PHILIPS BLF1822-10 Uhf power ldmos transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D381
BLF1822-10
UHF power LDMOS transistor
Product specification
Supersedes data of 2002 Mar 12
2003 Feb 10
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1822-10
FEATURES
PINNING - SOT467C
• Typical 2-tone performance at a supply voltage of 26 V
and IDQ of 85 mA:
PIN
– Output power = 10 W (PEP)
– Gain = 18.5 dB at 900 MHz, 13.5 dB at 2200 MHz
DESCRIPTION
1
drain
2
gate
3
source, connected to flange
– Efficiency = 39% at 900 MHz, 34% at 2200 MHz
– dim = −31 dBc at 900 MHz, −28 dBc at 2200 MHz
• Easy power control
• Excellent ruggedness
• High power gain
• Excellent thermal stability
1
• Designed for broadband operation (HF to 2200 MHz)
• No internal matching for broadband operation.
3
2
APPLICATIONS
• RF power amplifiers for GSM, EDGE, CDMA and
W-CDMA base stations and multicarrier applications in
the HF to 2200 MHz frequency range
Top view
MBK584
• Broadcast drivers.
Fig.1 Simplified outline.
DESCRIPTION
10 W LDMOS power transistor for base station
applications at frequencies from HF to 2200 MHz.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF
OPERATION
CW, class-AB (2-tone)
PL
(W)
Gp
(dB)
ηD
(%)
f
(MHz)
VDS
(V)
IDQ
(mA)
f1 = 2200; f2 = 2200.1
26
85
10 (PEP) >11; typ. 13.5 >30; typ. 34 ≤−26; typ. −28
f1 = 960; f2 = 960.1
26
85
10 (PEP)
typ. 18.5
typ. 39
dim
(dBc)
typ. −33
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Feb 10
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1822-10
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
65
V
VGS
gate-source voltage
−
±15
V
ID
drain current (DC)
−
2.2
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
200
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
thermal resistance from junction to mounting base
Rth mb-h
thermal resistance from mounting base to heatsink
VALUE
UNIT
5
K/W
0.5
K/W
Tmb = 25 °C; note 1
Note
1. Thermal resistance is determined under RF operating conditions.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 0.2 mA
65
−
−
V
VGSth
gate-source threshold voltage
VDS = 10 V; ID = 20 mA
4
−
5
V
IDSS
drain-source leakage current
VGS = 0; VDS = 26 V
−
−
1.5
µA
IDSX
on-state drain current
VGS = VGSth + 9 V; VDS = 10 V
2.8
−
−
A
IGSS
gate leakage current
VGS = ±15 V; VDS = 0
−
−
40
nA
gfs
forward transconductance
VDS = 10 V; ID = 0.75 A
−
0.5
−
S
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 0.75 A
−
1.2
−
Ω
Cis
input capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
−
13
−
pF
Cos
output capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
−
11
−
pF
Crs
feedback capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
−
0.5
−
pF
2003 Feb 10
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1822-10
APPLICATION INFORMATION 2.2 GHz
RF performance in a common source class-AB circuit. Th = 25 °C; Rth mb-h = 0.4 K/W; unless otherwise specified.
MODE OF OPERATION
CW, class-AB (2-tone)
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
f1 = 2200; f2 = 2200.1
26
85
10 (PEP)
>11
>30
≤−26
Ruggedness in class-AB operation
The BLF1822-10 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: VDS = 26 V; f = 2200 MHz at rated load power.
MGW642
102
handbook, halfpage
C
(pF)
Cos
Gp
(dB)
Cis
10
10
MGW643
15
handbook, halfpage
60
ηD
(%)
Gp
40
ηD
Crs
1
10 −1
0
10
20
VDS (V)
0
30
VGS = 0; f = 1 MHz.
Fig.2
20
5
4
8
12
PL (PEP) (W)
0
16
VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C;
f1 = 2000 MHz; f2 = 2000.1 MHz.
Input, output and feedback capacitance as
functions of drain-source voltage; typical
values.
2003 Feb 10
0
Fig.3
4
Power gain and efficiency as functions of
peak envelope load power; typical values.
