Etron EM564166BC-70E 256k x 16 low power sram Datasheet

EtronTech
EM564166
256K x 16 Low Power SRAM
Preliminary, Rev 1.0
Features
Pin Configuration
• Single power supply voltage of 2.3V to 3.6V
• Power down features using CE#
48-Ball BGA (CSP), Top View
• Low power dissipation
• Data retention supply voltage: 1.0V to 3.6V
• Direct TTL compatibility for all input and output
• Wide operating temperature range: -40°C to 85°C
• Standby current @ VDD = 3.6 V
1
2
3
4
5
6
A
LB#
OE#
A0
A1
A2
NC
B
DQ8
UB#
A3
A4
CE#
DQ0
C
DQ9
DQ10
A5
A6
DQ1
DQ2
D
GND
DQ11
A17
A7
DQ3
VDD
E
VDD
DQ12
NC
A16
DQ4
GND
F
DQ14
DQ13
A14
A15
DQ5
DQ6
G
DQ15
NC
A12
A13
WE#
DQ7
H
NC
A8
A9
A10
A11
NC
05/2001
IDDS2
Typical
Maximum
EM564166BC-70/85
1 µA
10 µA
EM564166BC-70E/85E
5 µA
80 µA
Ordering Information
Part Number
Speed
IDDS2
Package
EM564166BC-70
70 ns
10 µA
6x8 BGA
EM564166BC-85
85 ns
10 µA
6x8 BGA
EM564166BC-70E
70 ns
80 µA
6x8 BGA
EM564166BC-85E
85 ns
80 µA
6x8 BGA
Pin Description
Symbol
Function
A0 - A17
DQ0 - DQ15
CE#
OE#
WE#
LB#, UB#
GND
VDD
NC
Address Inputs
Data Inputs / Outputs
Chip Enable Inputs
Output Enable
Read / Write Control Input
Data Byte Control Inputs
Ground
Power Supply
No Connection
Overview
The EM564166 is a 4,194,304-bit SRAM organized as 262,144 words by 16 bits. It is designed with advanced
CMOS technology. This Device operates from a single 2.3V to 3.6V power supply. Advanced circuit
technology provides both high speed and low power. It is automatically placed in low-power mode when chip
enable (CE#) is asserted high. There are two control inputs. CE# are used to select the device and for data
retention control, and output enable (OE#) provides fast memory access. Data byte control pin (LB#,UB#)
provides lower and upper byte access. This device is well suited to various microprocessor system applications
where high speed, low power and battery backup are required. And, with a guaranteed operating range from 40°C to 85°C, the EM564166 can be used in environments exhibiting extreme temperature conditions.
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: (886)-3-5782345
FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.
EtronTech
EM564166
Block Diagram
A0
VDD
MEMORY
CELL ARRAY
2,048X128X16
(4,194,304)
GND
A17
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
SENSE AMP
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
COLUMN ADDRESS
DECODER
WE#
UB#
LB#
OE#
CE#
POWER DOWN
CIRCUIT
Preliminary
2
Rev 1.0
May 2001
EtronTech
EM564166
Operating Mode
Mode
CE#
Read
Write
L
L
OE#
WE#
L
X
LB#
UB#
DQ0~DQ7
DQ8~DQ15
L
L
DOUT
DOUT
H
L
High-Z
DOUT
L
H
DOUT
High-Z
L
L
DIN
DIN
H
L
High-Z
DIN
L
H
DIN
High-Z
High-Z
High-Z
High-Z
High-Z
H
L
L
H
H
X
X
L
X
X
H
H
H
X
X
X
X
X
X
X
X
X
Output Deselect
Standby
Note: X = don't care. H=logic high. L=logic low.
