Diotec BC548A Si-epitaxial planartransistor Datasheet

BC 546 ... BC 549
NPN
General Purpose Transistors
Si-Epitaxial PlanarTransistors
NPN
Power dissipation – Verlustleistung
500 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard Pinning
1=C 2=B 3=E
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25/C)
Grenzwerte (TA = 25/C)
BC 546
BC 547
BC 548/549
Collector-Emitter-voltage
B open
VCE0
65 V
45 V
30 V
Collector-Emitter-voltage
B shorted
VCES
85 V
50 V
30 V
Collector-Base-voltage
E open
VCB0
80 V
50 V
30 V
Emitter-Base-voltage
C open
VEB0
6V
6V
5V
1
Power dissipation – Verlustleistung
Ptot
500 mW )
Collector current – Kollektorstrom (DC)
IC
100 mA
Peak Coll. current – Kollektor-Spitzenstrom
ICM
200 mA
Peak Base current – Basis-Spitzenstrom
IBM
200 mA
Peak Emitter current – Emitter-Spitzenstrom
- IEM
200 mA
Junction temp. – Sperrschichttemperatur
Tj
150/C
Storage temperature – Lagerungstemperatur
TS
- 65…+ 150/C
Characteristics, Tj = 25/C
Kennwerte, Tj = 25/C
Group A
Group B
Group C
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 5 V, IC = 10 :A
hFE
typ. 90
typ. 150
typ. 270
VCE = 5 V, IC = 2 mA
hFE
110...220
200...450
420...800
VCE = 5 V, IC = 100 mA
hFE
typ. 120
typ. 200
typ.400
Small signal current gain – Stromverst.
hfe
typ. 220
typ. 330
typ. 600
Input impedance – Eingangsimpedanz
hie
1.6...4.5 kS
3.2...8.5 kS
6...15 kS
Output admittance – Ausgangsleitwert
hoe
18 < 30 :S
30 < 60 :S
60 < 110 :S
Reverse voltage transfer ratio
Spannungsrückwirkung
hre
typ.1.5 *10-4
typ. 2 *10-4
typ. 3 *10-4
h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz
1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
6
01.11.2003
General Purpose Transistors
BC 546 ... BC 549
Characteristics, Tj = 25/C
Kennwerte, Tj = 25/C
Min.
Typ.
Max.
Collector saturation voltage – Kollektor-Sättigungsspannung
IC = 10 mA, IB = 0.5 mA
VCEsat
–
80 mV
200 mV
IC = 100 mA, IB = 5 mA
VCEsat
–
200 mV
600 mV
IC = 10 mA, IB = 0.5 mA
VBEsat
–
700 mV
–
IC = 100 mA, IB = 5 mA
VBEsat
–
900 mV
–
Base saturation voltage – Basis-Sättigungsspannung
Base-Emitter voltage – Basis-Emitter-Spannung
VCE = 5 V, IC = 2 mA
VBE
580 mV
660 mV
700 mV
VCE = 5 V, IC = 10 mA
VBE
–
–
720 mV
Collector-Emitter cutoff current – Kollektorreststrom
VCE = 80 V
BC 546
ICES
–
0.2 nA
15 nA
VCE = 50 V
BC 547
ICES
–
0.2 nA
15 nA
VCE = 30 V
BC 548
ICES
–
0.2 nA
15 nA
VCE = 30 V
BC 549
ICES
–
0.2 nA
15 nA
Collector-Emitter cutoff current – Kollektorreststrom
VCE = 80 V, Tj = 125/C
BC 546
ICES
–
–
4 :A
VCE = 50 V, Tj = 125/C
BC 547
ICES
–
–
4 :A
VCE = 30 V, Tj = 125/C
BC 548
ICES
–
–
4 :A
VCE = 30 V, Tj = 125/C
BC 549
ICES
–
–
4 :A
fT
–
300 MHz
–
CCB0
–
3.5 pF
6 pF
CEB0
–
9 pF
–
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, f = 1 MHz
Noise figure – Rauschmaß
VCE = 5 V, IC = 200 :A
BC 547
F
–
2 dB
10 dB
RG = 2 kS f = 1 kHz,
BC 548
F
–
1.2 dB
4 dB
) f = 200 Hz
BC 549
F
–
1.2 dB
4 dB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
250 K/W 1)
RthA
BC 556 ... BC 559
BC 546A
BC 547A
BC 548A
BC 546B
BC 547B
BC 548B
BC 549B
BC 547C
BC 548C
BC 549C
1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
01.11.2003
7
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