ISSI IS61NVF12836A-6.5B2I 128k x 36 and 256k x 18 4mb, flow through (no wait) state bus sram Datasheet

IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A
ISSI
®
PRELIMINARY INFORMATION
SEPTEMBER 2005
128K x 36 and 256K x 18
4Mb, FLOW THROUGH 'NO WAIT'
STATE BUS SRAM
FEATURES
DESCRIPTION
• 100 percent bus utilization
The 4 Meg 'NLF/NVF' product family feature high-speed,
low-power synchronous static RAMs designed to provide
a burstable, high-performance, 'no wait' state, device for
networking and communications applications. They are
organized as 128K words by 36 bits and 256K words by 18
bits, fabricated with ISSI's advanced CMOS technology.
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single Read/Write control pin
• Clock controlled, registered address,
data and control
• Interleaved or linear burst sequence control using
MODE input
• Three chip enables for simple depth expansion
and address pipelining
• Power Down mode
• Common data inputs and data outputs
• CKE pin to enable clock and suspend operation
• JEDEC 100-pin TQFP, 119-ball PBGA, and 165ball PBGA packages
Incorporating a 'no wait' state feature, wait cycles are
eliminated when the bus switches from read to write, or
write to read. This device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs
into a single monolithic circuit.
All synchronous inputs pass through registers are controlled
by a positive-edge-triggered single clock input. Operations
may be suspended and all synchronous inputs ignored
when Clock Enable, CKE is HIGH. In this state the internal
device will hold their previous values.
All Read, Write and Deselect cycles are initiated by the
ADV input. When the ADV is HIGH the internal burst
counter is incremented. New external addresses can be
loaded when ADV is LOW.
• Power supply:
NVF: VDD 2.5V (± 5%), VDDQ 2.5V (± 5%)
NLF: VDD 3.3V (± 5%), VDDQ 3.3V/2.5V (± 5%)
Write cycles are internally self-timed and are initiated by
the rising edge of the clock inputs and when WE is LOW.
Separate byte enables allow individual bytes to be written.
• Industrial temperature available
A burst mode pin (MODE) defines the order of the burst
sequence. When tied HIGH, the interleaved burst sequence
is selected. When tied LOW, the linear burst sequence is
selected.
• Lead-free available
FAST ACCESS TIME
Symbol
tKQ
tKC
Parameter
Clock Access Time
Cycle Time
Frequency
6.5
6.5
7.5
133
7.5
7.5
8.5
117
Units
ns
ns
MHz
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
08/26/05
1
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A
ISSI
®
BLOCK DIAGRAM
x 36: A [0:16] or
x 18: A [0:17]
ADDRESS
REGISTER
A2-A16 or A2-A17
MODE
A0-A1
CLK
CONTROL
LOGIC
K
CKE
WRITE
ADDRESS
REGISTER
128Kx36;
256Kx18
MEMORY ARRAY
BURST
ADDRESS
COUNTER
A'0-A'1
WRITE
ADDRESS
REGISTER
K
DATA-IN
REGISTER
K
DATA-IN
REGISTER
CE
CE2
CE2
ADV
WE
BWŸX
}
CONTROL
REGISTER
K
CONTROL
LOGIC
(X= a-d, or a,b)
BUFFER
OE
ZZ
36 or 18
DQx/DQPx
2
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
08/26/05
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A
ISSI
®
Bottom View
165-Ball, 13 mm x 15mm BGA
Bottom View
119-Ball, 14 mm x 22 mm BGA
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
08/26/05
3
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A
ISSI
®
PIN CONFIGURATION — 128K X 36, 165-Ball PBGA (TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
A
NC
A
CE
BWc
BWb
CE2
CKE
ADV
NC
A
NC
