MOTOROLA MCM69F819ZP11

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
256K x 18 Bit Flow–Through
BurstRAM Synchronous
Fast Static RAM
The MCM69F819 is a 4M bit synchronous fast static RAM designed to provide
a burstable, high performance, secondary cache for the PowerPC and other
high performance microprocessors. It is organized as 256K words of 18 bits
each. This device integrates input registers, a 2–bit address counter, and high
speed SRAM onto a single monolithic circuit for reduced parts count in cache
data RAM applications. Synchronous design allows precise cycle control with the
use of an external clock (K).
Addresses (SA), data inputs (DQx), and all control signals except output
enable (G) and linear burst order (LBO) are clock (K) controlled through positive–
edge–triggered noninverting registers.
Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst
addresses can be generated internally by the MCM69F819 (burst sequence
operates in linear or interleaved mode dependent upon the state of LBO) and
controlled by the burst address advance (ADV) input pin.
Write cycles are internally self–timed and are initiated by the rising edge of the
clock (K) input. This feature eliminates complex off–chip write pulse generation
and provides increased timing flexibility for incoming signals.
Synchronous byte write (SBx), synchronous global write (SGW), and synchronous write enable (SW) are provided to allow writes to either individual bytes or
to all bytes. The two bytes are designated as “a” and “b”. SBa controls DQa and
SBb controls DQb. Individual bytes are written if the selected byte writes SBx are
asserted with SW. All bytes are written if either SGW is asserted or if all SBx and
SW are asserted.
For read cycles, a flow–through SRAM allows output data to simply flow freely
from the memory array.
The MCM69F819 operates from a 3.3 V core power supply and all outputs
operate on a 2.5 V or 3.3 V power supply. All inputs and outputs are JEDEC standard JESD8–5 compatible.
Order this document
by MCM69F819/D
MCM69F819
ZP PACKAGE
PBGA
CASE 999–02
TQ PACKAGE
TQFP
CASE 983A–01
• MCM69F819–7.5: 7.5 ns Access/ 8.5 ns Cycle (117 MHz)
MCM69F819–8: 8 ns Access/10 ns Cycle (100 MHz)
MCM69F819–8.5: 8.5 ns Access/11 ns Cycle 90 MHz)
MCM69F819–11: 11 ns Access/20 ns Cycle (50 MHz)
• 3.3 V + 10%, – 5% Core Power Supply, 2.5 V or 3.3 V I/O Supply
• ADSP, ADSC, and ADV Burst Control Pins
• Selectable Burst Sequencing Order (Linear/Interleaved)
• Single–Cycle Deselect Timing
• Internally Self–Timed Write Cycle
• Byte Write and Global Write Control
• PB1 Version 2.0 Compatible
• JEDEC Standard 119–Pin PBGA and 100–Pin TQFP Packages
The PowerPC name is a trademark of IBM Corp., used under license therefrom.
REV 7
1/22/98
 Motorola, Inc. 1998
MOTOROLA
FAST SRAM
MCM69F819
1
FUNCTIONAL BLOCK DIAGRAM
LBO
ADV
K
ADSC
BURST
COUNTER
K2
2
18
256K x 18
ARRAY
CLR
ADSP
2
SA
SA1
SA0
ADDRESS
REGISTER
18
16
SGW
SW
SBa
18
18
WRITE
REGISTER
a
2
SBb
WRITE
REGISTER
b
DATA–IN
REGISTER
K
K2
SE1
SE2
SE3
G
MCM69F819
2
ENABLE
REGISTER
DQa – DQb
MOTOROLA FAST SRAM
1
2
3
4
5
6
7
VDDQ
SA
SA
ADSP
SA
SA
VDDQ
NC
SE2
SA
ADSC
SA
SE3
NC
NC
SA
SA
VDD
SA
SA
NC
DQb
NC
VSS
NC
VSS
DQa
NC
NC
DQb
VSS
SE1
VSS
NC
DQa
VDDQ
NC
VSS
G
VSS
DQa VDDQ
NC
DQb
SBb
ADV
VSS
NC
DQa
DQb
NC
VSS
SGW
VSS
DQa
NC
VDDQ VDD
NC
VDD
NC
VDD VDDQ
A
B
C
D
E
F
G
H
J
K
NC
DQb
VSS
K
VSS
NC
DQa
DQb
NC
VSS
NC
SBa
DQa
NC
VDDQ DQb
VSS
SW
VSS
NC
VDDQ
L
M
N
P
R
DQb
NC
VSS
SA1
VSS
DQa
NC
NC
DQb
VSS
SA0
VSS
NC
DQa
NC
SA
LBO
VDD
NC
SA
NC
NC
SA
