CHAMP CMT14N50 Power field effect transistor Datasheet

CMT14N50
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
!
Robust High Voltage Termination
scheme to provide enhanced voltage-blocking capability
!
Avalanche Energy Specified
without degrading performance over time. In addition, this
!
Source-to-Drain Diode Recovery Time Comparable to a
advanced MOSFET is designed to withstand high energy in
Discrete Fast Recovery Diode
avalanche and commutation modes. The new energy
!
Diode is Characterized for Use in Bridge Circuits
efficient design also offers a drain-to-source diode with a
!
IDSS and VDS(on) Specified at Elevated Temperature
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
PIN CONFIGURATION
SYMBOL
D
SO URCE
DRAIN
G ATE
TO-3P
Top View
G
S
1
2
N-Channel MOSFET
3
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current - Continuous
- Pulsed
Gate-to-Source Voltage - Continue
- Non-repetitive
Total Power Dissipation
Symbol
Value
Unit
ID
14
A
IDM
56
VGS
±20
V
VGSM
±40
V
PD
190
W
1.5
W/℃
Derate above 25℃
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy - TJ = 25℃
TJ, TSTG
-55 to 150
℃
EAS
588
mJ
θJC
0.65
℃/W
θJA
40
TL
260
(VDD = 100V, VGS = 10V, IL = 14A, L = 6mH, RG = 25Ω)
Thermal Resistance - Junction to Case
- Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
2002/12/18 Preliminary
Champion Microelectronic Corporation
℃
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CMT14N50
POWER FIELD EFFECT TRANSISTOR
ORDERING INFORMATION
Part Number
Package
CMT14N50N3P
TO-3P
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
CMT14N50
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
Symbol
Min
V(BR)DSS
500
Typ
Max
Units
V
µA
Drain-Source Leakage Current
(VDS = 500 V, VGS = 0 V)
(VDS = 400 V, VGS = 0 V, TJ = 125℃)
IDSS
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
IGSSF
100
nA
Gate-Source Leakage Current-Reverse
(Vgsr = 20 V, VDS = 0 V)
IGSSR
100
nA
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
VGS(th)
4.0
V
Static Drain-Source On-Resistance (VGS = 10 V, ID = 8.4A) *
RDS(on)
0.4
Ω
Drain-Source On-Voltage (VGS = 10 V)
(ID = 14 A)
VDS(on)
7.5
V
25
250
2.0
Forward Transconductance (VDS = 50 V, ID = 8.4A) *
gFS
Input Capacitance
Ciss
2038
Coss
307
pF
pF
Crss
10
pF
td(on)
15
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDD = 250 V, ID = 14 A,
RD = 17Ω,
RG = 6.2Ω) *
(VDS = 400 V, ID = 14 A,
VGS = 10 V)*
9.3
mhos
tr
36
ns
ns
td(off)
35
ns
tf
29
ns
Qg
64
Qgs
16
Qgd
26
nC
nC
nC
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
LD
5.0
nH
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
LS
13
nH
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = 14 A, VGS = 0 V,
dIS/dt = 100A/µs)
VSD
1.5
ton
**
trr
487
V
ns
731
ns
* Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2%
** Negligible, Dominated by circuit inductance
2002/12/18 Preliminary
Champion Microelectronic Corporation
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CMT14N50
POWER FIELD EFFECT TRANSISTOR
TYPICAL ELECTRICAL CHARACTERISTICS
2002/12/18 Preliminary
Champion Microelectronic Corporation
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CMT14N50
POWER FIELD EFFECT TRANSISTOR
2002/12/18 Preliminary
Champion Microelectronic Corporation
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CMT14N50
POWER FIELD EFFECT TRANSISTOR
2002/12/18 Preliminary
Champion Microelectronic Corporation
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CMT14N50
POWER FIELD EFFECT TRANSISTOR
2002/12/18 Preliminary
Champion Microelectronic Corporation
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CMT14N50
POWER FIELD EFFECT TRANSISTOR
PACKAGE DIMENSION
θ2
TO-3P
A
A1
A2
A3
b
θ3
b1
C
θ1
C1
D
D1
D2
D3
D4
e
f1
f2
L1
L2
L3
θ1
θ3
θ3
θ2
θ3
θ3
θ3
2002/12/18 Preliminary
Champion Microelectronic Corporation
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CMT14N50
POWER FIELD EFFECT TRANSISTOR
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage.
CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications.
understood to be fully at the risk of the customer.
Use of CMC products in such applications is
In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
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HsinChu City, Taiwan
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2002/12/18 Preliminary
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Champion Microelectronic Corporation
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