Fairchild FMG1G400US60L Molding type module Datasheet

FMG1G400US60L
Molding Type Module
General Description
Fairchild IGBT Power Module provides low conduction and
switching losses as well as short circuit ruggedness. It’s
designed for the applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short-circuit ruggedness is required.
Features
•
•
•
•
•
•
Short Circuit Rated Time; 10us @ TC =100°C, VGE = 15V
High Speed Switching
Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 400A
High Input Impedance
Fast & Soft Anti-Parallel FWD
UL Certified No.E209204
Package Code : 7PM-IA
E1/C2
Application
•
•
•
•
•
AC & DC Motor Controls
General Purpose Inverters
Robotics
Servo Controls
UPS
E2
C1
G2
E2
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol
TC = 25°C unless otherwise noted
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TSC
TJ
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Short Circuit Withstand Time
Operating Junction Temperature
TSTG
Storage Temperature Range
VISO
Isolation Voltage
Power Terminal Screw : M6
Mounting Screw : M6
Mounting Torque
@ TC = 80°C
@ TC = 80°C
@ TC = 25°C
@ TC = 100°C
@ AC 1minute
FMG1G400US60L
600
± 20
400
800
400
800
1136
10
-40 to +150
Units
V
V
A
A
A
A
W
us
°C
-40 to +125
°C
2500
4.0
4.0
V
N.m
N.m
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
©2004 Fairchild Semiconductor Corporation
FMG1G400US60L Rev. A
FMG1G400US60L
IGBT
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
600
--
--
V
VGE = 0V, IC = 1mA
--
0.6
--
V/°C
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
---
---
250
± 100
uA
nA
5.0
--
6.5
2.1
8.5
2.7
V
V
-------------
160
220
230
150
9.5
21
320
240
290
230
11
26
---250
---------
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
VCC = 300 V, VGE = 15V
100°C
10
--
--
us
VCE = 300 V, IC =400A,
VGE = 15V
----
1200
310
490
----
nC
nC
nC
Min.
--
Typ.
1.9
Max.
2.8
Units
--
1.8
--
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
Gate - Emitter Leakage Current
VGE = 0V, IC = 250uA
On Characteristics
VGE(th)
VCE(sat)
Gate - Emitter Threshold Voltage
Collector to Emitter Saturation Voltage
IC = 400mA, VCE = VGE
IC = 400A, VGE = 15V
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
td(on)
tr
td(off)
tf
Eon
Eoff
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCC = 300 V, IC = 400A,
RG = 2Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 400A,
RG = 2Ω, VGE = 15V,
Inductive Load, TC = 125°C
@ TC =
Electrical Characteristics of DIODE
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
Diode Reverse Recovery Charge
TC = 25°C unless otherwise noted
Test Conditions
TC = 25°C
IF = 400A
TC = 100°C
IF = 400A
di / dt = 800 A/us
TC = 25°C
--
90
130
TC = 100°C
--
130
--
TC = 25°C
--
35
46
TC = 100°C
--
76
--
TC = 25°C
--
1580
3000
TC = 100°C
--
4940
--
V
ns
A
nC
Thermal Characteristics
Symbol
RθJC
RθJC
RθJC
Weight
Parameter
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Case-to-Sink
(Conductive grease applied)
Weight of Module
©2004 Fairchild Semiconductor Corporation
Typ.
--0.03
360
Max.
0.11
0.18
---
Units
°C/W
°C/W
°C/W
g
FMG1G400US60L Rev. A
FMG1G400US60L
Electrical Characteristics of IGBT
V
2
1
V V
0 5
2 1
Common Emitter
TC = 25℃
0
0
5
V
0
1
=
V
0
0
5
E
G
0
0
4
0
0
4
]
A
[
IC
,
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
C
0
0
3
0
0
3
0
0
2
0
0
2
0
0
1
0
0
1
0
0
4
]
V
[
E
E
C
Fig 2. Typical Saturation Voltage
Characteristics
V
2
1
]
V
[
5
.
3
0
0
5
V V
0 5
2 1
0
.
4
0
0
6
Common Emitter
TC = 125℃
3VC
,
e
g
a
t
l
o
V
r
2e
t
t
i
m
E
r
o
1t
c
e
l
l
o
C
0
]
0V
1[
V
,
e
g
a
t
l
o
V
r
e
t
t
i
m
E
1r
o
t
c
e
l
l
o
C
Fig 1. Typical Output Characteristics
Common Emitter
VGE = 15V
E
A
0
0
6
E
G
0
.
3
A
0
0
4
0
0
3
5
.
2
0
0
2
A
0
0
2
0
.
2
0
0
1
5
.
1
0
5
2
1
0
0
1
TC
,
e
r
u
t
a
5r
7e
p
m
e
T
e
s
E
C
0a
5C
5
2
4
]
V
[
3V
,
e
g
a
t
l
o
V
r
2e
t
t
i
m
E
r
o
1t
c
e
l
l
o
C
0
0
.
1
VC
,
e
g
a
t
l
o
V
r
e
t
t
i
m
E
r
o
t
c
e
l
l
o
C
V
0
1
=
V
0
0
4
]
A
[
IC
,
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
C
FMG1G400US60L
0
0
6
0
0
6
]
A
[
IC
,
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
C
Common Emitter
VGE = 15V
TC = 25℃
TC = 125℃
[℃]
Fig 3. Typical Saturation Voltage
Characteristics
Fig 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
0
0
0
0
1
f
T
0
0
1
4
1
2
1
]
[
0g
1R
,
e
c
n
a
8t
s
i
s
e
R
t
a
G
6e
4
2
]
[
g
R
,
e
c
n
a
t
s
i
s
e
R
e
t
a
G
©2004 Fairchild Semiconductor Corporation
4
1
2
1
0
1
8
6
4
2
Fig 5. Turn-On Characteristics vs.