SA
NC
SA
SA
NC
VDDQ
NC
NC
NC
NC
NC VDDQ
T
NC
NC
NC
VDDQ
VSS
NC
NC
DQb
DQb
VSS
VDDQ
DQb
DQb
NC
VDD
NC
VSS
DQb
DQb
VDDQ
VSS
DQb
DQb
DQb
NC
VSS
VDDQ
NC
NC
NC
100 99 98 97 9695 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
10
71
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 3738 39 40 41 42 43 44 4546 47 48 49 50
SA
NC
NC
VDDQ
VSS
NC
DQa
DQa
DQa
VSS
VDDQ
DQa
DQa
VSS
NC
VDD
NC
DQa
DQa
VDDQ
VSS
DQa
DQa
NC
NC
VSS
VDDQ
NC
NC
NC
LBO
SA
SA
SA
SA
SA1
SA0
NC
NC
VSS
VDD
NC
NC
SA
SA
SA
SA
SA
SA
SA
U
SA
SA
SE1
SE2
NC
NC
SBb
SBa
SE3
VDD
VSS
K
SGW
SW
G
ADSC
ADSP
ADV
SA
SA
PIN ASSIGNMENTS
TOP VIEW 119 BUMP PBGA
TOP VIEW 100 PIN TQFP
Not to Scale
MOTOROLA FAST SRAM
MCM69F819
3
PBGA PIN DESCRIPTIONS
Pin Locations
Symbol
Type
4B
ADSC
Input
Synchronous Address Status Controller: Active low, interrupts any
ongoing burst and latches a new external address. Used to initiate a
READ, WRITE, or chip deselect.
4A
ADSP
Input
Synchronous Address Status Processor: Active low, interrupts any
ongoing burst and latches a new external address. Used to initiate a
new READ, WRITE, or chip deselect (exception — chip deselect does
not occur when ADSP is asserted and SE1 is high).
4G
ADV
Input
Synchronous Address Advance: Increments address count in
accordance with counter type selected (linear/interleaved).
(a) 6D, 7E, 6F, 7G, 6H, 7K, 6L, 6N, 7P
(b) 1D, 2E, 2G, 1H, 2K, 1L, 2M, 1N, 2P
DQx
I/O
4F
G
Input
Asynchronous Output Enable Input:
Low — enables output buffers (DQx pins).
High — DQx pins are high impedance.
4K
K
Input
Clock: This signal registers the address, data in, and all control signals
except G and LBO.
3R
LBO
Input
Linear Burst Order Input: This pin must remain in steady state (this
signal not registered or latched). It must be tied high or low.
Low — linear burst counter (68K/PowerPC).
High — interleaved burst counter (486/i960/Pentium).
2A, 3A, 5A, 6A, 3B, 5B, 2C, 3C,
5C, 6C, 2R, 6R, 2T, 3T, 5T, 6T
SA
Input
Synchronous Address Inputs: These inputs are registered and must
meet setup and hold times.
4N, 4P
SA1, SA0
Input
Synchronous Address Inputs: These pins must be wired to the two
LSBs of the address bus for proper burst operation. These inputs are
registered and must meet setup and hold times.
5L, 3G
(a) (b)
SBx
Input
Synchronous Byte Write Inputs: “x” refers to the byte being written (byte
a, b). SGW overrides SBx.
4E
SE1
Input
Synchronous Chip Enable: Active low to enable chip.
Negated high — blocks ADSP or deselects chip when ADSC is
asserted.
2B
SE2
Input
Synchronous Chip Enable: Active high for depth expansion.
6B
SE3
Input
Synchronous Chip Enable: Active low for depth expansion.
4H
SGW
Input
Synchronous Global Write: This signal writes all bytes regardless of the
status of the SBx and SW signals. If only byte write signals SBx are
being used, tie this pin high.
4M
SW
Input
Synchronous Write: This signal writes only those bytes that have been
selected using the byte write SBx pins. If only byte write signals SBx
are being used, tie this pin low.
4C, 2J, 4J, 6J, 4R
VDD
Supply
Core Power Supply.
1A, 7A, 1F, 7F, 1J, 7J, 1M, 7M, 1U, 7U
VDDQ
Supply
I/O Power Supply.
3D, 5D, 3E, 5E, 3F, 5F, 5G, 3H, 5H,
3K, 5K, 3L, 3M, 5M, 3N, 5N, 3P, 5P
VSS
Supply
Ground.
1B, 7B, 1C, 7C, 2D, 4D, 7D, 1E, 6E,
2F, 1G, 6G, 2H, 7H, 3J, 5J, 1K, 6K,
2L, 4L, 7L, 6M, 2N, 7N, 1P, 6P, 1R,
5R, 7R, 1T, 4T, 7T, 2U, 3U, 4U, 5U, 6U
NC
—
MCM69F819
4
Description
Synchronous Data I/O: “x” refers to the byte being read or written
(byte a, b).
No Connection: There is no connection to the chip.
