MOTOROLA MC74HC367ADT

SEMICONDUCTOR TECHNICAL DATA
$ " ! # N SUFFIX
PLASTIC PACKAGE
16–LEAD
CASE 648–08
High–Performance Silicon–Gate CMOS
D SUFFIX
SOIC PACKAGE
16–LEAD
CASE 751B–05
The MC74HC367A is identical in pinout to the LS367. The device inputs
are compatible with standard CMOS outputs; with pullup resistors, they are
compatible with LSTTL outputs.
This device is arranged into 2–bit and 4–bit sections, each having its own
active–low Output Enable. When either of the enables is high, the affected
buffer outputs are placed into high–impedance states. The HC367A has
noninverting outputs.
DT SUFFIX
TSSOP PACKAGE
16–LEAD
CASE 948F–01
•
•
•
•
•
•
Output Drive Capability: 15 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2 to 6 V
Low Input Current: 1 µA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
• Chip Complexity: 92 FETs or 23 Equivalent Gates
ORDERING INFORMATION
MC74HCXXXAN
MC74HCXXXAD
MC74HCXXXADT
PIN ASSIGNMENT
OUTPUT
ENABLE 1
A0
LOGIC DIAGRAM
A0
A1
A2
A3
A4
2
3
4
5
7
6
10
9
12
11
Y0
Y1
Y2
1
16
Y0
3
14
VCC
OUTPUT
ENABLE 2
A5
2
15
A1
4
13
Y5
Y1
5
12
A4
A2
6
11
Y4
Y2
7
10
A3
GND
8
9
Y3
Y3
FUNCTION TABLE
Y4
Inputs
A5
OUTPUT ENABLE 1
13
14
Enable 1,
Enable 2
Y5
L
L
H
1
OUTPUT ENABLE 2 15
PIN 16 = VCC
PIN 8 = GND
3/97
1
Output
A
Y
L
H
X
L
H
Z
X = don’t care
Z = high impedance
This document contains information on a new product. Specifications and information herein are subject to
change without notice.
 Motorola, Inc. 1997
Plastic
SOIC
TSSOP
REV 0.1
MC74HC367A
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MAXIMUM RATINGS*
Symbol
VCC
Parameter
DC Supply Voltage (Referenced to GND)
Value
Unit
– 0.5 to + 7.0
V
V
Vin
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 50
mA
PD
Power Dissipation in Still Air,
750
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
_C
Iin
TL
Plastic DIP†
SOIC Package†
TSSOP Package†
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
v
v
_C
Lead Temperature, 1 mm from Case for 10 Seconds
Plastic DIP, SOIC or TSSOP Package
260
* Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
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RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Vin, Vout
Parameter
DC Supply Voltage (Referenced to GND)
Min
Max
Unit
2.0
6.0
V
0
VCC
V
– 55
+ 125
_C
0
0
0
1000
500
400
ns
DC Input Voltage, Output Voltage (Referenced to GND)
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time
(Figure 1)
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
S b l
Symbol
P
Parameter
T
Test
C
Conditions
di i
VCC
V
– 55 to
25_C
85_C
125_C
U i
Unit
VIH
Minimum High–Level Input
Voltage
Vout = VCC – 0.1 V
|Iout|
20 µA
2.0
3.0
4.5
6.0
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
V
VIL
Maximum Low–Level Input
Voltage
Vout = 0.1 V
|Iout|
20 µA
2.0
3.0
4.5
6.0
0.50
0.90
1.35
1.80
0.50
0.90
1.35
1.80
0.50
0.90
1.35
1.80
V
Minimum High–Level Output
Voltage
Vin = VIH
|Iout|
20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.20
3.70
5.20
VOH
Vin = VIH
MOTOROLA
|Iout|
|Iout|
|Iout|
2
3.6 mA
6.0 mA
7.8 mA
High–Speed CMOS Logic Data
DL129 — Rev 6
MC74HC367A
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DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
VOL
Parameter
Test Conditions
Maximum Low–Level Output
Voltage
Vin = VIL
|Iout|
20 µA
Vin = VIL
|Iout|
|Iout|
|Iout|
3.6 mA
6.0 mA
7.8 mA
VCC
V
– 55 to
25_C
85_C
125_C
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.40
0.40
0.40
Unit
V
Maximum Input Leakage Current
Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
µA
IOZ
Maximum Three–State
Leakage Current
Output in High–Impedance State
Vin = VIL or VIH
Vout = VCC or GND
6.0
± 0.5
± 5.0
± 10
µA
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0 µA
6.0
4
40
160
µA
Iin
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
Guaranteed Limit
S b l
Symbol
P
Parameter
VCC
V
– 55 to
25_C
85_C
125_C
U i
Unit
tPLH,
tPHL
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 3)
2.0
3.0
4.5
6.0
120
60
24
20
150
75
30
26
180
90
36
31
ns
tPLZ,
tPHZ
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
2.0
3.0
4.5
6.0
175
90
35
30
220
110
44
37
265
135
53
45
ns
tPZL,
tPZH
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
2.0
3.0
4.5
6.0
190
95
38
32
240
120
48
21
285
150
57
48
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
2.0
3.0
4.5
6.0
60
22
12
10
75
28
15
13
90
34
18
15
ns
Maximum Input Capacitance
—
10
10
10
pF
Maximum Three–State Output Capacitance
(Output in High–Impedance State)
—
15
15
15
pF
Cin
Cout
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD
P
Power
Dissipation
Di i i C
Capacitance
i
(P
(Per B
Buffer)*
ff )*
35
pF
F
* Used to determine the no–load dynamic power consumption: P D = C PD V CC 2 f + I CC V CC . For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
High–Speed CMOS Logic Data
DL129 — Rev 6
3
MOTOROLA
MC74HC367A
SWITCHING WAVEFORMS
VCC
tr
tf
OUTPUT ENABLE
VCC
90%
50%
10%
INPUT A
tPHL
OUTPUT Y
90%
50%
10%
OUTPUT Y
GND
tPZL
GND
tPLH
50%
tTLH
HIGH
IMPEDANCE
50%
tPZH
OUTPUT Y
tPLZ
tPHZ
10%
VOL
90%
VOH
50%
HIGH
IMPEDANCE
tTHL
Figure 1.
