MOTOROLA MRF187SR3 Rf power field effect transistor Datasheet

N–Channel Enhancement–Mode Lateral MOSFETs
LIFETIME BUY
Designed for broadband commercial and industrial applications with
frequencies up to 1.0 GHz. The high gain and broadband performance of
these devices make them ideal for large–signal, common source amplifier
applications in 26 volt base station equipment.
• Guaranteed Performance @ 880 MHz, 26 Volts
Output Power — 85 Watts PEP
Power Gain — 12 dB
Efficiency — 30%
Intermodulation Distortion — –28 dBc
• 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR
@ 26 Vdc, 880 MHz, 85 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch
Reel.
1.0 GHz, 85 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 465–06, STYLE 1
NI–780
MRF187
CASE 465A–06, STYLE 1
NI–780S
MRF187SR3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Drain–Gate Voltage (RGS = 1 MΩ)
VDGR
65
Vdc
VGS
±20
Vdc
Drain Current — Continuous
ID
15
Adc
Total Device Dissipation @ TC ≥ 25°C
Derate above 25°C
PD
250
1.43
Watts
W/°C
Storage Temperature Range
Tstg
–65 to +200
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Max
Unit
RθJC
0.70
°C/W
Gate–Source Voltage
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 4
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2002
MRF187 MRF187R3 MRF187SR3
1
LAST ORDER 31JUL04
The RF MOSFET Line
LAST SHIP 31JAN05
Order this document
by MRF187/D
SEMICONDUCTOR TECHNICAL DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 550 mAdc)
VGS(Q)
3
—
5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
—
0.40
0.55
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 5 Adc)
gfs
—
2
—
S
Input Capacitance (Includes Internal Input MOScap)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
295
—
pF
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Coss
—
85
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
—
10
—
pF
Two–Tone Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Gps
12
13
—
dB
Two–Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
ηD
30
33
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IMD
—
–31
–28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IRL
9
15
—
dB
Two–Tone Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz and f1 = 895.0 MHz, f2 = 895.1 MHz)
Gps
—
13
—
dB
Two–Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz and f1 = 895.0 MHz, f2 = 895.1 MHz)
ηD
—
33
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz and f1 = 895.0 MHz, f2 = 895.1 MHz)
IMD
—
–31
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA,
f1 = 865.0 MHz, f2 = 865.1 MHz and f1 = 895.0 MHz, f2 = 895.1 MHz)
IRL
—
12
—
dB
Characteristic
LIFETIME BUY
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 85 W CW, IDQ = 550 mA,
f = 880 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests)
MRF187 MRF187R3 MRF187SR3
2
Ψ
No Degradation In Output Power
Before and After Test
MOTOROLA RF DEVICE DATA
LAST ORDER 31JUL04
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 50 µAdc)
LAST SHIP 31JAN05
OFF CHARACTERISTICS
Ferrite Bead, Fair Rite, 2743019447
10 µF, 50 V, Electrolytic Capacitor, ECEV1HV100R Panasonic
0.10 µF, B Case Chip Capacitors, CDR33BX104AKWS, Kemet
20000 pF, B Case Chip Capacitor, 200B203MCA50X, ATC
100 pF, B Case Chip Capacitors, 100B101JCA500X, ATC
47 pF, B Case Chip Capacitors, 100B470JCA500X, ATC
0.8 – 8.0 pF, Variable Capacitors, Johanson Gigatrim
4.7 pF, B Case Chip Capacitor, 100B4R7JCA500X, ATC
10 pF, B Case Chip Capacitors, 100B100JCA500X, ATC
16 pF, B Case Chip Capacitors, 100B160JCA500X, ATC
43 pF, B Case Chip Capacitor, 100B430JCA500X, ATC
7.5 pF, B Case Chip Capacitor, 100B7R5JCA500X, ATC
10 µF, 35 V, Electrolytic Capacitors, SMT, Kemet
MOTOROLA RF DEVICE DATA
LIFETIME BUY
B1 – B2
C1
C2, C16
C3
C4, C13
C5, C20
C6, C15
C7
C8, C9
C10, C11
C12
C14
C17, C18, C19
L1, L2
R1
R2
R3
Z1, Z11
Z2, Z10
Z3
Z4
Z5
Z6
Z7
Z8
5 Turns, #24 AWG, 0.059″ OD
12 Ω, 1/4 Watt Carbon
4.7 MΩ, 1/4 Watt Carbon
16 kΩ, 1/4 Watt Carbon
0.150″ x 0.220″ Microstrip
0.410″ x 0.220″ Microstrip
0.160″ x 0.630″ Microstrip
0.160″ x 0.630″ Microstrip
0.098″ x 0.630″ Microstrip
0.098″ x 0.630″ Microstrip
0.210″ x 0.220″ Microstrip
0.050″ x 0.220″ Microstrip
Figure 1. MRF187 Schematic
MRF187 MRF187R3 MRF187SR3
3
LAST SHIP 31JAN05
LAST ORDER 31JUL04
. . 6 * 6 7 /01 6 & "
. %&% 8,- &
. . #$
.