Absolute Maximum Ratings
Supply voltage, VDD
-0.3 to +4.6V
Input voltages, VIN
-0.3 to +4.6V
Input and output voltages, VI/O
-0.5 to VDD
+0.5V
Operating temperature, TOPR
-40 to +85°C
Storage temperature, TSTRG
-55 to +150°C
Soldering Temperature (10s), TSOLDER
240°C
Power dissipation, PD
0.6 W
DC Recommended Operating Conditions (Ta=-40°C to 85°C)
Symbol
Parameter
Min
Typ
Max
Unit
VDD
Power Supply Voltage
2.3
−
3.6
V
VIH
Input High Voltage
2.2
−
VIL
(2)
Input Low Voltage
-0.3
VDR
Data Retention Supply Voltage
Note:
(1) Overshoot : VDD +2.0V in case of pulse width ≤ 20ns
(2) Undershoot : -2.0V in case of pulse width ≤ 20ns
Preliminary
3
1.0
VDD + 0.3
(1)
V
−
0.6
V
−
3.6
V
Rev 1.0
May 2001
EtronTech
EM564166
DC Characteristics (Ta = -40°C to 85°C, VDD = 2.3V to 3.6V)
Parameter
Symbol
Input low current
IIL
Test Conditions
IIN = 0V to VDD
Min
Typ*
Max Unit
-1
−
1
µA
Output low
voltage
VOL
IOL = 2.1 mA
-
−
0.4
V
Output high
voltage
VOH
IOH = -1.0 mA
VDD 0.15
−
−
V
VDD = 3.6 V
−
15
25
VDD = 2.7 V
−
10
15
VDD = 2.3 V
−
7
12
−
−
5
−
−
0.5
VDD = 3.6 V
−
1
10
VDD = 2.7 V
VDD = 2.3 V
−
0.8
5
−
0.5
3
-70E/85E
VDD = 3.6 V
−
5
80
IDD1
Cycle time
= min
CE# = VIL and
IOUT = 0mA
Operating current
Other Input = VIH / VIL
IDD2
IDDS1
Standby current
IDDS2
mA
Cycle time = 1µs
CE# = VIH
CE# ≥ VDD - 0.2V
-70/85
mA
µA
Notes:
* Typical value are measured at Ta = 25°C.
Capacitance (Ta = 25°C; f = 1 MHz)
Parameter
Input capacitance
Symbol
Min
Typ
Max
Unit
Test Conditions
CIN
−
−
10
pF
VIN = GND
COUT
10
pF
VOUT = GND
−
−
Notes: This parameter is periodically sampled and is not 100% tested.
Output capacitance
Preliminary
4
Rev 1.0
May 2001
EtronTech
EM564166
AC Characteristics and Operating Conditions (Ta = -40°C to 85°C, VDD = 2.3V to 3.6V)
Read Cycle
EM564166
Symbol
-85
Parameter
-70
Unit
Min Max Min Max
tRC
Read cycle time
85
−
70
−
tAA
Address access time
−
85
−
70
Chip Enable (CE#) Access Time
−
85
−
70
tOE
Output enable access time
−
45
−
35
tBA
Data Byte Control Access Time
−
45
−
35
tLZ
Chip Enable Low to Output in Low-Z
10
−
10
−
tOLZ
Output enable Low to Output in Low-Z
3
−
3
−
tBLZ
Data Byte Control Low to Output in Low-Z
5
−
5
−
tHZ
Chip Enable High to Output in High-Z
−
35
−
25
tOHZ
Output Enable High to Output in High-Z
−
35
−
25
tBHZ
Data Byte Control High to Output in High-Z
−
35
−
25
tOH
Output Data Hold Time
10
−
10
−
tCO1
ns
Write Cycle
EM564166
Symbol
-85
Parameter
-70
Unit
Min Max Min Max
tWC
Write cycle time
85
−
70
−
tWP
Write pulse width
55
−
55
−
tCW
Chip Enable to end of write
70
−
60
−
tBW
Data Byte Control to end of Write
70
−
60
−