MOTOROLA FAST SRAM
TQFP PIN DESCRIPTIONS
Pin Locations
Symbol
Type
85
ADSC
Input
Synchronous Address Status Controller: Active low, interrupts any
ongoing burst and latches a new external address. Used to initiate a
READ, WRITE, or chip deselect.
84
ADSP
Input
Synchronous Address Status Processor: Active low, interrupts any
ongoing burst and latches a new external address. Used to initiate a
new READ, WRITE, or chip deselect (exception — chip deselect does
not occur when ADSP is asserted and SE1 is high).
83
ADV
Input
Synchronous Address Advance: Increments address count in
accordance with counter type selected (linear/interleaved).
(a) 58, 59, 62, 63, 68, 69, 72, 73, 74
(b) 8, 9, 12, 13, 18, 19, 22, 23, 24
DQx
I/O
86
G
Input
Asynchronous Output Enable Input:
Low — enables output buffers (DQx pins).
High — DQx pins are high impedance.
89
K
Input
Clock: This signal registers the address, data in, and all control signals
except G and LBO.
31
LBO
Input
Linear Burst Order Input: This pin must remain in steady state (this
signal not registered or latched). It must be tied high or low.
Low — linear burst counter (68K/PowerPC).
High — interleaved burst counter (486/i960/Pentium).
32, 33, 34, 35, 44, 45, 46, 47, 48, 49, 50,
80, 81, 82, 99, 100
SA
Input
Synchronous Address Inputs: These inputs are registered and must
meet setup and hold times.
36, 37
SA1, SA0
Input
Synchronous Address Inputs: These pins must be wired to the two
LSBs of the address bus for proper burst operation. These inputs are
registered and must meet setup and hold times.
93, 94
(a) (b)
SBx
Input
Synchronous Byte Write Inputs: “x” refers to the byte being written (byte
a, b). SGW overrides SBx.
88
SGW
Input
Synchronous Global Write: This signal writes all bytes regardless of the
status of the SBx and SW signals. If only byte write signals SBx are
being used, tie this pin high.
98
SE1
Input
Synchronous Chip Enable: Active low to enable chip.
Negated high — blocks ADSP or deselects chip when ADSC is
asserted.
97
SE2
Input
Synchronous Chip Enable: Active high for depth expansion.
92
SE3
Input
Synchronous Chip Enable: Active low for depth expansion.
87
SW
Input
Synchronous Write: This signal writes only those bytes that have been
selected using the byte write SBx pins. If only byte write signals SBx
are being used, tie this pin low.
15, 41, 65, 91
VDD
Supply
Core Power Supply.
4, 11, 20, 27, 54, 61, 70, 77
VDDQ
Supply
I/O Power Supply.
5, 10, 17, 21, 26, 40,
55, 60, 67, 71, 76, 90
VSS
Supply
Ground.
1, 2, 3, 6, 7, 14, 16, 25, 28, 29, 30, 38,
39, 42, 43, 51, 52, 53, 56, 57, 64, 66, 75,
78, 79, 95, 96
NC
—
MOTOROLA FAST SRAM
Description
Synchronous Data I/O: “x” refers to the byte being read or written
(byte a, b).
No Connection: There is no connection to the chip.
MCM69F819
5
TRUTH TABLE (See Notes 1 Through 5)
Address
Used
SE1
SE2
SE3
ADSP
ADSC
ADV
G3
DQx
Write 2, 4
Deselect
None
1
X
X
X
0
X
X
High–Z
X
Deselect
None
0
X
1
0
X
X
X
High–Z
X
Deselect
None
0
0
X
0
X
X
X
High–Z
X
Deselect
None
X
X
1
1
0
X
X
High–Z
X
Deselect
None
X
0
X
1
0
X
X
High–Z
Begin Read
External
0
1
0
0
X
X
0
High–Z
X
X5
Begin Read
External
0
1
0
1
0
X
0
High–Z
READ5
Continue Read
Next
X
X
X
1
1
0
1
High–Z
READ
Continue Read
Next
X
X
X
1
1
0
0
DQ
READ
Continue Read
Next
1
X
X
X
1
0
1
High–Z
READ
Continue Read
Next
1
X
X
X
1
0
0
DQ
READ
Suspend Read
Current
X
X
X
1
1
1
1
High–Z
READ
Suspend Read
Current
X
X
X
1
1
1
0
DQ
READ
Suspend Read
Current
1
X
X
X
1
1
1
High–Z
READ
Suspend Read
Current
1
X
X
X
1
1
0
DQ
READ
Begin Write
External
0
1
0
1
0
X
X
High–Z
WRITE
Continue Write
Next
X
X
X
1
1
0
X
High–Z
WRITE
Continue Write
Next
1
X
X
X
1
0
X
High–Z
WRITE
Suspend Write
Current
X
X
X
1
1
1
X
High–Z
WRITE
Suspend Write
Current
1
X
X
X
1
1
X
High–Z
WRITE
Next Cycle
NOTES:
1. X = Don’t Care. 1 = logic high. 0 = logic low.
2. Write is defined as either 1) any SBx and SW low or 2) SGW is low.
3. G is an asynchronous signal and is not sampled by the clock K. G drives the bus immediately (tGLQX) following G going low.
