Microsemi JANTX2N3501 Npn silicon transistor Datasheet

TECHNICAL DATA
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/366
Devices
2N3498
2N3498L
2N3499
2N3499L
2N3500
2N3500L
Qualified Level
JAN
JANTX
JANTXV
JANS
2N3501
2N3501L
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = 250C (1)
@ TC = 250C (2)
Operating & Storage Junction Temp. Range
Symbol
2N3498*
2N3499*
2N3500*
2N3501*
VCEO
VCBO
VEBO
IC
100
100
6.0
500
150
150
6.0
300
PT
TJ, Tstg
1.0
5.0
-55 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
W
0
C
TO-5*
2N3498L, 2N3499L
2N3500L, 2N3501L
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance:
Junction-to-Case
Symbol
Max.
35
Unit
RθJC
0
C/W
175
Junction-to-Ambient
RθJA
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly 5.71 W/0C for TA > 250C
2) Derate linearly 28.6 W/0C for TC > 250C
TO-39* (TO-205AD)
2N3498, 2N3499
2N3500, 2N3501
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
V(BR)CEO
100
150
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Collector-Base Cutoff Current
VCB = 50 Vdc
VCB = 75 Vdc
VCB = 100 Vdc
VCB = 150 Vdc
Emitter-Base Cutoff Current
VEB = 4.0 Vdc
VEB = 6.0 Vdc
2N3498, 2N3499
2N3500, 2N3501
2N3498, 2N3499
2N3500, 2N3501
2N3498, 2N3499
2N3500, 2N3501
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Vdc
ICBO
50
50
10
10
ηAdc
ηAdc
µAdc
µAdc
IEBO
25
10
ηAdc
µAdc
120101
Page 1 of 2
2N3498, L, 2N3499, L, 2N3500, L, 2N3501, L JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
hFE
20
35
25
50
35
75
40
100
15
20
15
20
Max.
Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 300 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 300 mAdc, IB = 30 mAdc
IC = 150 mAdc, IB = 15 mAdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 300 mAdc, IB = 30 mAdc
IC = 150 mAdc, IB = 15 mAdc
2N3498, 2N3500
2N3499, 2N3501
2N3498, 2N3500
2N3499, 2N3501
2N3498, 2N3500
2N3499, 2N3501
2N3498, 2N3500
2N3499, 2N3501
2N3500
2N3501
2N3498
2N3499
All Types
2N3498, 2N349
2N3500, 2N3501
All Types
2N3498, 2N3499
2N3500, 2N3501
120
300
VCE(sat)
0.2
0.6
0.4
Vdc
VBE(sat)
0.8
1.4
1.2
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
hfe
2N3498, 2N3499
2N3500, 2N3501
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
1.5
8.0
Cobo
10
8.0
pF
Cibo
80
pF
on
115
ηs
off
1150
ηs
SWITCHING CHARACTERISTICS
Turn-On Time
VEB = 5 Vdc; IC = 150 mAdc; IB1 = 15 mAdc
Turn-Off Time
IC = 150 mAdc; IB1 = IB2 = -15 mAdc
t
t
SAFE OPERATING AREA
DC Tests
TC = +250C, tr ≥ 10 ηs; 1 Cycle, t = 1.0 s
Test 1
VCE = 10 Vdc, IC = 500 mAdc
2N3498, 2N3499
VCE = 16.67 Vdc, IC = 300 mAdc
2N3500, 2N3501
Test 2
VCE = 50 Vdc, IC = 100 mAdc
All Types
Test 3
VCE = 80 Vdc, IC = 40 mAdc
All Types
Clamped Switching
TA = +250C
Test 1
IB = 85 mAdc, IC = 500 mAdc
2N3498, 2N3499
IB = 50 mAdc, IC = 300 mAdc
2N3500, 2N3501
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
Similar pages