PHILIPS BCV62 Pnp general-purpose double transistor Datasheet

BCV62
PNP general-purpose double transistors
Rev. 4 — 26 July 2010
Product data sheet
1. Product profile
1.1 General description
PNP general-purpose double transistors in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
Table 1.
Product overview
Type number
BCV62
Package
NPN complement
NXP
JEITA
SOT143B
-
BCV61
BCV62A
BCV61A
BCV62B
BCV61B
BCV62C
BCV61C
1.2 Features and benefits
„
„
„
„
„
Low current (max. 100 mA)
Low voltage (max. 30 V)
Matched pairs
AEC-Q101 qualified
Small SMD plastic package
1.3 Applications
„ Applications with working point independent of temperature
„ Current mirrors
1.4 Quick reference data
Table 2.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
open base
-
-
−30
V
-
-
−100
mA
VCE = −5 V; IC = −100 μA
100
-
-
VCE = −5 V; IC = −2 mA
100
-
800
Per transistor
VCEO
collector-emitter voltage
IC
collector current
Transistor TR1
hFE
DC current gain
BCV62
NXP Semiconductors
PNP general-purpose double transistors
Table 2.
Symbol
Quick reference data …continued
Parameter
Conditions
Min
Typ
Max
BCV62
100
-
800
BCV62A
100
-
250
BCV62B
220
-
475
BCV62C
420
-
800
Unit
Transistor TR2
VCE = −5 V; IC = −2 mA
DC current gain
hFE
2. Pinning information
Table 3.
Pinning
Pin
Description
1
collector TR2;
base TR1 and TR2
2
collector TR1
3
emitter TR1
4
emitter TR2
Simplified outline
4
3
Graphic symbol
4
TR2
1
3
TR1
2
1
2
006aaa843
3. Ordering information
Table 4.
Ordering information
Type number
BCV62
Package
Name
Description
Version
-
plastic surface-mounted package; 4 leads
SOT143B
BCV62A
BCV62B
BCV62C
4. Marking
Table 5.
Marking codes
Type number
Marking code[1]
BCV62
3M*
BCV62A
3J*
BCV62B
3K*
BCV62C
3L*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
BCV62
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 26 July 2010
© NXP B.V. 2010. All rights reserved.
2 of 14
BCV62
NXP Semiconductors
PNP general-purpose double transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VCBO
collector-base voltage
open emitter
-
−30
V
VCEO
collector-emitter voltage
open base
-
−30
V
VEBS
emitter-base voltage
VCE = 0 V
-
−6
V
IC
collector current
-
−100
mA
ICM
peak collector current
-
−200
mA
IBM
peak base current
-
−200
mA
-
250
mW
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB).
6. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Parameter
Rth(j-a)
thermal resistance from junction in free air
to ambient
[1]
Conditions
Min
Typ
Max
Unit
-
-
500
K/W
Conditions
Min
Typ
Max
Unit
VCB = −30 V; IE = 0 A
-
-
−15
nA
VCB = −30 V; IE = 0 A;
Tj = 150 °C
-
-
−5
μA
nA
[1]
Device mounted on an FR4 PCB.
7. Characteristics
Table 8.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Transistor TR1
ICBO
IEBO
emitter-base
cut-off current
VEB = −5 V; IC = 0 A
-
-
−100
hFE
DC current gain
VCE = −5 V;
IC = −100 μA
100
-
-
VCE = −5 V; IC = −2 mA
100
-
800
IC = −10 mA;
IB = −0.5 mA
-
−75
−300
mV
IC = −100 mA;
IB = −5 mA
-
−250
−650
mV
VCEsat
BCV62
Product data sheet
collector-base
cut-off current
collector-emitter
saturation voltage
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Rev. 4 — 26 July 2010
© NXP B.V. 2010. All rights reserved.
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BCV62
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PNP general-purpose double transistors
Table 8.
Characteristics …continued
Tj = 25 °C unless otherwise specified.