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1822-10
MGW644
MGW645
15
0
handbook, halfpage
handbook, halfpage
d im
(dBc)
Gp
(dB)
60
ηD
(%)
Gp
−20
d3
40
10
ηD
d5
−40
d7
20
5
−60
−80
0
4
8
12
PL (PEP) (W)
0
16
0
4
8
VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C;
f1 = 2000 MHz; f2 = 2000.1 MHz.
VDS = 26 V; IDQ = 85 mA;
f1 = 2200 MHz; f2 = 2200.1 MHz.
Fig.4
Fig.5
Intermodulation distortion as a function of
peak envelope load power; typical values.
12
PL (PEP) (W)
0
16
Power gain and efficiency as functions of
peak envelope load power; typical values.
MGW646
MGW647
0
0
handbook, halfpage
handbook, halfpage
d im
(dBc)
d3
(dBc)
−20
d3
−20
d5
−40
d7
−40
(1)
(2)
(3)
−60
−80
0
4
8
12
PL (PEP) (W)
−60
16
(1) IDQ = 115 mA.
Intermodulation distortion as a function of
peak envelope load power; typical values.
2003 Feb 10
4
8
12
PL (PEP) (W)
16
VDS = 26 V; Th ≤ 25 °C;
f1 = 2200 MHz; f2 = 2200.1 MHz.
VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C;
f1 = 2200 MHz; f2 = 2200.1 MHz.
Fig.6
0
Fig.7
5
(2) IDQ = 55 mA.
(3) IDQ = 85 mA.
Intermodulation distortion as a function of
peak envelope load power; typical values.
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1822-10
MGW648
MGW649
8
6
handbook, halfpage
handbook, halfpage
ZL
Zi
(Ω)
(Ω)
4
RL
6
2
4
0
xi
XL
−2
2
−4
ri
0
1.8
1.9
2.0
2.1
−6
1.8
2.2
1.9
2.0
2.1
f (GHz)
2.2
f (GHz)
VDS = 26 V; IDQ = 85 mA; PL = 10 W; Th ≤ 25 °C.
Impedance measured at reference planes.
VDS = 26 V; IDQ = 85 mA; PL = 10 W; Th ≤ 25 °C.
Impedance measured at reference planes.
Fig.8
Fig.9
Input impedance as a function of frequency
(series components); typical values.
Load impedance as a function of frequency
(series components); typical values.
VDD
handbook, full pagewidth
C18
C19
C20
C13
C14
C15
L10
C11
Vgate
C12
C6
C5
R1
50 Ω
input
L9
C1
L6
L1
L2
L3
L4
C3
C10
C8
C2
50 Ω
output
L7
L8
L5
C4
C7
C9
MGW650
Fig.10 Class-AB test circuit for 2.2 GHz.
2003 Feb 10
6
C16
C17
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1822-10
List of components (see Figs 10 and 11)
COMPONENT
DESCRIPTION
VALUE
C1, C2, C10, C11
multilayer ceramic chip capacitor; note 1 6.8 pF
C3, C4, C7, C9
Tekelec variable capacitor; type 37271
DIMENSIONS
CATALOGUE NO.
0.6 to 4.5 pF
C5
multilayer ceramic chip capacitor; note 1 2.4 pF
C6, C18
tantalum SMD capacitor
C8
multilayer ceramic chip capacitor; note 1 1.5 pF
C12, C20
multilayer ceramic chip capacitor; note 2 1 nF
C13
multilayer ceramic chip capacitor; note 1 10 pF
C14
multilayer ceramic chip capacitor; note 1 51 pF
C15
multilayer ceramic chip capacitor; note 1 120 pF
C16
multilayer ceramic chip capacitor
100 nF
2222 581 16641
C17
electrolytic capacitor
47 µF; 35 V
2222 036 90094
C19
electrolytic capacitor
100 µF; 63 V
2222 037 58101
L1, L8
stripline; note 3
50 Ω
4 × 1.5 mm
L2
stripline; note 3
50 Ω
7 × 1.5 mm
L3
stripline; note 3
58.1 Ω
12 × 1.2 mm
L4
stripline; note 3
11.3 Ω
9 × 10 mm
L5
stripline; note 3
11.3 Ω
11.5 × 10 mm
L6
stripline; note 3
52.8 Ω
11 × 1.4 mm
L7
stripline; note 3
50 Ω
5.5 × 1.5 mm
L9
stripline; note 3
64.7 Ω
38 × 1 mm
L10
2 turns enamelled 0.5 mm copper wire
R1
metal film resistor
10 µF; 35 V
int. dia. = 3 mm;
length = 3 mm
390 Ω; 0.6 W
2322 156 11009
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 100B or capacitor of same quality.