B
NC
A
CE2
BWd
BWa
CLK
WE
OE
NC
A
NC
C
DQPc
NC
VDDQ
VSS
VSS
VSS
VSS
VSS
VDDQ
NC
DQPb
D
DQc
DQc
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQb
DQb
E
DQc
DQc
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQb
DQb
F
DQc
DQc
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQb
DQb
G
DQc
DQc
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQb
DQb
H
NC
NC
NC
VDD
VSS
VSS
VSS
VDD
NC
NC
ZZ
J
DQd
DQd
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
DQa
K
DQd
DQd
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
DQa
L
DQd
DQd
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
DQa
M
DQd
DQd
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
DQa
N
DQPd
NC
VDDQ
VSS
NC
NC
NC
VSS
VDDQ
NC
DQPa
P
NC
NC
A
A
NC
A1*
NC
A
A
A
NC
R
MODE
NC
A
A
NC
A0*
NC
A
A
A
A
Note: A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
Pin Name
MODE
Burst Sequence Selection
A
Address Inputs
VDD
3.3V/2.5V Power Supply
A0, A1
Synchronous Burst Address Inputs
NC
No Connect
ADV
Synchronous Burst Address Advance/
Load
DQx
Data Inputs/Outputs
DQPx
Parity Data I/O
WE
Synchronous Read/Write Control Input
V DDQ
CLK
Synchronous Clock
Isolated output Power Supply
3.3V/2.5V
CKE
Clock Enable
VSS
Ground
CE, CE2, CE2 Synchronous Chip Enable
4
BWx (x=a-d)
Synchronous Byte Write Inputs
OE
Output Enable
ZZ
Power Sleep Mode
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
08/26/05
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A
ISSI
119-PIN PBGA PACKAGE CONFIGURATION
128K x 36 (TOP VIEW)
1
2
3
4
5
6
A
VDDQ
A
A
NC
A
A
VDDQ
B
NC
CE2
A
ADV
A
CE2
NC
C
NC
A
A
VDD
A
A
NC
D
DQc
DQPc
VSS
NC
Vss
DQPb
DQb
E
DQc
DQc
VSS
CE
Vss
DQb
DQb
F
VDDQ
DQc
VSS
OE
Vss
DQb
VDDQ
G
DQc
DQc
BWc
BWb
DQb
DQb
H
DQc
DQc
VSS
WE
Vss
DQb
DQb
J
VDDQ
VDD
NC
VDD
NC
VDD
VDDQ
K
DQd
DQd
VSS
CLK
Vss
DQa
DQa
L
DQd
DQd
BWd
NC
BWa
DQa
DQa
M
VDDQ
DQd
VSS
CKE
Vss
DQa
VDDQ
N
DQd
DQd
VSS
A1 *
Vss
DQa
DQa
P
DQd
DQPd
VSS
A0 *
Vss
DQPa
DQa
R
NC
A
MODE
VDD
NC
A
NC
T
NC
NC
A
A
A
NC
ZZ
U
VDDQ
NC
NC
NC
NC
VDDQ
NC
®
NC
7
Note: A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
Pin Name
OE
Output Enable
A
Address Inputs
ZZ
Power Sleep Mode
A0, A1
Synchronous Burst Address Inputs
MODE
Burst Sequence Selection
ADV
Synchronous Burst Address Advance/
Load
VDD
Power Supply
WE
Synchronous Read/Write Control Input
VSS
Ground
CLK
Synchronous Clock
NC
No Connect
CKE
Clock Enable
DQa-DQd
Data Inputs/Outputs
CE
Synchronous Chip Select
DQPa-Pd
Parity Data I/O
CE2
Synchronous Chip Select
VDDQ
Output Power Supply
CE2
Synchronous Chip Select
BWx (x=a-d)
Synchronous Byte Write Inputs
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
08/26/05
5
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A
ISSI
165-PIN PBGA PACKAGE CONFIGURATION
®
256K x 18 (TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
A
NC
A
BWb
NC
CE2
CKE
ADV
B
NC
A
CE
CE2
NC
A
A
A
C
NC
NC
VDDQ
NC
Vss
BWa
Vss
CLK
Vss
WE
Vss
D
NC
DQb
VDDQ
VDD
Vss
Vss
Vss
OE
Vss
VDD
A
VDDQ
NC
NC
DQPa
VDDQ
NC
DQa
E
NC
DQb
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
NC
DQa
F
NC
DQb
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
NC
DQa
G
NC
DQb
VDDQ
Vss
H
NC
VDD
NC
VDD
VDD
Vss
Vss
Vss
Vss
VDD
VDD
VDDQ
NC
DQa
J
DQb
NC
VDDQ
VDD
Vss
Vss
NC
NC
ZZ
Vss
Vss
VDD
VDDQ
DQa
NC
K
DQb
NC
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
DQa
VDD
Vss
Vss
VDD
VDDQ
DQa
VDDQ
VDD
Vss
Vss
Vss
NC
NC
L
DQb
NC
VDDQ
M
DQb
NC
Vss
VDD
VDDQ
DQa
NC
N
DQPb
NC