4. On write cycles that follow read cycles, G must be negated prior to the start of the write cycle to ensure proper write data setup times. G must
also remain negated at the completion of the write cycle to ensure proper write data hold times.
5. This read assumes the RAM was previously deselected.
LINEAR BURST ADDRESS TABLE (LBO = VSS)
1st Address (External)
2nd Address (Internal)
3rd Address (Internal)
4th Address (Internal)
X . . . X00
X . . . X01
X . . . X10
X . . . X11
X . . . X01
X . . . X10
X . . . X11
X . . . X00
X . . . X10
X . . . X11
X . . . X00
X . . . X01
X . . . X11
X . . . X00
X . . . X01
X . . . X10
4th Address (Internal)
INTERLEAVED BURST ADDRESS TABLE (LBO = VDD)
1st Address (External)
2nd Address (Internal)
3rd Address (Internal)
X . . . X00
X . . . X01
X . . . X10
X . . . X11
X . . . X01
X . . . X00
X . . . X11
X . . . X10
X . . . X10
X . . . X11
X . . . X00
X . . . X01
X . . . X11
X . . . X10
X . . . X01
X . . . X00
WRITE TRUTH TABLE
SGW
SW
SBa
SBb
Read
Cycle Type
H
H
X
X
Read
H
L
H
H
Write Byte a
H
L
L
H
Write Byte b
H
L
H
L
Write All Bytes
H
L
L
L
Write All Bytes
L
X
X
X
MCM69F819
6
MOTOROLA FAST SRAM
ABSOLUTE MAXIMUM RATINGS (See Note 1)
Rating
Symbol
Value
Unit
VDD
VSS – 0.5 to + 4.6
V
VDDQ
VSS – 0.5 to VDD
V
2
Vin, Vout
VSS – 0.5 to
VDD + 0.5
V
2
Input Voltage (Three–State I/O)
VIT
VSS – 0.5 to
VDDQ + 0.5
V
2
Output Current (per I/O)
Iout
± 20
mA
Package Power Dissipation
PD
1.6
W
Ambient Temperature
TA
0 to 70
°C
Power Supply Voltage
I/O Supply Voltage
Input Voltage Relative to VSS for
Any Pin Except VDD
Die Temperature
Temperature Under Bias
Storage Temperature
TJ
110
°C
Tbias
– 10 to 85
°C
Tstg
– 55 to 125
°C
Notes
This device contains circuitry to protect the
inputs against damage due to high static voltages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maximum rated voltages to this high–impedance
circuit.
3
3
NOTES:
1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPERATING CONDITIONS. Exposure to higher than recommended voltages for extended
periods of time could affect device reliability.
2. This is a steady–state DC parameter that is in effect after the power supply has
achieved its nominal operating level. Power sequencing is not necessary.
3. Power dissipation capability is dependent upon package characteristics and use
environment. See Package Thermal Characteristics.
PACKAGE THERMAL CHARACTERISTICS — PBGA
Rating
Symbol
Max
Unit
Notes
RθJA
38
22
°C/W
1, 2
Junction to Board (Bottom)
RθJB
14
°C/W
3
Junction to Case (Top)
RθJC
5
°C/W
4
Junction to Ambient (@ 200 lfm)
Single Layer Board
Four Layer Board
NOTES:
1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient
temperature, air flow, board population, and board thermal resistance.
2. Per SEMI G38–87.
3. Indicates the average thermal resistance between the die and the printed circuit board.
4. Indicates the average thermal resistance between the die and the case top surface via the cold plate method (MIL SPEC–883 Method 1012.1).
PACKAGE THERMAL CHARACTERISTICS — TQFP
Rating
Symbol
Max
Unit
Notes
RθJA
40
25
°C/W
1, 2
Junction to Board (Bottom)
RθJB
17
°C/W
3
Junction to Case (Top)
RθJC
9
°C/W
4
Junction to Ambient (@ 200 lfm)
Single Layer Board
Four Layer Board
NOTES:
1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient
temperature, air flow, board population, and board thermal resistance.
2. Per SEMI G38–87.
3. Indicates the average thermal resistance between the die and the printed circuit board.
4. Indicates the average thermal resistance between the die and the case top surface via the cold plate method (MIL SPEC–883 Method 1012.1).
