MOTOROLA MC74HC257N

SEMICONDUCTOR TECHNICAL DATA
" "! !
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High–Performance Silicon–Gate CMOS
1
The MC74HC257 is identical in pinout to the LS257. The device inputs are
compatible with standard CMOS outputs; with pullup resistors, they are
compatible with LSTTL outputs.
This device selects a (4–bit) nibble from either the A or B inputs as
determined by the Select input. The nibble is presented at the outputs in
noninverted form when the Output Enable pin is at a low level. A high level on
the Output Enable pin switches the outputs into the high–impedance state.
The HC257 is similar in function to the HC157 which do not have 3–state
outputs.
1
ORDERING INFORMATION
MC74HCXXXN
MC74HCXXXD
Output Drive Capability: 15 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2 to 6 V
Low Input Current: 1 µA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity: 108 FETs or 27 Equivalent Gates
A1
A2
A3
B0
NIBBLE
B INPUT
B1
B2
B3
SELECT
2
SELECT
1
16
A0
2
15
VCC
OUTPUT
ENABLE
B0
3
14
A3
Y0
4
13
B3
A1
5
12
Y3
B1
6
11
A2
Y1
7
10
B2
GND
8
9
Y2
5
11
FUNCTION TABLE
14
4
3
7
6
9
12
10
Y0
Y1
Y2
Inputs
NONINVERTING
NIBBLE
OUTPUT
Y3
13
Outputs
Output
Enable
Select
Y0 – Y3
H
L
L
X
L
H
Z
A0 – A3
B0 – B3
X = don’t care
Z = high impedance
A0 – A3, B0 – B3 = the levels of the
respective Nibble Inputs.
1
OUTPUT 15
ENABLE
PIN 16 = VCC
PIN 8 = GND
10/95
 Motorola, Inc. 1995
Plastic
SOIC
PIN ASSIGNMENT
LOGIC DIAGRAM
NIBBLE
A INPUT
D SUFFIX
SOIC PACKAGE
CASE 751B–05
16
•
•
•
•
•
•
A0
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
16
1
REV 6
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MC74HC257
MAXIMUM RATINGS*
Symbol
VCC
Parameter
DC Supply Voltage (Referenced to GND)
Value
Unit
– 0.5 to + 7.0
V
Vin
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
V
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
DC Input Current, per Pin
± 20
mA
Iin
Iout
DC Output Current, per Pin
± 35
mA
ICC
DC Supply Current, VCC and GND Pins
± 75
mA
PD
Power Dissipation in Still Air
750
500
mW
Tstg
Storage Temperature
– 65 to + 150
_C
TL
Plastic DIP†
SOIC Package†
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
_C
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
260
* Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Vin, Vout
Parameter
Min
DC Supply Voltage (Referenced to GND)
Max
Unit
2.0
6.0
V
0
VCC
V
– 55
+ 125
_C
0
0
0
1000
500
400
ns
DC Input Voltage, Output Voltage (Referenced to GND)
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time
(Figure 1)
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
VCC
V
– 55 to
25_C
85_C
125_C
Unit
VIH
Minimum High–Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout|
20 µA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
VIL
Maximum Low–Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout|
20 µA
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
Minimum High–Level Output
Voltage
Vin = VIH or VIL
|Iout|
20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
4.5
6.0
3.98
5.48
3.84
5.34
3.70
5.20
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
4.5
6.0
0.26
0.26
0.33
0.33
0.40
0.40
VOH
Vin = VIH or VIL |Iout|
|Iout|
VOL
Maximum Low–Level Output
Voltage
Vin = VIH or VIL
|Iout|
20 µA
Vin = VIH or VIL |Iout|
|Iout|
Iin
IOZ
6.0 mA
7.8 mA
6.0 mA
7.8 mA
V
Maximum Input Leakage Current
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
µA
Maximum Three–State
Leakage Current
Output in High–Impedance State
Vin = VIL or VIH
Vout = VCC or GND
6.0
± 0.5
± 5.0
± 10
µA
Vin = VCC or GND
6.0
8
80
160
µA
Iout = 0 µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
ICC
MOTOROLA
Maximum Quiescent Supply
Current (per Package)
2
High–Speed CMOS Logic Data
DL129 — Rev 6
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MC74HC257
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit
VCC
V
– 55 to
25_C
85_C
125_C
tPLH,
tPHL
Maximum Propagation Delay, Nibble A or B to Output Y
(Figures 1 and 4)
2.0
4.5
6.0
100
20
17
125
25
21
150
30
26
ns
tPLH,
tPHL
Maximum Propagation Delay, Select to Output Y
(Figures 2 and 4)
2.0
4.5
6.0
100
20
17
125
25
21
150
30
26
ns
tPLZ,
tPHZ
Maximum Propagation Delay, Output Enable to Output Y
(Figures 3 and 5)
2.0
4.5
6.0
150
30
26
190
38
33
225
45
38
ns
tPZL,
tPZH
Maximum Propagation Delay, Output Enable to Output Y
(Figures 3 and 5)
2.0
4.5
6.0
150
30
26
190
38
33
225
45
38
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 4)
2.0
4.5
6.0
60
12
10
75
15
13
90
18
15
ns
Maximum Input Capacitance
—
10
10
10
pF
Maximum Three–State Output Capacitance
(Output in High–Impedance State)
—
15
15
15
pF
Symbol
Cin
Cout
Parameter
Unit
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD
Power Dissipation Capacitance (Per Package)*
39
pF
* Used to determine the no–load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
PIN DESCRIPTIONS
INPUTS
For the Output Enable input at a high level, the outputs are
switched to the high impedance state.
