Chenmko CHTA42LPT High voltage npn transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
CHTA42LPT
SURFACE MOUNT
High Voltage NPN Transistor
VOLTAGE 300 Volts
CURRENT 500 mAmpere
APPLICATION
* Small Signal Amplifier .
FEATURE
MARKING
* NB
(2)
.103 (2.64)
.086 (2.20)
.028 (0.70)
.020 (0.50)
.045 (1.15)
.033 (0.85)
C (3)
.002 (0.05)
.055 (1.40)
.047 (1.20)
(3)
.007 (0.177)
.066 (1.70)
* NPN Silicon Transistor
* Epitaxial planner type
.110 (2.80)
.082 (2.10)
.119 (3.04)
(1)
CONSTRUCTION
CIRCUIT
.019 (0.50)
.041 (1.05)
.033 (0.85)
* PD= 300mW (mounted on ceramic substrate).
* High saturation current capability.
.018 (0.30)
SOT-23
* Surface mount package. (SOT-23)
* Low saturation voltage VCE(sat)=0.5V(max.)(IC=20mA)
* Low cob. Cob=3.0pF(Typ.)
(1) B
E(2)
SOT-23
Dimensions in inches and (millimeters)
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
SYMBOL
MIN.
MAX.
UNITS
Collector - Base Voltage
RATINGS
Open Emitter
CONDITION
VCBO
-
300
Volts
Collector - Emitter Voltage
Open Base
VCEO
-
300
Volts
Emitter - Base Voltage
Open Collector
VEBO
-
6.0
Volts
IC
-
500
mAmps
Peak Collector Current
ICM
-
500
mAmps
Peak Base Current
IBM
-
15
mAmps
PTOT
-
300
mW
TSTG
-55
+150
o
C
C
C
Collector Current DC
Total Power Dissipation
TA ≤ 25OC; Note 1
Storage Temperature
Junction Temperature
Operating Ambient Temperature
TJ
-
+150
o
TAMB
-55
+150
o
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
2002-11
RATING CHARACTERISTICS ( CHTA42LPT )
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
SYMBOL
MIN.
TYPE
MAX.
UNITS
Collector Cut-off Current
PARAMETERS
IE=0; VCB=200V
ICBO
-
-
0.1
uA
Emitter Cut-off Current
IC=0; VEB=6.0V
IEBO
-
-
0.1
uA
DC Current Gain
VCE=10V; Note 1
IC=1.0mA
IC=10mA
IC=30mA
hFE
25
40
40
-
-
Collector-Emitter Saturation Voltage
IC=20mA; IB=2mA
VCE(sat)
-
-
0.5
Volts
Base-Emitter Saturatio Voltage
IC=20mA; IB=2mA
VBE(sat)
-
-
0.9
Volts
Output Collector Capacitance
IE=ie=0; VCB=20V;
f=1MHz
Cob
-
-
3.0
pF
Transition Frequency
IC=10mA; VCE=20V;
f=100MHz
fT
50
-
-
MHz
Note :
1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02.
CONDITION
RATING CHARACTERISTIC CURVES ( CHTA42LPT )
Figure 1. DC Current Gain
120
hFE, DC CURRENT GAIN
VCE=10Vdc
TJ = +125OC
100
80
25OC
60
40
-55OC
20
0
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 2. Capacitance
Figure 3. Current-Gain - Bandwidth
fT, CURRENT GAIN - BANDWIDT (MHz)
100
C, CAPACITANCE (pF)
Ceb @ 1MHz
10
1.0
0.1
Ccb @ 1MHz
0.1
1.0
10
100
VR, REVERSE VOLTAGE (VOLTS)
1000
80
70
60
50
40
30
20
10
1.0
TJ = 25OC
VCE = 20 V
f = 20 MHz
2.0 3.0
5.0 7.0 10
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 4. "ON" Voltages
1.4
V, VOLTAGE (VOLTS)
1.2
VCE(sat)@25OC,IC/IB=10
VCE(sat)@125OC,IC/IB=10
VCE(sat)@-55OC,IC/IB=10
VBE(sat)@25OC,IC/IB=10
1.0
0.8
VBE(sat)@125OC,IC/IB=10
0.6
VBE(sat)@-55OC,IC/IB=10
VBE(on)@25OC,VCE=10V
VBE(on)@125OC,VCE=10V
VBE(on)@-55OC,VCE=10V
0.4
0.2
0.0
0.1
1.0
10
IC, COLLECTOR CURRENT (mA)
100
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