Infineon MMBT2222A Npn silicon switching transistor low collector-emitter saturation voltage Datasheet

SMBT2222A/MMBT2222A
NPN Silicon Switching Transistor
• Low collector-emitter saturation voltage
2
3
• Complementary type: SMBT2907AW (PNP)
1
• Pb-free (RoHS compliant) package 1)
• Qualified according AEC Q101
Type
Marking
SMBT2222A/MMBT2222A s1P
Pin Configuration
1=B
2=E
Package
SOT23
3=C
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
40
Collector-base voltage
VCBO
75
Emitter-base voltage
VEBO
6
Collector current
IC
600
mA
Total power dissipation-
Ptot
330
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
Thermal Resistance
Parameter
Junction - soldering point 2)
Symbol
RthJS
Value
Unit
V
TS ≤ 77 °C
-65 ... 150
Value
≤ 220
Unit
K/W
1Pb-containing
2For
package may be available upon special request
calculation of RthJA please refer to Application Note Thermal Resistance
1
2007-04-19
SMBT2222A/MMBT2222A
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 40
V
IC = 10 mA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
75
-
-
V(BR)EBO
6
-
-
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
µA
I CBO
VCB = 60 V, IE = 0
-
-
0.01
VCB = 60 V, IE = 0 , TA = 150 °C
-
-
10
-
-
10
Emitter-base cutoff current
I EBO
nA
VEB = 3 V, IC = 0
DC current gain1)
-
h FE
IC = 100 µA, VCE = 10 V
35
-
-
IC = 1 mA, VCE = 10 V
50
-
-
IC = 10 mA, VCE = 10 V
75
-
-
IC = 150 mA, V CE = 1 V
50
-
-
IC = 150 mA, V CE = 10 V
100
-
300
IC = 500 mA, V CE = 10 V
40
-
-
Collector-emitter saturation voltage1)
V
VCEsat
IC = 150 mA, IB = 15 mA
-
-
0.3
IC = 500 mA, IB = 50 mA
-
-
1
IC = 150 mA, IB = 15 mA
0.6
-
1.2
IC = 500 mA, IB = 50 mA
-
-
2
Base emitter saturation voltage 1)
1Pulse
VBEsat
test: t < 300µs; D < 2%
2
2007-04-19
SMBT2222A/MMBT2222A
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
300
-
-
MHz
pF
AC Characteristics
Transition frequency
fT
IC = 20 mA, VCE = 20 V, f = 100 MHz
Collector-base capacitance
Ccb
-
2.5
5
Ceb
-
-
35
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance
h11e
kΩ
IC = 1 mA, VCE = 10 V, f = 1 kHz
2
-
8
IC = 10 mA, VCE = 10 V, f = 1 kHz
0.25
-
1.25
Open-circuit reverse voltage transf. ratio
10-4
h12e
IC = 1 mA, VCE = 10 V, f = 1 kHz
-
-
8
IC = 10 mA, VCE = 10 V, f = 1 kHz
-
-
4
Short-circuit forward current transf. ratio
h21e
-
IC = 1 mA, VCE = 10 V, f = 1 kHz
50
-
300
IC = 10 mA, VCE = 10 V, f = 1 kHz
75
-
375
Open-circuit output admittance
µS
h22e
IC = 1 mA, VCE = 10 V, f = 1 kHz
5
-
35
IC = 10 mA, VCE = 10 V, f = 1 kHz
Delay time
25
-
200
td
-
-
10
tr
-
-
25
Storage time
tstg
-
-
225
VCC = 30 V, IC = 150 mA, I B1 = IB2 = 15mA
Fall time
tf
-
-
60
VCC = 30 V, IC = 150 mA, I B1 = IB2 = 15mA
Noise figure
F
-
-
4
ns
VCC = 30 V, IC = 150 mA, I B1 = 15 mA,
VBE(off) = 0.5 V
Rise time
VCC = 30 V, IC = 150 mA, I B1 = 15 mA,
VBE(off) = 0.5 V
dB
IC = 100 µA, VCE = 10 V, f = 1 kHz,
∆ f = 200 Hz, RS = 1 kΩ
3
2007-04-19
SMBT2222A/MMBT2222A
Test circuit
Delay and rise time
30 V
200 Ω
Osc.
619 Ω
9.9 V
0
0.5 V
EHN00055
Storage and fall time
30 V
~100 µ s
200 Ω
< 5 ns
16.2 V
Osc.
1 kΩ
0
-13.8 V
~ 500 µ s
-3.0 V
EHN00056
Oscillograph: R > 100Ω, C < 12pF, t r < 5ns
4
2007-04-19
SMBT2222A/MMBT2222A
DC current gain hFE = ƒ(IC)
Saturation voltage IC = ƒ(VBEsat; V CEsat)
VCE = 10 V
h FE = 10
10 3
SMBT 2222/A
EHP00743
SMBT 2222/A
10 3
EHP00742
mA
h FE
ΙC
5
VCE
10 2
150 ˚C
VBE
5
25 ˚C
10 2
10 1
5
-50 ˚C
5
10 0
5
10 1
-1
10
10
0
10
1
2
10
ΙC
mA 10
0.2
0.4
0.6
1.0 V 1.2
0.8
Collector-base capacitance Ccb = ƒ(V CB)
Emitter-base capacitance Ceb = ƒ(VEB)
EHP00741
35
MHz
pF
CCB(CEB )
fT
SMBT 2222/A
0
VBE sat , VCE sat
Transition frequency fT = ƒ(IC)
VCE = 20 V
10 3
10 -1
3
2
25
20
10
2
CEB
15
5
10
2
5
CCB
10
1
10 0
5
10 1
5
10 2 mA 5
0
0
10 3
5
10
15
V
25
VCB(VEB)
ΙC
5
2007-04-19
SMBT2222A/MMBT2222A
Total power dissipation Ptot = ƒ(TS)
Permissible Pulse Load
Ptotmax/P totDC = ƒ(tp)
10 3
360
mW
SMBT 2222/A
EHP00740
Ptot max
5
Ptot DC
300
tp
tp
D=
T
T
P tot
270
240
10 2
210
5
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
180
150
120
10 1
90
5
60
30
0
0
15
30
45
60
75
90 105 120
10 0
10 -6
°C 150
TS
10 -5
10 -4
10 -3
Storage time t stg = ƒ(IC)
Rise time tr = ƒ(IC)
Fall time t f = ƒ(IC)
td,tr
SMBT 2222/A
s
10 0
tp
Delay time t d = ƒ(IC )
10 3
ns
10 -2
EHP00744
10 3
SMBT 2222/A
EHP00745
ns
5
t s, t f
5
VCC = 30 V
h FE = 10
tr
ts
tr V = 5 V
BE
10 2
5
h FE = 10
10 2
td
VBE = 2 V
5
h FE = 20
tf
td
h FE = 10
VBE = 0 V
10 1
10 0
5
10 1
5
10 2 mA 5
ΙC
10 1
1
10
10 3
5
10
2
mA
5
10
3
ΙC
6
2007-04-19
Package SOT23
SMBT2222A/MMBT2222A
0.4 +0.1
-0.05
1)
2
0.08...0.1
C
0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9
0.2
0.25 M B C
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
2005, June
Date code (YM)
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
8
2.13
2.65
0.9
Pin 1
1.15
3.15
7
2007-04-19
SMBT2222A/MMBT2222A
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office ( www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
8
2007-04-19
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