IXYS IXFH40N50Q2 Hiperfet power mosfet Datasheet

HiPerFETTM
Power MOSFETs
IXFH40N50Q2
VDSS
= 500 V
=
40 A
ID25
RDS(on) = 0.16 Ω
N-Channel Enhancement Mode
Avalanche Rated, Low Qg
Low Rg, High dv/dt, Low trr
trr ≤ 250 ns
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
500
500
V
V
VGS
VGSM
Continuous
Transient
±30
±40
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
40
160
40
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
50
2.5
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
20
V/ns
PD
TC = 25°C
560
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
Applications
300
°C
z
TJ
TJM
Tstg
TL
TO-247 AD (IXFH)
(TAB)
Features
z
z
z
z
1.6 mm (0.063 in) from case for 10 s
z
z
z
Md
Mounting torque
1.13/10 Nm/lb.in.
z
Weight
6
g
z
z
Double metal process for low gate
resistance
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
Low RDS (on), low Qg
Avalanche energy and current rated
Fast intrinsic rectifier
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Advantages
z
z
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 4 mA
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
500
2.5
TJ = 25°C
TJ = 125°C
z
Easy to mount
Space savings
High power density
V
5.0
V
±200
nA
25
1
µA
mA
0.16
Ω
DS98970C(04/04)
IXFH40N50Q2
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 0.5 • ID25, pulse test
15
28
S
4200
pF
680
pF
170
pF
TO-247 AD (IXFH) Outline
1
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
td(on)
17
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
13
ns
td(off)
RG = 2 Ω (External),
42
ns
8
ns
110
nC
25
nC
50
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
0.22
RthCK
0.25
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
VSD
t rr
QRM
IRM
2
Dim.
K/W
K/W
3
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Millimeter
Min.
Max.
Inches
Min.
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
∅P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
R
S
4.32
6.15
5.49
BSC
.170
242
.216
BSC
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
40
A
Repetitive; pulse width limited by TJM
160
A
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
250
ns
µC
A
1
9
IF = 25A -di/dt = 100 A/µs, VR = 100 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXFH40N50Q2
Fig. 1. Output Characteris tics
Fig. 2. Extended Output Characteris tics
@ 25º C
@ 25º C
40
90
VGS = 10V
35
8V
70
6V
25
20
I D - Amperes
I D - Amperes
30
VGS = 10V
80
8V
7V
5.5V
15
5V
10
60
7V
50
40
6V
30
20
4.5V
5
10
0
5V
0
0
1
2
3
4
5
6
7
0
3
6
9
Fig. 3. Output Characteris tics
@ 125ºC
18
21
24
27
30
3.1
VGS = 10V
2.8
8V
7V
30
6V
R D S ( o n ) - Normalized
35
I D - Amperes
15
Fig. 4. RDS(on) Norm alize d to 0.5 ID25
Value vs. Junction Te m pe rature
40
5.5V
25
20
5V
15
10
4.5V
5
VGS = 10V
2.5
2.2
1.9
I D = 40A
1.6
I D = 20A
1.3
1
0.7
0
0.4
0
2
4
6
8
10
12
V D S - Volts
14
16
-50
0.5 ID25 Value vs. ID
3.1
2.8
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to
Fig. 6. Drain Curre nt vs. Case
Tem perature
45
40
VGS = 10V
TJ = 125ºC
2.5
35
I D - Amperes
R D S ( o n ) - Normalized
12
V D S - Volts
V D S - Volts
2.2
1.9
1.6
1.3
TJ = 25ºC
30
25
20
15
10
1
5
0.7
0
0
10
20
30
40
50
60
I D - Amperes
© 2004 IXYS All rights reserved
70
80
90
100
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXFH40N50Q2
Fig. 8. Trans conductance
50
50
45
45
40
40
TJ = -40ºC
35
35
25ºC
125ºC
g f s - Siemens
I D - Amperes
Fig. 7. Input Adm ittance
30
25
20
TJ = 125ºC
15
30
25
20
15
25ºC
-40ºC
10
10
5
5
0
0
3
3.5
4
4.5
5
5.5
6
0
6.5
5
10
15
V G S - Volts
30
35
120
10
110
9
VDS = 250V
100
8
I D = 20A
7
I G = 10mA
VG S - Volts
80
70
60
50
TJ = 125ºC
45
50
55
6
5
4
3
30
2
TJ = 25ºC
20
1
10
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
0
V S D - Volts
10
20
30
40
50
60
70
80
90
100 110
Q G - nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Ope rating Area
Fig. 11. Capacitance
10000
1000
f = 1MHz
TJ = 150ºC
TC = 25ºC
C iss
R DS(on) Limit
I D - Amperes
Capacitance - picoFarads
40
Fig. 10. Gate Charge
90
I S - Amperes
25
I D - Amperes
Fig. 9. Source Current vs.
Source -To-Drain Voltage
40
20
1000
C oss
100
25µs
100µs
1ms
10
10ms
DC
C rss
100
1
0
5
10
15
20
25
30
35
40
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
V D S - Volts
1000
IXFH40N50Q2
Fig. 13. Maximum Transient Thermal Resistance
R ( t h ) J C - ºC / W
1.00
0.10
0.01
0.1
1
10
100
Pulse Width - milliseconds
© 2004 IXYS All rights reserved
1000
10000
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