Vss
A
NC
NC
NC
NC
Vss
NC
NC
A
A
NC
NC
A
A
NC
A1*
A0*
VDDQ
A
NC
NC
VDDQ
A
P
NC
R
MODE
NC
A
A
A
A
Note: A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
Pin Name
MODE
Burst Sequence Selection
A
Address Inputs
VDD
3.3V/2.5V Power Supply
A0, A1
Synchronous Burst Address Inputs
NC
No Connect
ADV
Synchronous Burst Address Advance/
Load
DQx
Data Inputs/Outputs
DQPx
Parity Data I/O
WE
Synchronous Read/Write Control Input
V DDQ
CLK
Synchronous Clock
Isolated output Power Supply
3.3V/2.5V
CKE
Clock Enable
VSS
Ground
CE, CE2, CE2 Synchronous Chip Enable
6
BWx (x=a,b)
Synchronous Byte Write Inputs
OE
Output Enable
ZZ
Power Sleep Mode
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
08/26/05
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A
ISSI
119-PIN PBGA PACKAGE CONFIGURATION
®
256K x 18 (TOP VIEW)
1
2
3
4
5
6
A
VDDQ
A
A
NC
A
A
VDDQ
B
NC
CE2
A
ADV
A
CE2
NC
C
NC
A
A
VDD
A
A
NC
D
DQb
NC
VSS
NC
Vss
DQPa
NC
E
DQb
VSS
CE
Vss
NC
DQa
F
NC
VDDQ
NC
VSS
OE
Vss
DQa
VDDQ
G
NC
DQb
BWb
NC
NC
DQa
H
DQb
NC
WE
Vss
DQa
NC
J
VDDQ
VDD
VSS
NC
VDD
NC
VDD
VDDQ
K
NC
DQb
VSS
CLK
Vss
NC
DQa
L
DQb
NC
NC
NC
BWa
DQa
NC
M
VDDQ
DQb
VSS
CKE
Vss
NC
VDDQ
N
DQb
NC
VSS
A1 *
Vss
DQa
NC
P
NC
DQPb
VSS
A0 *
Vss
NC
DQa
R
NC
A
MODE
VDD
NC
A
NC
T
NC
A
A
NC
A
A
ZZ
U
VDDQ
NC
NC
NC
NC
NC
VDDQ
NC
7
Note: A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
Pin Name
OE
Output Enable
A
Address Inputs
ZZ
Power Sleep Mode
A0, A1
Synchronous Burst Address Inputs
MODE
Burst Sequence Selection
ADV
Synchronous Burst Address Advance/
Load
VDD
Power Supply
VSS
Ground
WE
Synchronous Read/Write Control Input
NC
No Connect
CLK
Synchronous Clock
DQa-DQb
Data Inputs/Outputs
CKE
Clock Enable
DQPa-Pb
Parity Data I/O
CE
Synchronous Chip Select
VDDQ
Output Power Supply
CE2
Synchronous Chip Select
CE2
Synchronous Chip Select
BWx (x=a,b)
Synchronous Byte Write Inputs
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
08/26/05
7
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A
ISSI
®
PIN CONFIGURATION
DQb
DQa
DQb
VDDQ
VDDQ
Vss
DQa
Vss
DQb
DQa
DQb
DQa
DQa
Vss
DQPb
NC
VDDQ
VDDQ
DQa
DQa
DQPa
NC
NC
NC
Vss
NC
ADV
NC
OE
CKE
CLK
WE
CE2
VDD
Vss
BWa
NC
BWb
NC
CE2
CE
A
A
A
NC
NC
VDDQ
Vss
NC
DQPa
DQa
DQa
Vss
VDDQ
DQa
DQa
Vss
NC
VDD
ZZ
DQa
DQa
VDDQ
Vss
DQa
DQa
NC
NC
Vss
VDDQ
NC
NC
NC
A
A
DQa
NC
Vss
A
DQb
NC
VDD
A
DQb
DQb
Vss
NC
VDD
ZZ
A
DQb
A
VDDQ
NC
A
Vss
VDDQ
NC
DQb
Vss
Vss
DQb
VDD
DQb
NC
NC
NC
NC
DQb
Vss
A1
A0
MODE
DQd
DQd
DQPd
DQb
DQb
VDDQ
A
VDDQ
Vss
NC
A
DQd
DQd
Vss
VDDQ
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
80
1
79
2
78
3
77
4
76
5
75
6
74
7
73
8
72
9
71
10
70
11
69
12
68
13
67
14
66
15
65
16
64
17
63
18
62
19
61
20
60
21
59
22
58
23
57
24
56
25
55
26
54
27
53
28
52
29
51
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
DQd
DQb
NC
A
Vss
DQd
DQb
MODE
VDDQ
DQPb
A
A
DQd
A
DQd
A
NC
Vss
A
DQc
NC
VDD
A
DQc
NC
A
VDDQ
NC
Vss
VDD
DQc
Vss
DQc
NC
NC
DQc
DQc
A1
A0
Vss
A
VDDQ
A
DQc
A
DQc
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
80
1
79
2
78
3
77
4
76
5
75
6
74
7
73
8
72
9
71
10
70
11
69
12
68
13
67
14
66
15
65
16
64
17
63
18
62
19
61
20
60
21
59
22
58
23
57
24
56
25
55
26
54
27
53
28
52
29
51
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
DQPc
A
A
A
A
NC
OE
ADV
NC
CKE
CLK
WE
CE2
VDD
Vss
BWa
BWc
BWb
BWd
CE2
CE
A
A
100-Pin TQFP
256K x 18
128K x 36
PIN DESCRIPTIONS
A0, A1
8
Synchronous Address Inputs. These
pins must tied to the two LSBs of the
address bus.
