IRF IRF9332PBF Industry-standard so-8 package Datasheet

PD - 97561
IRF9332PbF
HEXFET® Power MOSFET
VDS
-30
V
17.5
mΩ
28.1
mΩ
Qg (typical)
14
nC
ID
-9.8
A
RDS(on) max
(@VGS = -10V)
RDS(on) max
(@VGS = -4.5V)
(@TA = 25°C)
6
'
6
'
6
'
*
'
SO-8
Applications
• Charge and Discharge Switch for Notebook PC Battery Application
• System/Load Switch
Features and Benefits
Features
Industry-Standard SO-8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Orderable part number
Package Type
IRF9332PbF
IRF9332TRPbF
SO8
SO8
Resulting Benefits
results in Multi-Vendor Compatibility
Environmentally Friendlier
⇒
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Note
Absolute Maximum Ratings
Parameter
Max.
VDS
Drain-to-Source Voltage
-30
VGS
Gate-to-Source Voltage
±20
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
-9.8
ID @ TA = 70°C
Continuous Drain Current, VGS @ -10V
-7.8
IDM
Pulsed Drain Current
-80
PD @TA = 25°C
Power Dissipation
PD @TA = 70°C
f
Power Dissipation f
c
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through † are on page 2
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1
09/01/2010
IRF9332PbF
Static @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Max.
Units
BVDSS
Drain-to-Source Breakdown Voltage
Parameter
-30
–––
–––
V
∆ΒVDSS/∆TJ
RDS(on)
Breakdown Voltage Temp. Coefficient
–––
–––
0.021
13.6
–––
17.5
V/°C
–––
22.5
28.1
Static Drain-to-Source On-Resistance
mΩ
VGS(th)
Gate Threshold Voltage
-1.3
-1.9
-2.4
V
∆VGS(th)
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
-5.7
–––
–––
-1.0
mV/°C
–––
–––
-150
µA
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
-100
100
nA
gfs
Qg
Forward Transconductance
Total Gate Charge
36
–––
–––
14
–––
–––
S
nC
Qg
Qgs
Gate-to-Source Charge
–––
–––
27
4.1
41
–––
nC
–––
–––
6.6
18
–––
–––
Turn-On Delay Time
Rise Time
–––
–––
15
47
–––
–––
td(off)
Turn-Off Delay Time
–––
73
–––
tf
Ciss
Fall Time
Input Capacitance
–––
–––
58
1270
–––
–––
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
–––
–––
250
180
–––
–––
Qgd
RG
td(on)
tr
h
Total Gate Charge h
h
h
Gate-to-Drain Charge
Gate Resistance h
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -9.8A
e
e
VGS = -4.5V, ID = -7.8A
VDS = VGS, ID = -25µA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VDS = -10V, ID = -7.8A
VDS = -15V,VGS = -4.5V,ID = -7.8A
VGS = -10V
VDS = -15V
ID = -7.8A
Ω
ns
VDD = -15V, VGS = -4.5V
ID = -1.0A
e
RG = 6.8Ω
See Figs. 19a & 19b
VGS = 0V
pF
VDS = -25V
ƒ = 1.0KHz
Avalanche Characteristics
Parameter
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
c
Diode Characteristics
Parameter
d
Min.
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
Typ.
Typ.
Max.
Units
–––
–––
102
-7.8
mJ
A
Max.
–––
–––
-2.5
–––
–––
-80
Units
A
c
(Body Diode)
VSD
Diode Forward Voltage
–––
–––
-1.2
trr
Reverse Recovery Time
–––
36
Qrr
Reverse Recovery Charge
–––
20
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
RθJL
Junction-to-Drain Lead
RθJA
Junction-to-Ambient
f
g
G
S
e
V
TJ = 25°C, IS = -2.5A, VGS = 0V
54
ns
TJ = 25°C, IF = -2.5A, VDD = -24V
30
nC
di/dt = 100/µs
Thermal Resistance
Parameter
D
Typ.
Max.
–––
20
–––
50
e
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 3.3mH, RG = 25Ω, IAS = -7.8A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C.
† For DESIGN AID ONLY, not subject to production testing.
