IXYS IXFH16N50P Polarhv hiperfet power mosfet Datasheet

IXFA16N50P
IXFP16N50P
IXFH16N50P
PolarHVTM HiperFET
Power MOSFET
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
= 500V
= 16A
Ω
≤ 400mΩ
≤ 200ns
TO-263
G
S
(TAB)
TO-220
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C RGS = 1MΩ
500
500
V
V
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
16
35
A
A
IA
EAS
TC = 25°C
TC = 25°C
16
750
A
mJ
dV/dt
IS ≤ IDM, VDD ≤ VDSS , TJ ≤ 150°C
10
V/ns
PD
TC = 25°C
300
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
(TO-220 & TO-247)
1.13 / 10
(TO-263)
10..65 / 2.2..14.6
Nmlb.in.
N/lb.
2.5
3.0
6.0
g
g
g
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 Seconds
Md
FC
Mounting Torque
Mounting Force
Weight
TO-263
TO-220
TO-247
G
(TAB)
D S
TO-247
G
D
(TAB)
S
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z
z
z
z
International Standard Packages
Avalanche Rated
Fast Intrinsic Diode
Low Package Inductance
Advantages
z
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 250μA
500
VGS(th)
VDS = VGS, ID = 2.5mA
3.0
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS, VGS= 0V
RDS(on)
z
TJ = 125°C
High Power Density
Easy to Mount
Space Savings
V
5.5
V
± 100 nA
VGS = 10V, ID = 0.5 • ID25, Note 1
© 2009 IXYS CORPORATION, All Rights Reserved
z
15 μA
250 μA
400 mΩ
Applications
z
z
z
z
z
Switched-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
DS99357F(05/09)
IXFA16N50P
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs
Characteristic Values
Min. Typ.
Max.
VDS= 20V, ID = 0.5 • ID25, Note 1
9
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
Qg(on)
Qgs
VGS= 10V, VDS = 0.5 • VDSS , ID = 0.5 • ID25
Qgd
16
S
2480
pF
237
pF
18
pF
23
ns
25
ns
70
ns
22
ns
43
nC
15
nC
12
nC
TO-220 (IXFP) Outline
Pins:
1 - Gate
2 - Drain
0.42 °C/W
RthJC
RthCH
IXFP16N50P
IXFH16N50P
(TO-220)
0.50
°C/W
(TO-247)
0.21
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
16
A
ISM
Repetitive, Pulse Width Limited by TJM
64
A
VSD
IF = IS, VGS = 0V, Note 1
1.5
V
trr
IRM
QRM
IF = 16A, -di/dt = 100A/μs
200
ns
A
nC
6.0
0.6
VR = 100V, VGS = 0V
TO-247 (IXFH) Outline
1
2
3
∅P
Note 1: Pulse test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
TO-263 (IXFA) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
∅P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
R
S
4.32
6.15
5.49
BSC
.170
242
.216
BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFA16N50P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Output Characteristics
@ 125ºC
20
20
VGS = 10V
8V
18
VGS = 10V
8V
7V
18
16
16
14
ID - Amperes
14
ID - Amperes
IXFP16N50P
IXFH16N50P
7V
12
10
8
12
10
6V
8
6
6
4
4
6V
2
5V
2
0
0
0
1
2
3
4
5
6
7
8
9
0
2
4
6
8
10
12
Fig. 3. RDS(on) Normalized to ID = 8A Value
vs. Junction Temperature
16
18
20
18
20
Fig. 4. RDS(on) Normalized to ID = 8A Value
vs. Drain Current
3.2
2.8
VGS = 10V
2.8
VGS = 10V
2.6
2.4
2.4
R DS(on) - Normalized
R DS(on) - Normalized
14
VDS - Volts
VDS - Volts
I D = 16A
2.0
1.6
I D = 8A
1.2
TJ = 125ºC
2.2
2.0
1.8
1.6
1.4
TJ = 25ºC
1.2
0.8
1.0
0.4
0.8
-50
-25
0
25
50
75
100
125
150
0
2
4
6
Fig. 5. Maximum Drain Current vs.
Case Temperature
10
12
14
16
Fig. 6. Input Admittance
18
20
16
18
16
14
14
12
ID - Amperes
ID - Amperes
8
ID - Amperes
TJ - Degrees Centigrade
10
8
6
TJ = 125ºC
25ºC
- 40ºC
12
10
8
6
4
4
2
2
0
0
-50
-25
0
25
50
75
TJ - Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved
100
125
150
4.0
4.4
4.8
5.2
5.6
VGS - Volts
6.0
6.4
6.8
7.2
IXFA16N50P
IXFP16N50P
IXFH16N50P
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
Fig. 7. Transconductance
28
70
TJ = - 40ºC
24
60
50
25ºC
IS - Amperes
g f s - Siemens
20
16
125ºC
12
40
30
8
20
4
10
TJ = 125ºC
TJ = 25ºC
0
0
0
2
4
6
8
10
12
14
16
18
0.3
20
0.4
0.5
ID - Amperes
0.6
0.7
0.8
0.9
1
1.1
1.2
VSD - Volts
Fig. 9. Gate Charge
Fig. 10. Capacitance
10,000
10
9
VDS = 250V
8
I G = 10mA
Capacitance - PicoFarads
I D = 8A
VGS - Volts
7
6
5
4
3
Ciss
1,000
100
Coss
10
Crss
2
1
f = 1 MHz
1
0
0
5
10
15
20
25
30
35
40
0
45
5
10
15
20
25
30
35
40
VDS - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Forward-Bias Safe Operating Area
1.00
100
Z(th)JC - ºC / W
ID - Amperes
RDS(on) Limit
25µs
0.10
10
100µs
1ms
TJ = 150ºC
TC = 25ºC
Single Pulse
10ms
DC
1
10
100
1000
VDS - Volts
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_16N50P(5J-745)5-1-09-C
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