Dynex DCR1374SBA16 Phase control thyristor Datasheet

DCR1374SBA
DCR1374SBA
Phase Control Thyristor
Replaces February 2001 version, DS4597-5.1
DS4597-5.2 July 2001
FEATURES
■
Double Side Cooling
■
High Surge Capability
■
Low Turn-on Losses
KEY PARAMETERS
VDRM
(max)
IT(AV)
(max)
ITSM
dV/dt
dI/dt
1800V
2694A
50000A
1000V/µs
1000A/µs
APPLICATIONS
■
High Voltage Power Converters
■
DC Motor Control
■
High Voltage Power Supplies
VOLTAGE RATINGS
Part and Ordering
Number
DCR1374SBA18
DCR1374SBA16
DCR1374SBA14
DCR1374SBA12
DCR1374SBA10
DCR1374SBA08
Repetitive Peak
Voltages
VDRM and VDRM
V
1800
1600
1400
1200
1000
800
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 150mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
Outline type code: MU140
(See Package Details for further information)
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1374SBA16
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
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DCR1374SBA
CURRENT RATINGS
Tcase = 60˚C unless stated otherwise.
Parameter
Symbol
Test Conditions
Max.
Units
2694
A
Double Side Cooled
Half wave resistive load
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
4230
A
Continuous (direct) on-state current
-
3682
A
1965
A
IT
Single Side Cooled
Half wave resistive load
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
3086
A
Continuous (direct) on-state current
-
2534
A
Max.
Units
2084
A
IT
Tcase = 80˚C unless stated otherwise.
Parameter
Symbol
Test Conditions
Double Side Cooled
Half wave resistive load
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
3275
A
Continuous (direct) on-state current
-
2770
A
1500
A
IT
Single Side Cooled
Half wave resistive load
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
2350
A
Continuous (direct) on-state current
-
1875
A
IT
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DCR1374SBA
SURGE RATINGS
Parameter
Symbol
ITSM
I2t
ITSM
I2t
Surge (non-repetitive) on-state current
I2t for fusing
Test Conditions
Max.
Units
40
kA
8 x 106
A2s
50
kA
12.5 x 106
A2s
10ms half sine, Tcase = 125˚C
VR = 50% VRRM - 1/4 sine
Surge (non-repetitive) on-state current
10ms half sine, Tcase = 125˚C
I2t for fusing
VR = 0
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-h)
Tvj
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Virtual junction temperature
Test Conditions
Min.
Max.
Units
Double side cooled
DC
-
0.013
˚CW
Single side cooled
Anode DC
-
0.021
˚CW
Cathode DC
-
0.034
˚CW
Double side
-
0.003
˚CW
(with mounting compound) Single side
-
0.006
˚CW
On-state (conducting)
-
135
˚C
Reverse (blocking)
-
125
˚C
Clamping force 40.0kN
Tstg
Storage temperature range
–55
125
˚C
Fm
Clamping force
36.0
44.0
kN
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DCR1374SBA
SURGE RATINGS
Parameter
Symbol
Test Conditions
Min.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125˚C
-
150
mA
dV/dt
Max. linear rate of rise of off-state voltage
To 67% VDRM, Tj = 125˚C
-
1000
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM to 4600A
-
500
A/µs
-
1000
A/µs
IRRM/IRRM
Repetitive 50Hz
Gate source 20V, 20Ω, Non-repetitive
tr ≤ 0.5µs, Tj = 125˚C
Threshold voltage
At Tvj = 125˚C
-
0.92
V
rT
On-state slope resistance
At Tvj = 125˚C
-
0.119
mΩ
tgd
Delay time
VD = 67% VDRM, gate source 30V, 15Ω
-
1.5
ns
VT(TO)
tr = 0.5µs, Tj = 25˚C
tq
Turn-off time
IT = 800A, tp = 1ms, Tj =125˚C,
µs
3001
VR = 50V, dIRR/dt = 20A/µs,
VDR = 67% VDRM,
dVDR/dt = 20V/µs linear
IL
Latching current
Tj = 25˚C, VD = 10V
-
350
mA
IH
Holding current
Tj = 25˚C, VG–K = ∞
-
175
mA
Note 1: Typical value
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DCR1374SBA
GATE TRIGGER CHARACTERISTICS AND RATINGS
Parameter
Symbol
Test Conditions
Max.
