isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors D44H11 DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type D45H11 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators,converters and power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A PC Collector Power Dissipation @TC=25℃ 50 W Tj Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors D44H11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-EmitterSaturation Voltage VBE(sat) MAX UNIT IC= 8A ;IB= 0.4 A 1.0 V Base-Emitter Saturation Voltage IC= 8A ;IB= 0.8 A 1.5 V ICES Collector Cutoff Current VCE=Rated VCEO; VBE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 μA hFE-1 DC Current Gain IC= 2A ; VCE= 1V 60 hFE-2 DC Current Gain IC= 4A ; VCE= 1V 40 COB Output Capacitance VCB= 10V,f= 1.0MHz 130 pF Current-Gain—Bandwidth Product IC=0.5A;VCE= 10V;ftest=20MHz 50 MHz fT isc website：www.iscsemi.com CONDITIONS 2 MIN TYP isc & iscsemi is registered trademark