Diodes DMN6066SSD 60v dual n-channel enhancement mode mosfet Datasheet

A Product Line of
Diodes Incorporated
DMN6066SSD
ADVANCE INFORMATION
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
Features and Benefits
•
ID
RDS(on)
TA = 25°C
66mΩ @ VGS= 10V
4.4A
97mΩ @ VGS= 4.5V
3.6A
60V
Low on-resistance
•
Fast switching speed
•
“Green” component and RoHS compliant (Note 1)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
•
Case: SO-8
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
•
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminals Connections: See diagram below
•
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.074 grams (approximate)
•
Motor control
•
Backlighting
•
DC-DC Converters
•
Power management functions
SO-8
D1
G1
D2
G2
S1
Top View
Ordering Information
Product
DMN6066SSD-13
Note:
Top View
S2
Equivalent Circuit
(Note 1)
Marking
N6066SD
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2,500
1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about
Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
N6066SD
YY
WW
DMN6066SSD
Document Number DS32109 Rev 1 - 2
= Manufacturer’s Marking
N6066SD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-53)
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ADVANCE INFORMATION
DMN6066SSD
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
VGS = 10V
Pulsed Drain current
VGS= 10V
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 2)
(Note 4)
TA = 70°C (Note 4)
(Note 3)
(Note 5)
(Note 4)
(Note 5)
Symbol
VDSS
VGS
ID
IDM
IS
ISM
Value
60
±20
4.4
3.5
3.3
17.0
3.2
17.0
Unit
V
V
Value
1.25
10
1.8
14.3
2.14
17.2
100
70
58
55
-55 to 150
Unit
A
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
(Notes 3 & 6)
Power dissipation
Linear derating factor
(Notes 3 & 7)
PD
(Notes 4 & 6)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
(Notes 3 & 6)
(Notes 3 & 7)
(Notes 4 & 6)
(Notes 6 & 8)
RθJA
RθJL
TJ, TSTG
W
mW/°C
°C/W
°C
2. AEC-Q101 VGS maximum is ±16V.
3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
4. Same as note (3), except the device is measured at t ≤ 10 sec.
5. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
6. For a dual device with one active die.
7. For a device with two active die running at equal power.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
DMN6066SSD
Document Number DS32109 Rev 1 - 2
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Thermal Characteristics
RDS(on) Limited
Max Power Dissipation (W)
ID Drain Current (A)
10
1
100m
DC
1s
100ms
10m
1m
100m
10ms
Single Pulse
T amb=25°C
1ms
100µs
One active die
1
10
VDS Drain-Source Voltage (V)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Two active die
One active die
0
20
Single Pulse
D=0.05
D=0.1
1
10
100 120 140 160
100
1k
Single Pulse
T amb=25°C
One active die
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Document Number DS32109 Rev 1 - 2
80
100
Pulse Width (s)
DMN6066SSD
60
Derating Curve
Maximum Power (W)
110
T amb=25°C
100
One
active die
90
80
70
D=0.5
60
50
40
D=0.2
30
20
10
0
100µ 1m 10m 100m
40
Temperature (°C)
Safe Operating Area
Thermal Resistance (°C/W)
ADVANCE INFORMATION
DMN6066SSD
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Pulse Power Dissipation
March 2010
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ADVANCE INFORMATION
DMN6066SSD
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
60
⎯
⎯
⎯
⎯
⎯
⎯
0.5
±100
V
μA
nA
ID = 250μA, VGS= 0V
VDS= 60V, VGS= 0V
VGS= ±20V, VDS= 0V
VGS(th)
1.0
RDS (ON)
⎯
Forward Transconductance (Notes 9 & 10)
Diode Forward Voltage (Note 9)
Reverse recovery time (Note 10)
Reverse recovery charge (Note 10)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 11)
Total Gate Charge (Note 11)
Gate-Source Charge (Note 11)
Gate-Drain Charge (Note 11)
Turn-On Delay Time (Note 11)
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)
gfs
VSD
trr
Qrr
⎯
⎯
S
V
ns
nC
ID= 250μA, VDS= VGS
VGS= 10V, ID= 4.5A
VGS= 4.5V, ID= 3.5A
VDS= 15V, ID= 6A
IS= 4.5A, VGS= 0V
⎯
3.0
0.066
0.097
⎯
1.15
⎯
⎯
V
Static Drain-Source On-Resistance (Note 9)
⎯
0.048
0.068
19.2
0.89
22.2
16.9
Ciss
Coss
Crss
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
502
45.7
27.1
5.4
10.3
1.7
3.2
2.7
2.4
14.7
5.4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
Notes:
Ω
Test Condition
IS= 1.9A, di/dt= 100A/μs
VDS= 30V, VGS= 0V
f= 1MHz
VGS= 4.5V
VGS= 10V
VDS= 30V
ID= 4.5A
VDD= 30V, VGS= 10V
ID= 1A, RG ≅ 6.0Ω
9. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.
