DYELEC BT151-650R Typical applications include motor control Datasheet

6&5
'HVFULSWLRQ
%7 Series R
Passivated thyristors in a plastic envelope, intended for use in
applications requiring high bidirectional blocking voltage capability
and high thermal cycling performance. Typical applications include
motor control, industrial and domestic lighting, heating and static
switching.
6\PERO
①
②
③
Ordering Information
Part No.
Package
Packing
BT151-500R
BT151-650R
TO-220
50pcs / Tube
TO-220
50pcs / Tube
BT151-800R
TO-220
50pcs / Tube
BT151F-400R
BT151F-650R
ITO-220
50pcs / Tube
ITO-220
50pcs / Tube
BT151F-800R
ITO-220
50pcs / Tube
Mar.2015-REV.00
www.sddydz.com
1 of 5
6&5
%7 Series R
ABSOLUTE MAXIMUM RATING (TJ = 25°C, unless otherwise stated)
PARAMETER
SYMBOL
RATINGS
UNIT
500 (Note 2)
BT151(F)-500R
V
Repetitive Peak Off-State Voltages
650 (Note 2)
BT151(F)-650R VDRM, VRRM
800
BT151(F)-800R
Average On-State Current (half sine wave; Tmb ≤109°C)
IT(AV)
7.5
A
RMS on-State Current (all conduction angles)
IT(RMS)
12
A
100
t = 10 ms
Non-Repetitive Peak On-State Current
A
ITSM
(half sine wave; TJ = 25 °C prior to surge) t = 8.3 ms
110
I2t for Fusing (t = 10 ms)
I2t
50
A2s
Repetitive Rate of Rise of On-State Current After Triggering
dIT /dt
50
A/μs
(ITM = 20 A; IG = 50 mA; dIG /dt = 50 mA/μs)
Peak Gate Current
IGM
2
A
Peak Gate Voltage
VGM
5
V
Peak Reverse Gate Voltage
VRGM
5
V
Peak Gate Power
PGM
5
W
Average Gate Power (Over any 20 ms period)
PG(AV)
0.5
W
Operating Junction Temperature
TJ
125
°C
Storage Temperature
TSTG
-40 ~150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Although not recommended, off-state voltages up to 800V may be applied without damage, but the
thyristor may switch to the on-state. The rate of rise of current should not exceed 15A/μs.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Mounting Base
TO-220
θJMb
1.3
K/W
Junction to Ambient
TO-220
θJA
60
K/W
STATIC CHARACTERISTICS (TJ = 25°C, unless otherwise stated)
PARAMETER
Gate Trigger Current
Latching Current
Holding Current
On-State Voltage
SYMBOL
IGT
IL
IH
VT
Gate Trigger Voltage
VGT
Off-State Leakage Current
I D , IR
CONDITIONS
VD = 12 V, IT = 0.1 A
VD = 12 V, IGT = 0.1 A
VD = 12 V, IGT = 0.1 A
IT = 23 A
VD = 12 V, IT = 0.1 A
VD = VDRM(max) , IT = 0.1 A, TJ = 125 °C
VD = VDRM(max) , VR = VRRM(max) ,TJ = 125°C
MIN
0.35
TYP
4.2
12.6
12
1.59
0.7
0.5
0.1
MAX
5
40
20
1.75
UNIT
mA
mA
mA
V
1.5
V
0.5
mA
DYNAMIC CHARACTERISTICS (TJ = 25°C, unless otherwise stated)
PARAMETER
Critical Rate of Rise of
Off-State Voltage
Gate Controlled Turn-on
Time
Circuit Commutated
Turn-off tIme
Mar.2015-REV.00
MIN
CONDITIONS
VDM = 67% VDRM(max), Gate open circuit 50
dVD /dt TJ = 125 °C,
200
exponential waveform; RGK = 100Ω
ITM = 40 A, VD = VDRM(max), IG = 0.1 A,
tGT
dIG /dt = 5 A/μs
VD = 67% VDRM(max), TJ = 125°C;
tQ
ITM = 20 A, VR = 25 V, dITM /dt = 30 A/μs,
dVD /dt = 50 V/μs, RGK = 100 Ω
SYMBOL
www.sddydz.com
MAX
130
1000
UNIT
V/μs
2
μs
70
μs
2 of 5
%7 Series R
6&5
TYPICAL CHARACTERISTICS
Fig 1. Maximum On-State Dissipation,
ptot, Versus Average On-State Current,
IT(AV), Where a=form factor=IT(RMS)/IT(AV)
15
Fig 2. Maximum Permissible Non-Repetitive Peak
On-State Current ITSM,Versus Pulse Width tp, for
Sinusoidal Currents, tp ≤ 10ms
Tmb(max)/°C
ITSM/A
105.5 1000
Ptot/W
Conduction form
angle
factor
degrees
a
4
30
2.8
60
10
2.2
90
1.9
120
1.57
180
2.2
1.9
α=1.57
112
2.8
dIT/dt limit
100
4
118.5
α
0
ITSM
IT
5
0
1
2
3
4 5
IT(AV)/A
6
T
7 8
125
time
TJ initial=25°C max
10
10µs
100µs
1ms
10ms
T/s
Fig 3. Maximum Permissible Rms Current
lT(RMS), Versus Mounting Base
Temperature Tmb
IT(RMS)/A
15
109°C
10
Fig 4. Maximum Permissible Non-Repetitive
Peak On-State Current ITSM,Versus Number Of
Cycles,For Sinusoidal Currents, f=50HZ
ITSM/A
120
ITSM
IT
100
T
time
80
TJ initial=25°C max
60
5
40
20
0
-50
Mar,2015-REV.00
0
50
100
Tmb/°C
150
0
1
10
100
1000
Number Of Half Cycles At 50Hz
www.sddydz.com
3 of 5
%7 Series
6&5
TYPICAL CHARACTERISTICS(Cont.)
Fig 7. Normalised Gate Trigger Current IGT(TJ)/
IGT(25°C), Versus Junction Temperature TJ
IGT(TJ)
IGT(25°C)
3
Fig 8. Normalised Latching Current
IL(TJ)/IL(25°C),
Versus Junction Temperature TJ
IL(TJ)
IL(25°C)
3
2.5
2.5
2
2
1.5
1.5
1
1
0.5
0.5
0
-50
0
50
TJ/°C
100
0
-50
150
Fig 9. Normalised Holding Current IH(TJ)/IH(25
Versus Junction Temperature TJ
3
IH(TJ)
IH(25°C)
0
50
TJ/°C
100
150
),
Fig 10. Typical and Maximum On-State
Characteristic
30 IT/A
TJ=125°C
25 TJ=25°C
2.5
2
20
1.5
15
1
10
0.5
5
0
-50
0
50
TJ/°C
100
150
Fig 11.Transient Thermal Impedance Zthj-mb,
Versus Pulse Width tp
Zth j-mb(K/W)
10
1
0
typ
0
0.5
1
VT/V
2
RGK=100Ω
0.1
tp
1.5
Fig 12. Typical, Critical Rate Of Rise
Of Off-State Voltage, dVD/dt Versus
Junction Temperature TJ
dVD/dt(V/µs)
10000
1000
PD
max
100
0.01
t
0.001
10us 0.1ms 1ms 10ms 0.1s 1s
gate open circuit
10s
10
0
tp/s
Mar.2015-REV.00
50
100
150
TJ/°C
www.sddydz.com
4 of 5
6&5
%7 Series
TO-220 Mechanical Drawing
ITO-220 Mechanical Drawing
Mar,2015-REV.00
www.sddydz.com
5 of 5
Similar pages