Gate Resistance
0
0
0
1
r
T
0
0
1
Ω
]
s
n
[
e
m
i
T
g
n
i
h
c
t
i
w
S
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 400A
TC = 25℃ ━━
TC = 125℃ ------
f
f
o
T
n
o
T
0
0
0
1
]
s
n
[
e
m
i
T
g
n
i
h
c
t
i
w
S
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 400A
TC = 25℃ ━━
TC = 125℃ ------
Ω
Fig 6. Turn-Off Characteristics vs.
Gate Resistance
FMG1G400US60L Rev. A
n
o
T
r
T
n
o
E
0
1
]
s
n
[
e
m
i
T
g
n
i
h
c
t
i
w
S
0
0
0
1
f
f
o
E
]
J
m
[
s
s
o
L
g
n
i
h
c
t
i
w
S
Common Emitter
VGE = ± 15V, RG = 2Ω
TC = 25℃ ━━
TC = 125℃ ------
0
0
1
0
0
4
0
6
3
Fig 7. Switching Loss vs. Gate Resistance
Fig 8. Turn-On Characteristics vs.
Collector Current
0
1
n
o
E
f
f
o
T
f
T
]
J
m
[
s
s
o
L
g
n
i
h
c
t
i
w
S
f
f
o
E
Common Emitter
VGE = ± 15V, RG = 2Ω
TC = 25℃ ━━
TC = 125℃ ------
0
0
1
Common Emitter
VGE = ± 15V, RG = 2Ω
TC = 25℃ ━━
TC = 125℃ ------
0
0
0
1
]
s
n
[
e
m
i
T
g
n
i
h
c
t
i
w
S
0
2
3
]
A
[
IC
,
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
]
[
g
R
,
e
c
n
a
t
s
i
s
e
R
e
t
a
G
0 C
8
2
4
1
2
1
0
1
8
6
4
2
Ω
0
0
1
1
Common Emitter
IC = 400A
VCC = 300V
9
0
0
4
6
0
0
2
]
A
[
F
I
,
t
n
e
r
r
u
C
d
r
a
w
r
o
F
o
TC = 25 C
Common Cathode
VGE = 0V
TC = 25℃
TC = 125℃
0
0
6
E
G
0
0
4
0
0
8
2
1
3
0
0
V
,
e
g
a
t
l
o
V
r
e
t
t
i
m
E
e
t
a
G
0
6
3
]
A
[
IC
,
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
C
Fig 10. Switching Loss vs. Collector Current
5
1
]
V
[
0
2
3
0
8
2
0
0
4
0
6
3
0
2
3
]
A
[
IC
,
t
n
e
r
r
u
C
r
o
t
c
e
l
l
o
0
8 C
2
Fig 9. Turn-Off Characteristics vs.
Collector Current
4
]
3 V
[
VF
,
e
g
a
t
2 l
o
V
d
r
a
w
r
o
1 F
0
]
C
©2004 Fairchild Semiconductor Corporation
0
0
2
1
0
0
0
1
Q
,
0 n
0 [
8
g
a
h
C
0 e
0 g
6 r
G
0 e
0 t
4 a
0
0
2
0
Fig 11. Gate Charge Characteristics
Fig 12. Forward Characteristics (diode)
FMG1G400US60L Rev. A
FMG1G400US60L
0
0
1
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 400A
TC = 25℃ ━━
TC = 125℃ ------
FMG1G400US60L
0
0
1
Common Cathode
di/dt = 800A/㎲
TC = 25℃
TC = 100℃
Irr
trr
0
1
0
5
4
0
0
4
A
0
5
3 ]
0 [
0
3 IF
r
0 t
,
5 n
2 e
0 r
0 u
2 C
w
0 d
5 r
1 a
0 r
0 o
1 F
0
5
0
]
A]
[s
r
rn
I0
1
x
,
[
t
n r
r
e
r
T
r
u
,
Ce
m
y
i
r
eT
v
oy
cr
ee
Rv
o
ec
e
s
R
r
e
v
ee
s
Rr
e
kv
ae
eR
P
Fig 13. Reverse Recovery Characteristics(diode)
©2004 Fairchild Semiconductor Corporation
FMG1G400US60L Rev. A
FMG1G400US60L
Package Dimension
7PM-IA
62.0 ±0.60
25.0 ±0.50
48.0 ±0.60
25.0 ±0.50
27.0 ±0.60
4- Ø6.5 ±0.30
Mounting-Hole
15.0 ±0.60
48.5 ±0.50
3-M6
93.0 ±0.50
108.0 ±0.50
8.05 ±0.50
+0.20
32.0 ±0.50
22.45 -0.60
Name Plate
Ø1.3
CONVEX
5.95 ±0.60
30.15 -0.60
+0.20
3-14.0 ±0.50
+0.00
2.80 -0.50*0.5t
:20~200um
3-22.0 ±0.50
59.8 ±0.50
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
FMG1G400US60L Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT Quiet series™
ActiveArray™
FAST®
FASTr™
Bottomless™
FPS™
CoolFET™
CROSSVOLT™ FRFET™
GlobalOptoisolator™
DOME™
GTO™
EcoSPARK™
HiSeC™
E2CMOS™
EnSigna™
I2C™
ImpliedDisconnect™
FACT™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UltraFET®
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2004 Fairchild Semiconductor Corporation
Rev. I7
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