FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • • Low gate charge (16.2nC typical). Applications • Fast switching speed. • • • • High performance trench technology for extremely low RDS(ON). • Small footprint (38% smaller than a standard SO-8);low profile package (1 mm thick); power handling capability similar to SO-8. Load switch Motor driving Power Management D2 4.5 A, 20 V. RDS(ON) = 0.022 Ω @ VGS = 4.5 V RDS(ON) = 0.028 Ω @ VGS = 2.5 V. D2 D1 D1 S2 TM SuperSOT -8 G1 S1 4 6 3 7 2 8 1 G2 Absolute Maximum Ratings Symbol 5 TA = 25°C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±8 V ID Drain Current 4.5 A - Continuous (Note 1a) - Pulsed 20 PD Power Dissipation for Single Operation TJ, Tstg Operating and Storage Junction Temperature Range (Note 1a) 0.8 W -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 156 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity .8305 FDR8305N 13’’ 12mm 3000 units 1999 Fairchild Semiconductor Corporation FD8305N Rev. C FD8305N November 1999 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V 1 µA IGSSF Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 8 V, VDS = 0 V 100 nA VGS = -8 V, VDS = 0 V -100 nA IGSSR On Characteristics 20 V 14 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C RDS(on) Static Drain-Source On-Resistance ID(on) On-State Drain Current VGS = 4.5 V, ID = 4.5 A VGS=4.5 V, ID=4.5 A, TJ=125°C VGS = 2.5 V, ID = 4 A VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance VDS = 4.5 V, ID = 4.5 A 24 S VDS = 10 V, VGS = 0 V, f = 1.0 MHz 1600 pF 0.4 0.85 1.5 -3 0.015 0.026 0.020 V mV/°C 0.022 0.040 0.028 10 Ω A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge 380 pF 200 pF (Note 2) VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 12 VDS = 10 V, ID = 4.5 A, VGS = 4.5 V 22 ns 15 27 ns 35 55 ns 18 30 ns 16.2 23 nC 2.5 nC 5.5 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.67 A (Note 0.65 0.67 A 1.2 V 2) Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. Both devices are assumed to be operating and sharing the dissipated heat energy equally. O 156 C/W on a minimum mounting pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FD8305N Rev. C FD8305N Electrical Characteristics FD8305N Typical Characteristics 1.8 VGS = 4.5V ID, DRAIN CURRENT (A) 3.0V 16 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 2.0V 2.5V 12 8 1.5V 4 1.6 VGS = 2.0V 1.4 2.5V 1.2 3.0V 3.5V 0 0.4 0.8 1.2 1.6 0 2 4 8 12 16 20 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. 1.6 0.06 ID = 4.5A VGS = 4.5V ID = 2.3A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V 0.8 0 1.4 1.2 1 0.8 0.6 0.05 0.04 o TA = 125 C 0.03 0.02 o TA = 25 C 0.01 0 -50 -25 0 25 50 75 100 125 150 1 2 o TJ, JUNCTION TEMPERATURE ( C) 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 20 o TA = -55 C IS, REVERSE DRAIN CURRENT (A) 16 VGS = 0V o 25 C VDS = 5V ID, DRAIN CURRENT (A) 4.0V 1 125oC 12 8 4 10 1 o TA = 125 C o 25 C 0.1 -55oC 0.01 0.001 0.0001 0 0.5 1 1.5 2 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FD8305N Rev. C (continued) 5 2500 ID = 4.5A f = 1MHz VGS = 0 V VDS = 5V 10V 4 2000 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) FD8305N Typical Characteristics 15V 3 2 1 CISS 1500 1000 500 COSS CRSS 0 0 4 8 12 16 0 20 0 4 Qg, GATE CHARGE (nC) 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 50 10 o POWER (W) 1 1s 10s DC VGS= 4.5 V SINGLE PULSE o RθJA=156 C/W 0.1 RθJA=156 C/W 40 10ms 100ms o TA=25 C 30 20 10 o TA=25 C 0 0.01 0.1 1 10 100 0.0001 0.001 VDS, DRAIN-SOURCE VOLTAGE (V) 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 10. Single Pulse Maximum Power Dissipation. Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE 1 TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) SINGLE PULSE 100µs 1ms RDS(ON) LIMIT 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0.5 R θJA (t) = r(t) * R θJA R θJA = 156 °C/W 0.2 0.1 0.05 P(pk) 0.02 t1 0.01 Single Pulse 0.002 0.001 0.0001 0.001 t2 TJ - TA = P * R JA (t) θ Duty Cycle, D = t 1/ t 2 0.01 0.1 1 10 100 300 t1 , TIME (sec) FD8305N Rev. C SuperSOTTM-8 Tape and Reel Data and Package Dimensions SSOT-8 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Anti static Cover Tape SSOT-8 parts are shipped in tape. The carrier tape is made from a di ssipat ive (carbo n filled) po ly carbon ate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film , adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped w ith 3,000 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 unit s per 7" or 177cm diameter reel. This and some other options are further described in the Packagin g Information table. These full reels are in di vidu ally barcod e labeled and placed inside a standard intermediate box (ill ustrated in figure 1.0) made of recyclable corrugated brow n paper. One box contains two reels maximum. And t hese boxes are placed ins ide a barcode labeled shipp ing bo x whic h comes in di fferent sizes depend in g on t he nu mber of parts shippe d. Static Dissi pat ive Emboss ed Carrier Tape F852 831N F852 831N F852 831N F852 831N F852 831N Pin 1 SSOT-8 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Standard (no f l ow c ode ) TNR D84Z SSOT-8 Unit Orientation TNR 3,000 500 13" D ia 7" Dia 343x64x343 184x187x47 Max qty per Box 6,000 1,000 Weight per unit (gm) 0.0416 0.0416 Weight per Reel (kg) 0.5615 0.0980 343mm x 342mm x 64mm Intermediate box for Standar d and L99Z Opti ons Note/Comments F63TNR Label F63TNR Label F63TNR Labe l sa mpl e 184mm x 187mm x 47mm Pizza Box fo r D84Z Option F63TNR Label SSOT-8 Tape Leader and Trailer Configuration: Figur e 2.0 LOT: CBVK741B019 QTY: 3000 FSID: FDR835N SPEC: D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F (F63TNR)3 Carrier Tape Cover Tape Components Traile r Tape 300mm mi nimum or 38 empty pockets Lead er Tape 500mm mi nimum or 62 empty poc kets August 1999, Rev. C SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued SSOT-8 Embossed Carrier Tape Configuration: Figur e 3.0 P0 D0 T E1 F K0 Wc W E2 B0 Tc A0 D1 P1 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 SSOT-8 (12mm) 4.47 +/-0.10 5.00 +/-0.10 W 12.0 +/-0.3 D0 D1 E1 E2 1.55 +/-0.05 1.50 +/-0.10 1.75 +/-0.10 F 10.25 mi n 5.50 +/-0.05 P1 P0 8.0 +/-0.1 4.0 +/-0.1 K0 T Wc 1.37 +/-0.10 0.280 +/-0.150 9.5 +/-0.025 Notes : A0, B0, and K0 dimensions are deter mined with r espec t to t he EIA/Jedec RS-481 rotationa l and lateral movement requi remen ts (see sketches A, B, and C). 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Si de or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SSOT-8 Reel Configuration: Figur e 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) 12mm 7" Dia 7.00 177.8 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 5.906 150 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 – 0.606 11.9 – 15.4 12mm 13" Dia 13.00 330 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 7.00 178 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 – 0.606 11.9 – 15.4 1998 Fairchild Semiconductor Corporation July 1999, Rev. C SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued SuperSOT-8 (FS PKG Code 34, 35) 1:1 Scale 1:1 on letter size paper Di mensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0416 September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ISOPLANAR™ MICROWIRE™ POP™ PowerTrench QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. D