IRF IRHNM57110 Simple drive requirement Datasheet

PD-97192C
IRHNM57110
JANSR2N7503U8
100V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.2)
REF: MIL-PRF-19500/743
5
Product Summary
Part Number
IRHNM57110
IRHNM53110
Radiation Level RDS(on)
100K Rads (Si) 0.22Ω
300K Rads (Si) 0.22Ω
ID
QPL Part Number
6.9A JANSR2N7503U8
6.9A JANSF2N7503U8
SMD-0.2
Refer to Page 10 for 1 Additional Part Number IRHNMC57110 (Ceramic Lid)
International Rectifier’s R5TM technology provides high
performance power MOSFETs for space applications. These
devices have been characterized for Single Event Effects
(SEE) with useful performance up to an LET of 80 (MeV/
(mg/cm2)). The combination of low RDS(on) and low gate
charge reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages of
MOSFETs such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical parameters.
(METAL LID)
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Complimentary P-Channel Available IRHNM597110, IRHNMC597110
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
TECHNOLOGY
Units
6.9
4.4
27.6
23
0.18
±20
24
6.9
2.3
11.5
-55 to 150
300 (for 5s)
0.25 (Typical)
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
For footnotes refer to the last page
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1
02/06/12
Pre-Irradiation
IRHNM57110, JANSR2N7503U8
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
100
—
—
V
—
0.13
—
V/°C
—
—
0.22
Ω
2.0
—
3.6
—
—
—
-7.5
—
—
—
4.0
—
—
10
25
V
mV/°C
S
nA
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
15
4.0
5.0
6.6
5.4
34
15
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
378
108
2.3
—
—
—
Rg
Gate Resistance
VDS = VGS, ID = 1.0mA
nC
ns
VDD = 50V, ID = 6.9A,
VGS = 12V, RG = 7.5Ω
nH
pF
Ω
8.0
VGS = 12V, ID = 4.4A Ã
VDS = 15V, IDS = 4.4A Ã
VDS= 80V ,VGS = 0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 6.9A
VDS = 50V
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 100KHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
6.9
27.6
1.2
144
633
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 6.9A, VGS = 0V „
Tj = 25°C, IF = 6.9A, di/dt ≤ 100A/µs
VDD ≤ 50V „
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
5.4
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Pre-Irradiation
Radiation
Characteristics
IRHNM57110, JANSR2N7503U8
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source„
On-State Resistance (TO-3)
Static Drain-to-Source On-state „
Resistance (SMD-0.2)
Diode Forward Voltage „
VSD
Test Conditions
V
µA
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20V
VDS = 80V, VGS = 0V
0.226
Ω
VGS = 12V, ID = 4.4A
0.22
Ω
VGS = 12V, ID = 4.4A
1.2
V
VGS = 0V, ID = 6.9A
Min
Max
100
2.0
—
—
—
—
4.0
100
-100
10
—
—
—
†
Units
Up to 300K Rads (Si)
