TriQuint AGR19125EU 125 w, 1930 mhz-1990 mhz, pcs ldmos rf power transistor Datasheet

AGR19125E
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
Table 1. Thermal Characteristics
The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS)
RF power field effect transistor (FET) suitable for
personal communication service (PCS)
(1930 MHz—1990 MHz), time-division multiple
access (TDMA), and single-carrier or multicarrier
class AB power amplifier applications.
AGR19125EU (unflanged)
AGR19125EF (flanged)
Figure 1. Available Packages
Features
Typical 2 carrier, N-CDMA performance for
VDD = 28 V, IDQ = 1250 mA, F1 = 1958.75 MHz,
F2 = 1961.25 MHz, IS-95 (pilot, paging, sync,
traffic channels 8—13) 1.2288 MHz channel
bandwidth (BW). Adjacent channels measured
over a 30 kHz BW at F1 – 0.885 MHz and
F2 + 0.885 MHz. Intermodulation distortion
products measured over a 1.2288 MHz BW at
F1 – 2.5 MHz and F2 + 2.5 MHz. Peak/Average
(P/A) = 9.72 dB at 0.01% probability on CCDF:
— Output power: 24 W.
— Power gain: 15 dB.
— Efficiency: 24%.
— ACPR: –48 dBc.
— IMD3: –34 dBc.
— Return loss: –10 dB.
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand a 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1960 MHz, 125 W continuous wave (CW) output power.
Large signal impedance parameters available.
Parameter
Thermal Resistance,
Junction to Case:
AGR19125EU
AGR19125EF
Sym
Value
Unit
Rı JC
Rı JC
0.5
0.5
°C/W
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Total Dissipation at TC = 25 °C:
AGR19125EU
AGR19125EF
Derate Above 25 °C:
AGR19125EU
AGR19125EF
Operating Junction Temperature
Storage Temperature Range
Sym Value Unit
65
Vdc
VDSS
VGS –0.5, +15 Vdc
PD
PD
350
350
W
W
—
—
TJ
2.0
2.0
200
W/°C
W/°C
°C
TSTG –65, +150 °C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR19125E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. PEAK
Agere Devices
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be
observed.
AGR19125E
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Drain-source Breakdown Voltage (VGS = 0, ID = 400
200 µA)
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V)
V(BR)DSS
IGSS
IDSS
65
—
—
—
—
—
—
4
200
12
Vdc
µAdc
µAdc
Forward Transconductance (VDS = 10 V, ID = 1 A)
Gate Threshold Voltage (VDS = 10 V, ID = 400 µA)
Gate Quiescent Voltage (VDS = 28 V, ID = 1200 mA)
Drain-source On-voltage (VGS = 10 V, ID = 1 A)
GFS
VGS(TH)
VGS(Q)
VDS(ON)
—
—
—
—
9
—
3.8
0.08
—
4.8
—
—
S
Vdc
Vdc
Vdc
Off Characteristics
On Characteristics
Table 5. RF Characteristics
Parameter
Symbol
Min
Typ
Max
U nit
CRSS
—
3.0
—
pF
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
(This part is internally matched on both the input and output.)
Supplied
Test Fixture)
Functional Tests (in
(in Agere
Systems
Supplied Test Fixture)
Common-source Amplifier Power Gain*
Drain Efficiency*
Third-order Intermodulation Distortion*
(IMD3 measured over 1.2288 MHz BW @ f1 – 2.5 MHz
and f2 + 2.5 MHz)
Adjacent Channel Power Ratio*
(ACPR measured over BW of 30 kHz @ f1 – 0.885 MHz
and f2 + 0.885 MHz)
Input Return Loss*
Power Output, 1 dB Compression Point
(VDD = 28 V, fC = 1960.0 MHz)
Output Mismatch Stress
(VDD = 28 V, POUT = 125 W (CW), IDQ = 1250 mA, fC = 1960.0 MHz
VSWR = 10:1; [all phase angles])
GPS
η
IM3
14
—
—
15
24
–34
—
—
—
dB
%
dBc
ACPR
—
–48
—
dBc
IRL
P1dB
—
—
–10
125
—
—
dB
W
* IS-95 N-CDMA P/A = 9.72 dB at 0.01% CCDF, f1 = 1958.75 MHz, and f2 = 1961.25 MHz.