tAS
Address setup time
0
−
0
−
tWR
Write Recovery time
0
−
0
−
tWHZ
WE# Low to Output in High-Z
−
35
−
30
tOW
WE# High to Output in Low-Z
5
−
5
−
tDS
Data Setup Time
35
−
30
−
tDH
Data Hold Time
0
−
0
−
ns
AC Test Condition
• Output load : 50pF + one TTL gate
• Input pulse level : 0.4V, 2.4V
• Timing measurements : 0.5 x VDD
• tR, tF : 5ns
Preliminary
5
Rev 1.0
May 2001
EtronTech
EM564166
Read Cycle
(See Note 1)
t RC
Ad d r e ss
t OH
t AA
t CO1
C E#
t HZ
t OE
O E#
t OHZ
t BA
U B# , L B#
t BLZ
t BHZ
t OLZ
t LZ
DO U T
Preliminary
VALID DATA OUT
6
Rev 1.0
May 2001
EtronTech
EM564166
Write Cycle1
(WE# Controlled)(See Note 4)
tW C
Address
t AS
tW P
tW R
W E#
t CW
CE#
t BW
UB# , LB#
t W HZ
D O UT
t OW
(See Note2)
(See Note3)
t DS
D IN
Preliminary
(See Note 5)
t DH
VALID DATA IN
7
Rev 1.0
(See Note 5)
May 2001
EtronTech
EM564166
Write Cycle 2
(CE# Controlled)(See Note 4)
tW C
Address
t AS
tW P
tW R
W E#
t CW
CE#
t BW
UB# , LB#
t BLZ
t W HZ
D O UT
t LZ
t DS
D IN
Preliminary
(See Note 5)
t DH
VALID DATA IN
8
Rev 1.0
May 2001
EtronTech
EM564166
Write Cycle3
(UB#, LB# Controlled)(See Note 4)
tW C
Address
t AS
tW P
tW R
W E#
t CW
CE#
t BW
UB# , LB#
t BLZ
t W HZ
D O UT
t LZ
t DS
D IN
(See Note 5)
t DH
VALID DATA IN
Note:
1.
2.
3.
4.
5.
WE# remains HIGH for the read cycle.
If CE# goes LOW with or after WE# goes LOW, the outputs will remain at high impedance.
If CE# goes HIGH coincident with or before WE# goes HIGH, the outputs will remain at high impedance.
If OE# is HIGH during the write cycle, the outputs will remain at high impedance.
Because I/O signals may be in the output state at this time, input signals of reverse polarity must not be
applied.
Preliminary
9
Rev 1.0
May 2001
EtronTech
EM564166
Data Retention Characteristics (Ta = -40°C to 85°C)
Symbol
Parameter
VDR
Data Retention Supply
Voltage
IDR
Data Retention Current
CE# ≥ VDD - 0.2V,
VIN ≥ VDD - 0.2V or VIN ≤ 0.2V
VDD = 1.0V, CE# ≥ VDD - 0.2V,
VIN ≥ VDD - 0.2V or VIN ≤ 0.2V
tSDR
Chip Deselect to Data Retention Mode Time
tRDR
Recovery Time
Min
Typ
Max
Unit
1.0
−
3.6
V
−
0.5
3.5
µA
0
−
−
ns
tRC
−
−
ns
CE# Controlled Data Retention Mode
t SDR
Data Retention Mode
t RDR
V DD
2.7V
2.2V
V DR
Note 1
CE#
GND
Note:
1. CE# ≥ VDD – 0.2V or UB# = LB# ≥ VDD – 0.2V
Preliminary
10
Rev 1.0
May 2001
EtronTech
EM564166
Package Diagrams
48-Ball (6mm x 8mm) BGA
Units in mm
TOP VIEW
BOTTOM VIEW
2
C
PIN 1 CORNER
0.25 S
C
A
0.30
PIN 1 CORNER
1
0.10 S
3
4
5
6
6
5
4
B
0.05(48X)
3
2
1
-B0.75
3.75
-A0.20(4X)
0.10
-C-
Preliminary
SEATING PLANE
11
Rev 1.0
May 2001
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