Infineon BSC037N025SG Optimosâ®2 power-transistor Datasheet

BSC037N025S G
OptiMOS®2 Power-Transistor
Product Summary
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
V DS
25
V
R DS(on),max
3.7
mΩ
ID
100
A
1
• Qualified according to JEDEC for target applications
• Logic level / N-channel
• Excellent gate charge x R DS(on) product (FOM)
PG-TDSON-8
• Very low on-resistance R DS(on)
• Superior thermal resistance
• Avalanche rated
• dv /dt rated
• Pb-free lead plating; RoHS compliant
Type
Package
Marking
BSC037N025S G
PG-TDSON-8
37N025S
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
100
T C=100 °C
68
T A=25 °C,
R thJA=45 K/W 2)
I D,pulse
T C=25 °C3)
200
Avalanche energy, single pulse
E AS
I D=50 A, R GS=25 Ω
350
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=150 °C
6
Gate source voltage
V GS
Power dissipation
P tot
T A=25 °C,
R thJA=45 K/W 2)
Operating and storage temperature
T j, T stg
Rev. 0.94
mJ
kV/µs
±20
V
69
W
2.8
-55 ... 150
IEC climatic category; DIN IEC 68-1
A
21
Pulsed drain current
T C=25 °C
Unit
°C
55/150/56
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2006-05-10
BSC037N025S G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
1.8
minimal footprint
-
-
62
6 cm2 cooling area2)
-
-
45
25
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance,
R thJA
junction - ambient
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=50 µA
1.2
1.6
2
Zero gate voltage drain current
I DSS
V DS=25 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=25 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=50 A
-
4.8
6
mΩ
V GS=10 V, I D=50 A
-
3.1
3.7
-
1.2
-
Ω
46
92
-
S
Gate resistance
RG
Transconductance
g fs
1)
|V DS|>2|I D|R DS(on)max,
I D=50 A
J-STD20 and JESD22
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3
Rev. 0.94
page 2
2006-05-10
BSC037N025S G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
2750
3660
-
1050
1400
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
130
195
Turn-on delay time
t d(on)
-
6.9
10
Rise time
tr
-
6
9
Turn-off delay time
t d(off)
-
27
41
Fall time
tf
-
5
8
Gate to source charge
Q gs
-
8
11
Gate charge at threshold
Q g(th)
-
4
6
Gate to drain charge
Q gd
-
6
9
Switching charge
Q sw
-
10
14
Gate charge total
Qg
-
22
29
Gate plateau voltage
V plateau
-
3.1
-
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 5 V
-
19
26
Output charge
Q oss
V DD=15 V, V GS=0 V
-
23
30
-
-
50
-
-
200
V GS=0 V, V DS=15 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=25 A, R G=2.7 Ω
pF
ns
Gate Charge Characteristics 4)
V DD=15 V, I D=25 A,
V GS=0 to 5 V
nC
V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=50 A,
T j=25 °C
-
0.85
1
V
Reverse recovery charge
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
-
12
nC
4)
T C=25 °C
A
See figure 16 for gate charge parameter definition
Rev. 0.94
page 3
2006-05-10
BSC037N025S G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
70
120
60
100
50
40
I D [A]
P tot [W]
80
60
30
40
20
20
10
0
0
0
40
80
120
160
0
40
T C [°C]
80
120
160
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
101
limited by on-state
resistance
1 µs
10 µs
100 µs
DC
I D [A]
100
Z thJC [K/W]
102
0.5
0.2
0.1
0.05
1 ms
101
10-1
0.02
0.01
single pulse
100
10
10-2
-1
10
0
10
1
10
2
V DS [V]
Rev. 0.94
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2006-05-10
BSC037N025S G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
200
12
3.2 V
3.4 V
3.7 V
10 V
4.5 V
10
160
120
R DS(on) [mΩ]
8
I D [A]
4V
80
3.7 V
4V
6
4.5 V
4
10 V
3.4 V
40
2
3.2 V
3V
2.8 V
0
0
0
1
2
3
0
50
V DS [V]
100
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
125
160
100
120
75
I D [A]
g fs [S]
200
80
50
40
25
150 °C
25 °C
0
0
0
1
2
3
4
5
Rev. 0.94
0
25
50
75
I D [A]
V GS [V]
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2006-05-10
BSC037N025S G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=50 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
7
2.4
6
2
500 µA
5
4
V GS(th) [V]
R DS(on) [mΩ]
1.6
98 %
typ
3
50 µA
1.2
0.8
2
0.4
1
0
0
-60
-10
40
90
140
190
-60
-10
40
90
140
190
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
10000
25 °C
Ciss
Coss
150 °C
102
1000
I F [A]
C [pF]
10
3
150 °C, 98%
25 °C, 98%
Crss
10
2
101
100
100
10
0
10
20
30
V DS [V]
Rev. 0.94
0
0.5
1
1.5
2
V SD [V]
page 6
2006-05-10
BSC037N025S G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=25 A pulsed
parameter: T j(start)
parameter: V DD
100
12
15 V
10
100 °C
6V
25 °C
24 V
125 °C
V GS [V]
I AV [A]
8
10
6
4
2
1
0
1
10
100
1000
0
10
20
30
40
50
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
28
V GS
Qg
V BR(DSS) [V]
26
24
V g s(th)
22
Q g(th)
Q sw
Q gs
20
-60
-10
40
90
140
Q g ate
Q gd
190
T j [°C]
Rev. 0.94
page 7
2006-05-10
BSC037N025S G
Package Outline
P-TDSON-8
P-TDSON-8: Outline
Footprint
Dimensions in mm
Rev. 0.94
page 8
2006-05-10
BSC037N025S G
Package Outline
P-TDSON-8: Tape
Dimensions in mm
Rev. 0.94
page 9
2006-05-10
BSC037N025S G
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Rev. 0.94
page 10
2006-05-10
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