MOTOROLA MRF166C Mosfet broadband rf power fet Datasheet

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by MRF166/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement Mode MOSFETs
Designed primarily for wideband large–signal output and driver from 30 – 500
MHz.
• Low Crss — 4.5 pF @ VDS = 28 V
20 W, 500 MHz
MOSFET
BROADBAND
RF POWER FETs
• MRF166C — Typical Performance at 400 MHz, 28 Vdc
Output Power = 20 W
Gain = 17 dB
Efficiency = 55%
• Optional 4–Lead Flange Package (MRF166)
• Replacement for Industry Standards such as MRF136, DV2820, BLF244,
SD1902, and ST1001
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• Excellent Thermal Stability, Ideally Suited for Class A Operation
• Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
CASE 211–07, STYLE 2
D
G
S
CASE 319–07, STYLE 3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Gate Voltage
VDSS
65
Vdc
Drain–Gate Voltage
(RGS = 1.0 MΩ)
VDGR
65
Vdc
VGS
± 40
Adc
Drain Current — Continuous
ID
4.0
Adc
Total Device Dissipation @ TC = 25°C
Derate Above 25°C
PD
70
0.4
Watts
W/°C
Storage Temperature Range
Tstg
– 65 to 150
°C
TJ
200
°C
Symbol
Max
Unit
RθJC
2.5
°C/W
Gate–Source Voltage
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
RF DEVICE DATA
MOTOROLA
Motorola, Inc. 1994
MRF166 MRF166C
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain–Source Breakdown Voltage
(VGS = 0 V, ID = 5.0 mA)
V(BR)DSS
65
—
—
V
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0 V)
IDSS
—
—
1.0
mA
Gate–Source Leakage Current
(VGS = 40 V, VDS = 0 V)
IGSS
—
—
1.0
µA
Gate Threshold Voltage
(VDS = 10 V, ID = 25 mA)
VGS(th)
1.0
3.0
6.0
V
Forward Transconductance
(VDS = 10 V, ID = 1.5 A)
gfs
600
800
—
mhos
Input Capacitance
(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)
Ciss
—
30
—
pF
Output Capacitance
(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)
Coss
—
35
—
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)
Crss
—
4.5
—
pF
NF
—
2.5
—
dB
Common Source Power Gain
(VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA)
Gps
14
17
—
dB
Drain Efficiency
(VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA)
η
50
55
—
%
Electrical Ruggedness
(VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA,
Load VSWR 30:1 at All Phase Angles)
ψ
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VDD = 28 V, f = 30 MHz, IDQ = 50 mA)
MRF166C
No Degradation in Output Power
MRF166
Common Source Power Gain
(VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA)
Gps
15
19
—
dB
Drain Efficiency
(VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA)
η
55
65
—
%
Electrical Ruggedness
(VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA,
Load VSWR 30:1 at All Phase Angles)
ψ
Series Equivalent Input Impedance
(VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA)
Zin
—
3.99 – j12.2
—
Ohms
Series Equivalent Output Impedance
(VDD = 28 V, Pout = 20 W, f = 150 MHz, IDQ = 25 mA)
Zout
—
14.15 – j6.51
—
Ohms
MRF166 MRF166C
2
No Degradation in Output Power
MOTOROLA RF DEVICE DATA
R3
C4
C13
+
VDD = 28 V
C11
+
+
C8
D1
–
RFC1
C10
R2
–
Vdc
C12
–
RFC2
R4
C9
Z5
Z6
Z7
RF OUTPUT
R1
C7
RF INPUT
Z1
Z2
L1
Z3
L2
C5
Z4
C1
D.U.T.