3. The striplines are on a double copper-clad printed-circuit board with Rogers 5880 dielectric (εr = 2.2);
thickness 0.51 mm.
2003 Feb 10
7
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1822-10
handbook, full pagewidth
C18
C13
C14
C15
C16
C20
C17
C19
VDD
L10
C11 C12
C6
Vgate
C5
R3
C1
C8
C2
C10
C9
C3
C7
C4
BLF1822-10 2.2 GHz input
BLF1822-10 2.2 GHz output
60
60
BLF1822-10 2.2 GHz input
BLF1822-10 2.2 GHz output
33
33
MGW651
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr = 2.2), thickness 0.51 mm.
The other side is unetched and serves as a ground plane.
Fig.11 Component layout for 2.2 GHz class-AB test circuit.
2003 Feb 10
8
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1822-10
APPLICATION INFORMATION 960 MHz
RF performance in a common source class-AB circuit. Th = 25 °C; Rth mb-h = 0.4 K/W; unless otherwise specified.
f
(MHz)
MODE OF OPERATION
f1 = 960; f2 = 960.1
CW, class-AB (2-tone)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
26
85
10 (PEP)
typ. 18.5
typ. 39
typ. −33
Ruggedness in class-AB operation
The BLF1822-10 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: VDS = 26 V; f = 960 MHz at rated load power.
MGW652
24
p
(dB)
20
MGW653
60
0
ηD
handbook,
G halfpage
handbook, halfpage
d im
(dBc)
(%)
50
Gp
−20
16
ηD
d3
40
12
30
8
20
d5
d7
−40
−60
10
4
0
0
4
8
12
−80
0
16
20
PL (PEP) (W)
0
4
8
12
16
20
PL (PEP) (W)
VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C;
f1 = 960 MHz; f2 = 960.1 MHz.
VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C;
f1 = 960 MHz; f2 = 960.1 MHz.
Fig.12 Power gain and efficiency as functions of
peak envelope load power; typical values.
Fig.13 Intermodulation distortion as a function of
peak envelope load power; typical values.
2003 Feb 10
9
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1822-10
MGW654
MGW655
4
10
handbook, halfpage
handbook, halfpage
Zi
(Ω)
ZL
(Ω)
ri
8
0
RL
6
XL
−4
4
xi
−8
2
−12
800
900
1000
1100
0
800
1200
f (MHz)
900
1000
1100
1200
f (MHz)
VDS = 26 V; IDQ = 85 mA; PL = 10 W; Th ≤ 25 °C.
Impedance measured at reference planes.
VDS = 26 V; IDQ = 85 mA; PL = 10 W; Th ≤ 25 °C.
Impedance measured at reference planes.
Fig.14 Input impedance as a function of frequency
(series components); typical values.
Fig.15 Load impedance as a function of frequency
(series components); typical values.
VDD
handbook, full pagewidth
R2
Vgate
C15
C14
C13
C9
C10
C11
L12
C19
C18
C17
R1
L11
C16
L4
50 Ω
output
L10
50 Ω
input
C1
C8
L8
L3
L1
L2
L9
L7
C2
C5
L5
C6
C7
L6
C4
MGW656
C3
Fig.16 Class-AB test circuit for 960 MHz.
2003 Feb 10
10
C12
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1822-10
List of components (see Figs 16 and 17)
COMPONENT
DESCRIPTION
VALUE
C1
multilayer ceramic chip capacitor; note 1 82 pF
C2, C6
Tekelec variable capacitor; type 27291
DIMENSIONS
CATALOGUE NO.
