MOTOROLA MC74HC251N

SEMICONDUCTOR TECHNICAL DATA
"! ! !
"!$ #!
!! "!"!
High–Performance Silicon–Gate CMOS
The MC54/74HC251 is identical in pinout to the LS251. The device inputs
are compatible with standard CMOS outputs; with pullup resistors, they are
compatible with LSTTL outputs.
This device selects one of the eight binary Data Inputs, as determined by
the Address Inputs. The Output Enable pin must be a low level for the
selected data to appear at the outputs. If Output Enable is high, both the Y
and the Y outputs are in the high–impedance state. This 3–state feature
allows the HC251 to be used in bus–oriented systems.
The HC251 is similar in function to the HC151 which does not have
3–state outputs.
J SUFFIX
CERAMIC PACKAGE
CASE 620–10
16
1
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
16
1
1
•
•
•
•
•
•
Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2 to 6 V
Low Input Current: 1 µA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity: 134 FETs or 33.5 Equivalent Gates
ORDERING INFORMATION
MC54HCXXXJ
MC74HCXXXN
MC74HCXXXD
DATA
INPUTS
4
D1
3
D2
2
D3
1
D3
1
16
VCC
D2
2
15
D4
D1
3
14
D5
D0
4
13
D6
Y
5
12
D7
Y
OUTPUT
ENABLE
GND
6
11
A0
5 Y
7
10
A1
8
9
A2
DATA
OUTPUTS
D4 15
D5 14
6 Y
FUNCTION TABLE
D6 13
D7 12
ADDRESS
INPUTS
Inputs
A0 11
10
A1
A2 9
OUTPUT ENABLE
Ceramic
Plastic
SOIC
PIN ASSIGNMENT
LOGIC DIAGRAM
D0
D SUFFIX
SOIC PACKAGE
CASE 751B–05
16
A2
X
L
L
L
L
H
H
H
H
7
PIN 16 = VCC
PIN 8 = GND
A1 A0
X
L
L
H
H
L
L
H
H
X
L
H
L
H
L
H
L
H
Outputs
Output
Enable
Y
Y
H
L
L
L
L
L
L
L
L
Z
D0
D1
D2
D3
D4
D5
D6
D7
Z
D0
D1
D2
D3
D4
D5
D6
D7
Z = high impedance
D0, D1, …, D7 = the level of the respective
D input.
10/95
 Motorola, Inc. 1995
1
REV 6
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MC54/74HC251
MAXIMUM RATINGS*
Symbol
VCC
Parameter
DC Supply Voltage (Referenced to GND)
Value
Unit
– 0.5 to + 7.0
V
Vin
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
V
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
DC Input Current, per Pin
± 25
mA
Iin
Iout
DC Output Current, per Pin
± 50
mA
ICC
DC Supply Current, VCC and GND Pins
± 75
mA
PD
Power Dissipation in Still Air, Plastic or Ceramic DIP†
SOIC Package†
750
500
mW
Tstg
Storage Temperature
– 65 to + 150
_C
TL
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
v
_C
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
(Ceramic DIP)
v
260
300
* Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
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RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Vin, Vout
Parameter
Min
DC Supply Voltage (Referenced to GND)
Max
Unit
2.0
6.0
V
0
VCC
V
– 55
+ 125
_C
0
0
0
1000
500
400
ns
DC Input Voltage, Output Voltage (Referenced to GND)
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time
(Figure 1)
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
VCC
V
– 55 to
25_C
85_C
125_C
Unit
VIH
Minimum High–Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout|
20 µA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
VIL
Maximum Low–Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout|
20 µA
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
