MOTOROLA MC33290

Order this document by MC33290/D
The MC33290 is a serial link bus interface device designed to provide
bi–directional half–duplex communication interfacing in automotive
diagnostic applications. It is designed to interface between the vehicle’s
on–board microcontroller and systems off–board the vehicle via the special
ISO K line. The MC33290 is designed to meet the “Diagnostic Systems
ISO9141” specification. The device’s K line bus driver’s output is fully
protected against bus shorts and over temperature conditions.
The MC33290 derives it’s robustness to temperature and voltage
extremes from being built on a SMARTMOS process, incorporating CMOS
logic, bipolar/MOS analog circuitry, and DMOS power FETs. Though the
MC33290 was principally designed for automotive applications, it is suited for
other serial communication applications. It is parametrically specified over an
ambient temperature range of –40°C ≤ TA ≤ 125°C and 8.0 V ≤ VBat ≤ 18 V
supply. The economical 8 pin DIP and SO–8 surface mount plastic packages
make the MC33290 very cost effective.
• Designed to Operate Over Wide Supply Voltage of 8.0 to 18 V
•
•
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ISO SERIAL LINK
INTERFACE
SEMICONDUCTOR
TECHNICAL DATA
8
Ambient Operating Temperature of –40°C to 125°C
1
Interfaces Directly to Standard CMOS Microprocessors
P SUFFIX
PLASTIC PACKAGE
CASE 626
ISO K Line Pin Protected Against Shorts to Ground
Thermal Shutdown with Hysteresis
Maximum Transmission Speeds in Excess of 50 k Baud
ISO K Line Pin Capable of High Currents
ISO K Line can be Driven with up to 10 nF of Parasitic Capacitance
8
8.0 kV ESD Protection Attainable with Few Additional Components
1
Standby Mode: No VBat Current Drain with VDD at 5.0 V
D SUFFIX
PLASTIC PACKAGE
CASE 751
(SO–8)
Low Current Drain during Operation with VDD at 5.0 V
Typical Application Schematic
+VBat
On–Board Diagnostic Link
Service Scan Tool
or
End of Production Line
Programming
or
System Checking
510 Ω
45 V(2)
D(1)
+VDD
MCU
VCC
500 Ω(2)
MC33290
VBB
5.0 V
7
VDD
1
1.0 nF
Dx
SCIRxD
8
6
SCITxD
CEN
Rx
Tx
5
ISO
10 nF(3)
5.0 nF(3)
ISO
K Line
TxD
PIN CONNECTIONS
VBB
N/C
1
8 Tx
2
Gnd
ISO
(K Line I/O)
3
7 Rx
6 VDD
4
5 CEN
(Top View)
RxD
4
27 V(3)
Gnd
3
Components Necessary for: Reverse Battery (1), Overvoltage Transient (2), and
8.0 kV ESD Protection (3) in a metal module case.
ORDERING INFORMATION
Device
MC33290D
This device contains 85 active transistors.
This document contains information on a new product. Specifications and information herein
are subject to change without notice.
MOTOROLA ANALOG IC DEVICE DATA
MC33290P
Operating
Temperature Range
TA = –40° to +125°C
 Motorola, Inc. 1997
Package
SO–8
DIP–8
Rev 0
1
MC33290
Figure 1. Simplified Block Diagram
VBB
1
Rx
6
ISO
4
Master
Bias
CEN
8
VDD
7
Tx
RHys
40 V
Thermal
Shutdown
Gnd
3
5
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MAXIMUM RATINGS (All voltages are with respect to ground, unless otherwise noted.)
Rating
VDD DC Supply Voltage
Symbol
Value
Unit
VDD
–0.3 to 7.0
V
VBB(LD)
45
V
VISO
40
V
ISO Short Circuit Current Limit
IISO(LIM)
1.0
A
ESD Voltage (Note 1)
Human Body Model (Note 2)
Machine Model (Note 3)
VESD1
VESD2
2000
200
ISO Clamp Energy (Note 4)
VBB Load Dump Peak Voltage
ISO Pin Load Dump Peak Voltage
V
Eclamp
10
mJ
Storage Temperature
Tstg
–55 to +150
°C
Operating Case Temperature
TC
–40 to +125
°C
Operating Junction Temperature
TJ
–40 to +150
°C
Power Dissipation (TA = 25°C)
PD
0.8
W
Tsolder
260
°C
RθJA
150
°C/W
Soldering Temperature (for 10 seconds)
Thermal Resistance (Junction–to–Ambient)
NOTES: 1. ESD data available upon request.
