Rohm EMZ7 General purpose transistor (dual transistors) Datasheet

EMZ7 / UMZ7N
Transistors
General purpose transistor
(dual transistors)
EMZ7 / UMZ7N
z External dimensions (Unit : mm)
0.5
2.0
0.65
1.25
0to0.1
0.9
0.7
0.15
2.1
0.1Min.
ROHM : EMT6
1.3
(3)
(1)
(6)
(1)
Each lead has same dimensions
zStructure
NPN / PNP epitaxial planar silicon transistor
(2)
(4)
(5)
(2)
1.2
1.6
0.2
(5)
(6)
0.5 0.5
1.0
1.6
0.22
(3)
(4)
0.65
UMZ7N
EMZ7
0.13
zFeatures
1) Both a 2SA2018 chip and 2SC5585 chip in a EMT or
UMT package.
2) Mounting possible with EMT3 or UMT3 automatic
mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
5) Low VCE(sat)
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : Z7
Abbreviated symbol : Z7
z Equivalent Circuit
EMZ7 / UMZ7N
(3)
(2)
(1)
Tr1
Tr2
(4)
(5)
(6)
z Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Tr1
Tr2
Unit
Collector-base voltage
VCBO
15
−15
Collector-emitter voltage
VCEO
12
−12
V
Emitter-base voltage
VEBO
6
−6
V
Collector current
Collector power dissipation
V
IC
500
−500
mA
ICP
1
−1
A
PC
150(TOTAL)
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗1
∗1 120mW per element must not be exceeded.
Rev.A
1/4
EMZ7 / UMZ7N
Transistors
z Electrical characteristics (Ta=25°C)
Tr1 (NPN)
Symbol
Min.
Typ.
Max.
Collector-base breakdown voltage
BVCBO
15
−
−
V
IC= 10µA
Collector-emitter breakdown voltage
BVCEO
12
−
−
V
IC= 1mA
Emitter-base breakdown voltage
BVEBO
6
−
−
V
IE= 10µA
ICBO
−
−
0.1
µA
VCB= 15V
Parameter
Collector cutoff current
Conditions
IEBO
−
−
0.1
µA
VEB= 6V
VCE(sat)
−
90
250
mV
IC/IB= 200mA /10mA
hFE
270
−
680
−
fT
−
320
−
MHz
Cob
−
7.5
−
pF
Emitter cutoff current
Collector-emitter saturation voltage
Unit
DC current transfer ratio
Transition frequency
Output capacitance
VCE/IC= 2V/10mA
VCE= 2V, IC= −10mA, f= 100MHz
VCB= 10V, IE= 0A, f= 1MHz
Tr2 (PNP)
Parameter
Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
−15
−
−
V
IC= −10µA
Collector-emitter breakdown voltage
BVCEO
−12
−
−
V
IC= −1mA
Emitter-base breakdown voltage
BVEBO
−6
−
−
V
IE= −10µA
ICBO
−
−
−0.1
µA
VCB= −15V
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
IEBO
−
−
−0.1
µA
VEB= −6V
VCE(sat)
−
−100
−250
mV
IC/IB= −200mA/−10mA
hFE
270
−
680
−
fT
−
260
−
MHz
Cob
−
6.5
−
pF
VCE/IC= −2V/−10mA
VCE= −2V, IC= 10mA, f= 100MHz
VCB= −10V, IE= 0A, f= 1MHz
zPackaging specifications
Taping
Packaging type
Code
Part No.
