECL (VCC = 3.3 V, VEE = 0 V (Note 1)) −40°C Symbol Characteristic Min Typ 25°C Max Min Typ 85°C Max Min Typ Max Unit IEE Power Supply Current 20 28 37 20 30 39 22 31 40 mA VOH Output HIGH Voltage (Note 2) 2165 2290 2415 2230 2355 2480 2290 2415 2540 mV VOL Output LOW Voltage (Note 2) 1365 1490 1615 1430 1555 1680 1490 1615 1740 mV VIH Input HIGH Voltage (Single-Ended) 2090 2415 2155 2480 2215 2540 mV VIL Input LOW Voltage (Single-Ended) 1365 1690 1460 1755 1490 1815 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 0.5 150 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to −2.2 V. 2. All loading with 50 W to VCC − 2.0 V. www.onsemi.com 3 MC10EP58, MC100EP58 Table 6. 10EP DC CHARACTERISTICS, PECL (VCC = 5.0 V, VEE = 0 V (Note 1)) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 20 28 37 20 30 39 22 31 40 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) 3865 3990 4115 3930 4055 4180 3990 4115 4240 mV VOL Output LOW Voltage (Note 2) 3065 3190 3315 3130 3255 3380 3190 3315 3440 mV VIH Input HIGH Voltage (Single-Ended) 3790 4115 3855 4180 3915 4240 mV VIL Input LOW Voltage (Single-Ended) 3065 3390 3130 3455 3190 3515 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 150 0.5 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to −0.5 V. 2. All loading with 50 W to VCC − 2.0 V. Table 7. 10EP DC CHARACTERISTICS, NECL (VCC = 0 V, VEE = −5.5 V to −3.0 V (Note 1)) −40°C Symbol IEE Characteristic Power Supply Current 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 20 28 37 20 30 39 22 31 40 mA VOH Output HIGH Voltage (Note 2) −1135 −1010 −885 −1070 −945 −820 −1010 −885 −760 mV VOL Output LOW Voltage (Note 2) −1935 −1810 −1685 −1870 −1745 −1620 −1810 −1685 −1560 mV VIH Input HIGH Voltage (Single-Ended) −1210 −885 −1145 −820 −1085 −760 mV VIL Input LOW Voltage (Single-Ended) −1935 −1610 −1870 −1545 −1810 −1485 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 0.5 150 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. Input and output parameters vary 1:1 with VCC. 2. All loading with 50 W to VCC − 2.0 V. www.onsemi.com 4 MC10EP58, MC100EP58 Table 8. 100EP DC CHARACTERISTICS, PECL (VCC = 3.3 V, VEE = 0 V (Note 1)) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 20 28 37 20 31 39 25 33 42 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) 2155 2280 2405 2155 2280 2405 2155 2280 2405 mV VOL Output LOW Voltage (Note 2) 1355 1480 1605 1355 1480 1605 1355 1480 1605 mV VIH Input HIGH Voltage (Single-Ended) 2075 2420 2075 2420 2075 2420 mV VIL Input LOW Voltage (Single-Ended) 1355 1675 1355 1675 1355 1675 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 0.5 150 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to −2.2 V. 2. All loading with 50 W to VCC − 2.0 V. Table 9. 100EP DC CHARACTERISTICS, PECL (VCC = 5.0 V, VEE = 0 V (Note 1)) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 20 28 37 20 31 39 25 33 42 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) 3855 3980 4105 3855 3980 4105 3855 3980 4105 mV VOL Output LOW Voltage (Note 2) 3055 3180 3305 3055 3180 3305 3055 3180 3305 mV VIH Input HIGH Voltage (Single-Ended) 3775 4120 3775 4120 3775 4120 mV VIL Input LOW Voltage (Single-Ended) 3055 3375 3055 3375 3055 3375 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 0.5 150 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to −0.5 V. 2. All loading with 50 W to VCC − 2.0 V. www.onsemi.com 5 MC10EP58, MC100EP58 Table 10. 