.
%
( *+ %,-"
.
. .
.
.
2
6 * 6 7
( 6 %,. %&%
8,- &
2
2
2
2 2 2 2
2
34 &"
2
2
2
2
/01 &" 7
1; 9!:9
7
7
7
6 ( 6 %,. %&%
8,- &
7
2
Figure 4. Class AB Parameters
versus Input Power
7
7
η
#$ !"
/01
#$
1; 9!:9
.
Figure 3. Intermodulation Distortion Products
versus Output Power
#$ !"
9! 9!:9
.
Figure 2. Class AB Broadband Circuit Performance
6 * 6 7
( 6 %,. %&%
8,- &
2
/01 &" Figure 5. Power Gain versus Output Power
.5 .5 .5
6 ( 6 %,. %&%
8,- &
7
7
.5
7
.5
7
7
7
7
.5
2
2
/01 &" Figure 6. Intermodulation Distortion
versus Output Power
MRF187 MRF187R3 MRF187SR3
4
LAST SHIP 31JAN05
.
MOTOROLA RF DEVICE DATA
LAST ORDER 31JUL04
. %%& !'"
η
&& !"
%%& !'"
%%& !'"
/01 &" η + <"
LIFETIME BUY
η + <" #$ !"
TYPICAL CHARACTERISTICS
LAST SHIP 31JAN05
( 6 %,34
/6
Ω
LIFETIME BUY
( 6 %,=
%,-
6
f
MHz
Zin
Zin
Ω
ZOL*
Ω
865
1.04 + j1.51
1.13 – j0.091
880
1.03 + j1.39
1.20 – j0.176
895
1.03 + j1.29
1.28 – j0.242
= Complex conjugate of source impedance.
ZOL* =
/1:>
* 6 7 /01 6 Complex conjugate of the optimum load
impedance at a given output power, voltage,
IMD, bias current and frequency.
= ?@$ ';/$:4 A@$:! /4 19@!:/(($ A:1?::4 B@34 /01#01
#/?:9 !9@34 :((3'3:4'C @4! 341:97/!0D@13/4 !3$1/913/42
Figure 7. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF187 MRF187R3 MRF187SR3
5
LAST ORDER 31JUL04
%,-
LIFETIME BUY
&
,
Figure 8. MRF187 Populated PC Board Layout Diagram
MRF187 MRF187R3 MRF187SR3
6
LAST ORDER 31JUL04
&
,
LAST SHIP 31JAN05
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
B
G
Q
AAA
2X
%
%
&>
2 %& &
+ 2%. 2
2 %&> ,2
2 2 %& , & %& 2 2 " +
% E +2
%
B
K
(FLANGE)
D
AAA
%
%
%
M
AAA
N
R
(INSULATOR)
%
%
%
'''
%
%
S
(LID)
'''
(LID)
%
%
%
@@@
%
%
%
(INSULATOR)
%
H
C
T
A
A
CASE 465–06
ISSUE F
NI–780
MRF187
(FLANGE)
4X U
(FLANGE)
&>
2 %& &
+ 2%. 2
2 %&> ,2
2 2 %& , & %& 2 2 " +
% E +2
4X Z
(LID)
B
2X
B
K
(FLANGE)
D
AAA
%
%
%
N
(LID)
'''
M
R
%
%
%
%
'''
%
%
S
(INSULATOR)
AAA
%
%
@@@
%
%
(LID)
%
(INSULATOR)
%
H
C
E
A
F
T
A
(FLANGE)
MOTOROLA RF DEVICE DATA
2
2 2
2
2 2
2
2
2
2 2
2 2&
2
2
2
2
2
2
2
2
2
2
2 2
2 2
2 2 2 &+ >
2 2 2 &
F
E
2
2
2
2
2 2 2
2
2
2
2
2
2 &
2
2
2 2 2
2
2
2
2 2 2
2
2
2
2
2 2 CASE 465A–06
ISSUE F
NI–780S
MRF187SR3
2
2 2
2
2 2 2
2
2
2
2
2
2
2
2 2 2
2
2
2
2
2
2
2
...
2
...
2
2
2 2 2
2
2
2
2 2
2
2
2
2 2
2 2
2
2
2
2
2
2
2
2 2
2 2
...
2
...
2
2 2 2 &+ >
2 2 2 &
MRF187 MRF187R3 MRF187SR3
7
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E Motorola, Inc. 2002.
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MRF187 MRF187R3 MRF187SR3
8
◊
MOTOROLA RF DEVICE DATA
MRF187/D
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