INCHANGE Semiconductor MBR16200CT Schottky Barrier Rectifier FEATURES ·Low power loss ,high efficiency ·Low Forward Voltage ·High surge capacity ·Pb-Free Packages are Available ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for in low voltage,high frequency inverters，free wheeling,and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 200 V RMS Reverse Voltag 140 V IF(AV) Average Rectified Forward Current (Rated VR) 16 A IFSM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz) 150 A Junction Temperature -55~150 ℃ Storage Temperature Range -65~175 ℃ VRRM VRWM VR VR(RMS) TJ Tstg PARAMETER isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor MBR16200CT Schottky Barrier Rectifier THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER MAX UNIT 2.0 ℃/W MAX UNIT IF= 8A ; TC= 25℃ 0.9 V Rated DC Voltage, TC= 25℃ 0.05 20 mA Thermal Resistance,Junction to Case ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER VF Maximum Instantaneous Forward Voltage IR Maximum Instantaneous Reverse Current isc website：www.iscsemi.com CONDITIONS Rated DC Voltage, TC= 125℃ 2 isc & iscsemi is registered trademark