C3
C2
C1, C7 — 270 pF Chip Capacitor
C2, C6 — Johanson Trimmer Capacitor, 2 – 20 pF
C3 — 21 pF Mini Unelco
C4, C8, C9 — 0.01 µF
C5 — 18 pF Mini Unelco
C10, C11 — 680 pF Feed Through
C12, C13 — 50 µF, 50 V
D1 — 1N5925A Motorola Zener
Board Material — Teflon fiberglass
2 oz. Copper clad both sides, εr = 2.55
0.060″ Dielectric Thickness
C6
L1 — #18 AWG, 2 Turns, 0.25″ ID
0.15″ Wide
L2 — #18 AWG Hairpin 0.7″ long, bend into hairpin
RFC1 — Ferroxcube VK200–19/4B
RFC2 — 18 Turns #18 AWG Enameled, 0.3″ ID
R1 — 220 Ω 1/2 Watt
R2 — 1.8 kΩ 1/4 Watt
R3 — 10 kΩ, 10 Turns Bourns
R4 — 10 k 1/4 Watt
Z1 — Microstrip Line 0.150″ wide, 0.420″ long
Z2 — Microstrip Line 0.150″ wide, 0.350″ long
Z3 — Microstrip Line 0.150″ wide, 0.350″ long
Z4 — Microstrip Line 0.150″ wide, 0.450″ long
Z5 — Microstrip Line 0.150″ wide, 1.1″ long
Z6 — Microstrip Line 0.150″ wide, 0.650″ long
Z7 — Microstrip Line 0.150″ wide, 0.200″ long
Figure 1. MRF166C 400 MHz Test Circuit
R1
C7
RFC1
C10
R2
+
C8
C12
C9
D1
–
VDD = 28 V
C11
+
–
+
C13
Vdc
–
RFC2
R4
C6
L2
RF OUTPUT
L3
R3
C5
RF INPUT
L1
C3
C1
C4
D.U.T.
C2
C1, C2 — 406 ARCO
C3 — 39 pF ATC 100 Mil Chip Cap
C4 — 403 ARCO
C5 — 470 pF ATC 100 Mil Chip Cap
C6, C7, C9, C13 — 0.01 µF
C8, C12 — 50 µF, 50 V
C10, C11 — 680 pF Feed Through
D1 — 1N5925A Motorola Zener
L1 — #20 AWG 2 Turns, 0.235″ ID, 0.10″ OD
L2 — #18 AWG 2 Turns, 0.225″ ID, 0.22″ OD
L3 — #18 AWG 2 Turns, 0.325″ ID, 0.13″ OD
RFC1 — Ferroxcube VK200–19/4B
RFC2 — 18 Turns #18 AWG Enameled, 0.3″ ID
R1 — 10 kΩ, 10 Turn Bourns
R2 — 1.8 kΩ 1/4 Watt
R3 — 120 Ω 1/2 Watt
R4 — 10 kΩ 1/4 Watt
Board Material — 0.062″ G10, 2 oz Cu Clad Double Sided
Figure 2. MRF166 150 MHz Test Circuit
MOTOROLA RF DEVICE DATA
MRF166 MRF166C
3
TYPICAL CHARACTERISTICS
10
50
Coss
20
Ciss
I D, DRAIN CURRENT (AMPS)
C, CAPACITANCE (pF)
100
10
Crss
5
VGS = 0 V
f = 1 MHz
2
1
0
5
10
15
20
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
TC = 25°C
1
0.1
25
0
10
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain–Source Voltage
100
Figure 4. DC Safe Operating Area
MRF166
32
f = 150 MHz
30
Po, OUTPUT POWER (WATTS)
Po, OUTPUT POWER (WATTS)
35
25
20
15
VDS = 28 V
IDQ = 25 mA
10
5
0
f = 150 MHz
IDQ = 25 mA
28
Pin = 0.6 W
24
0.3 W
20
16
12
0.1 W
8
4
0
0.1
0.2
0.3
0.4
0.5
0.6
Pin, INPUT POWER (WATTS)
0.7
Figure 5. Output Power versus Input Power
0.8
0
12
14
16
18
20
22
24
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
26
28
Figure 6. Output Power versus Voltage
Po, OUTPUT POWER (WATTS)
16
14
f = 150 MHz
12
10
8
6
4
VDS = 13.5 V
IDQ = 25 mA
2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
Pin, INPUT POWER (WATTS)
0.7
0.8
Figure 7. Output Power versus Input Power
