IXYS IXGH32N170 High voltage igbt Datasheet

High Voltage
IGBT
IXGH 32N170 VCES
IXGT 32N170 IC25
VCE(sat)
tfi(typ)
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
1700
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
1700
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
75
A
IC90
TC = 90°C
32
A
ICM
TC = 25°C, 1 ms
200
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 5 Ω
Clamped inductive load
PC
TC = 25°C
ICM = 90
@ 0.8 VCES
A
350
W
TO-268 (IXGT)
G
E
G
-55 ... +150
°C
TJM
150
°C
Features
Tstg
-55 ... +150
°C
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
300
°C
260
°C
z
z
z
Md
Mounting torque (M3)
1.13/10Nm/lb.in.
Weight
TO-247 AD
TO-268
6
4
g
g
C (TAB)
TO-247 AD (IXGH)
G = Gate,
E = Emitter,
TJ
= 1700 V
=
75 A
= 3.3 V
= 250 ns
z
z
C (TAB)
C
E
C = Collector,
TAB = Collector
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
High current handling capability
MOS Gate turn-on
- drive simplicity
Rugged NPT structure
Molding epoxies meet UL 94 V-0
flammability classification
Applications
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
z
z
z
z
= 250 µA, VGE = 0 V
= 250 µA, VCE = VGE
BVCES
VGE(th)
IC
IC
ICES
VCE = 0.8 • VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
= IC90, VGE = 15 V
© 2003 IXYS All rights reserved
1700
3.0
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
2.5
3.0
5.0
V
V
50
1
µA
mA
±100
nA
3.3
V
V
z
Capacitor discharge & pulser circuits
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
z
z
z
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
DS98941B(11/03)
IXGH 32N170
IXGT 32N170
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
IC(ON)
VGE = 10V, VCE = 10V
30
S
120
A
3500
pF
165
pF
Cres
40
pF
Qg
155
nC
Cies
Coes
Qge
VCE = 25 V, VGE = 0 V, f = 1 MHz
22
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
tri
td(off)
Inductive load, TJ = 25°°C
IC = IC90, VGE = 15 V
VCE = 0.6 VCES, RG = Roff = 2.7 Ω
30
nC
51
nC
45
ns
38
ns
270
500
ns
tfi
250
500
ns
Eoff
11
20 mJ
48
ns
42
ns
6.0
mJ
360
ns
tfi
560
ns
Eoff
14
mJ
td(on)
tri
Eon
td(off)
Inductive load, TJ = 125°°C
IC = IC90, VGE = 15 V
VCE = 0.6 VCES, RG = Roff = 2.7 Ω
RthJC
RthCK
TO-247 AD Outline
∅P
e
Dim.
Millimeter
Min.
Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
0.35 K/W
(TO-247)
0.25
K/W
Dim.
Min Recommended Footprint
A
A1
A2
b
b2
C
D
E
E1
e
H
L
L1
Millimeter
Min.
Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
L2
L3
L4
1.00
1.15
0.25 BSC
3.80
4.10
.039 .045
.010 BSC
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343 6,583,505
IXGH 32N170
IXGT 32N170
Fig. 1. Output Characte ristics
@ 25 Deg. C
64
240
VGE = 17V
15V
13V
11V
56
48
VGE = 17V
13V
180
9V
40
32
24
16
150
11V
120
90
9V
60
7V
30
8
0
7V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
V C E - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
48
4
6
8
V C E - Volts
10
12
14
1.8
VGE = 17V
15V
13V
11V
56
2
Fig. 4. De pende nce of V CE(sat) on
Tem perature
V GE = 15V
1.6
9V
V C E (sat)- Normalized
64
I C - Amperes
15V
210
I C - Amperes
I C - Amperes
Fig. 2. Extended Output Characte ristics
@ 25 de g. C
40
32
24
7V
16
I C = 64A
1.4
1.2
I C = 32A
1
0.8
8
0
I C = 16A
0.6
0
1
2
3
4
5
6
-50
-25
0
V CE - Volts
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Em itter Voltage
vs . Gate-to-Em iiter voltage
Fig. 6. Input Adm ittance
8
100
90
TJ = 25ºC
7
80
I C - Amperes
VC E - Volts
6
5
I C = 64A
4
60
50
40
30
32A
3
70
TJ = 125ºC
25ºC
-40ºC
20
2
16A
10
1
0
6
7
8
9
10
11
12
13
V G E - Volts
© 2003 IXYS All rights reserved
14
15
16
17
5
6
7
8
V G E - Volts
9
10
IXGH 32N170
IXGT 32N170
Fig. 7. Transconductance
Fig. 8. Dependence of Eoff on RG
25
45
40
30
E off - milliJoules
TJ = -40ºC
25ºC
125ºC
35
g f s - Siemens
TJ = 125ºC
VGE = 15V
VCE = 1020V
23
25
20
15
I C = 64A
21
19
17
I C = 32A
15
10
13
5
0
I C = 16A
11
0
16
32
48
64
80
96
0
10
20
I C - Amperes
22
50
22
R G = 3Ω
R G = 15Ω - - - - VGE = 15V
VCE = 1020V
18
20
R G = 3Ω
R G = 15Ω - - - - -
18
VGE = 15V
VCE = 1020V
TJ = 125ºC
E off - milliJoules
20
E off - MilliJoules
40
Fig. 10. Dependence of Eoff on
Tem perature
Fig. 9. Dependence of Eoff on Ic
16
14
TJ = 25ºC
12
10
I C = 64A
16
14
I C = 32A
12
I C = 16A
10
8
8
16
24
32
40
48
56
64
25
35
I C - Amperes
45
55
65
75
85
95
105 115 125
TJ - Degrees Centigrade
Fig. 12. Capacitance
Fig. 11. Gate Charge
15
10000
f = 1 MHz
VCE = 850V
IC = 32A
IG= 10mA
Capacitance - p F
12
VG E - Volts
30
R G - Ohms
9
6
C ies
1000
C oes
100
C res
3
0
10
0
30
60
90
120
150
Q G - nanoCoulombs
0
5
10
15
20
25
V C E - Volts
30
35
40
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343 6,583,505
IXGH 32N170
IXGT 32N170
Fig. 1 3 . M a x im um Tra ns ie nt The r m a l Re s is ta nc e
0.4
R (th) J C - (ºC/W)
0.3
0.2
0.1
0
1
© 2003 IXYS All rights reserved
10
Puls e W idth - millis ec onds
1 00
10 0 0
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