100EP DC CHARACTERISTICS, NECL (VCC = 0 V, VEE = −5.5 V to −3.0 V (Note 1)) −40°C Symbol Characteristic 25°C 85°C Min Typ Max Min Typ Max Min Typ Max Unit 20 28 37 20 31 39 25 33 42 mA IEE Power Supply Current VOH Output HIGH Voltage (Note 2) −1145 −1020 −895 −1145 −1020 −895 −1145 −1020 −895 mV VOL Output LOW Voltage (Note 2) −1945 −1820 −1695 −1945 −1820 −1695 −1945 −1820 −1695 mV VIH Input HIGH Voltage (Single-Ended) −1225 −880 −1225 −880 −1225 −880 mV VIL Input LOW Voltage (Single-Ended) −1945 −1625 −1945 −1625 −1945 −1625 mV IIH Input HIGH Current 150 mA IIL Input LOW Current 150 0.5 150 0.5 0.5 mA NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. Input and output parameters vary 1:1 with VCC. 2. All loading with 50 W to VCC − 2.0 V. Table 11. AC CHARACTERISTICS (VCC = 0 V; VEE = −3.0 V to −5.5 V or VCC = 3.0 V to 5.5 V; VEE = 0 V (Note 1)) −40°C Symbol Characteristic fmax Maximum Frequency (See Figure 2. Fmax/JITTER) tPLH, tPHL Propagation Delay to Output Differential D to Q,Q SEL to Q,Q tJITTER VPP tr tf Min Typ 25°C Max Min >3 200 Cycle-to-Cycle Jitter (See Figure 2. Fmax/JITTER) Typ 85°C Max Min >3 280 380 0.2 <2 210 Typ Max >3 310 410 0.2 <2 220 Unit GHz 340 420 ps 0.2 <2 ps Input Voltage Swing (Differential Configuration) 150 800 1200 150 800 1200 150 800 1200 mV Output Rise/Fall Times Q, Q (20% − 80%) 70 120 170 80 130 180 100 150 200 ps NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 1. Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to VCC − 2.0 V. www.onsemi.com 6 1000 10 900 9 800 8 700 7 600 6 500 5 400 4 ÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉ ÉÉ ÉÉ 300 3 200 2 100 0 (JITTER) 0 1000 2000 3000 JITTEROUT ps (RMS) VOUTpp (mV) MC10EP58, MC100EP58 1 4000 5000 6000 FREQUENCY (MHz) Figure 2. Fmax/Jitter Q Zo = 50 W D Receiver Device Driver Device Q D Zo = 50 W 50 W 50 W VTT VTT = VCC − 2.0 V Figure 3. Typical Termination for Output Driver and Device Evaluation (See Application Note AND8020/D − Termination of ECL Logic Devices.) www.onsemi.com 7 MC10EP58, MC100EP58 ORDERING INFORMATION Package Shipping† MC10EP58DG SOIC−8 NB (Pb-Free) 98 Units / Rail MC10EP58DR2G SOIC−8 NB (Pb-Free) 2500 / Tape & Reel MC10EP58DTG TSSOP−8 (Pb-Free) 100 Units / Rail MC10EP58DTR2G TSSOP−8 (Pb-Free) 2500 / Tape & Reel MC100EP58DG SOIC−8 NB (Pb-Free) 98 Units / Rail MC100EP58DR2G SOIC−8 NB (Pb-Free) 2500 / Tape & Reel MC100EP58DTG TSSOP−8 (Pb-Free) 100 Units / Rail MC100EP58DTR2G TSSOP−8 (Pb-Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Resource Reference of Application Notes AN1405/D − ECL Clock Distribution Techniques AN1406/D − Designing with PECL (ECL at +5.0 V) AN1503/D − ECLinPSt I/O SPiCE Modeling Kit AN1504/D − Metastability and the ECLinPS Family AN1568/D − Interfacing Between LVDS and ECL AN1672/D − The ECL Translator Guide AND8001/D − Odd Number Counters Design AND8002/D − Marking and Date Codes AND8020/D − Termination of ECL Logic Devices AND8066/D − Interfacing with ECLinPS AND8090/D − AC Characteristics of ECL Devices www.onsemi.com 8 MC10EP58, MC100EP58 PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H D 0.25 (0.010) M Z Y S X M J S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 9 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 MC10EP58, MC100EP58 PACKAGE DIMENSIONS TSSOP−8 CASE 948R−02 ISSUE A 8x 0.15 (0.006) T U 0.10 (0.004) S 2X L/2 L 8 5 1 PIN 1 IDENT 0.15 (0.006) T U K REF M T U V S 0.25 (0.010) B −U− 4 M A −V− S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 6. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. S F DETAIL E C 0.10 (0.004) −T− SEATING PLANE D −W− G DETAIL E DIM A B C D F G K L M MILLIMETERS MIN MAX 2.90 3.10 2.90 3.10 0.80 1.10 0.05 0.15 0.40 0.70 0.65 BSC 0.25 0.40 4.90 BSC 0_ 6_ INCHES MIN MAX 0.114 0.122 0.114 0.122 0.031 0.043 0.002 0.006 0.016 0.028 0.026 BSC 0.010 0.016 0.193 BSC 0_ 6_ ECLinPS is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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