Comset MSS40 Back to back scr module Datasheet

SEMICONDUCTORS
MSS40 / MSS50 Series
BACK TO BACK SCR MODULE
The MSS40 / MSS50 Series is based on
two back-to-back SCR configurations,
providing high noise immunity.
They are suitable for high power
applications.
The compactness of the SOT-227
package allows high power density and
optimized power bus connections.
Compliance to RoHS.
SOT-227
MAIN FEATURES
•
•
•
IT(RMS) :
55 and 70 A
VDRM/VRRM : 800 and 1200 V
IGT :
50 mA
1 : Thyristor 2 Anode (A2)
2 : Thyristor 2 Gate (G2)
3 : Thyristor 1 Anode (A1)
4 : Thyristor 1 Gate (G1)
MSS
40 -
SCR
MODULE
SERIES
800
VOLTAGE :
800 : 800V
1200 : 1200V
CURRENT :
40 : 55A
50 : 70A
29/10/2012
COMSET SEMICONDUCTORS
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SEMICONDUCTORS
MSS40 / MSS50 Series
ABSOLUTE MAXIMUM RATINGS
Value
Symbol
IT(RMS)
ITSM
I2t
Dl/dt
IGM
PG(AV)
Tj
Tstg
VRGM
Ratings
Unit
TC = 80 °C
TC = 85 °C
RMS on-state current
tp = 16.7ms
Non repetitive surge
peak on-state current
tp = 20ms
I2t Value for fusing
tp = 10ms
Critical rate of rise of onstate current
F = 120Hz
IG = 2xIGT, tr ≤ 100ns
Peak gate current
tp = 20µs
Average gate power dissipation
Operating junction temperature range
Storage junction temperature range
Maximum peak reverse gate voltage
Tj = 25 °C
Tj = 25 °C
MSS40
MSS50
55
420
400
800
70
630
600
1800
A
A
A2s
Tj = 125 °C
50
A/µs
Tj = 125 °C
Tj = 125 °C
4
1
-40 to +125
-40 to +150
5
A
W
°C
V
THERMAL CHARACTERISTICS
Symbol
Rth(j-c)
Ratings
Value
MSS40
0.6
MSS50
0.45
Junction to case (AC)
29/10/2012
Unit
°C/W
COMSET SEMICONDUCTORS
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SEMICONDUCTORS
MSS40 / MSS50 Series
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Test Conditions
Tj = 25 °C
IDRM
VDRM = VDRM Rated
Tj = 125 °C
Tj = 25 °C
IRRM
VRRM = VRRM Rated
Tj = 125 °C
IGT
VD = 12 V, RL = 33 Ω
VGT
VD = 12 V, RL = 33 Ω
VGD
VD = VDRM, RL = 3.3 kΩ
IH
IT = 500 mA Gate open
VTM
ITM = 80A tp = 380 µs
ITM = 100A tp = 380 µs
IL
IG = 1.2xIGT
dV/dt
VD = 67% VDRM
Gate open
Tj = 125 °C
Vt0
Threshold voltage
Tj = 125 °C
Rd
Dynamic resistance
Tj = 125 °C
29/10/2012
Tj = 125 °C
Tj = 25 °C
MSS40
MSS50
MSS40
MSS50
MSS40
MSS50
MSS40
MSS50
MSS40
MSS50
MSS40
MSS50
MSS40
MSS50
MSS40
MSS50
MSS40
MSS50
MSS40
MSS50
MSS40
MSS50
MSS40
MSS50
MSS40
MSS50
COMSET SEMICONDUCTORS
Min
Typ
Max
Unit
-
-
20
µA
-
-
10
mA
-
-
20
µA
-
-
10
mA
5
-
50
mA
-
-
1.3
V
0.2
-
-
V
-
-
80
mA
-
-
1.7
1.7
V
-
-
120
mA
1000
-
-
V/µs
-
-
0.85
V
-
-
11
7
mΩ
3|4
SEMICONDUCTORS
MSS40 / MSS50 Series
MECHANICAL DATA CASE SOT-227
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
29/10/2012
[email protected]
COMSET SEMICONDUCTORS
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