A
Synchronous Address Inputs
CLK
Synchronous Clock
ADV
Synchronous Burst Address Advance
BWa-BWd
Synchronous Byte Write Enable
WE
Write Enable
CKE
Clock Enable
Vss
Ground for Core
NC
Not Connected
CE, CE2, CE2 Synchronous Chip Enable
OE
Output Enable
DQa-DQd
Synchronous Data Input/Output
DQPa-DQPd
Parity Data I/O
MODE
Burst Sequence Selection
VDD
+3.3V/2.5V Power Supply
VSS
Ground for output Buffer
VDDQ
Isolated Output Buffer Supply: +3.3V/2.5V
ZZ
Snooze Enable
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
08/26/05
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A
ISSI
®
STATE DIAGRAM
READ
READ
READ
BURST
WRITE
BEGIN
READ
DS
READ
WRITE
DESELECT
BURST
BURST
READ
BEGIN
WRITE
DS
BURST
DS
BURST
DS
DS
WRITE
BURST
WRITE
READ
WRITE
WRITE
BURST
SYNCHRONOUS TRUTH TABLE(1)
Operation
Not Selected
Not Selected
Not Selected
Not Selected Continue
Begin Burst Read
Continue Burst Read
NOP/Dummy Read
Dummy Read
Begin Burst Write
Continue Burst Write
NOP/Write Abort
Write Abort
Ignore Clock
Notes:
Address
Used
CE
CE2
CE
CE2
ADV
WE
BW
BWx
OE
CKE
CLK
N/A
N/A
N/A
N/A
External Address
Next Address
External Address
Next Address
External Address
Next Address
N/A
Next Address
Current Address
H
X
X
X
L
X
L
X
L
X
L
X
X
X
L
X
X
H
X
H
X
H
X
H
X
X
X
X
H
X
L
X
L
X
L
X
L
X
X
L
L
L
H
L
H
L
H
L
H
L
H
X
X
X
X
X
H
X
H
X
L
X
L
X
X
X
X
X
X
X
X
X
X
L
L
H
H
X
X
X
X
X
L
L
H
H
X
X
X
X
X
L
L
L
L
L
L
L
L
L
L
L
L
H
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
1.
2.
3.
4.
"X" means don't care.
The rising edge of clock is symbolized by ↑
A continue deselect cycle can only be entered if a deselect cycle is executed first.
WE = L means Write operation in Write Truth Table.
WE = H means Read operation in Write Truth Table.
5. Operation finally depends on status of asynchronous pins (ZZ and OE).
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
08/26/05
9
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A
ISSI
®
ASYNCHRONOUS TRUTH TABLE(1)
Operation
ZZ
OE
I/O STATUS
Sleep Mode
H
L
L
L
L
X
L
H
X
X
High-Z
DQ
High-Z
Din, High-Z
High-Z
Read
Write
Deselected
Notes:
1. X means "Don't Care".
2. For write cycles following read cycles, the output buffers must be disabled with OE, otherwise data bus
contention will occur.
3. Sleep Mode means power Sleep Mode where stand-by current does not depend on cycle time.
4. Deselected means power Sleep Mode where stand-by current depends on cycle time.
WRITE TRUTH TABLE (x18)
Operation
READ
WRITE BYTE a
WRITE BYTE b
WRITE ALL BYTEs
WRITE ABORT/NOP
Notes:
WE
BW
BWa
BW
BWb
H
L
L
L
L
X
L
H
L
H
X
H
L
L
H
1. X means "Don't Care".
2. All inputs in this table must beet setup and hold time around the rising edge of CLK.
10
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
08/26/05
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A
ISSI
®
WRITE TRUTH TABLE (x36)
Operation
READ
WRITE BYTE a
WRITE BYTE b
WRITE BYTE c
WRITE BYTE d
WRITE ALL BYTEs
WRITE ABORT/NOP
Notes:
