Rectron CMBT2907 Pnp silicon planar epitaxial transistor Datasheet

CMBT2907
PNP Silicon Planar Epitaxial Transistors
Pin configuration:
1. BASE
2. EMITTER
3. COLLECTOR
3
1
2
Unit: mm
SOT-23 SMD Package
Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Power dissipation up to Tamb = 25 oC
Storage Temperature
Junction Temperature
DC Current Gain
-VCE = 10V -IC = 500mA
Turn-off switching time
-ICon = 150 mA; -IBon = IBoff = 15 mA
Transition frequency at f = 100 MHz
-IC = 50 mA; -VCE = 20 V
Thermal Characteristics
Junction to Ambient in free air
SYMBOL
CMBT2907
CMBT2907A
UNITS
-VCEO
-VCBO
-VEBO
-IC
Ptot
Tstg
40
60
5.0
60
60
5.0
V
600
250
-55 to +150
150
Tj
hFE
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o
> 30
C
> 50
toff
< 100
ns
fT
> 200
MHz
Rth(j-a)
500
K/W
Electrical Characteristics (at Ta=25 oC unless otherwise specified)
CONDITIONS
DESCRIPTION
SYMBOL
IE = 0, -VCB = 50V
-ICBO
Collector Cut Off Current
-ICBO
IE = 0, -VCB = 50V, Tj=125oC
-VEB = 0.5V, -VCE = 30V
-ICEX
-VEB = 3V, -VCE = 30V
-IBEX
Base Current w/reverse biased emitter junction
Saturation Voltages
-VCE(Sat)
-IC = 150mA, -IB = 15mA
-VBE(Sat)
-VCE(Sat)
-IC = 500mA, -IB = 50mA
-VBE(Sat)
-V(BR)CBO Open emitter; -IC= 10uA, IE= 0
Collector-base breakdown voltage
-V(BR)CEO Open base; -IC= 10mA, IB= 0
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
mA
mW
-V(BR)EBO Open collector; -IE= 10uA, IC= 0
CMBT2907
CMBT2907A
< 20
< 10
< 20
< 10
< 50
UNITS
nA
uA
nA
< 50
< 0.4
< 1.3
< 1.6
V
< 2.6
> 60
> 40
> 60
> 5.0
1 of 2
CMBT2907
PNP Silicon Planar Epitaxial Transistors
DC Current Gain
hFE
> 35
> 75
-VCE = 10V, -IC = 0.1mA
-VCE = 10V, -IC = 1mA
> 50
> 100
-VCE = 10V, -IC = 10mA
> 75
> 100
-VCE = 10V, -IC = 150mA
-VCE = 10V, -IC = 500mA
100 to 300
> 30
> 50
Transition Frequency at f = 100 MHz
fT
-VCE=20V, -IC=50mA
> 200
MHZ
Output Capacitance at f = 1 MHz
CO
-VCB = 10V, IE = Ie = 0
< 8.0
pF
Input Capacitance at f = 1 MHz
Switching times (between 10% and 90%)
Ci
-VEB = 2V, IC = Ic = 0
< 30
pF
-IC = 150mA, -IB = 15mA,
VCC = 30V
Turn-on time when switched to
delay time
td
< 10
rise time
tr
< 40
ton
< 45
turn on time (td + tr)
Turn-off time when switched from
-IC = 150mA, -IB = 15mA,
VCC = 6V
to cut-off with + IBM = 15 mA
storage time
ts
fall time
tf
< 30
toff
< 100
turn off time (ts + tf)
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ns
< 80
ns
2 of 2
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