2. Testing in accordance with Human Body Model (CZap = 100 pF, RZap = 1500 Ω).
3. Testing in accordance with Machine Model (CZap = 100 pF, RZap = 0Ω).
4. Non–repetitive clamping capability at 25°C.
ELECTRICAL CHARACTERISTICS (Characteristics noted under conditions of 4.75 V ≤ VDD ≤ 5.25 V, 8.0 V ≤ VBB,
HSIP ≤ 18.0 V, –40°C ≤ TC ≤ 125°C, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
VDD Sleep State Current (HSIM = HSIP, LSIM = LSIP = 0 V,
VRSM = VRSP = 0 V, Tx = 0.8 VDD, CEN = 0.3 VDD)
IDD(SS)
–
–
0.1
mA
VDD Quiescent Operating Current (HSIM = HSIP – 0.3 V, LSIM = 0 V,
LSIP = 0.3 V, VRSM = 0 V, VRSP = –0.5 V, Tx = 0.2 VDD, CEN = 0.7 VDD)
IDD(Q)
–
–
1.0
mA
VBB Sleep State Current (VBB = 16 V, HSIM = HSIP, LSIM = LSIP = 0 V,
VRSM = VRSP = 0 V, Tx = 0.8 VDD, CEN = 0.3 VDD)
IBB(SS)
–
–
50
µA
VBB Quiescent Operating Current (HSIM = HSIP – 0.3 V, LSIM = 0 V,
LSIP = 0.3 V, VRSM = 0 V, VRSP = –0.5 V, Tx = 0.2 VDD, CEN = 0.7 VDD)
IBB(Q)
–
–
1.0
mA
VIH(CEN)
VIL(CEN)
0.7 VDD
–
–
–
–
0.3 VDD
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POWER AND CONTROL
Chip Enable
Input High Voltage Threshold (Note 1)
Input Low Voltage Threshold (Note 2)
V
NOTES: 1. When IBB transitions to >100 µA.
2. When IBB transitions to <100 µA.
2
MOTOROLA ANALOG IC DEVICE DATA
MC33290
ELECTRICAL CHARACTERISTICS (continued) (Characteristics noted under conditions of 4.75 V ≤ VDD ≤ 5.25 V, 8.0 V ≤ VBB,
HSIP ≤ 18.0 V, –40°C ≤ TC ≤ 125°C, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
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POWER AND CONTROL
Chip Enable Pull–Down Current (Note 3)
IPD(CEN)
2.0
–
40
µA
Tx Input Low Voltage Threshold (RISO = 510 Ω) (Note 4)
VLTP(Tx)
–
–
0.3 x VDD
V
Tx Input High Voltage Threshold (RISO = 510 Ω) (Note 5)
VUTP(Tx)
0.7 x VDD
–
–
V
Tx Pull–Up Current (Note 6)
IPU(Tx)
–40
–
–2.0
µA
Rx Output Low Voltage Threshold (RISO = 510 Ω, Tx = 0.2 VDD,
Rx Sinking 1.0 mA)
VL(Rx)
–
–
0.2 VDD
V
Rx Output High Voltage Threshold (RISO = 510 Ω, Tx = 0.8 VDD,
Rx Sourcing 250 µA)
VH(Rx)
0.8 VDD
–
–
V
TLIM
150
170
–
°C
Thermal Shutdown (Note 7)
NOTES 3. Enable pin has an internal current pull–down equivalent to greater than 50 kΩ.
