Kexin BAT62-07W Silicon schottky diode Datasheet

Diodes
SMD Type
Silicon Schottky Diode
BAT62-07W
SOT-343
Unit: mm
Features
Low barrier diode for detectors up to GHz frequencies.
Absolute Maxim um Ratings Ta = 25
Symbol
Value
Unit
Diode reverse voltage
Parameter
VR
40
V
Forward current
IF
20
mA
P tot
100
mW
Tj
150
T stg
-55 to + 150
Total power dissipation, T S = 103
Junction temperature
Storage temperature range
Junction - ambient
R th JA
630
K/W
Junction - soldering point
R th JS
470
K/W
Electrical Characteristics Ta = 25
Parameter
Reverse current
Symbol
Test Condition
IR
V R = 40 V
Min
Typ
Max
Unit
10
A
Forward voltage
IF
IF = 2 mA
0.58
1
V
Diode capacitance
CT
f = 1 MHz; V R = 0
0.35
0.6
pF
Case capacitance
CC
f = 1 MHz
0.1
Differential resistance
RO
V R = 0, f = 10 KHz
225
Series inductance chip to ground
LS
2
pF
K
nH
Marking
Marking
62s
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