WE
BW
BWa
BW
BWb
BW
BWc
BW
BWd
H
L
L
L
L
L
L
X
L
H
H
H
L
H
X
H
L
H
H
L
H
X
H
H
L
H
L
H
X
H
H
H
L
L
H
1. X means "Don't Care".
2. All inputs in this table must beet setup and hold time around the rising edge of CLK.
INTERLEAVED BURST ADDRESS TABLE (MODE = VDD or NC)
External Address
A1 A0
1st Burst Address
A1 A0
2nd Burst Address
A1 A0
3rd Burst Address
A1 A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
08/26/05
11
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A
ISSI
®
LINEAR BURST ADDRESS TABLE (MODE = VSS)
0,0
A1', A0' = 1,1
0,1
1,0
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
TSTG
PD
IOUT
VIN, VOUT
VIN
Parameter
Storage Temperature
Power Dissipation
Output Current (per I/O)
Voltage Relative to VSS for I/O Pins
Voltage Relative to VSS for
for Address and Control Inputs
Value
–65 to +150
1.6
100
–0.5 to VDDQ + 0.3
–0.3 to 4.6
Unit
°C
W
mA
V
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages or electric fields; however,
precautions may be taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance
circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
OPERATING RANGE (IS61NLFx)
Range
Commercial
Industrial
12
Ambient Temperature
0°C to +70°C
-40°C to +85°C
VDD
3.3V ± 5%
3.3V ± 5%
VDDQ
3.3V / 2.5V ± 5%
3.3V / 2.5V ± 5%
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
08/26/05
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A
ISSI
®
OPERATING RANGE (IS61NVFx)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
-40°C to +85°C
VDD
2.5V ± 5%
2.5V ± 5%
VDDQ
2.5V ± 5%
2.5V ± 5%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
3.3V
2.5V
Symbol
Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
VOH
Output HIGH Voltage
IOH = –4.0 mA (3.3V)
IOH = –1.0 mA (2.5V)
2.4
—
2.0
—
V
VOL
Output LOW Voltage
IOL = 8.0 mA (3.3V)
IOL = 1.0 mA (2.5V)
—
0.4
—
0.4
V
VIH
Input HIGH Voltage
2.0
VDD + 0.3
1.7
VDD + 0.3
V
VIL
Input LOW Voltage
–0.3
0.8
–0.3
0.7
V
ILI
Input Leakage Current
VSS ≤ VIN ≤ VDD
–5
5
–5
5
µA
ILO
Output Leakage Current
VSS ≤ VOUT ≤ VDDQ, OE = VIH
–5
5
–5
5
µA
(1)
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
7.5
MAX
x18
x36
155
160
Symbol Parameter
Test Conditions
ICC
Device Selected,
Com.
OE = VIH, ZZ ≤ VIL,
Ind.
All Inputs ≤ 0.2V or ≥ VDD – 0.2V,
Cycle Time ≥ tKC min.
typ.(2)
175
180
AC Operating
Supply Current
Temp. range
6.5
MAX
x18
x36
175
180
120
Unit
155
160
mA
110
ISB
Standby Current
TTL Input
Device Deselected,
VDD = Max.,
All Inputs ≤ VIL or ≥ VIH,
ZZ ≤ VIL, f = Max.
COM.
Ind.
90
100
90
100
90
100
90
100
mA
ISBI
Standby Current
CMOS Input
Device Deselected,
Com.
VDD = Max.,
Ind.
VIN ≤ VSS + 0.2V or ≥ VDD – 0.2V
f=0
typ.(2)
70
75
70
75
70
75
70
75
mA
ZZ > VIH
30
35
30
35
mA
ISB2
Sleep Mode
Com.
Ind.
typ.(2)
40
40
30
35
20
30
35
20
Note:
1. MODE pin has an internal pullup and should be tied to VDD or VSS. It exhibits ±100 µA maximum leakage current when tied to
≤ VSS + 0.2V or ≥ VDD – 0.2V.
2. Typical values are measured at VDD = 3.3V, TA = 25oC and not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
08/26/05
13
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A
ISSI
®
CAPACITANCE(1,2)
Symbol
Parameter
CIN
Input Capacitance
COUT
Input/Output Capacitance
Conditions
Max.
Unit
VIN = 0V
6
pF
VOUT = 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.
3.3V I/O AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
1.5 ns
1.5V
See Figures 1 and 2
3.3V I/O OUTPUT LOAD EQUIVALENT
317 Ω
+3.3V
Zo= 50Ω
OUTPUT
OUTPUT
50Ω
5 pF
Including
jig and
scope
351 Ω
1.5V
Figure 1
14
Figure 2
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
08/26/05
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A
ISSI
®
2.5V I/O AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 2.5V
1.5 ns
1.25V
See Figures 3 and 4
2.5V I/O OUTPUT LOAD EQUIVALENT
1,667 Ω
+2.5V
ZO = 50Ω
OUTPUT
OUTPUT
50Ω
5 pF
Including
jig and
scope
1,538 Ω
1.25V
Figure 3
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
08/26/05
Figure 4
15
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A
ISSI
®
READ/WRITE CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
6.5
Min.
Max.
7.5
Min. Max.