4. Measured by ramping Tx down from 0.7 VDD to 0.3 VDD and noting Tx value at which ISO falls below 0.2 VBB.
5. Measured by ramping Tx up from 0.3 VDD to 0.7 VDD and noting the value at which ISO rises above 0.9 VBB.
6. Tx pin has internal current pull–up equivalent to greater than 50 kΩ. Pull–Up current measure with Tx pin at 0.7 VDD.
7. Thermal Shutdown performance (TLIM) is guaranteed by design but not production tested.
ELECTRICAL CHARACTERISTICS (Characteristics noted under conditions of 4.75 V ≤ VDD ≤ 5.25 V, 8.0 V ≤ VBB, HSIP ≤ 18.0 V,
–40°C ≤ TC ≤ 125°C, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Input Low Voltage Threshold (RISO = 0 Ω, Tx = 0.8 VDD) (Note 1)
VLTP(ISO)
–
–
0.4 x VBB
V
Input High Voltage Threshold (RISO = 0 Ω, Tx = 0.8 VDD) (Note 2)
VUTP(ISO)
0.8 x VBB
–
–
V
Input Hysteresis (Note 3)
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ISO I/O
VHys(ISO)
0.01 x VBB
–
0.1 x VBB
V
Internal Pull–Up Current (Note 4)
(RISO = ∞ Ω, Tx = 0.8 VDD, VISO = 0.5 VBB)
IPU(ISO)
–5.0
–
–90
µA
Short Circuit Current Limit (Note 5) (RISO = 0 Ω, Tx = 0.4 VDD, VISO = VBB)
ISC(ISO)
50
–
1000
mA
Output Low Voltage Threshold (RISO = 510 Ω, Tx = 0.2 VDD)
VL(ISO)
–
–
0.125 x VBB
V
Output High Voltage Threshold (RISO = ∞ Ω, Tx = 0.8 VDD)
VH(ISO)
0.95 x VBB
–
–
V
Fall Time (Note 6) (RISO = 510 Ω to VBB, CISO = 10 nF to Ground)
tfall(ISO)
–
–
2.0
µs
ISO Propagation Delay (Note 7)
High to Low; (RISO = 510 Ω, CISO = 500 pF) (Note 8)
Low to High; (RISO = 510 Ω, CISO = 500 pF) (Note 9)
tPD(ISO)
–
–
–
–
2.0
2.0
µs
NOTES: 1. ISO ramped from 0.8 VBB to 0.4 VBB, Monitor Rx, Value of ISO voltage at which Rx transitions to 0.3 VDD.
2. ISO ramped from 0.4 VBB to 0.8 VBB, Monitor Rx, Value of ISO voltage at which Rx transitions to 0.7 VDD.
3. Input Hysteresis, VHys(ISO) = VUTP(ISO) – VLTP(ISO).
4. ISO Pull–Up has >100 kΩ internal pull–up to VBB.
5. ISO has internal current limit.
6. Time required ISO voltage to transition from 0.8 VBB to 0.2 VBB.
7. Changes in the value of CISO affect the rise and fall time but have minimal effect on Propagation Delay.
8. Step Tx voltage from 0.2 VDD to 0.8 VDD; Time measured from VUTP(ISO) until VISO reaches 0.3 VBB.
9. Step Tx voltage from 0.8 VDD to 0.2 VDD; Time measured from VLTP(ISO) until VISO reaches 0.7 VBB.
MOTOROLA ANALOG IC DEVICE DATA
3
MC33290
OUTLINE DIMENSIONS
D SUFFIX
PLASTIC PACKAGE
CASE 751–05
ISSUE R
(SO–8)
D
A
8
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETERS.
3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.
C
5
0.25
H
E
B
M
M
1
4
B
e
h
A
C
X 45 _
q
SEATING
PLANE
0.10
A1
B
0.25
L
M
C B
8
S
A
S
q
NOTES:
1. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
2. PACKAGE CONTOUR OPTIONAL (ROUND OR
SQUARE CORNERS).
3. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–B–
4
F
–A–
NOTE 2
L
C
J
–T–
N
SEATING
PLANE
D
H
MILLIMETERS
MIN
MAX
1.35
1.75
0.10
0.25
0.35
0.49
0.18
0.25
4.80
5.00
3.80
4.00
1.27 BSC
5.80
6.20
0.25
0.50
0.40
1.25
0_
7_
P SUFFIX
PLASTIC PACKAGE
CASE 626–05
ISSUE K
5
1
DIM
A
A1
B
C
D
E
e
H
h
L
M
K
DIM
A
B
C
D
F
G
H
J
K
L
M
N
MILLIMETERS
MIN
MAX
9.40
10.16
6.10
6.60
3.94
4.45
0.38
0.51
1.02
1.78
2.54 BSC
0.76
1.27
0.20
0.30
2.92
3.43
7.62 BSC
–––
10_
0.76
1.01
INCHES
MIN
MAX
0.370
0.400
0.240
0.260
0.155
0.175
0.015
0.020
0.040
0.070
0.100 BSC
0.030
0.050
0.008
0.012
0.115
0.135
0.300 BSC
–––
10_
0.030
0.040
G
0.13 (0.005)
M
T A
M
B
M
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
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Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;
P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315
Mfax: [email protected] – TOUCHTONE 602–244–6609
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
INTERNET: http://www.mot.com/SPS/
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