1
nA
1. Part Numbers IRHNM57110, IRHNM53110. Additional part numbers ae listed on page 10.
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
2
(MeV/(mg/cm ))
Energy
Range
(MeV)
(µm)
VDS (V)
@VGS =
@VGS =
@VGS =
@VGS =
@VGS =
0V
-5V
-10V
-15V
-20V
300 ± 7.5%
38 ± 7.5%
100
100
100
100
100
61 ± 5%
330 ± 7.5%
31 ± 10%
100
100
100
35
25
84 ± 5%
350 ± 10%
28 ± 7.5%
100
100
80
25
-
Bias VDS (V)
38 ± 5%
120
100
80
60
40
20
0
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
0
-5
-10
-15
-20
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
Pre-Irradiation
IRHNM57110, JANSR2N7503U8
100
100
10
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
5.0V
1
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
10
BOTTOM
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
100
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
T J = 25°C
T J = 150°C
10
VDS = 50V
20µs PULSE
WIDTH
15
1.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
5.0V
1
VDS, Drain-to-Source Voltage (V)
ID = 6.9A
2.0
1.5
1.0
0.5
VGS = 12V
0.0
5
7
9
11
13
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
15
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRHNM57110, JANSR2N7503U8
1.6
RDS(on), Drain-to -Source On Resistance ( Ω)
RDS(on), Drain-to -Source On Resistance ( Ω)
Pre-Irradiation
ID = 6.9A
1.4
1.2
1.0
0.8
T J = 150°C
0.6
0.4
0.2
T J = 25°C
0
4
6
8
10
12
14
0.8
T J = 150°C
0.6
0.4
T J = 25°C
0.2
Vgs = 12V
0
16
0
2
4
8
10
12
14
16
ID, Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
Fig 6. Typical On-Resistance Vs
Drain Current
140
4
ID = 1.0mA
VGS(th) Gate threshold Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
6
130
120
110
3
2
1
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
0
100
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
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-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5
Pre-Irradiation
IRHNM57110, JANSR2N7503U8
700
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
600
C oss = C ds + C gd
20
ID = 6.9A
C rss = C gd
500
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
800
Ciss
400
Coss
300
200
100
16
VDS = 80V
VDS = 50V
VDS = 20V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 17
Crss
0
0
1
10
100
0
2
VDS, Drain-to-Source Voltage (V)
4
6
8
10
12
14
16
QG, Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
100
7
ISD, Reverse Drain Current (A)
6
ID, Drain Current (A)
10
TJ = 150°C
1
T J = 25°C
0.1
4
3
2
1
VGS = 0V
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
Fig 11. Typical Source-Drain Diode
Forward Voltage
6
5
1.6
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current Vs.
Case Temperature
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Pre-Irradiation
50
OPERATION IN THIS AREA LIMITED
BY RDS(on)
EAS , Single Pulse Avalanche Energy (mJ)
ID, Drain-to-Source Current (A)
100
IRHNM57110, JANSR2N7503U8
10
100µs
1
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
10ms
DC
TOP
40
BOTTOM
ID
3.1A
4.4A
6.9A
30
20
10
0
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response ( Z thJC )
10
D = 0.50
0.20
1
P DM
0.10
t1
0.05
t2
SINGLE PULSE
( THERMAL RESPONSE )
0.02
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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7
Pre-Irradiation
IRHNM57110, JANSR2N7503U8
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T.
RG
+
- VDD
IAS
VGS
20V
A
I AS
0.01Ω
tp
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
4.5V
50KΩ
.2µF
12V
QGS
.3µF
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
IG
Charge
Fig 17a. Basic Gate Charge Waveform
VDS
Fig 17b. Gate Charge Test Circuit
RD
VDS
90%
VGS
D.U.T.
RG
ID
Current Sampling Resistors
VDD
+
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
8
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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Pre-Irradiation
IRHNM57110, JANSR2N7503U8
Case Outline and Dimensions — SMD-0.2 ( Metal Lid)
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
PAD ASSIGNMENT
1 = DRAIN
2 = GATE
3 = SOURCE
Case Outline and Dimensions — SMD-0.2 (Ceramic Lid)
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
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PAD ASSIGNMENT
1 = DRAIN
2 = GATE
3 = SOURCE
9
Pre-Irradiation
IRHNM57110, JANSR2N7503U8
Footnotes:
 Repetitive Rating; Pulse width limited by
maximum junction temperature.
‚ VDD = 50V, starting TJ = 25°C, L=1.0 mH
Peak IL = 6.9A, VGS = 12V
ƒ ISD ≤ 6.9A, di/dt ≤ 560A/µs,
VDD ≤ 100V, TJ ≤ 150°C
„ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
† Total Dose Irradiation with VDS Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Additional Product Summary (continued from page 1 and 3)
Product Summary
Part Number
IRHNMC57110
IRHNMC53110
Radiation Level RDS(on) I D
100K Rads (Si) 0.22Ω 6.9A
300K Rads (Si) 0.22Ω 6.9A
QPL Part Number
JANSR2N7503U8C
JANSF2N7503U8C
SMD-0.2
( CERAMIC LID )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/2012
10
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