Figure 2.
TEST CIRCUITS
TEST POINT
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
OUTPUT
DEVICE
UNDER
TEST
CL*
* Includes all probe and jig capacitance
CONNECT TO VCC WHEN
TESTING tPLZ AND tPZL.
CONNECT TO GND WHEN
TESTING tPHZ AND tPZH.
1 kΩ
CL*
* Includes all probe and jig capacitance
Figure 3.
Figure 4.
LOGIC DETAIL
TO OTHER
BUFFERS
ONE OF 6
BUFFERS
VCC
Y
A
OUTPUT ENABLE
MOTOROLA
4
High–Speed CMOS Logic Data
DL129 — Rev 6
MC74HC367A
OUTLINE DIMENSIONS
N SUFFIX
PLASTIC PACKAGE
CASE 648–08
ISSUE R
–A
–
16
9
1
8
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
B
F
C
DIM
A
B
C
D
F
G
H
J
K
L
M
S
L
S
–T
–
SEATING
PLANE
K
H
D 16 PL
0.25 (0.010)
M
M
J
G
T A
M
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751B–05
ISSUE J
–A
–
16
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
9
–B
–
1
P 8 PL
0.25 (0.010)
8
M
B
M
G
K
F
R X 45°
C
–T
SEATING
–
PLANE
J
M
D 16 PL
0.25 (0.010)
High–Speed CMOS Logic Data
DL129 — Rev 6
M
T
B
S
A
S
5
INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
0.740 0.770 18.80 19.55
6.35
0.250 0.270
6.85
3.69
0.145 0.175
4.44
0.39
0.015 0.021
0.53
1.02
0.040 0.070
1.77
0.100 BSC
2.54 BSC
0.050 BSC
1.27 BSC
0.21
0.008 0.015
0.38
2.80
0.110 0.130
3.30
7.50
0.295 0.305
7.74
0°
0°
10°
10°
0.020 0.040
0.51
1.01
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80 10.00
4.00
3.80
1.75
1.35
0.49
0.35
1.25
0.40
1.27 BSC
0.25
0.19
0.25
0.10
7°
0°
6.20
5.80
0.50
0.25
INCHES
MIN
MAX
0.386 0.393
0.150 0.157
0.054 0.068
0.014 0.019
0.016 0.049
0.050 BSC
0.008 0.009
0.004 0.009
0°
7°
0.229 0.244
0.010 0.019
MOTOROLA
MC74HC367A
OUTLINE DIMENSIONS
DT SUFFIX
PLASTIC TSSOP PACKAGE
CASE 948F–01
ISSUE O
16X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
V
S
S
S
K
ÉÉ
ÇÇ
ÇÇ
ÉÉ
K1
2X
L/2
16
9
J1
B
–U–
L
SECTION N–N
J
PIN 1
IDENT.
8
1
N
0.25 (0.010)
0.15 (0.006) T U
S
A
–V–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH.
PROTRUSIONS OR GATE BURRS. MOLD FLASH OR
GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER
SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED
0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR PROTRUSION
SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED AT
DATUM PLANE –W–.
M
N
F
DETAIL E
–W–
C
0.10 (0.004)
–T– SEATING
PLANE
DETAIL E
H
D
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
4.90
5.10
4.30
4.50
–––
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.18
0.28
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.193
0.200
0.169
0.177
–––
0.047
0.002
0.006
0.020
0.030
0.026 BSC
0.007
0.011
0.004
0.008
0.004
0.006
0.007
0.012
0.007
0.010
0.252 BSC
0_
8_
G
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MOTOROLA
◊
6
MC74HC367A/D
High–Speed CMOS Logic Data
DL129 — Rev 6