MOTOROLA MCR8DCN Silicon controlled rectifier Datasheet

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by MCR8DCM/D
SEMICONDUCTOR TECHNICAL DATA
Reverse Blocking Thyristors
Motorola Preferred Devices
Designed for high volume, low cost, industrial and consumer applications
such as motor control; process control; temperature, light and speed control.
• Small Size
• Passivated Die for Reliability and Uniformity
• Low Level Triggering and Holding Characteristics
A
SCRs
8.0 AMPERES RMS
600 thru 800 VOLTS
• Available in Two Package Styles
Surface Mount Lead Form — Case 369A
Miniature Plastic Package — Straight Leads — Case 369
A
G
ORDERING INFORMATION
• To Obtain “DPAK” in Surface Mount Leadform (Case 369A)
Shipped in Sleeves — No Suffix, i.e. MCR8DCN
Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number,
i.e. MCR8DCNT4
• To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves —
Add “–1” Suffix to Device Number, i.e. MCR8DCN–1
K
K
A
G
CASE 369A–13
STYLE 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Rating
Peak Repetitive Off–State Voltage (1)
Peak Repetitive Reverse Voltage
(TJ = –40 to 125°C)
Value
VDRM
VRRM
MCR8DCM
MCR8DCN
On–State RMS Current
(All Conduction Angles; TC = 105°C)
IT(RMS)
Peak Non–Repetitive Surge Current
(One Half Cycle, 60 Hz, TJ = 125°C)
ITSM
Average Gate Power
(t = 8.3 msec, TC = 105°C)
Amps
8.0
IT(AV)
Peak Gate Power
(Pulse Width ≤ 10 sec, TC = 105°C)
Volts
600
800
Average On–State Current (All Conduction Angles; TC = 105°C)
Circuit Fusing Consideration (t = 8.3 msec)
Unit
5.1
80
I2t
26
PGM
A2sec
Watts
5.0
PG(AV)
0.5
Peak Gate Current (Pulse Width ≤ 10 sec, TC = 105°C)
Operating Junction Temperature Range
Storage Temperature Range
IGM
2.0
Amps
TJ
–40 to 125
°C
Tstg
–40 to 150
Symbol
Max
Unit
RJC
RJA
RJA
2.2
88
80
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (2)
TL
260
°C
(1) VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
Maximum Lead Temperature for Soldering Purposes (3)
(2) Surface mounted on minimum recommended pad size.
(3) 1/8″ from case for 10 seconds.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
 Motorola, Inc. 1997
1
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Characteristics
Peak Forward Blocking Current
Peak Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
Min
Typ
Max
IDRM
IRRM
TJ = 25°C
TJ = 125°C
Peak On–State Voltage (1)
(ITM = 16 A)
VTM
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 W, TJ = 25°C)
(VD = 12 V, RL = 100 W, TJ = –40°C)
IGT
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 W, TJ = 25°C)
(VD = 12 V, RL = 100 W, TJ = –40°C)
(VD = 12 V, RL = 100 W, TJ = 125°C)
VGT
Holding Current
(VD = 12 V, IT = 200 mA, TJ = 25°C)
(VD = 12 V, IT = 200 mA, TJ = –40°C)
IH
Latching Current
(VD = 12 V, IG = 15 mA, TJ = 25°C)
(VD = 12 V, IG = 30 mA, TJ = –40°C)
IL
Unit
mA
—
—
—
—
0.01
5.0
—
1.4
1.8
2.0
—
7.0
—
15
30
0.5
—
0.2
0.65
—
—
1.0
2.0
—
4.0
—
22
—
30
60
4.0
—
22
—
30
60
Min
Typ
Max
50
200
—
Volts
mA
Volts
mA
mA
DYNAMIC CHARACTERISTICS
Characteristics
Critical Rate of Rise of Off–State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
Symbol
dv/dt
Unit
V/ms
(1) Pulse Test; Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
2
Motorola Thyristor Device Data
120
P(AV) , AVERAGE POWER DISSIPATION (WATTS)
125
a
a = Conduction
115
Angle
110
dc
105
a = 30°
60°
90°
120°
180°
100
0
1.0
2.0
4.0
3.0
5.0
180°
8.0
120°
a
90°
a = Conduction
6.0
dc
Angle
4.0
60°
a = 30°
2.0
0
0
1.0
3.0
2.0
4.0
6.0
5.0
IT(AV), AVERAGE ON–STATE CURRENT (AMPS)
IT(AV), AVERAGE ON–STATE CURRENT (AMPS)
Figure 1. Average Current Derating
Figure 2. On–State Power Dissipation
100
1.0
TYPICAL @ TJ = 25°C
MAXIMUM @ TJ = 125°C
10
MAXIMUM @ TJ = 25°C
1.0
0.1
0.1
ZqJC(t) = RqJC(t)Sr(t)
0.01
0
2.0
1.0
4.0
3.0
0.1
5.0
1.0
10
100
1000
10 K
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
t, TIME (ms)
Figure 3. On–State Characteristics
Figure 4. Transient Thermal Response
0.9
VGT, GATE TRIGGER VOLTAGE (VOLTS)
100
I GT, GATE TRIGGER CURRENT (mA)
10
6.0
r(t) , TRANSIENT RESISTANCE
(NORMALIZED)
I T, INSTANTANEOUS ON–STATE CURRENT (AMPS)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)
10
1.0
–40 –25 –10
0.8
0.7
0.6
0.5
0.4
0.3
0.2
5.0
20
35
50
65
80
95
110 125
–40 –25 –10
5.0
20
35
50
65
80
95
110 125
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
Motorola Thyristor Device Data
3
100
IL, LATCHING CURRENT (mA)
IH , HOLDING CURRENT (mA)
100
10
1.0
–40 –25 –10
5.0
20
35
50
65
80
95
110
125
10
1.0
–40 –25 –10
5.0
20
35
50
65
80
95
110
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
125
1000
STATIC dv/dt (V/ ms)
VD = 800 V
TJ = 125°C
100
10
100
1000
10 K
RGK, GATE–CATHODE RESISTANCE (OHMS)
Figure 9. Exponential Static dv/dt versus
Gate–Cathode Resistance
4
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
–T–
C
B
V
E
R
4
Z
A
S
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
3
U
K
F
J
L
H
D
2 PL
G
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
INCHES
MIN
MAX
0.235
0.250
0.250
0.265
0.086
0.094
0.027
0.035
0.033
0.040
0.037
0.047
0.180 BSC
0.034
0.040
0.018
0.023
0.102
0.114
0.090 BSC
0.175
0.215
0.020
0.050
0.020
–––
0.030
0.050
0.138
–––
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.84
1.01
0.94
1.19
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.45
5.46
0.51
1.27
0.51
–––
0.77
1.27
3.51
–––
T
STYLE 4:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
CASE 369A–13
ISSUE Y
Motorola Thyristor Device Data
5
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6
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Motorola Thyristor Device
Data
MCR8DCM/D
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