FAIRCHILD 2N4953_02

2N4953
2N4953
NPN General Purpose Amplifier
• This device designed for use as general purpose amplifier and
switches requiring collector currents to 500mA.
• Sourced from Process 10.
TO-92
1
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
VCEO
Collector-Emitter Voltage
Parameter
Value
30
Units
V
VCBO
VEBO
Collector-Base Voltage
60
V
Emitter-Base Voltage
5.0
IC
Collector Current
V
1.0
A
TJ, TST
Operating and Storage Junction Temperature Range
-55 ~ +150
°C
- Continuous
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
©2002 Fairchild Semiconductor Corporation
Rev. B, July 2002
Symbol
Off Characteristics
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV(BR)CEO
Collector-Emitter Breakdown Voltage *
IC = 10mA, IB = 0
30
V
BV(BR)CBO
Collector-Base Breakdown Voltage
IC = 10µA, IE = 0
60
V
BV(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10µA, IC = 0
5.0
ICBO
Collector Cut-off Current
VCB = 40V, IE = 0
50
nA
IEBO
Reverse Base Current
VEB = 3.0V, IC = 0
50
nA
V
On Characteristics *
75
150
200
hFE
DC Current Gain
VCE = 10V, IC = 1.0mA
VCE = 10V, IC = 10mA
VCE = 10V, IC = 150mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 150mA, IB = 15mA
0.3
VBE(sat)
Base-Emitter Saturation Voltage
IC = 150mA, IB = 15mA
1.3
V
VBE(on)
Base-Emitter On Voltage
VCE = 10V, IC = 150mA
1.2
V
8.0
pF
600
V
Small Signal Characteristics
Cob
Output Capacitance
VCB = 10V, f = 1.0MHz
hfe
Small-Signal Current Gain
IC = 20mA, VCE = 10V,
f = 100MHz
ton
Turn-On Time
toff
Turn-Off Time
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
2.5
40
ns
400
ns
* Pulse Test: Pulse ≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
PD
Parameter
Total Device Dissipation
Derate above 25°C
Max.
625
5.0
Units
mW
mW/°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, July 2002
2N4953
Electrical Characteristics Ta=25°C unless otherwise noted
2N4953
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B, July 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I