Symbol
VBEsat
Parameter
Conditions
base-emitter
saturation voltage
base-emitter voltage
VBE
Min
Typ
Max
Unit
IC = −10 mA;
IB = −0.5 mA
[1]
-
−700
-
mV
IC = −100 mA;
IB = −5 mA
[1]
-
−850
-
mV
IC = −2 mA; VCE = −5 V
[2]
−600
−650
−750
mV
IC = −10 mA; VCE = −5 V
[2]
-
-
−820
mV
fT
transition frequency
VCE = −5 V;
IC = −10 mA;
f = 100 MHz
100
-
-
MHz
Cc
collector capacitance
VCB = −10 V;
IE = ie = 0 A
-
4.5
-
pF
NF
noise figure
VCE = −5 V;
IC = −200 μA; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
-
-
10
dB
VCB = 0 V; IE = −250 mA
-
-
−1.5
V
VCB = 0 V; IE = −10 μA
−400
-
-
mV
BCV62
100
-
800
BCV62A
100
-
250
BCV62B
220
-
475
BCV62C
420
-
800
0.7
-
1.3
0.7
-
1.3
-
-
−5
Transistor TR2
VEBS
emitter-base voltage
DC current gain
hFE
VCE = −5 V; IC = −2 mA
Transistors TR1 and TR2
IC1/IE2
current matching
IE2 = −0.5 mA;
VCE1 = −5 V;
Tamb ≤ 25 °C
Tamb ≤ 150 °C
IE2
[1]
BCV62
Product data sheet
emitter current 2
VCE1 = −5 V
[3]
mA
VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2]
VBE decreases by about 2 mV/K with increasing temperature.
[3]
Device, without emitter resistors, mounted on an FR4 PCB.
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Rev. 4 — 26 July 2010
© NXP B.V. 2010. All rights reserved.
4 of 14
BCV62
NXP Semiconductors
PNP general-purpose double transistors
mgt711
500
mgt712
−1200
VBE
(mV)
−1000
hFE
400
(1)
(1)
−800
300
(2)
−600
(2)
200
(3)
−400
(3)
100
−200
0
−10−2
−10−1
−1
−10
0
−10−2
−102
−103
IC (mA)
VCE = −5 V
−10−1
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
BCV62A: DC current gain as a function of
collector current; typical values
mgt713
−104
Fig 2.
BCV62A: Base-emitter voltage as a function of
collector current; typical values
mgt714
−1200
VBEsat
(mV)
−1000
VCEsat
(mV)
(1)
(2)
−800
−103
(3)
−600
−400
(1)
−200
(3) (2)
−10
−10−1
−1
−10
−102
0
−10−1
−103
−1
IC (mA)
IC/IB = 20
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(3) Tamb = 150 °C
BCV62A: Collector-emitter saturation voltage
as a function of collector current; typical
values
BCV62
Product data sheet
−10
−102
−103
IC (mA)
(1) Tamb = 150 °C
Fig 3.
−102
−103
IC (mA)
(1) Tamb = −55 °C
(3) Tamb = −55 °C
−102
−10
VCE = −5 V
(2) Tamb = 25 °C
Fig 1.
−1
Fig 4.
BCV62A: Base-emitter saturation voltage as a
function of collector current; typical values
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Rev. 4 — 26 July 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
BCV62
NXP Semiconductors
PNP general-purpose double transistors
mgt715
1000
mgt716
−1200
VBE
(mV)
−1000
hFE
800
(1)
−800
600
(2)
(1)
−600
400
200
0
−10−2
−10−1
(2)
−400
(3)
−200
−1
−10
(3)
0
−10−2
−102
−103
IC (mA)
VCE = −5 V
−10−1
−1
−102
−103
IC (mA)
VCE = −5 V
(1) Tamb = 150 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(3) Tamb = 150 °C
Fig 5.
−10
BCV62B: DC current gain as a function of
collector current; typical values
mgt717
−104
Fig 6.
BCV62B: Base-emitter voltage as a function of
collector current; typical values
mgt718
−1200
VBEsat
(mV)
−1000
VCEsat
(mV)
(1)
−800
−103
(2)
−600
(3)
−400
−102
(1)
−200
(3) (2)
−10
−10−1
−1
−10
−102
0
−10−1
−103
−1
IC (mA)
IC/IB = 20
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(3) Tamb = 150 °C
BCV62B: Collector-emitter saturation voltage
as a function of collector current; typical
values
BCV62
Product data sheet
−102
−103
IC (mA)
(1) Tamb = 150 °C
Fig 7.
−10
Fig 8.
BCV62B: Base-emitter saturation voltage as a
function of collector current; typical values
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Rev. 4 — 26 July 2010
© NXP B.V. 2010. All rights reserved.
6 of 14
BCV62
NXP Semiconductors
PNP general-purpose double transistors
mgt719
1000
mgt720
−1200
VBE
(mV)
−1000
hFE
(1)
800
(1)
−800
600
(2)
(2)
−600
400
−400
(3)
(3)
200
−200
0
−10−2
−10−1
−1
−10
−102
−103
IC (mA)
0
−10−1
VCE = −5 V
−1
−102
−103
IC (mA)
VCE = −5 V
(1) Tamb = 150 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(3) Tamb = 150 °C
Fig 9.