Symbol
Parameter
fmax
Clock Frequency
—
133
—
117
MHz
tKC
Cycle Time
7.5
—
8.5
—
ns
tKH
Clock High Time
2.2
—
2.5
—
ns
tKL
Clock Low Time
2.2
—
2.5
—
ns
Clock Access Time
—
6.5
—
7.5
ns
Clock High to Output Invalid
2.5
—
2.5
—
ns
tKQLZ
Clock High to Output Low-Z
2.5
—
2.5
—
ns
tKQHZ(2,3)
Clock High to Output High-Z
—
3.8
—
4.0
ns
tOEQ
tKQ
tKQX
(2)
(2,3)
Unit
Output Enable to Output Valid
—
3.2
—
3.4
ns
(2,3)
Output Enable to Output Low-Z
0
—
0
—
ns
(2,3)
tOEHZ
Output Disable to Output High-Z
—
3.5
—
3.5
ns
tAS
Address Setup Time
1.5
—
1.5
—
ns
tWS
Read/Write Setup Time
1.5
—
1.5
—
ns
tCES
Chip Enable Setup Time
1.5
—
1.5
—
ns
tSE
Clock Enable Setup Time
1.5
—
1.5
—
ns
tADVS
Address Advance Setup Time
1.5
—
1.5
—
ns
tDS
Data Setup Time
1.5
—
1.5
—
ns
tAH
Address Hold Time
0.5
—
0.5
—
ns
tHE
Clock Enable Hold Time
0.5
—
0.5
—
ns
tWH
Write Hold Time
0.5
—
0.5
—
ns
tCEH
Chip Enable Hold Time
0.5
—
0.5
—
ns
tADVH
Address Advance Hold Time
0.5
—
0.5
—
ns
tDH
Data Hold Time
0.5
—
0.5
—
ns
tPDS
ZZ High to Power Down
—
2
—
2
cyc
tPUS
ZZ Low to Power Down
—
2
—
2
cyc
tOELZ
Notes:
1. Configuration signal MODE is static and must not change during normal operation.
2. Guaranteed but not 100% tested. This parameter is periodically sampled.
3. Tested with load in Figure 2.
16
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
08/26/05
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A
ISSI
®
SLEEP MODE ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
Min.
ISB2
Current during SLEEP MODE
tPDS
ZZ active to input ignored
tPUS
ZZ inactive to input sampled
2
cycle
tZZI
ZZ active to SLEEP current
2
cycle
tRZZI
ZZ inactive to exit SLEEP current
0
ns
ZZ ≥ VIH
Max.
Unit
35
mA
2
cycle
SLEEP MODE TIMING
CLK
tPDS
ZZ setup cycle
tPUS
ZZ recovery cycle
ZZ
tZZI
Isupply
ISB2
tRZZI
All Inputs
(except ZZ)
Deselect or Read Only
Deselect or Read Only
Normal
operation
cycle
Outputs
(Q)
High-Z
Don't Care
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
08/26/05
17
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A
ISSI
®
READ CYCLE TIMING
tKH tKL
CLK
tKC
tADVS tADVH
ADV
tAS tAH
Address
A1
A3
A2
tWS tWH
WRITE
tSE tHE
CKE
tCES tCEH
CE
OE
tOEQ
tOEHZ
tDS
tKQ
tKQHZ
tOEHZ
Data Out
Q1-1
Q2-1
Q2-2
Q2-3
NOTES: WRITE = L means WE = L and BWx = L
WE = L and BWX = L
CE = L means CE1 = L, CE2 = H and CE2 = L
CE = H means CE1 = H, or CE1 = L and CE2 = H, or CE1 = L and CE2 = L
18
Q2-4
Q3-1
Q3-2
Q3-3
Q3-4
Don't Care
Undefined
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
08/26/05
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A
ISSI
®
WRITE CYCLE TIMING
tKH tKL
CLK
tKC
ADV
Address
A1
A3
A2
WRITE
tSE tHE
CKE
CE
OE
tDS
Data In
D1-1
D2-1
D2-2
D2-3
D2-4
D3-1
tDH
D3-2
D3-3
D3-4
tOEHZ
Data Out
Q0-4
NOTES: WRITE = L means WE = L and BWx = L
WE = L and BWX = L
CE = L means CE1 = L, CE2 = H and CE2 = L
CE = H means CE1 = H, or CE1 = L and CE2 = H, or CE1 = L and CE2 = L
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
08/26/05
Don't Care
Undefined
19
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A
ISSI
®
SINGLE READ/WRITE CYCLE TIMING
tKH
tKL
CLK
tSE tHE
tKC
CKE
Address
A1
A2
A3
A4
A5
A6
A7
A8
A9
WRITE
CE
ADV
OE
tOEQ
tOELZ
Data Out
Q1
Q3
Q4
Q6
Q7
tDS tDH
Data In
D5
D2
NOTES: WRITE = L means WE = L and BWx = L
CE = L means CE1 = L, CE2 = H and CE2 = L
CE = H means CE1 = H, or CE1 = L and CE2 = H, or CE1 = L and CE2 = L
20