DMN6066SSD
Document Number DS32109 Rev 1 - 2
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Typical Characteristics
10V
T = 150°C
4.5V
10
ID Drain Current (A)
ID Drain Current (A)
T = 25°C
4V
3.5V
1
0.1
3V
VGS
0.01
3.5V
1
3V
2.5V
0.1
VGS
2V
1
10
0.1
T = 150°C
T = 25°C
0.01
1E-3
2
3
4
5
VGS Gate-Source Voltage (V)
Typical Transfer Characteristics
Normalised RDS(on) and VGS(th)
1
1
10
Output Characteristics
VDS = 10V
0.1
1
VDS Drain-Source Voltage (V)
Output Characteristics
2.0
VGS = 10V
1.8
ID = 12A
1.6
RDS(on)
1.4
1.2
1.0
0.8
VGS = VDS
0.6
ID = 250uA
0.4
-50
0
VGS(th)
50
100
150
Tj Junction Temperature (°C)
Normalised Curves v Temperature
100
3V
VGS
10
3.5V
1
4V
4.5V
0.1
10V
T = 25°C
0.01
0.01
0.1
1
10
ID Drain Current (A)
On-Resistance v Drain Current
DMN6066SSD
Document Number DS32109 Rev 1 - 2
ISD Reverse Drain Current (A)
ID Drain Current (A)
4.5V
4V
10
VDS Drain-Source Voltage (V)
10
10V
0.01
0.1
RDS(on) Drain-Source On-Resistance (Ω)
ADVANCE INFORMATION
DMN6066SSD
10
T = 150°C
1
T = 25°C
0.1
Vgs = 0V
0.01
0.2
0.4
0.6
0.8
1.0
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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DMN6066SSD
ADVANCE INFORMATION
Typical Characteristics - continued
600
f = 1MHz
CISS
400
COSS
CRSS
200
0
0.1
1
10
VGS Gate-Source Voltage (V)
C Capacitance (pF)
10
VGS = 0V
8
6
4
VDS = 30V
2
0
ID = 4.5A
0
2
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
4
6
8
10
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Test Circuits
Current
regulator
QG
50k
12V
VG
Q GS
Same as
D.U.T
Q GD
V DS
IG
D.U.T
ID
V GS
Charge
Basic gate charge waveform
Gate charge test circuit
V DS
90%
RD
V GS
V DS
RG
VDD
10%
V GS
td(on)
tr
t(on)
td(off)
tr
t(on)
Switching time waveforms
DMN6066SSD
Document Number DS32109 Rev 1 - 2
Switching time test circuit
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ADVANCE INFORMATION
DMN6066SSD
Package Outline Dimensions
θ
DIM
Inches
Millimeters
DIM
Inches
Min.
Millimeters
Max.
Max.
Min.
Max.
A
0.053
0.069
1.35
1.75
e
A1
0.004
0.010
0.10
0.25
b
0.013
0.020
0.33
0.51
D
0.189
0.197
4.80
5.00
c
0.008
0.010
0.19
0.25
H
0.228
0.244
5.80
6.20
θ
0°
8°
0°
8°
E
0.150
0.157
3.80
4.00
h
0.010
0.020
0.25
0.50
L
0.016
0.050
0.40
1.27
-
-
-
-
-
0.050 BSC
Min.
Max.
Min.
1.27 BSC
Suggested Pad Layout
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.27
0.050
mm
inches
DMN6066SSD
Document Number DS32109 Rev 1 - 2
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ADVANCE INFORMATION
DMN6066SSD
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A.
B.
Life support devices or systems are devices or systems which:
1.
are intended to implant into the body, or
2.
support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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Copyright © 2010, Diodes Incorporated
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DMN6066SSD
Document Number DS32109 Rev 1 - 2
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