A0, A1, A2, A3 (Pins 2, 5, 11, 14)
Nibble A input. The data present on these pins is transferred to the output when the Select input is at a low level and
the Output Enable input is at a low level. The data is presented to the outputs in noninverted form.
CONTROL INPUTS
Select (Pin 1)
B0, B1, B2, B3 (Pins 3, 6, 10, 13)
Nibble B input. The logic data present on these pins is
transferred to the output when the Select input is at a high
level and the Output Enable input is at a low level. The data
is presented to the outputs in noninverted form.
Nibble select. This input determines the nibble to be transferred to the outputs. A low level on this input selects the A
inputs and a high level selects the B inputs.
OUTPUTS
Output Enable (Pin 15)
Y0, Y1, Y2, Y3 (Pins 4, 7, 9, 12)
Output Enable. A low level on this input allows the selected
input data to be presented at the outputs. A high level on this
input forces the outputs into the high–impedance state.
Nibble output. The selected nibble input is presented at
these outputs when the Output Enable input is at a low level.
High–Speed CMOS Logic Data
DL129 — Rev 6
3
MOTOROLA
MC74HC257
SWITCHING WAVEFORMS
tr
tf
NIBBLE INPUT
A OR B
VALID
VCC
90%
50%
10%
VCC
GND
tPLH
SELECT
tPHL
50%
GND
tPLH
90%
50%
10%
OUTPUT Y
VALID
tPHL
50%
OUTPUT Y
tTHL
tTLH
Figure 1.
Figure 2.
VCC
OUTPUT
ENABLE
50%
GND
tPZL
OUTPUT Y
HIGH
IMPEDANCE
50%
tPZH
OUTPUT Y
tPLZ
tPHZ
10%
VOL
90%
VOH
50%
HIGH
IMPEDANCE
Figure 3.
TEST CIRCUITS
TEST POINT
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
OUTPUT
DEVICE
UNDER
TEST
CL*
* Includes all probe and jig capacitance
CL*
* Includes all probe and jig capacitance
Figure 4.
MOTOROLA
CONNECT TO VCC WHEN
TESTING tPLZ AND tPZL.
CONNECT TO GND WHEN
TESTING tPHZ AND tPZH.
1 kΩ
Figure 5.
4
High–Speed CMOS Logic Data
DL129 — Rev 6
MC74HC257
EXPANDED LOGIC DIAGRAM
A0
B0
A1
B1
NIBBLE
INPUTS
A2
B2
A3
B3
SELECT
2
4
3
Y0
5
7
6
Y1
NIBBLE
OUTPUT
11
9
10
Y2
14
12
13
Y3
1
OUTPUT 15
ENABLE
High–Speed CMOS Logic Data
DL129 — Rev 6
5
MOTOROLA
MC74HC257
OUTLINE DIMENSIONS
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
ISSUE R
–A
–
16
9
1
8
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
B
F
C
DIM
A
B
C
D
F
G
H
J
K
L
M
S
L
S
–T
–
SEATING
PLANE
K
H
D 16 PL
0.25 (0.010)
M
M
J
G
T A
M
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751B–05
ISSUE J
–A
–
16
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
9
–B
–
1
P 8 PL
0.25 (0.010)
8
M
B
M
G
K
F
R X 45°
C
–T
SEATING
–
PLANE
J
M
D 16 PL
0.25 (0.010)
M
T
B
S
A
S
INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
0.740 0.770 18.80 19.55
6.35
0.250 0.270
6.85
3.69
0.145 0.175
4.44
0.39
0.015 0.021
0.53
1.02
0.040 0.070
1.77
0.100 BSC
2.54 BSC
0.050 BSC
1.27 BSC
0.21
0.008 0.015
0.38
2.80
0.110 0.130
3.30
7.50
0.295 0.305
7.74
0°
0°
10°
10°
0.020 0.040
0.51
1.01
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80 10.00
4.00
3.80
1.75
1.35
0.49
0.35
1.25
0.40
1.27 BSC
0.25
0.19
0.25
0.10
7°
0°
6.20
5.80
0.50
0.25
INCHES
MIN
MAX
0.386 0.393
0.150 0.157
0.054 0.068
0.014 0.019
0.016 0.049
0.050 BSC
0.008 0.009
0.004 0.009
0°
7°
0.229 0.244
0.010 0.019
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JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: [email protected] –TOUCHTONE (602) 244–6609
INTERNET: http://Design–NET.com
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
MOTOROLA
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CODELINE
6
*MC74HC257/D*
MC74HC257/D
High–Speed CMOS Logic Data
DL129 — Rev 6