MOTOROLA FAST SRAM
MCM69F819
7
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V + 10%, – 5%, TA = 0 to 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS: 2.5 V I/O Supply (Voltages Referenced to VSS = 0 V)
Symbol
Min
Typ
Max
Unit
VDD
3.135
3.3
3.6
V
I/O Supply Voltage
VDDQ
2.375
2.5
2.9
V
Input Low Voltage
VIL
– 0.3
—
0.7
V
Input High Voltage
VIH
1.7
—
VDD + 0.3
V
Input High Voltage (I/O Pins)
VIH2
1.7
—
VDDQ + 0.3
V
Parameter
Supply Voltage
RECOMMENDED OPERATING CONDITIONS: 3.3 V I/O Supply (Voltages Referenced to VSS = 0 V)
Parameter
Symbol
Min
Typ
Max
Unit
VDD
3.135
3.3
3.6
V
VDDQ
3.135
3.3
VDD
V
Input Low Voltage
VIL
– 0.5
—
0.8
V
Input High Voltage
VIH
2
—
VDD + 0.5
V
Input High Voltage (I/O Pins)
VIH2
2
—
VDDQ + 0.5
V
Supply Voltage
I/O Supply Voltage
VIH
VSS
VSS – 1.0 V
20% tKHKH (MIN)
Figure 1. Undershoot Voltage
MCM69F819
8
MOTOROLA FAST SRAM
DC CHARACTERISTICS AND SUPPLY CURRENTS
Parameter
Symbol
Min
Typ
Max
Unit
Ilkg(I)
—
—
±1
µA
Ilkg(O)
—
—
±1
µA
IDDA
—
—
350
325
300
250
mA
1, 2, 3
CMOS Standby Supply Current (Device Deselected, Freq = 0,
VDD = Max, All Inputs Static at CMOS Levels)
ISB2
—
—
45
mA
4, 5
TTL Standby Supply Current (Device Deselected, Freq = 0,
VDD = Max, All Inputs Static at TTL Levels)
ISB3
—
—
50
mA
4, 6
Clock Running (Device Deselected,
Freq = Max, VDD = Max,
All Inputs Toggling at CMOS Levels)
ISB4
—
—
190
175
165
145
mA
4, 5
Static Clock Running (Device Deselected, Freq = Max,
VDD = Max, All Inputs Static at TTL Levels)
ISB5
—
—
95
mA
4, 6
Output Low Voltage (IOL = 2 mA) VDDQ = 2.5 V
VOL
—
—
0.7
V
Output High Voltage (IOL = – 2 mA) VDDQ = 2.5 V
VOH
1.7
—
—
V
Output Low Voltage (IOL = 8 mA) VDDQ = 3.3 V
VOL2
—
—
0.4
V
Output High Voltage (IOL = – 4 mA) VDDQ = 3.3 V
VOH2
2.4
—
—
V
Input Leakage Current (0 V ≤ Vin ≤ VDD)
Output Leakage Current (0 V ≤ Vin ≤ VDDQ)
AC Supply Current (Device Selected,
All Outputs Open, Freq = Max)
Includes VDD Only
MCM69F819–7.5
MCM69F819–8
MCM69F819–8.5
MCM69F819–11
MCM69F819–7.5
MCM69F819–8
MCM69F819–8.5
MCM69F819–11
Notes
NOTES:
1. Reference AC Operating Conditions and Characteristics for input and timing.
2. All addresses transition simultaneously low (LSB) then high (MSB).
3. Data states are all zero.
4. Device is deselected as defined by the Truth Table.
5. CMOS levels for I/O’s are VIT ≤ VSS + 0.2 V or ≥ VDDQ – 0.2 V. CMOS levels for other inputs are Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V.