VDD = 28 Vdc, IDQ = 1250 mA, and POUT = 24 W avg.
ψ
No degradation in output power.
AGR19125E
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Test Circuit Illustrations for AGR19125E
FB1
VGG
R1
VDD
R3
R2
+
C2
C3
C4
C5
Z7
C6
C7
C8
RF INPUT
C1
Z2
Z3
Z4
Z5
C9
C10
C11
C12
C13 C14
C15
Z6
Z8
Z1
+
+
+
2
1
3
Z9
Z10
PINS:
1. DRAIN
2. GATE
3. SOURCE
DUT
Z11
C16
C17
Z13
RF
OUTPUT
A. Schematic
Parts List:
? Microstrip Line:
Z1 0.785 in. x 0.065 in.
Z2 0.205 in. x 0.065 in.
Z3 0.070 in. x 0.255 in.
Z4 0.378 in. x 0.065 in.
Z5 0.177 in. x 0.860 in.
Z6 0.050 in. x 0.247 in.
Z7 0.050 in. x 0.593 in.
Z8 0.500 in. x 1.030 in.
Z9 0.323 in. x 0.185 in.
Z10 0.465 in. x 0.115 in.
Z11 0.075 in. x 0.065 in.
Z12 0.252 in. x 0.065 in.
®
? ATC chip capacitor:
C1 10 pF 100B100JW500X
C5, C14, C15: 5.6 pF100B5R6BW500X
C9 6.8 pF 100B6R8JW500X
C10 1.2 pF 100B1R2BW500X
C16: 15 pF 100B150JW500X.
®
? Sprague tantalum surface-mount chip capacitor:
C2, C4, C11, C12: 22 µF, 35 V.
®
? Kemet 1206 size chip capacitor:
C6, C13: 0.1 µF C1206104K5RAC7800.
®
? Murata 0805 size chip capacitor:
C8 0.01 µF GRM40X7R103K100AL.
®
? Johanson Giga-Trim variable capacitor:
C17 0.6 pF to 4.5 pF 27271SL.
? 1206 size chip capacitor: C3, C7: 22000 pF.
? 1206 size chip resistor: R1 1 kΩ; R2 560 kΩ; R3 4.7 Ω.
®
? Fair-Rite ferrite bead: FB1 2743019447.
®
? Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5.
B. Component Layout
Figure 2. AGR19125E Test Circuit
AGR19125E
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
U CT
0.6
90
IN D
0.
8
0.1
0.4
20
50
20
10
5.0
4.0
3.0
2.0
1.6
1.8
1.4
1.2
50
1.0
0.9
0.7
0.8
0.5
0.6
0.4
0.3
0.2
0.1
0.2
20
ZL
o)
jB/ Y
E (NC
0
1.
A
PT
CE
US
ES
DU
IV
CT
IN
0
1.8
2.
-110
0.11
-100
-90
0.13
0.36
0.12
0
-12
0.1
-
06
-70
0.
07
30
-1
43
0.
8
0.0
2
0.4
9
0.0
1
0.4
0.4
0.39
0.38
F
0.37
0.6
1.6
0.14
0.35
-60
1.4
1.2
5
-4
-80
0.8
1.0
0
-4
0.15
0.9
-70
-
6
4
-75
R
0.7
0.1
0.3
50
35
5
3
-60
-5
7
VE
(-j
0
14
Z
X/
0.1
0.3
CA P
AC
I TI
T
5
,O
o)
0.2
-30
32
CE
CO
M
0
-65 .5
18
0.
RE
AC
TA
N
EN
0.
0
-5
-25
0.
PO
N
0.
0.4
0.0
0.6
0
3.
-20
31
0.
19
0.