Units
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25oC
3
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25oC
350
mA
VGD
Gate non-trigger voltage
At VDRM Tcase = 125oC
0.25
V
VFGM
Peak forward gate voltage
Anode positive with respect to cathode
30
V
VFGN
Peak forward gate voltage
Anode negative with respect to cathode
0.25
V
VRGM
Peak reverse gate voltage
5
V
IFGM
Peak forward gate current
Anode positive with respect to cathode
30
A
PGM
Peak gate power
See table fig. 5
150
W
PG(AV)
Mean gate power
10
W
-
-
CURVES
5000
8000
Measured under pulse conditions
Tj = 125˚C
4000
6000
Mean power dissipation - (W)
Instantaneous on-state current, IT - (A)
7000
5000
4000
3000
2000
3000
2000
1000
d.c.
Half wave
3 phase
6 phase
1000
0
0.5
0
1.0
1.5
Instantaneous on-state voltage, VT - (V)
Fig.2 Maximum (limit) on-state characteristics
VTM EQUATION
VTM = A + Bln (IT) + C.IT+D.√IT
2.0
0
1000
2000
3000
Mean on-state current IT(AV) - (A)
4000
Fig.3 Power dissipation
Where
A = 0.4846543
B = 8.508026 x 10–5
C = 0.05408984
D = 1.863019 x 10–3
these values are valid for Tj = 125˚C for IT 500A to 8000A
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DCR1374SBA
Tj = 25˚C
Gate trigger voltage, VGT - (V)
Tj = 125˚C
er
Low
VGD
dI/dt
5%
limi
50
it 9
W
U
lim
W
QS
1
r
ppe
20
IT
5W
1000
10
Pulse width Pulse frequency Hz
µs
50
100 400
100
150 150 150
200
150 150 125
500
150 150 100
1ms
150 100
25
10
10ms
20
-
10
Total stored charge QS - (µC)
Table gives pulse power PGM in Watts
0W
W
Conditions:
Tj = 125˚C
IT = 800A
VR = 100V
tp = 1ms - Trapezoidal
Tj = –40˚C
100
10000
t 5%
Region of certain
triggering
IRR
100
0.1
1.0
10
0.1
0.001
100
Rate of decay of on-state current dI/dt - (A/µs)
Fig.4 Stored charge
0.01
0.1
1
Gate trigger current IGT - (A)
10
Fig.5 Gate characteristics
100
0.1
Anode side cooled
50
8
7
6
25
5
I2t
4
0
1
10
ms
1
2 3 45
10
3
20 30 50
Cycles at 50Hz
Thermal impedance - (˚C/W)
75
I2t value - (A2s x 106)
Peak half sine wave on-state current - (kA)
I2t = Î2 x t
2
Double side cooled
0.01
0.001
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0.0001
0.001
0.01
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0130
0.0141
0.0170
0.0200
0.1
1
Time - (s)
Anode side
0.0210
0.0221
0.0250
0.0280
10
100
Duration
Fig.6 Surge (non-repetitive) on-state current vs time (with
50% VRRM at Tcase 125˚C)
Fig.7 Maximum (limit) transient thermal impedance junction to case (˚C/W)
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DCR1374SBA
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
Hole Ø3.6 x 2.1 approx (In both electrodes)
Cathode tab
Cathode
Ø102 max
Ø63 ± 1
33.5 ± 0.6
Ø1.5
Gate
Ø63 ± 1
Anode
Ø92 max
Nominal weight: 1100g
Clamping force: 40kN ±10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outine type code: MU140
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DCR1374SBA
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4597-4 Issue No. 5.2 July 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
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