6. TTL levels for I/O’s are VIT ≤ VIL or ≥ VIH2. TTL levels for other inputs are Vin ≤ VIL or ≥ VIH.
CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, TA = 0 to 70°C, Periodically Sampled Rather Than 100% Tested)
Symbol
Min
Typ
Max
Unit
Input Capacitance
Cin
—
4
5
pF
Input/Output Capacitance
CI/O
—
7
8
pF
Parameter
MOTOROLA FAST SRAM
MCM69F819
9
AC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V + 10%, – 5%, TA = 0 to 70°C, Unless Otherwise Noted)
Input Timing Measurement Reference Level . . . . . . . . . . . . . . 1.25 V
Input Pulse Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 2.5 V
Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . 1.0 V/ns (20 to 80%)
Output Timing Reference Level . . . . . . . . . . . . . . . . . . . . . . . . . 1.25 V
Output Load . . . . . . . . . . . . . . See Figure 2 Unless Otherwise Noted
READ/WRITE CYCLE TIMING (See Notes 1 and 2)
MCM69F819–7.5
117 MHz
Parameter
P
MCM69F819–8
100 MHz
MCM69F819–8.5
90 MHz
MCM69F819–11
50 MHz
Symbol
S b l
Min
Max
Min
Max
Min
Max
Min
Max
Unit
U i
Notes
N
Cycle Time
tKHKH
8.5
—
10
—
11
—
20
—
ns
Clock High Pulse Width
tKHKL
3
—
4
—
4.5
—
4.5
—
ns
Clock Low Pulse Width
tKLKH
3
—
4
—
4.5
—
4.5
—
ns
Clock Access Time
tKHQV
—
7.5
—
8
—
8.5
—
11
ns
Output Enable to Output
Valid
tGLQV
—
3.5
—
3.5
—
3.5
—
3.5
ns
Clock High to Output Active
tKHQX1
0
—
0
—
0
—
0
—
ns
3, 4, 5
Clock High to Output
Change
tKHQX2
2
—
2
—
2
—
2
—
ns
3, 4
Output Enable to Output
Active
tGLQX
0
—
0
—
0
—
0
—
ns
3, 4
Output Disable to Q High–Z
tGHQZ
—
3.5
—
3.5
—
3.5
—
3.5
ns
3, 4
Clock High to Q High–Z
tKHQZ
2
3.5
2
3.5
2
3.5
2
3.5
ns
3, 4, 5
Setup Times:
Address
ADSP, ADSC, ADV
Data In
Write
Chip Enable
tADKH
tADSKH
tDVKH
tWVKH
tEVKH
1.5
—
2
—
2
—
2
—
ns
Hold Times:
Address
ADSP, ADSC, ADV
Data In
Write
Chip Enable
tKHAX
tKHADSX
tKHDX
tKHWX
tKHEX
0.5
—
0.5
—
0.5
—
0.5
—
ns
NOTES:
1. Write is defined as either any SBx and SW low or SGW is low. Chip Enable is defined as SE1 low, SE2 high, and SE3 low whenever ADSP
or ADSC is asserted.
2. All read and write cycle timings are referenced from K or G.
3. Measured at ± 200 mV from steady state.
4. This parameter is sampled and not 100% tested.
5. At any given voltage and temperature, tKHQZ max is less than tKHQX1 min for a given device and from device to device.
OUTPUT
Z0 = 50 Ω
RL = 50 Ω
1.25 V
Figure 2. AC Test Load
MCM69F819
10
MOTOROLA FAST SRAM
CLOCK ACCESS TIME DELAY (ns)
5
OUTPUT
CL
4
3
2
1
0
0
20
40
60
80
100
LUMPED CAPACITANCE, CL (pF)
Figure 3. Lumped Capacitive Load and Typical Derating Curve
OUTPUT LOAD
OUTPUT
BUFFER
TEST POINT
UNLOADED RISE AND FALL TIME MEASUREMENT
INPUT
WAVEFORM
OUTPUT
WAVEFORM
2.0
2.0
0.5
0.5
2.0
2.0
0.5
tr
0.5
tf
NOTES:
1. Input waveform has a slew rate of 1 V/ns.
2. Rise time is measured from 0.5 to 2.0 V unloaded.
3. Fall time is measured from 2.0 to 0.5 V unloaded.
Figure 4. Unloaded Rise and Fall Time Characterization
MOTOROLA FAST SRAM
MCM69F819
11
2.9
2.5
PULL–UP
I (mA) MIN
I (mA) MAX
– 0.5
– 38
– 105
0
– 38
– 105
0.8
– 38
– 105
1.25
– 26
– 83
1.5
– 20
– 70
2.3
0
– 30
2.7
0
– 10
2.9
0
0
2.3
2.1
VOLTAGE (V)
VOLTAGE (V)
1.25
0.8
0
0
– 38
CURRENT (mA)
– 105
– 80
– 40
CURRENT (mA)
– 120
(a) Pull–Up for 2.5 V I/O Supply
3.6
3.135
2.8
PULL–UP
I (mA) MIN
I (mA) MAX
– 0.5
– 50
– 150
0
– 50
– 150
1.4
– 50
– 150
1.65
– 46
– 130
2.0
– 35
– 101
3.135
0
– 25
3.6
0
0
VOLTAGE (V)
VOLTAGE (V)
1.65
1.4
0
0
(b) Pull–Up for 3.3 V I/O Supply
VDD
PULL–DOWN
I (mA) MIN
I (mA) MAX
– 0.5
0
0
0
0
0
0.4
10
20
0.8
20
40
1.25
31
63
1.6
40
80
2.8
40
80
3.2
40
80
3.4
40
80
1.6
VOLTAGE (V)
VOLTAGE (V)
1.25
0.3
0
0
40
CURRENT (mA)
80
(c) Pull–Down
Figure 5. Typical Output Buffer Characteristics
MCM69F819
12
MOTOROLA FAST SRAM
MOTOROLA FAST SRAM
MCM69F819
13
Q(n)
A
SINGLE READ
tKHQX1
Q(A)
tKHQV
B
tKHKL
NOTE: E low = SE2 high and SE3 low.
