HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057. 14A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time...................140ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49121. JEDEC TO-263AB JEDEC TO-220AB COLLECTOR (FLANGE) GATE EMITTER COLLECTOR (FLANGE) EMITTER COLLECTOR GATE C JEDEC TO-262 EMITTER COLLECTOR GATE G COLLECTOR (FLANGE) E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 ©2005 Fairchild Semiconductor Corporation HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev. B 1 1 www.fairchildsemi.com HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes September 2005 Symbol BVCES IC25 IC110 Parameter Collector to Emitter Voltage Collector Current Continuous At TC = 25oC Collector Current Continuous At TC = 110oC Ratings 600 Units V 14 A 7 A I(AVG) Average Diode Forward Current at 110oC 8 A ICM Collector Current Pulsed (Note 1) 56 A VGES Gate to Emitter Voltage Continuous ±20 V VGEM Gate to Emitter Voltage Pulsed ±30 V SSOA PD Switching Safe Operating Area at TJ = 150oC (Figure 14) Power Dissipation Total at TC = 25oC Power Dissipation Derating TC > 25oC TJ, TSTG Operating and Storage Junction Temperature Range TL Maximum Lead Temperature for Soldering tSC 40A at 480V 60 W 0.487 W/oC -40 to 150 o C 260 o C Short Circuit Withstand Time (Note 2) at VGE = 15V 1 µs Short Circuit Withstand Time (Note 2) at VGE = 10V 8 µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 50W. Thermal Characteristics RθJC Thermal Resistance IGBT 2.1 oC/W Thermal Resistance Diode 2.0 oC/W Package Marking and Ordering Information Part Number Package Brand HGTP7N60C3D TO-220AB G7N60C3D HGT1S7N60C3DS TO-263AB G7N60C3D HGT1S7N60C3D TO-262 G7N60C3D NOTES:When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. HGT1S7N60C3DS9A. 2 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev. B 1 www.fairchildsemi.com HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units 600 - - V - 250 2.0 µA mA Off Characteristics BVCES Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0V ICES Collector to Emitter Leakage Current VCE = BVCES, TC = 25oC VCE = BVCES, TC = 150oC IGES Gate-Emitter Leakage Current VGE = ±25V Collector to Emitter Saturation Voltage IC = IC110, VGE = 15V VCE(SAT) - - ±250 nA - 1.6 2.0 V - 1.9 2.4 V 3.0 5.0 6.0 V VCE(PK) = 480V 40 - - A VCE(PK) = 600V 60 - - A - 8 - V TC = 25oC TC = 150oC On Characteristics VGE(TH) Gate-Emitter Threshold Voltage IC = 250µA, VCE = VGE, TC = 25oC 150oC, SSOA Switching SOA TJ = RG = 50Ω , VGE = 15V, L = 1mH VGEP Gate to Emitter Plateau Voltage IC = IC110, VCE = 0.5 BVCES Switching Characteristics td(ON)I Current Turn-On Delay Time trI Current Rise Time td(OFF)I Current Turn-Off Delay Time tfI Current Fall Time EON Turn-On Energy EOFF Turn-Off Energy (Note 3) QG(ON) On-State Gate Charge TJ = 150oC ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V RG = 50Ω L = 1mH - 8.5 - ns - 11.5 - ns - 350 400 ns - 140 275 ns - 165 - µJ - 600 - µJ VGE = 15V IC = IC110, VCE = 0.5 BVCES VGE = 20V - 23 30 nC - 30 38 nC IEC = 7A - 1.9 2.5 V IEC = 7A, dIEC/dt = 200A/µs - 25 37 ns IEC = 1A, dIEC/dt = 200A/µs - 18 30 ns Drain-Source Diode Characteristics and Maximum Ratings VEC trr Diode Forward Voltage Diode Reverse Recovery Time NOTES: 3.Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTP7N60C3D and HGT1S7N60C3DS were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. 3 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev. B 1 www.fairchildsemi.com HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Electrical Characteristics TA = 25°C unless otherwise noted ICE, COLLECTOR TO EMITTER CURRENT (A) 30 25 TC = 150oC 20 o TC = 25 C 15 TC = -40oC 10 5 0 4 6 8 10 12 VGE, GATE TO EMITTER VOLTAGE (V) 14 TC = -40oC 20 15 TC = 150oC 10 TC = 25oC 5 0 0 1 2 3 25 4 tSC , SHORT CIRCUIT WITHSTAND TIME (µs) ICE , DC COLLECTOR CURRENT (A) 9 6 3 75 100 125 150 TC , CASE TEMPERATURE (oC) Figure 5. MAXIMUM DC COLLECTOR CURRENT vs CASE TEMPERATURE 7.5V 0 7.0V 0 2 4 6 8 10 40 PULSE DURATION = 250µs DUTY CYCLE <0.5%, VGE = 15V 35 TC = 25oC TC = -40oC 30 25 20 TC = 150oC 15 10 5 0 0 1 2 3 4 5 12 140 VCE = 360V, RG = 50Ω, TJ = 125oC 10 120 ISC 8 100 6 80 4 60 tSC 2 10 13 14 11 12 VGE , GATE TO EMITTER VOLTAGE (V) 40 15 Figure 6. SHORT CIRCUIT WITHSTAND TIME 4 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev. B 1 8.0V 5 Figure 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE 12 50 8.5V 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VGE = 15V 25 9.0V 15 5 Figure 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE 0 VGE = 15.0V 20 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 15 10.0V 30 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 30 25 12.0V Figure 2. SATURATION CHARACTERISTICS PULSE DURATION = 250µs DUTY CYCLE <0.5%, VGE = 10V 35 PULSE DURATION = 250µs, DUTY CYCLE <0.5%, 35 TC = 25oC VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 1. TRANSFER CHARACTERISTICS 40 40 ISC, PEAK SHORT CIRCUIT CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 40 DUTY CYCLE <0.5%, V = 10V CE PULSE DURATION = 250µs 35 www.fairchildsemi.com HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Typical Performance Curves 500 50 td(ON)I , TURN-ON DELAY TIME (ns) 40 td(OFF)I , TURN-OFF DELAY TIME (ns) TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V 30 20 VGE = 10V VGE = 15V 10 5 2 5 8 11 14 17 TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V 450 400 350 VGE = 10V or 15V 300 250 200 20 2 ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 7. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 300 TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V 250 VGE = 10V 100 VGE = 15V 200 VGE = 10V or 15V 150 10 5 2 17 14 8 11 ICE , COLLECTOR TO EMITTER CURRENT (A) 5 100 2 20 VGE = 10V 500 VGE = 15V 100 40 2 5 8 11 14 17 ICE , COLLECTOR TO EMITTER CURRENT (A) 14 17 20 TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V 1000 VGE = 10V OR 15V 500 100 20 Figure 11. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 2 5 8 11 14 17 ICE , COLLECTOR TO EMITTER CURRENT (A) 20 Figure 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 5 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev. B 1 11 3000 TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V 1000 8 Figure 10. Single Pulse Maximum Power Dissipation EOFF, TURN-OFF ENERGY LOSS (µJ) 2000 5 ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 9. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT EON , TURN-ON ENERGY LOSS (µJ) 20 Figure 8. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT tfI , FALL TIME (ns) trI , TURN-ON RISE TIME (ns) 200 8 11 14 17 5 ICE , COLLECTOR TO EMITTER CURRENT (A) www.fairchildsemi.com HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) TJ = 150oC, TC = 75oC RG = 50Ω, L = 1mH 100 VGE = 15V VGE = 10V fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) 10 PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RθJC = 2.1oC/W 1 2 10 20 30 50 TJ = 150oC, VGE = 15V, RG = 50Ω, L = 1mH 40 30 20 10 0 0 ICE, COLLECTOR TO EMITTER CURRENT (A) VCE , COLLECTOR TO EMITTER VOLTAGE (V) C, CAPACITANCE (pF) CIES 800 600 400 200 0 COES CRES 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 600 600 15 500 12.5 400 10 VCE = 200V VCE = 400V 300 7.5 VCE = 600V 5 200 IG(REF) = 1.044mA, 100 0 0 2.5 RL = 50Ω, TC = 25oC 5 15 10 20 25 0 30 QG, GATE CHARGE (nC) Figure 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ZθJC , NORMALIZED THERMAL RESPONSE 500 Figure 14. MINIMUM SWITCHING SAFE OPERATING AREA FREQUENCY = 1MHz 1000 400 300 200 VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V) Figure 13. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 1200 100 VGE, GATE TO EMITTER VOLTAGE (V) fMAX , OPERATING FREQUENCY (kHz) 200 Figure 16. GATE CHARGE WAVEFORMS 100 0.5 t1 0.2 10-1 PD 0.1 t2 0.05 0.02 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 0.01 10-2 10-5 SINGLE PULSE 10-4 10-2 10-1 10-3 t1 , RECTANGULAR PULSE DURATION (s) 101 100 Figure 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE 6 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev. B 1 www.fairchildsemi.com HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Typical Performance Curves 30 10 175oC 100oC 25oC 1.0 0.5 TC = 25oC, dIEC/dt = 200A/µs 25 tr , RECOVERY TIMES (ns) IEC , FORWARD CURRENT (A) 30 trr 20 15 ta 10 tb 5 0 0.5 1.0 1.5 2.0 2.5 0 0.5 3.0 1 VEC , FORWARD VOLTAGE (V) 3 7 IEC , FORWARD CURRENT (A) Figure 19. RECOVERY TIMES vs FORWARD CURRENT Figure 18. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP Test Circuit and Waveforms L = 1mH 90% RHRD660 10% VGE EOFF RG = 50Ω EON VCE + - 90% VDD = 480V ICE tfI trI td(ON)I Figure 21. SWITCHING TEST WAVEFORMS Figure 20. INDUCTIVE SWITCHING TEST CIRCUIT 7 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev. B 1 10% td(OFF)I www.fairchildsemi.com HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Typical Performance Curves Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I + td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ECCOSORBD™ LD26 or equivalent. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. Tips of soldering irons should be grounded. Devices should never be inserted into or removed from circuits with power on. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss during turn-off. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0). Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. 8 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev. B 1 www.fairchildsemi.com HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Handling Precautions for IGBTs The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 9 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D Rev. B 1 www.fairchildsemi.com HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes TRADEMARKS