MRF166 MRF166C
4
MOTOROLA RF DEVICE DATA
35
16
30
14
Po, OUTPUT POWER (WATTS)
Po, OUTPUT POWER (WATTS)
MRF166C
f = 400 MHz
25
20
500 MHz
15
VDS = 28 V
IDQ = 100 mA
10
5
0
12
10
f = 400 MHz
8
6
4
VDS = 13.5 V
IDQ = 100 mA
2
0
0.1
0.2
0.3
0.4
0.5
0.6
Pin, INPUT POWER (WATTS)
0.8
0.7
Figure 8. Output Power versus Input Power
0
0
0.1
0.2
0.3
0.4
0.5
0.6
Pin, INPUT POWER (WATTS)
0.7
0.8
Figure 9. Output Power versus Input Power
32
f = 400 MHz
IDQ = 100 mA
Po, OUTPUT POWER (WATTS)
28
Pin = 0.8 W
24
20
0.4 W
16
12
0.2 W
8
4
0
12
14
16
18
20
22
24
VDS, DRAIN–SOURCE (VOLTS)
26
28
Figure 10. Output Power versus Voltage
400
f = 500 MHz
f = 500 MHz
400
200
ZOL*
200
Zin
100
100
Zo = 50 Ω
VDD = 28 V, IDQ = 100 mA
f
MHz
Zin
OHMS
100
200
400
500
11.0 – j21.0
4.20 – j12.6
1.90 – j5.80
1.50 – j4.10
ZOL*
OHMS
(Pout = 20 W)
8.50 – j10.0
6.00 – j9.00
4.50 – j6.70
4.20 – j5.40
ZOL* = Conjugate of the optimum load
impedance into which the device output
operates at a given output power, voltage and
frequency.
Figure 11. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF166 MRF166C
5
MRF166 MRF166C
6
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
A
U
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
M
Q
M
1
DIM
A
B
C
D
E
H
J
K
M
Q
R
S
U
4
B
R
2
S
3
D
K
STYLE 2:
PIN 1.
2.
3.
4.
J
C
H
E
INCHES
MIN
MAX
0.960
0.990
0.370
0.390
0.229
0.281
0.215
0.235
0.085
0.105
0.150
0.108
0.004
0.006
0.395
0.405
40 _
50 _
0.113
0.130
0.245
0.255
0.790
0.810
0.720
0.730
MILLIMETERS
MIN
MAX
24.39
25.14
9.40
9.90
5.82
7.13
5.47
5.96
2.16
2.66
3.81
4.57
0.11
0.15
10.04
10.28
40 _
50 _
2.88
3.30
6.23
6.47
20.07
20.57
18.29
18.54
SOURCE
GATE
SOURCE
DRAIN
SEATING
PLANE
CASE 211–07
ISSUE N
Q 2 PL
-AL
IDENTIFICATION
NOTCH
6
5
0.15 (0.006)
M
T A
M
N
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
-N1
2
3
K
F
D 2 PL
0.38 (0.015) M
B
0.38 (0.015)
T A
M
N
M
T A
M
M
N
M
DIM
A
B
C
D
E
F
H
J
K
L
N
Q
INCHES
MIN
MAX
0.965 0.985
0.355 0.375
0.230 0.260
0.115 0.125
0.102 0.114
0.075 0.085
0.160 0.170
0.004 0.006
0.090 0.110
0.725 BSC
0.225 0.241
0.125 0.135
MILLIMETER
MIN
MAX
24.52 25.01
9.02
9.52
5.85
6.60
2.93
3.17
2.59
2.90
1.91
2.15
4.07
4.31
0.11
0.15
2.29
2.79
18.42 BSC
5.72
6.12
3.18
3.42
J
H
C
E
-T-
SEATING
PLANE
STYLE 3:
PIN 1.
2.
3.
4.
5.
6.
SOURCE (COMMON)
GATE (INPUT)
SOURCE (COMMON)
SOURCE (COMMON)
DRAIN (OUTPUT)
SOURCE (COMMON)
CASE 319–07
ISSUE M
MOTOROLA RF DEVICE DATA
MRF166 MRF166C
7
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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MRF166 MRF166C
8
◊
*MRF166/D*
MRF166/D
MOTOROLA RF DEVICE
DATA
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