W low = SGW low and/or SW and SBx low.
DESELECTED
tKHQZ
DQx
G
W
E
SE1
ADV
ADSC
ADSP
SA
K
tKHKH
tKHQX2
Q(B)
Q(B+2)
BURST READ
Q(B+1)
tGHQZ
Q(B+3)
BURST WRAPS AROUND
tKLKH
Q(B)
ADSP, SA
SE2, SE3
IGNORED
READ/WRITE CYCLES
D(C)
C
D(C+2)
BURST WRITE
D(C+1)
D(C+3)
SINGLE READ
tGLQX
tGLQV
D
Q(D)
APPLICATION INFORMATION
STOP CLOCK OPERATION
In the stop clock mode of operation, the SRAM will hold all
state and data values even though the clock is not running
(full static operation). The SRAM design allows the clock to
start with ADSP and ADSC, and stops the clock after the last
write data is latched, or the last read data is driven out.
When starting and stopping the clock, the AC clock timing
and parametrics must be strictly maintained. For example,
clock pulse width and edge rates must be guaranteed when
starting and stopping the clocks.To achieve the lowest power
operation for all three stop clock modes, stop read, stop
write, and stop deselect:
To achieve the lowest power operation for all three stop
clock modes, stop read, stop write, and stop deselect:
• Force the clock to a low state.
• Force the control signals to an inactive state (this
guarantees any potential source of noise on the clock
input will not start an unplanned on activity).
• Force the address inputs to a low state (VIL), preferably
< 0.2 V.
STOP CLOCK WITH READ TIMING
K
ADSP
ADDRESS
A1
A2
ADV
DQx
Q(A1)
ADSP
(INITIATES
BURST READ)
CLOCK STOP
(CONTINUE
BURST READ)
Q(A1 + 1)
Q(A2)
WAKE UP ADSP
(INITIATES BURST READ)
NOTE: For lowest possible power consumption during stop clock, the addresses should be driven to a low state (VIL).
Best results are obtained if VIL < 0.2 V.
MCM69F819
14
MOTOROLA FAST SRAM
STOP CLOCK WITH WRITE TIMING
K
ADSC
ADDRESS
A1
A2
WRITE
ADV
DATA IN
D(A1)
D(A1 + 1)
VIH OR VIL FIXED (SEE NOTE)
D(A2)
HIGH–Z
DQx
ADSC
(INITIATES
BURST WRITE)
CLOCK STOP
(CONTINUE
BURST WRITE)
WAKE UP ADSC
(INITIATES BURST WRITE)
NOTE: While the clock is stopped, DATA IN must be fixed in a high (VIH) or low (VIL) state to reduce the DC current of the
input buffers. For lowest power operation, all data and address lines should be held in a low (VIL) state and control
lines held in an inactive state.
MOTOROLA FAST SRAM
MCM69F819
15
STOP CLOCK WITH DESELECT OPERATION TIMING
K
ADSC
SE1
DATA IN
VIH OR VIL FIXED (SEE NOTE)
HIGH–Z
DQx
DATA
CONTINUE
BURST READ
DATA
CLOCK STOP
(DESELECTED)
WAKE UP
(DESELECTED)
NOTE: While the clock is stopped, DATA IN must be fixed in a high (VIH) or low (VIL) state to reduce the DC current of the
input buffers. For lowest power operation, all data and address lines should be held in a low (VIL) state and control
lines held in an inactive state.
MCM69F819
16
MOTOROLA FAST SRAM
NON–BURST SYNCHRONOUS OPERATION
Although this BurstRAM has been designed for PowerPC–
based and other high end MPU–based systems, these
SRAMs can be used in other high speed L2 cache or
memory applications that do not require the burst address
feature. Most L2 caches designed with a synchronous interface can make use of the MCM69F819. The burst counter
feature of the BurstRAM can be disabled, and the SRAM can
be configured to act upon a continuous stream of addresses.
See Figure 6.
CONTROL PIN TIE VALUES EXAMPLE (H ≥ VIH, L ≤ VIL)
Non–Burst
ADSP
ADSC
ADV
SE1
SE2
LBO
Sync Non–Burst,
Flow–Through
SRAM
H
L
H
L
H
X
NOTE: Although X is specified in the table as a don’t care, the pin
must be tied either high or low.