44
0.8
0
-15
4.0
4
0.0
0
-15 -80
0
0.4
0
1.
8
0.3
.45
2
0.2
0.2
0.2
0
-4
4
0.
.29
ZS
f1
1
-30
0.3
f3
5.0
-85
8
0.
0.2
0.2
6
0.6
-10
0.48
f1
0.4
-20
D<
RD L OA
TOW A
7
TH S
0.4
-170
EN G
V EL
A
W
<Ð
-90
-160
0.2
f3
10
Ð
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
50
0.49
0.25
0.2
6
0.24
0.27
0.23
0.25
0.24
0.26
0.23
0.27
REFL ECTI ON COEFFI CI EN T I N D EG
REES
L E OF
ANG
I SSI ON COEFFI CI EN T I N
TRA N SM
D EGR
EES
10
0.1
Z0 = 10 Ω
L E OF
ANG
0.0 Ð > W A V EL E
N GTH
S TOW
A RD
0.0
0.49
0.48
± 180
170
Typical Performance Characteristics
MHz (f )
1930 (f1)
1960 (f2)
1990 (f3)
ZL Ω
ZS Ω
(Complex Source Impedance) (Complex Optimum Load Impedance)
4.22 – j6.13
1.63 – j1.42
4.02 – j5.80
1.60 – j1.19
3.91 – j5.55
1.74 – j1.18
GATE (2)
ZS
DRAIN (1)
ZL
SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
AGR19125E
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
0.0
120.0
-5.0
POUT
100.0
IRL, INPUT RETURN LOSS
(dB)S
POUT, OUTPUT POWER (W),
EFFICIENCY (%)S
140.0
-10.0
80.0
-15.0
60.0
IRL
-20.0
40.0
0.0
-25.0
EFFICIENCY
20.0
0.00
1.00
2.00
3.00
4.00
5.00
-30.0
6.00
PIN, INPUT POWER (W)S
TEST CONDITIONS:
VDD = 28 V, IDQ = 1250 mA, F = 1960 MHz.
Figure 4. Output Power and Efficiency vs. Input Power
16.00
Gps, POWER GAIN (dB)S
IDQ = 1500 mA
15.00
IDQ = 1250 mA
14.00
IDQ = 900 mA
13.00
12.00
1.00
10.00
100.00
POUT, OUTPUT POWER (W)S
TEST CONDITIONS:
VDD = 28 V, F = 1960 MHz, CW MEASUREMENT.
Figure 5. Power Gain vs. Output Power
1000.00
AGR19125E
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
Gps, POWER GAIN (dB)S
16
IDQ = 1500 mA
15
IDQ = 1250 mA
IDQ = 900 mA
14
13
12
10
100
TEST CONDITIONS:
VDD = 28 V, F = 1960 MHz, 100 kHz TONE SPACING.
1000
POUT, OUTPUT POWER (W) PEPS
Figure 6. Two-Tone Gain vs. Output Power
45
5
EFFICIENCY
0
35
-5
30
25
IRL
20
Gps
15
-25
-30
IMD3
5
1880
-15
-20
10
0
-10
1900
1920
1940
1960
1980
2000
2020
f, FREQUENCY (MHz)S
TEST CONDITIONS:
VDD = 28 V, IDQ = 1250 mA, POUT = 125 W (PEP), 100 kHz TONE SPACING.
Figure 7. Two-Tone Broadband Performance
-35
2040
IRL, INPUT RETURN LOSS (dB),
IMD3,S INTERMODULATION
DISTORTIONS (dBc)S
Gps, POWER GAIN (dB), DRAINS
EFFICIENCY (%)S
40
AGR19125E
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
IMD, INTERMODULATION DISTORTION (dBc)S
Typical Performance Characteristics (continued)
IMD3
-25
-35
IMD5
IMD7
-45
-55
100
1000
10000
100000
TONE SPACING (kHz)S
TEST CONDITIONS:
VDD = 28 V, F = 1960 MHz, IDQ = 1250 mA, POUT = 125 W (PEP).