2
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IRF9332PbF
100
100
10
BOTTOM
TOP
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
TOP
VGS
-10V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.7V
-2.5V
1
0.1
-2.5V
≤60µs PULSE WIDTH
10
BOTTOM
1
-2.5V
≤60µs PULSE WIDTH
Tj = 150°C
Tj = 25°C
0.01
0.1
0.1
1
10
100
0.1
-V DS, Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
100
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current (A)
1
-V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
T J = 150°C
T J = 25°C
1
VDS = -10V
≤60µs PULSE WIDTH
0.1
ID = -9.8A
VGS = -10V
1.4
1.2
1.0
0.8
0.6
1
2
3
4
5
6
-60 -40 -20 0
Fig 3. Typical Transfer Characteristics
10000
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
-VGS, Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance vs. Temperature
14.0
VGS = 0V,
f = 1 KHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
-VGS, Gate-to-Source Voltage (V)
ID= -7.8A
C oss = C ds + C gd
C, Capacitance (pF)
VGS
-10V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.7V
-2.5V
Ciss
1000
Coss
Crss
100
12.0
VDS= -24V
VDS= -15V
VDS= -6.0V
10.0
8.0
6.0
4.0
2.0
0.0
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
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0
10
20
30
40
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
IRF9332PbF
1000
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 150°C
T J = 25°C
10
100µsec
10
1msec
DC
1
0.1
Tj = 150°C
Single Pulse
VGS = 0V
1.0
0.01
0.3
0.5
0.7
0.9
1.1
1.3
0.01
-V SD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
-VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
10
-V GS(th), Gate threshold Voltage (V)
2.4
8
-I D, Drain Current (A)
10msec
T A = 25°C
6
4
2
0
2.2
2.0
1.8
ID = -25µA
1.6
1.4
1.2
1.0
25
50
75
100
125
150
-75 -50 -25
T A , Ambient Temperature (°C)
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Thermal Response ( Z thJA ) °C/W
100
D = 0.50
10
0.20
0.10
1
0.02
0.01
0.05
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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50
RDS(on), Drain-to -Source On Resistance ( mΩ)
RDS(on), Drain-to -Source On Resistance (m Ω)
IRF9332PbF
ID = -9.8A
40
30
T J = 125°C
20
10
T J = 25°C
0
0
5
10
15
20
40
Vgs = -4.5V
30
20
10
Vgs = -10V
0
25
0
10
20
30
40
60
70
80
Fig 13. Typical On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
500
1000
ID
TOP
-2.0A
-2.8A
BOTTOM -7.8A
800
Single Pulse Power (W)
400
300
200
100
600
400
200
0
25
50
75
100
125
0
1E-5
150
1E-4
Starting T J , Junction Temperature (°C)
D.U.T *
1E-2
Driver Gate Drive
+
‚
-
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
di/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
+
-
Re-Applied
Voltage
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Body Diode
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VDD
Forward Drop
Inductor
Current
Inductor Curent
Ripple ≤ 5%
Reverse Polarity of D.U.T for P-Channel
P.W.
Period
*

•
•
•
•
1E+0
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
„
D=
Period
P.W.
-
1E-1
Fig 15. Typical Power vs. Time
+
ƒ
RG
1E-3
Time (sec)
Fig 14. Maximum Avalanche Energy vs. Drain Current
*
50
-ID, Drain Current (A)
-V GS, Gate -to -Source Voltage (V)
EAS , Single Pulse Avalanche Energy (mJ)
50
ISD
* VGS = 5V for Logic Level Devices
Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
5
IRF9332PbF
Id
Vds
Vgs
L
VCC
DUT
0
20K
1K
Vgs(th)
SS
Qgodr
Fig 17a. Gate Charge Test Circuit
I AS
D.U.T
RG
IAS
-V
GS
-20V
tp
Qgs2 Qgs1
Fig 17b. Gate Charge Waveform
L
VDS
Qgd
VDD
A
DRIVER
0.01Ω
tp
V(BR)DSS
15V
Fig 18b. Unclamped Inductive Waveforms
Fig 18a. Unclamped Inductive Test Circuit
VDS
RD
td(on)
VGS
RG
t d(off)
tf
VGS
D.U.T.
-
+
10%
V DD
-VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 19a. Switching Time Test Circuit
6
tr
90%
VDS
Fig 19b. Switching Time Waveforms
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IRF9332PbF
SO-8 Package Outline(Mosfet
Dimensions are shown in milimeters (inches)
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SO-8 Part Marking Information
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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7
IRF9332PbF
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Qualification Information†
Qualification level
Moisture Sensitivity Level
RoHS Compliant
†
††
†††
Consumer††
(per JEDEC JESD47F††† guidelines)
MSL1
SO-8
(per JEDEC J-STD-020D†††)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/2010
8
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