K
ADDR
A
B
C
D
E
F
G
D(E)
D(F)
D(G)
H
SE3
W
G
DQ
Q(A)
Q(B)
Q(C)
Q(D)
READS
D(H)
WRITES
Figure 6. Example Configuration as Non–Burst Synchronous SRAM
ORDERING INFORMATION
(Order by Full Part Number)
MCM
69F819
XX
X
X
Motorola Memory Prefix
Blank = Trays, R = Tape and Reel
Part Number
Speed (7.5 = 7.5 ns, 8 = 8 ns,
8.5 = 8.5 ns, 11 = 11 ns)
Package (ZP = PBGA, TQ = TQFP)
Full Part Numbers — MCM69F819ZP7.5
MCM69F819ZP7.5R
MCM69F819TQ7.5
MCM69F819TQ7.5R
MOTOROLA FAST SRAM
MCM69F819ZP8
MCM69F819ZP8R
MCM69F819TQ8
MCM69F819TQ8R
MCM69F819ZP8.5
MCM69F819ZP8.5R
MCM69F819TQ8.5
MCM69F819TQ8.5R
MCM69F819ZP11
MCM69F819ZP11R
MCM69F819TQ11
MCM69F819TQ11R
MCM69F819
17
PACKAGE DIMENSIONS
ZP PACKAGE
7 x 17 BUMP PBGA
CASE 999–02
0.20
4X
119X
E
C
B
D
E2
e
6X
M
A B C
A
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
D1
16X
M
0.15
7 6 5 4 3 2 1
D2
b
0.3
DIM
A
A1
A2
A3
D
D1
D2
E
E1
E2
b
e
e
E1
TOP VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. ALL DIMENSIONS IN MILLIMETERS.
3. DIMENSION b IS THE MAXIMUM SOLDER BALL
DIAMETER MEASURED PARALLEL TO DATUM A.
4. DATUM A, THE SEATING PLANE, IS DEFINED BY
THE SPHERICAL CROWNS OF THE SOLDER
BALLS.
BOTTOM VIEW
MILLIMETERS
MIN
MAX
–––
2.40
0.50
0.70
1.30
1.70
0.80
1.00
22.00 BSC
20.32 BSC
19.40
19.60
14.00 BSC
7.62 BSC
11.90
12.10
0.60
0.90
1.27 BSC
0.25 A
A3
0.35 A
0.20 A
A
A1
MCM69F819
18
A2
SIDE VIEW
SEATING
PLANE
A
MOTOROLA FAST SRAM
TQ PACKAGE
TQFP
CASE 983A–01
4X
e
0.20 (0.008) H A–B D
2X 30 TIPS
e/2
0.20 (0.008) C A–B D
–D–
80
51
50
81
B
E/2
–A–
–X–
B
X=A, B, OR D
–B–
VIEW Y
E1 E
BASE
METAL
PLATING
E1/2
31
100
c
1
30
D1/2
ÉÉÉÉ
ÇÇÇÇ
ÇÇÇÇ
ÉÉÉÉ
b1
D/2
b
D1
D
0.13 (0.005)
M
C A–B
S
D
S
SECTION B–B
2X 20 TIPS
0.20 (0.008) C A–B D
A
q
2
0.10 (0.004) C
–H–
–C–
SEATING
PLANE
q
3
VIEW AB
0.05 (0.002)
c1
S
S
q
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DATUM PLANE –H– IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE BOTTOM OF THE PARTING LINE.
4. DATUMS –A–, –B– AND –D– TO BE DETERMINED
AT DATUM PLANE –H–.
5. DIMENSIONS D AND E TO BE DETERMINED AT
SEATING PLANE –C–.
6. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS 0.25
(0.010) PER SIDE. DIMENSIONS D1 AND B1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE –H–.
7. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. DAMBAR PROTRUSION SHALL
NOT CAUSE THE b DIMENSION TO EXCEED 0.45
(0.018).
0.25 (0.010)
R2
A2
A1
R1
L2
L
L1
VIEW AB
GAGE PLANE
q
DIM
A
A1
A2
b
b1
c
c1
D
D1
E
E1
e
L
L1
L2
S
R1
R2
q
1
2
q3
q
q
MOTOROLA FAST SRAM
MILLIMETERS
MIN
MAX
–––
1.60
0.05
0.15
1.35
1.45
0.22
0.38
0.22
0.33
0.09
0.20
0.09
0.16
22.00 BSC
20.00 BSC
16.00 BSC
14.00 BSC
0.65 BSC
0.45
0.75
1.00 REF
0.50 REF
0.20
–––
0.08
–––
0.08
0.20
0_
7_
0_
–––
11 _
13 _
11 _
13 _
INCHES
MIN
MAX
–––
0.063
0.002
0.006
0.053
0.057
0.009
0.015
0.009
0.013
0.004
0.008
0.004
0.006
0.866 BSC
0.787 BSC
0.630 BSC
0.551 BSC
0.026 BSC
0.018
0.030
0.039 REF
0.020 REF
0.008
–––
0.003
–––
0.003
0.008
0_
7_
0_
–––
11 _
13 _
11 _
13 _
MCM69F819
19
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
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MCM69F819
20
◊
MCM69F819/D
MOTOROLA FAST
SRAM