−10
BCV62C: DC current gain as a function of
collector current; typical values
mgt721
−104
Fig 10. BCV62C: Base-emitter voltage as a function of
collector current; typical values
mgt722
−1200
VBEsat
(mV)
−1000
VCEsat
(mV)
(1)
−800
−103
(2)
−600
(3)
−400
−102
(1)
−200
(3) (2)
−10
−10−1
−1
−10
−102
−103
0
−10−1
−1
IC (mA)
IC/IB = 20
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(3) Tamb = 150 °C
Fig 11. BCV62C: Collector-emitter saturation voltage
as a function of collector current; typical
values
Product data sheet
−102
−103
IC (mA)
(1) Tamb = 150 °C
BCV62
−10
Fig 12. BCV62C: Base-emitter saturation voltage as a
function of collector current; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 26 July 2010
© NXP B.V. 2010. All rights reserved.
7 of 14
BCV62
NXP Semiconductors
PNP general-purpose double transistors
−30
mbk083
−VCE1max
(V)
IE2 =
1 mA
−20
5 mA
10 mA
−10
50 mA
0
10−1
1
10
102
RE (Ω)
IC1/IE2 = 1.3
Fig 13. Maximum collector-emitter voltage as a function of emitter resistor
(see Figure 15)
8. Test information
A
IC1
−VCE1
2
TR1
1
TR2
3
IE2 =
constant
4
006aaa841
Fig 14. Test circuit current matching
A
IC1
−VCE1
2
TR1
3
RE
1
TR2
IE2 =
constant
4
RE
006aac001
Fig 15. Current mirror with emitter resistors
BCV62
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 26 July 2010
© NXP B.V. 2010. All rights reserved.
8 of 14
BCV62
NXP Semiconductors
PNP general-purpose double transistors
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
3.0
2.8
1.1
0.9
1.9
4
2.5
2.1
3
0.45
0.15
1.4
1.2
1
2
0.88
0.78
0.48
0.38
0.15
0.09
1.7
Dimensions in mm
04-11-16
Fig 16. Package outline SOT143B
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
BCV62
Package
Description
SOT143B
4 mm pitch, 8 mm tape and reel
Packing quantity
3000
10000
-215
-235
BCV62A
BCV62B
BCV62C
[1]
BCV62
Product data sheet
For further information and the availability of packing methods, see Section 14.
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 26 July 2010
© NXP B.V. 2010. All rights reserved.
9 of 14
BCV62
NXP Semiconductors
PNP general-purpose double transistors
11. Soldering
3.25
0.6
(3×)
0.5
(3×)
1.9
solder lands
0.7 0.6
(3×) (3×)
solder resist
2
solder paste
3
occupied area
0.7 0.6
Dimensions in mm
0.75
0.95
0.9
1
sot143b_fr
Fig 17. Reflow soldering footprint SOT143B
4.45
2.2
1.2
(3×)
1.425
(3×)
solder lands
solder resist
4.6
2.575
occupied area
Dimensions in mm
1.425
preferred transport direction during soldering
1
1.2
sot143b_fw
Fig 18. Wave soldering footprint SOT143B
BCV62
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 26 July 2010
© NXP B.V. 2010. All rights reserved.
10 of 14
BCV62
NXP Semiconductors
PNP general-purpose double transistors
12. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BCV62 v.4
20100726
Product data sheet
-
BCV62_3
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
•
•
•
•
•
•
•
•
Legal texts have been adapted to the new company name where appropriate.
Section 1 “Product profile”: amended
Section 3 “Ordering information”: added
Section 4 “Marking”: updated
Figure 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 and 12: added
Section 8 “Test information”: added
Figure 16: superseded by minimized package outline drawing
Section 10 “Packing information”: added
Section 11 “Soldering”: added
Section 13 “Legal information”: updated
BCV62_3
19990408
Product specification
-
BCV62_CNV_2
BCV62_CNV_2
19970618
Product specification
-
-
BCV62
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 26 July 2010
© NXP B.V. 2010. All rights reserved.
11 of 14
BCV62
NXP Semiconductors
PNP general-purpose double transistors
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
BCV62
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 26 July 2010
© NXP B.V. 2010. All rights reserved.
12 of 14
BCV62
NXP Semiconductors
PNP general-purpose double transistors
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BCV62
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 26 July 2010
© NXP B.V. 2010. All rights reserved.
13 of 14
BCV62
NXP Semiconductors
PNP general-purpose double transistors
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8
Quality information . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing information . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 26 July 2010
Document identifier: BCV62
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