Minimum High–Level Output
Voltage
Vin = VIH or VIL
|Iout|
20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
4.5
6.0
3.98
5.48
3.84
5.34
3.70
5.20
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
4.5
6.0
0.26
0.26
0.33
0.33
0.40
0.40
6.0
± 0.1
± 1.0
± 1.0
µA
6.0
± 0.5
± 5.0
± 10
µA
6.0
8
80
160
µA
VOH
Vin = VIH or VIL |Iout|
|Iout|
VOL
Maximum Low–Level Output
Voltage
Vin = VIH or VIL
|Iout|
20 µA
Vin = VIH or VIL |Iout|
|Iout|
Iin
Maximum Input Leakage Current
IOZ
Maximum Three–State
Leakage Current
ICC
Maximum Quiescent Supply
Current (per Package)
4.0 mA
5.2 mA
4.0 mA
5.2 mA
Vin = VCC or GND
Output in High–Impedance State
Vin = VIL or VIH
Vout = VCC or GND
Vin = VCC or GND
Iout = 0 µA
V
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
MOTOROLA
2
High–Speed CMOS Logic Data
DL129 — Rev 6
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MC54/74HC251
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit
VCC
V
– 55 to
25_C
85_C
125_C
tPLH,
tPHL
Maximum Propagation Delay, Input D to Output Y or Y
(Figures 1, 2 and 5)
2.0
4.5
6.0
185
37
31
230
46
39
280
56
48
ns
tPLH,
tPHL
Maximum Propagation Delay, Input A to Output Y or Y
(Figures 3 and 5)
2.0
4.5
6.0
205
41
35
255
51
43
310
62
53
ns
tPLZ,
tPHZ
Maximum Propagation Delay, Output Enable to Output Y
(Figures 4 and 6)
2.0
4.5
6.0
195
39
33
245
49
42
295
59
50
ns
tPZL,
tPZH
Maximum Propagation Delay, Output Enable to Output Y
(Figures 4 and 6)
2.0
4.5
6.0
145
29
25
180
36
31
220
44
38
ns
tPLZ,
tPHZ
Maximum Propagation Delay, Output Enable to Output Y
(Figures 4 and 6)
2.0
4.5
6.0
220
44
37
275
55
47
330
66
56
ns
tPZL,
tPZH
Maximum Propagation Delay, Output Enable to Output Y
(Figures 4 and 6)
2.0
4.5
6.0
150
30
26
190
38
33
225
45
38
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 5)
2.0
4.5
6.0
75
15
13
95
19
16
110
22
19
ns
Maximum Input Capacitance
—
10
10
10
pF
Maximum Three–State Output Capacitance
(Output in High–Impedance State)
—
15
15
15
pF
Symbol
Cin
Cout
Parameter
Unit
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD
Power Dissipation Capacitance (Per Package)*
36
pF
* Used to determine the no–load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
PIN DESCRIPTIONS
INPUTS
Output Enable (Pin 7)
D0, D1, …, D7 (Pins 4, 3, 2, 1, 15, 14, 13, 12)
Data inputs. Data on one of these eight binary inputs may
be selected to appear on the output.
Output Enable. This input pin must be at a low level for the
selected data to appear at the outputs. If the Output Enable
pin is high, both the Y and Y outputs are taken to the high–
impedance state.
CONTROL INPUTS
OUTPUTS
A0, A1, A2 (Pins 11, 10, 9)
Y, Y (Pins 5, 6)
Address inputs. The data on these pins are the binary address of the selected input (see the Function Table).
Data outputs. The selected data is presented at these pins
in both true (Y output) and complemented (Y output) forms.
High–Speed CMOS Logic Data
DL129 — Rev 6
3
MOTOROLA
MC54/74HC251
SWITCHING WAVEFORMS
tr
tf
90%
50%
10%
INPUT D
tr
VCC
tPHL
tPLH
90%
50%
10%
OUTPUT Y
tTHL
tTLH
GND
tPHL
90%
50%
10%
OUTPUT Y
VCC
90%
50%
10%
INPUT D
GND
tPLH
tf
tTLH
tTHL
Figure 1.
Figure 2.