Don't Care
Undefined
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
08/26/05
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A
ISSI
®
CKE OPERATION TIMING
tKH
tKL
CLK
tSE tHE
tKC
CKE
Address
A1
A2
A3
A4
A5
A6
WRITE
CE
ADV
OE
tKQ
tKQHZ
tKQLZ
Data Out
Q1
Q3
Q4
tDS tDH
Data In
D2
NOTES: WRITE = L means WE = L and BWx = L
CE = L means CE1 = L, CE2 = H and CE2 = L
CE = H means CE1 = H, or CE1 = L and CE2 = H, or CE1 = L and CE2 = L
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
08/26/05
D5
Don't Care
Undefined
21
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A
ISSI
®
CE OPERATION TIMING
tKH
tKL
CLK
tSE tHE
tKC
CKE
Address
A1
A2
A3
A4
A5
WRITE
CE
ADV
OE
tOEQ
tKQHZ
tKQ
tKQLZ
tOELZ
Data Out
Q1
Q2
Q4
tDS tDH
Data In
D3
NOTES: WRITE = L means WE = L and BWx = L
CE = L means CE1 = L, CE2 = H and CE2 = L
CE = H means CE1 = H, or CE1 = L and CE2 = H, or CE1 = L and CE2 = L
22
D5
Don't Care
Undefined
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
08/26/05
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A
ISSI
®
ORDERING INFORMATION (VDD = 3.3V/VDDQ = 2.5V/3.3V)
Commercial Range: 0°C to +70°C
Access Time
Order Part Number
Package
128Kx36
6.5
7.5
IS61NLF12836A-6.5TQ
IS61NLF12836A-6.5B2
100 TQFP
119 PBGA
IS61NLF12836A-6.5B3
165 PBGA
IS61NLF12836A-7.5TQ
IS61NLF12836A-7.5B2
IS61NLF12836A-7.5B3
100 TQFP
119 PBGA
165 PBGA
256Kx18
6.5
IS61NLF25618A-6.5TQ
IS61NLF25618A-6.5B2
IS61NLF25618A-6.5B3
100 TQFP
119 PBGA
165 PBGA
7.5
IS61NLF25618A-7.5TQ
IS61NLF25618A-7.5B2
IS61NLF25618A-7.5B3
100 TQFP
119 PBGA
165 PBGA
Industrial Range: -40°C to +85°C
Access Time
Order Part Number
Package
128Kx36
6.5
IS61NLF12836A-6.5TQI
IS61NLF12836A-6.5B2I
IS61NLF12836A-6.5B3I
100 TQFP
119 PBGA
165 PBGA
7.5
IS61NLF12836A-7.5TQI
IS61NLF12836A-7.5TQLI
IS61NLF12836A-7.5B2I
IS61NLF12836A-7.5B3I
100 TQFP
100 TQFP, Lead-free
119 PBGA
165 PBGA
256Kx18
6.5
IS61NLF25618A-6.5TQI
IS61NLF25618A-6.5B2I
IS61NLF25618A-6.5B3I
100 TQFP
119 PBGA
165 PBGA
7.5
IS61NLF25618A-7.5TQI
IS61NLF25618A-7.5TQLI
IS61NLF25618A-7.5B2I
100 TQFP
100 TQFP, Lead-free
119 PBGA
IS61NLF25618A-7.5B3I
165 PBGA
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
08/26/05
23
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A
ISSI
®
ORDERING INFORMATION (VDD = 2.5V/VDDQ = 2.5V)
Commercial Range: 0°C to +70°C
Access Time
Order Part Number
Package
128Kx36
6.5
IS61NVF12836A-6.5TQ
IS61NVF12836A-6.5B2
IS61NVF12836A-6.5B3
100 TQFP
119 PBGA
165 PBGA
7.5
IS61NVF12836A-7.5TQ
IS61NVF12836A-7.5B2
100 TQFP
119 PBGA
IS61NVF12836A-7.5B3
165 PBGA
256Kx18
6.5
IS61NVF25618A-6.5TQ
IS61NVF25618A-6.5B2
IS61NVF25618A-6.5B3
100 TQFP
119 PBGA
165 PBGA
7.5
IS61NVF25618A-7.5TQ
IS61NVF25618A-7.5B2
IS61NVF25618A-7.5B3
100 TQFP
119 PBGA
165 PBGA
Order Part Number
Package
Industrial Range: -40°C to +85°C
Access Time
128Kx36
6.5
IS61NVF12836A-6.5TQI
IS61NVF12836A-6.5B2I
IS61NVF12836A-6.5B3I
100 TQFP
119 PBGA
165 PBGA
7.5
IS61NVF12836A-7.5TQI
IS61NVF12836A-7.5B2I
IS61NVF12836A-7.5B3I
100 TQFP
119 PBGA
165 PBGA
256Kx18
24
6.5
IS61NVF25618A-6.5TQI
IS61NVF25618A-6.5B2I
IS61NVF25618A-6.5B3I
100 TQFP
119 PBGA
165 PBGA
7.5
IS61NVF25618A-7.5TQI
IS61NVF25618A-7.5B2I
IS61NVF25618A-7.5B3I
100 TQFP
119 PBGA
165 PBGA
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00A
08/26/05
ISSI
PACKAGING INFORMATION
®
Plastic Ball Grid Array
Package Code: B (119-pin)
φ b (119X)
E
A
7
6
5
4
D2
D1
e
A2
A3
E2
Sym.
