INCHANGE Semiconductor Schottky Barrier Rectifier MBR40100PT FEATURES ·Plastic material used carriers Unerwriter Laboratory ·Metal silicon rectifier, majonty carrier conduction ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Surge Capability,High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in low voltage ,high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 100 V RMS Reverse Voltag 70 V IF(AV) Average Rectified Forward Current 40 A IFSM Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 330 A IRRM Peak Repetitive Reverse Surge Current (20μs, 1.0kHz) 1.0 A Junction Temperature 150 ℃ -65~175 ℃ 1,000 V/μs VRRM VRWM VR VR(RMS) TJ PARAMETER Tstg Storage Temperature Range dv/dt Voltage Rate of Change (Rated VR) isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor Schottky Barrier Rectifier MBR40100PT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX UNIT 1.2 ℃/W MAX UNIT ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL PARAMETER VF Maximum Instantaneous Forward Voltage IR Maximum Instantaneous Reverse Current isc website：www.iscsemi.com CONDITIONS IF= 20A ; Tc= 25℃ 0.84 IF= 20A ; Tc= 125℃ 0.74 VR= VRWM;Tc= 25℃ 0.5 VR= VRWM;Tc= 125℃ 10 2 V mA isc & iscsemi is registered trademark