VCC
VALID
OUTPUT
ENABLE
VALID
VCC
INPUT A
OUTPUT
Y OR Y
GND
tPZL
50%
GND
tPLH
50%
Y OR Y
tPHL
Y OR Y
HIGH
IMPEDANCE
50%
tPZH
50%
tPLZ
tPHZ
50%
10%
VOL
90%
VOH
HIGH
IMPEDANCE
Figure 3.
Figure 4.
TEST CIRCUITS
TEST POINT
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
OUTPUT
DEVICE
UNDER
TEST
CL*
* Includes all probe and jig capacitance
CL*
* Includes all probe and jig capacitance
Figure 5.
MOTOROLA
CONNECT TO VCC WHEN
TESTING tPLZ AND tPZL.
CONNECT TO GND WHEN
TESTING tPHZ AND tPZH.
1 kΩ
Figure 6.
4
High–Speed CMOS Logic Data
DL129 — Rev 6
MC54/74HC251
EXPANDED LOGIC DIAGRAM
D0
D1
4
3
D2 2
D3 1
DATA
INPUTS
5 Y
D4 15
6 Y
D5 14
DATA
OUTPUTS
D6 13
D7 12
A 11
B 10
C
9
OUTPUT 7
ENABLE
High–Speed CMOS Logic Data
DL129 — Rev 6
5
MOTOROLA
MC54/74HC251
OUTLINE DIMENSIONS
J SUFFIX
CERAMIC PACKAGE
CASE 620–10
ISSUE V
–A
–
16
9
1
8
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4. DIM F MAY NARROW TO 0.76 (0.030) WHERE
THE LEAD ENTERS THE CERAMIC BODY.
–B
–
L
C
DIM
A
B
C
D
E
F
G
J
K
L
M
N
–T
K
N
SEATING
–
PLANE
E
M
F
J 16 PL
0.25 (0.010)
G
D 16 PL
0.25 (0.010)
T A
M
9
1
8
T B
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
ISSUE R
–A
–
16
M
C
DIM
A
B
C
D
F
G
H
J
K
L
M
S
L
S
–T
–
SEATING
PLANE
K
H
D 16 PL
0.25 (0.010)
M
M
J
G
T A
M
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751B–05
ISSUE J
–A
–
16
1
P 8 PL
0.25 (0.010)
8
M
B
M
G
K
F
R X 45°
C
–T
SEATING
–
PLANE
MOTOROLA
J
M
D 16 PL
0.25 (0.010)
M
T
B
S
A
S
6
INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
0.740 0.770 18.80 19.55
6.35
0.250 0.270
6.85
3.69
0.145 0.175
4.44
0.39
0.015 0.021
0.53
1.02
0.040 0.070
1.77
0.100 BSC
2.54 BSC
0.050 BSC
1.27 BSC
0.21
0.008 0.015
0.38
2.80
0.110 0.130
3.30
7.50
0.295 0.305
7.74
0°
0°
10°
10°
0.020 0.040
0.51
1.01
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
9
–B
–
MILLIMETERS
MIN
MAX
19.05 19.93
6.10
7.49
—
5.08
0.39
0.50
1.27 BSC
1.40
1.65
2.54 BSC
0.21
0.38
3.18
4.31
7.62 BSC
15°
0°
1.01
0.51
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
B
F
S
S
INCHES
MIN
MAX
0.750 0.785
0.240 0.295
—
0.200
0.015 0.020
0.050 BSC
0.055 0.065
0.100 BSC
0.008 0.015
0.125 0.170
0.300 BSC
15°
0°
0.020 0.040
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80 10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0°
7°
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386 0.393
0.150 0.157
0.054 0.068
0.014 0.019
0.016 0.049
0.050 BSC
0.008 0.009
0.004 0.009
0°
7°
0.229 0.244
0.010 0.019
High–Speed CMOS Logic Data
DL129 — Rev 6
MC54/74HC251
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High–Speed CMOS Logic Data
DL129 — Rev 6
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