0.8 to 8 pF
C3
multilayer ceramic chip capacitor; note 1 0.3 pF
C4, C5
Tekelec variable capacitor; type 27271
C7
multilayer ceramic chip capacitor; note 1 2.1 pF
C8
multilayer ceramic chip capacitor; note 2 56 pF
C19, C14, C19
multilayer ceramic chip capacitor
100 pF
size 0805
C10, C17
multilayer ceramic chip capacitor
1 nF
size 0805
0.6 to 4.5 pF
C12, C14, C19
tantalum SMD capacitor
6.8 µF
C13
multilayer ceramic chip capacitor
100 nF
2222 581 16641
C15
electrolytic capacitor
100 µF; 63 V
2222 037 58101
C16
multilayer ceramic chip capacitor; note 1 68 pF
L1
stripline; note 3
50 Ω
7.5 × 1.57 mm
L2
stripline; note 3
50 Ω
34.5 × 1.57 mm
L3
stripline; note 3
19.2 Ω
7 × 6 mm
L4
stripline; note 3
50 Ω
11 × 1.57 mm
L5
stripline; note 3
50 Ω
9.5 × 1.57 mm
L6
stripline; note 3
24.5 Ω
2.2 × 4.4 mm
L7
stripline; note 3
19.2 Ω
13 × 6 mm
L8
stripline; note 3
50 Ω
27.5 × 1.57 mm
L9
stripline; note 3
50 Ω
8 × 1.57 mm
L10
stripline; note 2
64.4 Ω
6.4 × 1 mm
L11
stripline; note 3
64.4 Ω
38 × 1 mm
L12
3 turns enamelled 0.5 mm copper wire
R1
resistor
51 Ω, 0.25 W
size 1206
R2
resistor
1 kΩ, 0.25 W
size 1206
int. dia. = 4 mm
length = 5 mm
Notes
1. American Technical Ceramics type 500A or capacitor of same quality.
2. American Technical Ceramics type 100B or capacitor of same quality.
3. The striplines are on a double copper-clad printed-circuit board with Rogers 4350 dielectric (εr = 3.81); thickness
0.76 mm.
2003 Feb 10
11
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1822-10
handbook, full pagewidth
C14
C19
C17
C13
C18 R2
C15
Vgate
C12
VDD
C11
L12
R1
C9 C10
C16
C7
C1
C2
C5
C8
C6
C3
C4
BLF1822-10 960 MHz input
BLF1822-10 960 MHz output
60
60
BLF1822-10 960 MHz input
BLF1822-10 960 MHz output
50
50
MGW657
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Rogers 4350 dielectric (εr = 3.81), thickness 0.76 mm.
The other side is unetched and serves as a ground plane.
Fig.17 Component layout for 960 MHz class-AB test circuit.
2003 Feb 10
12
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1822-10
PACKAGE OUTLINE
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT467C
D
A
F
3
D1
U1
B
q
c
C
1
E1
H
U2
E
A
w1 M A M B M
p
2
Q
w2 M C M
b
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
E
E1
F
H
p
Q
q
U1
U2
w1
w2
mm
4.67
3.94
5.59
5.33
0.15
0.10
9.25
9.04
9.27
9.02
5.92
5.77
5.97
5.72
1.65
1.40
18.54
17.02
3.43
3.18
2.21
1.96
14.27
20.45
20.19
5.97
5.72
0.25
0.51
inch
0.184 0.220 0.006
0.155 0.210 0.004
0.364 0.365
0.356 0.355
0.233
0.227
0.235 0.065
0.225 0.055
0.73
0.67
0.135 0.087
0.805 0.235
0.562
0.010 0.020
0.125 0.077
0.795 0.225
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
99-12-06
99-12-28
SOT467C
2003 Feb 10
EUROPEAN
PROJECTION
13
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1822-10
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Feb 10
14
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1822-10
NOTES
2003 Feb 10
15
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA75
© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/04/pp16
Date of release: 2003
Feb 10
Document order number:
9397 750 10914
Similar pages