Min.
N0.
Leads
Max.
SEATING PLANE
INCHES
Min.
Max.
Notes:
119
A
—
2.41
—
0.095
A1
0.50
0.70
0.020
0.028
A2
0.80
1.00
0.032
0.039
A3
1.30
1.70
0.051
0.067
A4
0.56 BSC
0.60
0.90
0.024
0.035
D
21.80
22.20
0.858
0.874
20.32 BSC
0.800 BSC
D2
19.40
19.60
0.764
0.772
E
13.80
14.20
0.543
0.559
E1
E2
e
7.62 BSC
11.90
12.10
1.27 BSC
1. Controlling dimension: millimeters, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D1 and E do not include mold flash protrusion and
should be measured from the bottom of the package.
4. Formed leads shall be planar with respect to one another within
0.004 inches at the seating plane.
0.022 BSC
b
D1
E1
A1
A4
MILLIMETERS
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
30ϒ
D
3 2
0.300 BSC
0.469
0.476
0.050 BSC
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
02/12/03
ISSI
PACKAGING INFORMATION
®
Ball Grid Array
Package Code: B (165-pin)
BOTTOM VIEW
TOP VIEW
A1 CORNER
1
2
3
4
A1 CORNER
φ b (165X)
5
6
7
8
9
10
11 10
11
9
8
7
6
5
4
3
2
1
A
A
B
B
C
C
D
D
E
E
e
F
F
G
G
D D1
H
H
J
J
K
K
L
L
M
M
N
N
P
P
R
R
e
E1
E
A2
A
A1
BGA - 13mm x 15mm
MILLIMETERS
Sym.
Min.
N0.
Leads
Nom. Max.
Notes:
1. Controlling dimensions are in millimeters.
INCHES
Min.
165
Nom. Max.
165
A
—
—
1.20
—
A1
0.25
0.33
0.40
0.010
—
0.047
0.013 0.016
A2
—
0.79
—
—
0.031
—
D
14.90
15.00
15.10
0.587
0.591
0.594
D1
13.90
14.00
14.10
0.547
0.551
0.555
E
12.90
13.00
13.10
0.508
0.512
0.516
E1
9.90
10.00
10.10
0.390
0.394
0.398
e
—
1.00
—
—
0.039
—
b
0.40
0.45
0.50
0.016
0.018
0.020
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
06/11/03
ISSI
PACKAGING INFORMATION
TQFP (Thin Quad Flat Pack Package)
Package Code: TQ
D
D1
E
E1
N
L1
L
C
1
e
SEATING
PLANE
A2
A
b
A1
Thin Quad Flat Pack (TQ)
Inches
Millimeters
Min
Max
Min
Max
Millimeters
Symbol Min
Max
Ref. Std.
No. Leads (N)
100
A
—
1.60
—
0.063
A1
0.05 0.15
0.002 0.006
A2
1.35 1.45
0.053 0.057
b
0.22 0.38
0.009 0.015
D
21.90 22.10
0.862 0.870
D1
19.90 20.10
0.783 0.791
E
15.90 16.10
0.626 0.634
E1
13.90 14.10
0.547 0.555
e
0.65 BSC
0.026 BSC
L
0.45 0.75
0.018 0.030
L1
1.00 REF.
0.039 REF.
C
0o
7o
0o
7o
128
—
1.60
0.05 0.15
1.35 1.45
0.17 0.27
21.80 22.20
19.90 20.10
15.80 16.20
13.90 14.10
0.50 BSC
0.45 0.75
1.00 REF.
0o
7o
Integrated Silicon Solution, Inc. — 1-800-379-4774
PK13197LQ Rev. D 05/08/03
Inches
Min
Max
—
0.063
0.002 0.006
0.053 0.057
0.007 0.011
0.858 0.874
0.783 0.791
0.622 0.638
0.547 0.555
0.020 BSC
0.018 0.030
0.039 REF.
0o
7o
Notes:
1. All dimensioning and
tolerancing conforms to
ANSI Y14.5M-1982.
2. Dimensions D1 and E1 do
not include mold protrusions.
Allowable protrusion is 0.25
mm per side. D1 and E1 do
include mold mismatch and
are determined at datum
plane -H-.
3. Controlling dimension:
millimeters.
®
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