44
5
43
0
42
-5
EFFICIENCY
41
-10
40
-15
39
-20
38
37
36
-25
IMD3
24
25
-30
26
27
28
29
30
IMD3, INTERMODULATIONS
DISTORTION (dBc)S
DRAIN EFFICIENCY (%)S
Figure 8. Two-Tone Intermodulation Products vs. Tone Spacing
-35
VDD, DRAIN SUPPLY (V)S
TEST CONDITIONS:
F = 1960 MHz, IDQ = 1250 mA, POUT = 125 W (PEP), 100 kHz TONE SPACING.
Figure 9. Two-Tone Intermodulation Distortion and Efficiency vs. Drain Supply
AGR19125E
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
IMD3, THIRD ORDER INTERMODULATIONS
DISTORTION (dBc)S
-10
-15
-20
-25
IDQ = 900 mA
-30
-35
-40
IDQ = 1250 mA
-45
IDQ = 1500 mA
-50
-55
-60
10
100
1000
POUT, OUTPUT POWER (W) PEPS
TEST CONDITIONS:
VDD = 28 V, F = 1960 MHz, 100 kHz TONE SPACING.
Figure 10. Third Order Intermodulation Distortion vs. Output Power
0.0
50.0
45.0
EFFICIENCY
40.0
-20.0
3rd ORDER
35.0
-30.0
30.0
5th ORDER
-40.0
25.0
-50.0
20.0
-60.0
7th ORDER
15.0
-70.0
-80.0
10.0
1.00
10.00
100.00
5.0
1000.00
Pout, OUTPUT POWER (WATTS) PEP
TEST CONDITIONS:
VDD = 28 V, IDQ = 1250 mA, F = 1960 MHz, 100 kHz TONE SPACING.
Figure 11. Intermodulation Distortion Products vs. Output Power
DRAIN EFFICIENCY (%)S
IMD, INTERMODULATION DISTORTION (dBc)S
-10.0
AGR19125E
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
40.00
0.0
-10.0
EFFICIENCY
30.00
-20.0
IMD3
25.00
20.00
-30.0
Gps
-40.0
15.00
-50.0
10.00
ACPR
5.00
0.00
1.00
IMD3 (dBc), ACPR (dBc)S
Gps, POWER GAIN (dB)
DRAINSEFFICIENCY (%)
S
35.00
-60.0
-70.0
100.00
10.00
POUT, OUTPUT POWER (W)S
TEST CONDITIONS:
VDD = 28 V, IDQ = 1250 mA, F1 = 1960 MHz, F2 = 1962.5 MHz.
9 IS-95 CHANNELS/CARRIER, P/A RATIO = 9.72 dB AT 0.01% PROBABILITY.
Figure 12. Two Carrier IS-95 CDMA Performance vs. Output Power
5
EFFICIENCY
25
20
-5
-15
IRL
Gps
15
10
IMD3
5
0
1880
-25
ACPR
1900
1920
1940
TEST CONDITIONS:
VDD = 28 V, IDQ = 1250 mA, POUT = 24 W, 2 CARRIERS.
2.5 MHz SPACING, P/A RATIO = 9.72 dB AT 0.01%.
1960
1980
2000
2020
-35
-45
-55
2040
f, FREQUENCY (MHz)S
Figure 13. Two Carrier CDMA (IS-95) Broadband Performance
IRL, INPUT RETURN LOSS (dB),
IMD3,S INTERMODULATION
DISTORTION, AND ACPR (dBc)S
Gps, POWER GAIN (dB), DRAINS
EFFICIENCY (%)S
30
AGR19125E
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified. Cut lead indicates drain.
AGR19125EU
PINS:
1. DRAIN
2. GATE
3. SOURCE
1
PEAK DEVICES
AGR19125EU
1
3
XXXX
3
2
2
AGR19125EF
1
PEAK DEVICES
AGR19125EF
1
3
3
XXXX
2
XXXX - 4 Digit Trace Code
PINS:
1. DRAIN
2. GATE
3. SOURCE
2
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