Basic ordering unit (pieces)
TR
T2R
3000
8000
−
UMZ7N
EMZ7
−
Rev.A
2/4
EMZ7 / UMZ7N
Transistors
VCE=2V
1000
DC CURRENT GAIN : hFE
200
100
10
−40°C
25°C
20
25°C
50
5
−40°C
200
100
50
20
10
5
2
2
1
1
0
0.5
1.0
1.5
1
2
50 100 200 500 1000
500
200
100
50
20 IC/IB=50
10
20
10
5
2
1
2
5 10 20
50 100 200 5001000
IC/IB=20
5000
50
Ta=125°C
20
−40°C
25°C
10
5
2
1
1
500
50 100 200 5001000
500
200
VCE=2V
Ta=25˚C
Pulsed
200
100
1000
50
20
100
10
50
5
20
2
10
5 10 20
1000
25°C
125°C
2000
2
COLLECTOR CURRENT : IC(mA)
Ta=−40°C
1
1
2
5 10 20
50 100 200 5001000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
Fig.5 Base-emitter saturation voltage
vs. collector current
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
100
Fig.3 Collector-emitter saturation voltage
vs. collector current ( Ι )
COLLECTOR CURRENT : IC (mA)
1000
200
fT (MHZ)
Ta=25°C
BASE SATURATION VOLTAGE : VBE (sat) (mV)
10000
1000
IC/IB=20
500
Fig.2 DC current gain vs.
collector current
Fig.1 Grounded emitter propagation
characteristics
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
5 10 20
1000
COLLECTOR CURRENT : IC(mA)
BASE TO EMITTER VOLTAGE : VBE(V)
1
VCE=2V
Ta=125°C
25°C
500
500
Ta = 1
COLLECTOR CURRENT : IC(mA)
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
zElectrical characteristic curves
Tr1 (NPN)
1
2
5
10 20
50 100 200 5001000
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6 Collector output capacitance
Emitter input capacitance vs. base voltage
IE=0A
f=1MHz
Ta=25°C
500
200
100
50
Cib
20
Cob
10
5
2
1
0.1 0.2
0.5 1
2
5 10 20
50 100
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector output capacitance
vs collector-base voltage
Emitter input capacitance
vs emitter-base voltage
Rev.A
3/4
EMZ7 / UMZ7N
Transistors
DC CURRENT GAIN : hFE
Ta=25°C
200
100
Ta=125
˚C
20
10
Ta= -40˚C
50
5
200
50
20
10
5
2
1
1
1.0
0.5
1.5
Ta= −40°C
100
2
0
1
2
BASE TO EMITTER VOLTAGE : VBE (V)
20
50 100 200
200
100
50
IC / IB=50
IC / IB=20
20
IC / IB=10
10
5
2
1
2
5
10
20
50 100 200
500 1000
IC/IB=20
5000
2000
Ta=25°C
1000
Ta= −40°C
500
Ta=125°C
200
100
50
20
10
Fig.11 Collector-emitter saturation voltage
vs. collector current
1000
IC/IB=20
500
200
100
Ta=125°C
50
20
2
5
10
20
Ta= −40°C
10
5
2
1
1
2
5
10
20
50 100 200
500 1000
COLLECTOR CURRENT : IC (mA)
1000
50 100 200
500 1000
Fig.12 Base-emitter saturation voltage
vs. collector current
VCE=2V
Ta=25°C
500
200
100
50
20
10
5
2
1
1
Ta=25°C
Fig.10 Collector-emitter saturation voltage
vs. collector current ( Ι )
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
1000
500 1000
Fig.9 DC current gain vs.
collector current
BASER SATURATION VOLTAGE : VBE (sat) (mV)
Ta=25°C
500
EMITTER INPUT CAPACITANCE : Cib(F)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
10
10000
1000
1
5
COLLECTOR CURRENT : IC (mA)
Fig.8 Grounded emitter propagation
characteristics
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
VCE=2V
Ta=125°C
500
TRANSITION FREQUENCY : fT (MHz)
1000
VCE=2V
500
Ta=25˚C
COLLECTOR CURRENT : IC (mA)
1000
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
Tr2 (PNP)
1
2
5
10
20
50 100 200
500 1000
EMITTER CURRENT : IC (mA)
Fig.13 Gain bandwidth product vs.
emitter current
IE=0A
500
f=1MHz
Ta=25°C
200
100
50
Cib
20
10
Cob
5
2
1
0.1 0.2
0.5
1
2
5
10 20
50 100
EMITTER TO BASE VOLTAGE : VEB(V)
Fig.14
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Rev.A
4/4
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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ROHM CO., LTD. is granted to any such buyer.
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The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
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About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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